The Two-Step Rapid Thermal Annealing Effect of the Prepatterned A-SI Films

1998 ◽  
Vol 525 ◽  
Author(s):  
Kee-Chan Park ◽  
Kwon-Young Choi ◽  
Min-Cheol Lee ◽  
Min-Koo Han ◽  
Chan-Eui Yoon
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Glass Substrate ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Heat Propagation ◽  
Halogen Lamp ◽  
Si Films ◽  
Hydrogenated Amorphous ◽  
Temperature Crystallization

ABSTRACTHydrogenated amorphous silicon (a-Si:H) films which were deposited by plasma enhanced chemical vapor deposition (PECVD) have been recrystallized by the two-step rapid thermal annealing (RTA) employing the halogen lamp. The a-Si:H films evolve hydrogen explosively during the high temperature crystallization step. In result, the recrystallized polycrystalline silicon (poly-Si) films have poor surface morphology. In order to avoid the hydrogen evolution, the films have undergone the dehydrogenation step prior to the crystallization step.Before the RTA process, the active area of thin film transistors (TFT's) was patterned. The prepatterning of the a-Si:H active islands may reduce the thermal damage to the glass substrate during the recrystallization. The computer generated simulation shows the heat propagation from the a-Si:H islands into the glass substrate. We have fabricated the poly-Si TFT's on silicon wafers. The maximum ON/OFF current ratio of the devices was over 10.

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method

2010 ◽  
Vol 428-429 ◽  
pp. 444-446 ◽  
Author(s):  
Rui Min Jin ◽  
Ding Zhen Li ◽  
Lan Li Chen ◽  
Xin Feng Guo ◽  
Jing Xiao Lu
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Raman Spectra ◽  
Rapid Thermal Annealing ◽  
Glass Substrate ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Method ◽  
Hydrogenated Amorphous ◽  
Electronic Microscope

Amorphous silicon films prepared by PECVD on silex glass substrate has been crystallized by rapid thermal annealing (RTA), From the Raman spectra and scanning electronic microscope (SEM), it was found that the Raman spectra wa best crystallized at 950°C for 5 min. The thin film made by RTA was smoothly and perfect structure.

Effect of Rapid Thermal Annealing Condition on the Structure and Conductivity Properties of Polycrystalline Silicon Films on Glass

2011 ◽  
Vol 687 ◽  
pp. 634-640 ◽  
Author(s):  
Wei Yan Wang ◽  
Jin Hua Huang ◽  
Xian Peng Zhang ◽  
Wei Jie Song ◽  
Rui Qin Tan
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
X Ray Diffraction ◽  
Carrier Scattering ◽  
Uv Reflectance ◽  
Amorphous Si ◽  
Si Films ◽  
Polycrystalline Silicon Films ◽  
Reflectance Measurements

The effect of rapid thermal annealing (RTA) temperature (700~1200 °C) and time (1~8 min) on the structure and conductivity properties of polycrystalline silicon (Si) films on glass, grown by RTA crystallization of magnetron sputtering (MS) deposited amorphous Si (a-Si) films, was investigated by means of X-ray diffraction (XRD) and UV reflectance. It was observed the critical temperature for crystallizing a-Si films was ~750 °C and ~700 °C based on XRD and reflectance measurements, respectively. As soon as RTA temperature reached and exceeded the critical value, the structural property of polycrystalline Si films increased with RTA temperature or time. The above results were related to the thermal and photon effects induced by RTA. Moreover, it was revealed that the resistivity of polycrystalline Si films decreased with RTA temperature, however, even the resistivity of the polycrystalline Si films annealed at 1200 °C was 2 orders of magnitude higher than that of Si target, attributed to the carrier scattering by grain boundaries or defects. The polycrystalline Si films on glass fabricated by MS deposition combined with RTA crystallization may endow them with great application potentials in Si thin-film solar cells.

Research on Quantum State in Fabricating Poly-Si Films

2010 ◽  
Vol 428-429 ◽  
pp. 540-543
Author(s):  
Rui Min Jin ◽  
Lan Li Chen ◽  
Peng Hui Luo ◽  
Xin Feng Guo ◽  
Jing Xiao Lu
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Quantum State ◽  
Rapid Thermal Annealing ◽  
Glass Substrate ◽  
Quantum States ◽  
Silicon Films ◽  
Si Films ◽  
Electronic Microscope

Amorphous silicon films prepared by PECVD on glass substrate have been crystallized by rapid thermal annealing (RTA). By means of micro-Raman scattering and scanning electronic microscope (SEM), the quantum states in these processions are found and discussed.

A Novel Method for Fabrication of Hyhdrogenated Amorphous Silicon and High Quality Poly-SI Films on the Same Substrate by Employing Excimer Laser

1997 ◽  
Vol 467 ◽  
Author(s):  
Kwon-Young Choi ◽  
Jong-Wook Lee ◽  
Hyoung-Bae Choi ◽  
Jae-Hong Jeon ◽  
Min-Koo Han ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Excimer Laser ◽  
Rapid Thermal Annealing ◽  
Hydrogen Content ◽  
Glass Substrate ◽  
Laser Annealing ◽  
High Mobility ◽  
Halogen Lamp ◽  
Physical Damage ◽  
Excimer Laser Annealing

ABSTRACTWe have fabricated the a-Si:H film for pixel region and poly-Si film for driver region on the same glass substrate by a rapid thermal process successfully. By employing the halogen lamp, the considerable amount of hydrogen in the PECVD a-Si:H film, which causes the undesirable film ablation due to hydrogen evolution during excimer laser annealing, could be reduced selectively in the peripheral driver area where the a-Si:H film is recrystallized into poly-Si film in order to obtain the high mobility. After rapid thermal annealing, the hydrogen content in a-Si:H films, of which the inherent hydrogen content was found to be about 10–12 at. %, is successfully reduced to less than 5 at. %. The annealing conditions for dehydrogenation are 500, 550, 600 and 650 °C with various halogen lamp irradiation period which are below the point of the glass shrinkage. It should be noted that after rapid thermal annealing, any physical damage in the glass substrate has not been observed.

Polycrystalline Silicon Emitter Contacts Formed by Rapid Thermal Annealing

1989 ◽  
Vol 136 (1) ◽  
pp. 215-224 ◽  
Author(s):  
M. Delfino ◽  
J. G. de Groot ◽  
K. N. Ritz ◽  
P. Maillot
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon
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