scholarly journals State Support for Shared Research Facilities: Any Results Yet?

2021 ◽  
Vol 16 (3) ◽  
pp. 416-440
Author(s):  
Kirill Kalyuzhnyi
Keyword(s):  
Growth Rate ◽  
High Performance ◽  
Large Scale ◽  
High Growth ◽  
High Growth Rate ◽  
The State ◽  
Ministry Of Education ◽  
Average Value ◽  
Monitoring Tools ◽  
Research Facilities

Introduction. The article is based on the findings collected by monitoring the Russian Сore Shared Research Facilities (CSRF) and Large-Scale Research Facilities (LSRF). The monitoring is carried out annually by RIEPL specialists on behalf of the Ministry of Education and Science of Russia. The author suggests that the CSRFs and LSRFs sponsored by the state under the federal target programme Research and Development in Priority Areas of Development in Science and Technology in Russia for 2014-2021 stand to deliver high performance across the key indicators, namely the number of external users, value of the work performed for their benefit, and actual workload on research equipment in the interests of external users. Monitoring Tools. The empirical basis of the study is the reporting data for 2014-2020, obtained from CSRFs and LSRFs representatives through the use of the web forms on the portal http://ckp-rf.ru. Results. In the group of sponsored CSRFs, the high growth rate in the number of external users and the average value of the work completed was due to the expansion of the range of services through the use of equipment purchased under the Federal Target Programme. The growth rate of the actual workload proved to be lower compared to the other groups. In the group of sponsored LSRFs, only the actual workload values showed some growth. The growth rate in the number of external users was lower compared to the non-sponsored facility group; the growth rate in the value of work performed did not change from the 2014 baseline. It is, therefore, concluded that there is a need to abandon the competitive financing of shared use infrastructure in favour of targeted financing. Conclusion. The results may be useful in assessing the state of the Russian research infrastructure and divising guidelines for its continued support.

Homoepitaxial growth and characterization of thick SiC layers with a reduced micropipe density

2004 ◽  
Vol 815 ◽  
Author(s):  
H. Tsuchida ◽  
I. Kamata ◽  
S. Izumi ◽  
T. Tawara ◽  
T. Jikimoto ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Performance ◽  
Defect Density ◽  
Stacking Faults ◽  
High Growth ◽  
High Growth Rate ◽  
Effective Lifetime ◽  
Growth Technique ◽  
Homoepitaxial Growth

AbstractGrowth technique for thick SiC epilayers with a reduced micropipe density has been developed in a vertical hot-wall CVD reactor. Micropipe closing by growing an epilayer is possible with a nearly 100% probability for 4H-SiC substrates oriented (0001) and (000-1) off-cut towards either [11-20] or [1-100]. By applying the micropipe closing technique, a high-performance Schottky barrier diode (SBD) was demonstrated on a substrate including micropipes. Growth of low-doped and thick SiC epilayers is also possible with a good morphology at a high growth rate, and 14.4 kV blocking performance was demonstrated using a 210 μm-thick epilayer. Epitaxial growth on (000-1) substrates with low doping and a low epi-induced defect density was also demonstrated. Deep centers and impurities were investigated to determine the effective lifetime killer of the epilayers. Dislocations and stacking faults in epilayers grown on 4H-SiC substrates off-cut towards different directions were also investigated.

The tendencies in Polish rail transport development in the context of defence requirements

2017 ◽  
Vol 105 (4) ◽  
pp. 135-152
Author(s):  
Katarzyna Pietrzyk-Wiszowaty
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
The State ◽  
Rail Transport ◽  
Railway Transport ◽  
Rail Network ◽  
Economic Considerations

The expansion or modernisation of rail network requires the implementation of various activities that are aimed at, among other things, obtaining the appropriate technical conditions in order to meet the transportation needs of people and cargo. They are mostly dictated by economic considerations, targeted on achieving a high growth rate and strengthening the country’s competitiveness. Defence needs are increasingly irrelevant in the planning and realisation of investments in this area. Therefore it is necessary to closely combine the directions of its development with satisfying the needs of the state defence. Therefore, the aim of this article is an attempt to identify directions of development of railway transport in regard to defence requirements.

scholarly journals Electricity as a Cooking Means in Nepal—A Modelling Tool Approach

2018 ◽  
Vol 10 (8) ◽  
pp. 2841 ◽  
Author(s):  
Ramchandra Bhandari ◽  
Surendra Pandit
Keyword(s):  
Growth Rate ◽  
Energy Demand ◽  
Large Scale ◽  
High Growth ◽  
High Growth Rate ◽  
Planning System ◽  
Liquefied Petroleum Gas ◽  
Fuel Switching ◽  
Cooking Energy ◽  
Business As Usual

Cooking energy has an important role in energy demand of Nepal. Over the last decade, import of Liquefied Petroleum Gas (LPG) has increased by 3.3 times as an alternate cooking fuel to kerosene and firewood. The growing subsidy burden to endorse modern fuel switching from traditional energy sources and high import of LPG are challenges for sustainability and energy security. This paper analyzes the future residential cooking energy demand and its environmental and economic impacts from 2015 to 2035 using a Long-range Energy Alternative Planning System (LEAP) tool. In 2035, the LPG demand for cooking is projected to be 26.5 million GJ, 16.3 million GJ, 45.2 million GJ and 58.2 million GJ for business as usual (BAU), low growth rate (LGR), medium growth rate (MGR) and high growth rate (HGR) scenarios, respectively. To substitute LPG with electricity in the cooking sector by 2035, an additional 1207 MW, 734 MW, 2055 MW and 2626 MW hydropower installation is required for BAU, LGR, MGR and HGR scenarios, respectively. In the MGR scenario, substituting LPG with electricity could save from $21.8 million (2016) to $70.8 million (2035) each year, which could be used to develop large-scale hydropower projects in the long term.

scholarly journals The State of Gender Inequality in India

2016 ◽  
Vol 15 (1) ◽  
pp. 139-157 ◽  
Author(s):  
Singh Sumanjeet
Keyword(s):  
Growth Rate ◽  
Gender Equality ◽  
Present Article ◽  
Gender Inequality ◽  
Gender Gap ◽  
High Growth ◽  
Future Generation ◽  
High Growth Rate ◽  
The State ◽  
Policy Measures

Abstract Despite a high growth rate and plentiful Government measures to encourage gender equality, the gender gap still exists in India. Lack of gender equality not only limits women’s access to resources and opportunities, but also imperils the life prospects of the future generation. In the present article an attempt has been made to examine the problem of gender inequality in India. In this process, the article not only discusses the extent, causes and consequences of the problem, but also suggests policy measures to reduce gender inequality in India.

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

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