Large Scale Synthesis of Silicon Nanowires by Laser Ablation

1998 ◽  
Vol 526 ◽  
Author(s):  
Y.H. Tang ◽  
Y.F. Zhang ◽  
C.S. Lee ◽  
N. Wang ◽  
D.P. Yu ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Large Scale ◽  
High Growth ◽  
High Growth Rate ◽  
Laser Source ◽  
Si Nanowires ◽  
Laser Ablation Method ◽  
Large Scale Synthesis ◽  
Krf Excimer Laser

AbstractQuasi one-dimensional materials have attracted considerable attention in recent years because of its potential to both fundamental physics and nanoelectronic applications. More recently, we have achieved large scale synthesis of silicon nanowires (SINW) at a high growth rate by laser ablation of Si target at 1200 °C. The laser source was a pulsed KrF excimer laser and the Si targets were made by pressing Si powder of 5 microns in size. 50 sccm Ar was used as a carrying gas flowing from the side near the Si target towards a water-cooled copper finger. Si nanowires have been grown with diameters ranging from 3 to 43 nm and several hundreds microns in length after 2 hours of laser ablation of Si target. The SLNWs were analyzed by XRD, Raman, EDS, TEM and HRTEM. Successful large scale synthesis of SINW by laser ablation extends the pulsed laser ablation method from depositing thin films to synthesis of nanowires.

scholarly journals Krypton Gas for High Quality Single Wall Carbon Nanotubes Synthesis by KrF Excimer Laser Ablation

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Jasim Al-Zanganawee ◽  
Adrian Katona ◽  
Calin Moise ◽  
Dionezie Bojin ◽  
Marius Enachescu
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Excimer Laser Ablation ◽  
Laser Ablation Method ◽  
Ablation Product ◽  
Krf Excimer Laser

We report for the first time the production of single wall carbon nanotubes (SWCNTs) by KrF excimer laser ablation method under the krypton gas atmosphere. For the ablation experiment 450 mJ energy and 30 Hz repetition rate KrF excimer laser was used, and the target was prepared with the following composition: 0.6% Ni, 0.6% Co, and 98.8% C (atomic percentage). The ablation product was characterized by confocal Raman microspectroscopy, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and thermogravimetric analysis (TGA). The SWCNTs obtained are a mixture of semiconducting and metallic types with narrow diameters distribution of 1.26 to 1.49 nm, are micrometers long, and contain low amount of graphite and amorphous carbon.

A New Route to Large-Scale Synthesis of Silicon Nanowires in Ultrahigh Vacuum

2007 ◽  
Vol 17 (11) ◽  
pp. 1729-1734 ◽  
Author(s):  
X. Xu ◽  
Y. Wang ◽  
Z. Liu ◽  
R. Zhao
Keyword(s):  
Silicon Nanowires ◽  
Large Scale ◽  
Ultrahigh Vacuum ◽  
Large Scale Synthesis

scholarly journals Electricity as a Cooking Means in Nepal—A Modelling Tool Approach

2018 ◽  
Vol 10 (8) ◽  
pp. 2841 ◽  
Author(s):  
Ramchandra Bhandari ◽  
Surendra Pandit
Keyword(s):  
Growth Rate ◽  
Energy Demand ◽  
Large Scale ◽  
High Growth ◽  
High Growth Rate ◽  
Planning System ◽  
Liquefied Petroleum Gas ◽  
Fuel Switching ◽  
Cooking Energy ◽  
Business As Usual

Cooking energy has an important role in energy demand of Nepal. Over the last decade, import of Liquefied Petroleum Gas (LPG) has increased by 3.3 times as an alternate cooking fuel to kerosene and firewood. The growing subsidy burden to endorse modern fuel switching from traditional energy sources and high import of LPG are challenges for sustainability and energy security. This paper analyzes the future residential cooking energy demand and its environmental and economic impacts from 2015 to 2035 using a Long-range Energy Alternative Planning System (LEAP) tool. In 2035, the LPG demand for cooking is projected to be 26.5 million GJ, 16.3 million GJ, 45.2 million GJ and 58.2 million GJ for business as usual (BAU), low growth rate (LGR), medium growth rate (MGR) and high growth rate (HGR) scenarios, respectively. To substitute LPG with electricity in the cooking sector by 2035, an additional 1207 MW, 734 MW, 2055 MW and 2626 MW hydropower installation is required for BAU, LGR, MGR and HGR scenarios, respectively. In the MGR scenario, substituting LPG with electricity could save from $21.8 million (2016) to $70.8 million (2035) each year, which could be used to develop large-scale hydropower projects in the long term.

Laser Ablation Fabricated Nano-Composite of Metal Silicide Crystallines in Silicon Wire

2000 ◽  
Vol 638 ◽  
Author(s):  
Jifa Qi ◽  
Yasuaki Masumoto
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Growth Process ◽  
Gas Flow ◽  
Metal Silicide ◽  
Si Nanowires ◽  
Nano Composite ◽  
Copper Silicide ◽  
Argon Gas ◽  
Wire Axis

AbstractSilicon nanowires containing a high density of copper atoms were prepared by laser ablation of Si/metal mixture targets at 1200 °C in argon gas flow. Copper atoms can gather in Si nanowires and precipitate into copper silicide nanocrystals distributed alone the wire axis. The diameters of the copper silicide nanocrystals increase with that of the host nanowire. The possible growth process of the composite nanowires was proposed.

scholarly journals State Support for Shared Research Facilities: Any Results Yet?

2021 ◽  
Vol 16 (3) ◽  
pp. 416-440
Author(s):  
Kirill Kalyuzhnyi
Keyword(s):  
Growth Rate ◽  
High Performance ◽  
Large Scale ◽  
High Growth ◽  
High Growth Rate ◽  
The State ◽  
Ministry Of Education ◽  
Average Value ◽  
Monitoring Tools ◽  
Research Facilities

Introduction. The article is based on the findings collected by monitoring the Russian Сore Shared Research Facilities (CSRF) and Large-Scale Research Facilities (LSRF). The monitoring is carried out annually by RIEPL specialists on behalf of the Ministry of Education and Science of Russia. The author suggests that the CSRFs and LSRFs sponsored by the state under the federal target programme Research and Development in Priority Areas of Development in Science and Technology in Russia for 2014-2021 stand to deliver high performance across the key indicators, namely the number of external users, value of the work performed for their benefit, and actual workload on research equipment in the interests of external users. Monitoring Tools. The empirical basis of the study is the reporting data for 2014-2020, obtained from CSRFs and LSRFs representatives through the use of the web forms on the portal http://ckp-rf.ru. Results. In the group of sponsored CSRFs, the high growth rate in the number of external users and the average value of the work completed was due to the expansion of the range of services through the use of equipment purchased under the Federal Target Programme. The growth rate of the actual workload proved to be lower compared to the other groups. In the group of sponsored LSRFs, only the actual workload values showed some growth. The growth rate in the number of external users was lower compared to the non-sponsored facility group; the growth rate in the value of work performed did not change from the 2014 baseline. It is, therefore, concluded that there is a need to abandon the competitive financing of shared use infrastructure in favour of targeted financing. Conclusion. The results may be useful in assessing the state of the Russian research infrastructure and divising guidelines for its continued support.

Oxide-Assisted Semiconductor Nanowire Growth

MRS Bulletin ◽  
1999 ◽  
Vol 24 (8) ◽  
pp. 36-42 ◽  
Author(s):  
S.T. Lee ◽  
N. Wang ◽  
Y.F. Zhang ◽  
Y.H. Tang
Keyword(s):  
Laser Ablation ◽  
Liquid Alloy ◽  
Large Scale ◽  
Dominant Role ◽  
Semiconductor Nanowires ◽  
Scanning Tunneling ◽  
Nanowire Growth ◽  
Si Nanowires ◽  
Tunneling Microscopy ◽  
Alloy Droplet

Semiconductor wires with nanometer widths have attracted much attention in recent years for their potential applications in mesoscopic research and nanodevices. Since the 1960s, Si whiskers grown from the vapor-liquid-solid (VLS) reaction have been extensively studied. In the VLS reaction, Au particles are generally used as the mediating solvent on a Si substrate since Au and Si form a molten alloy at a relatively low temperature. Si in the vapor phase diffuses into the liquid-alloy droplet and bonds to the solid Si at the liquid-solid interface, which results in the growth of Si whiskers. The diameter of the whisker is determined by the diameter of the liquid-alloy droplet at its tip. Si whiskers generally grow along ⟨111⟩ directions epitaxially on Si(111) substrates in the form of single crystals by the VLS reaction.In different materials systems, however, a variety of whisker forms can be obtained. For example, GaP whiskers display rotational twins around their ⟨111⟩ growth axes, while GaAs whiskers grow in the form of the wurtzite structure.Thus far, the synthesis of one-dimensional nanostructured materials on a large scale remains a challenge. In recent years, many efforts have been made to synthesize Si nanowires by employing different methods such as photolithography and etching techniques and scanning tunneling microscopy. One method of particular interest is a recently developed laser ablation of metal-containing semiconductor targets, by which bulk quantities of semiconductor nanowires can be readily obtained. Our recent studies show that oxides play a dominant role in the nucleation and growth of high-quality semiconductor nanowires in bulk quantities by laser ablation, thermal evaporation, or chemical vapor deposition. A new growth mechanism called oxide-assisted nanowire growth has therefore been established. The ability to synthesize large quantities of high-purity (no contamination), ultra-long (in millimeters), and uniform-sized semiconductor nanowires (a few nanometers to tens of nanometers in diameter) from this new technique offers exciting possibilities in fundamental and applied research.

Oriented Si nanowires grown via an SLS mechanism

1999 ◽  
Vol 581 ◽  
Author(s):  
Y. J. Xing ◽  
Z. H. Xi ◽  
Q. L. Hang ◽  
H. F. Yan ◽  
S. Q. Feng ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Silicon Nanowires ◽  
Large Scale ◽  
Whisker Growth ◽  
Ambient Pressure ◽  
Si Nanowires ◽  
Vapor Liquid Solid ◽  
Selected Area Electron Diffraction ◽  
Uniform Diameter ◽  
Solid Liquid

ABSTRACTHighly oriented silicon nanowires were grown on Si (111) substrate via a solid-liquid-solid (SLS) mechanism. Unlike the well known vapor-liquid-solid (VLS) mechanism of whisker growth, no gaseous or liquid Si source was supplied during growth. Ni was used as the liquid forming agent and mixture of H2 and Ar was introduced in the experiment. Oriented silicon nanowires grew at 950°C and the ambient pressure kept at about 200 Torr. The oriented silicon nanowires have a length around I il m and uniform diameter about 25nm. Selected area electron diffraction showed that silicon nanowires are completely amorphous. The approach used here is simple and controllable, and may be useful in large-scale synthesis of various nanowires.

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