Laser Ablation Fabricated Nano-Composite of Metal Silicide Crystallines in Silicon Wire

2000 ◽  
Vol 638 ◽  
Author(s):  
Jifa Qi ◽  
Yasuaki Masumoto
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Growth Process ◽  
Gas Flow ◽  
Metal Silicide ◽  
Si Nanowires ◽  
Nano Composite ◽  
Copper Silicide ◽  
Argon Gas ◽  
Wire Axis

AbstractSilicon nanowires containing a high density of copper atoms were prepared by laser ablation of Si/metal mixture targets at 1200 °C in argon gas flow. Copper atoms can gather in Si nanowires and precipitate into copper silicide nanocrystals distributed alone the wire axis. The diameters of the copper silicide nanocrystals increase with that of the host nanowire. The possible growth process of the composite nanowires was proposed.

scholarly journals Numerical simulation of the oxygen distribution in silicon melt for different argon gas flow rates during Czochralski silicon crystal growth process

2018 ◽  
Vol 204 ◽  
pp. 05013
Author(s):  
Zumrotul Ida ◽  
Jyh-Chen Chen ◽  
Thi Hoai Thu Nguyen
Keyword(s):  
Flow Pattern ◽  
Oxygen Concentration ◽  
Flow Rate ◽  
Growth Process ◽  
Gas Flow ◽  
Silicon Crystal ◽  
Gas Flow Rate ◽  
Flow Rates ◽  
Argon Gas ◽  
Flow Motion

The effects of argon gas flow rate on the oxygen concentration in Czochralski (CZ) grown silicon crystal were examined. To analyze the influence of the argon gas flow rate in CZ growth process, a 200 mm length silicon single crystal was grown. Different argon gas flow rates are considered. The melt flow pattern, temperature and oxygen concentration distributions in the melt and crystal-melt interface are calculated. The results show that the transport of oxygen impurity is quite dependent on the flow motion in the melt. As the argon gas flow rate increases, there is no fundamental change in flow motion of the melt and the oxygen concentration decreases to a minimum value. When the argon gas flow rate increases further, the flow pattern under the melt-crystal interface starting changes and the oxygen concentration has increased after. Therefore, there is an optimum value for the argon gas flow rate for obtaining the lowest oxygen concentration in the melt.

Large Scale Synthesis of Silicon Nanowires by Laser Ablation

1998 ◽  
Vol 526 ◽  
Author(s):  
Y.H. Tang ◽  
Y.F. Zhang ◽  
C.S. Lee ◽  
N. Wang ◽  
D.P. Yu ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Large Scale ◽  
High Growth ◽  
High Growth Rate ◽  
Laser Source ◽  
Si Nanowires ◽  
Laser Ablation Method ◽  
Large Scale Synthesis ◽  
Krf Excimer Laser

AbstractQuasi one-dimensional materials have attracted considerable attention in recent years because of its potential to both fundamental physics and nanoelectronic applications. More recently, we have achieved large scale synthesis of silicon nanowires (SINW) at a high growth rate by laser ablation of Si target at 1200 °C. The laser source was a pulsed KrF excimer laser and the Si targets were made by pressing Si powder of 5 microns in size. 50 sccm Ar was used as a carrying gas flowing from the side near the Si target towards a water-cooled copper finger. Si nanowires have been grown with diameters ranging from 3 to 43 nm and several hundreds microns in length after 2 hours of laser ablation of Si target. The SLNWs were analyzed by XRD, Raman, EDS, TEM and HRTEM. Successful large scale synthesis of SINW by laser ablation extends the pulsed laser ablation method from depositing thin films to synthesis of nanowires.

Size-Dependent Elasticity of Silicon Nanowires

2009 ◽  
Vol 60-61 ◽  
pp. 315-319 ◽  
Author(s):  
W.W. Zhang ◽  
Qing An Huang ◽  
H. Yu ◽  
L.B. Lu
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Silicon Nanowires ◽  
First Principles ◽  
Si Nanowires ◽  
Size Dependent ◽  
Reconstructed Surfaces ◽  
Strain Relationship ◽  
Dynamics Simulations ◽  
Good Agreement

Molecular dynamics simulations are carried out to characterize the mechanical properties of [001] and [110] oriented silicon nanowires, with the thickness ranging from 1.05nm to 3.24 nm. The nanowires are taken to have ideal surfaces and (2×1) reconstructed surfaces, respectively. A series of simulations for square cross-section Si nanowires have been performed and Young’s modulus is calculated from energy–strain relationship. The results show that the elasticity of Si nanowires is strongly depended on size and surface reconstruction. Furthermore, the physical origin of above results is analyzed, consistent with the bond loss and saturation concept. The results obtained from the molecular dynamics simulations are in good agreement with the values of first-principles. The molecular dynamics simulations combine the accuracy and efficiency.

Morphology of Si nanowires fabricated by laser ablation using gold catalysts

2004 ◽  
Vol 79 (4-6) ◽  
pp. 895-897 ◽  
Author(s):  
K. Wang ◽  
S.Y. Chung ◽  
D. Kim
Keyword(s):  
Laser Ablation ◽  
Gold Catalysts ◽  
Si Nanowires

Bottom-up nanoscale patterning and selective deposition on silicon nanowires

2021 ◽  
Author(s):  
Amar Mohabir ◽  
Daniel Aziz ◽  
Amy Brummer ◽  
Kathleen Taylor ◽  
Eric Vogel ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Electronic Devices ◽  
Spatial Relationship ◽  
Atomic Layer ◽  
Semiconductor Nanowires ◽  
Si Nanowires ◽  
Bottom Up ◽  
Nanoscale Patterning ◽  
Layer Deposition ◽  
Dopant Profile

Abstract We demonstrate a bottom-up process for programming the deposition of coaxial thin films aligned to the underlying dopant profile of semiconductor nanowires. Our process synergistically combines three distinct methods – vapor-liquid-solid (VLS) nanowire growth, selective coaxial lithography via etching of surfaces (SCALES), and area-selective atomic layer deposition (AS-ALD) – into a cohesive whole. Here, we study ZrO2 on Si nanowires as a model system. Si nanowires are first grown with an axially modulated n-Si/i-Si dopant profile. SCALES then yields coaxial poly(methyl methacrylate) (PMMA) masks on the n-Si regions. Subsequent AS-ALD of ZrO2 occurs on the exposed i-Si regions and not on those masked by PMMA. We show the spatial relationship between nanowire dopant profile, PMMA masks, and ZrO2 films, confirming the programmability of the process. The nanoscale resolution of our process coupled with the plethora of available AS-ALD chemistries promises a range of future opportunities to generate structurally complex nanoscale materials and electronic devices using entirely bottom-up methods.

Low-Energy Ion Irradiated Silicon Nanowires: Anomalous Plastic Deformation

2018 ◽  
Vol 4 (2) ◽  
Author(s):  
Chu Rainer Kwang-Hua
Keyword(s):  
Plastic Deformation ◽  
Silicon Nanowires ◽  
Room Temperature ◽  
Transition State Theory ◽  
State Theory ◽  
Si Nanowires ◽  
Temperature Dependent ◽  
Temperature Dependent Viscosity ◽  
Si Nanowire ◽  
Dependent Viscosity

We adopted the verified transition state theory, which originates from the quantum chemistry approach to explain the anomalous plastic flow or plastic deformation for Si nanowires irradiated with 100 keV (at room temperature regime) Ar+ ions as well as the observed amorphization along the Si nanowire (Johannes, et al. 2015, “Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires,” Nano Lett., 15, pp. 3800–3807). We shall illustrate some formulations which can help us calculate the temperature-dependent viscosity of flowing Si in nanodomains.

scholarly journals Potential of using inert gas flows for controlling the quality of as-grown silicon single crystal

2020 ◽  
Vol 6 (1) ◽  
pp. 1-7
Author(s):  
Tatyana V. Kritskaya ◽  
Vladimir N. Zhuravlev ◽  
Vladimir S. Berdnikov
Keyword(s):  
Single Crystal ◽  
Carbon Content ◽  
Single Crystals ◽  
Gas Flow ◽  
Thermal Stresses ◽  
Crystal Surface ◽  
Gas Flows ◽  
Reaction Products ◽  
Crystal Silicon ◽  
Argon Gas

We have improved the well-known Czochralski single crystal silicon growth method by using two argon gas flows. One flow is the main one (15–20 nl/min) and is directed from top to bottom along the growing single crystal. This flow entrains reaction products of melt and quartz crucible (mainly SiO), removes them from the growth chamber through a port in the bottom of the chamber and provides for the growth of dislocation-free single crystals from large weight charge. Similar processes are well known and have been generally used since the 1970s world over. The second additional gas flow (1.5–2 nl/min) is directed at a 45 arc deg angle to the melt surface in the form of jets emitted from circularly arranged nozzles. This second gas flow initiates the formation of a turbulent melt flow region which separates the crystallization front from oxygen-rich convective flows and accelerates carbon evaporation from the melt. It has been confirmed that oxygen evaporated from the melt (in the form of SiO) acts as transport agent for nonvolatile carbon. Commercial process implementation has shown that carbon content in as-grown single crystals can be reduced to below the carbon content in the charge. Single crystals grown with two argon gas flows have also proven to have highly macro- and micro-homogeneous oxygen distributions, with much greater lengths of single crystal portions in which the oxygen concentration is constant and below the preset limit. Carbon contents of 5–10 times lower than carbon content in the charge can be achieved with low argon gas consumption per one growth process (15–20 nl/min vs 50–80 nl/min for conventional processes). The use of an additional argon gas flow with a 10 times lower flowrate than that of the main flow does not distort the pattern of main (axial) flow circumvention around single crystal surface, does not hamper the “dislocation-free growth” of crystals and does not increase the density of microdefects. This suggests that the new method does not change temperature gradients and does not produce thermal shocks that may generate thermal stresses in single crystals.

scholarly journals The influence of argon gas flow in the killing of staphylococcus epidermidis bacteria

2018 ◽  
Vol 16 (36) ◽  
pp. 134-139
Author(s):  
Ahmed Mahmoud Shihab
Keyword(s):  
Staphylococcus Epidermidis ◽  
Atmospheric Pressure ◽  
Gas Flow ◽  
Biotechnological Applications ◽  
Plasma System ◽  
Argon Gas ◽  
Killing Rate ◽  
Normal Atmospheric Pressure ◽  
Non Thermal Plasma

In this research, non-thermal plasma system of argon gas is designed to work at normal atmospheric pressure and suitable for work in medical and biotechnological applications. This technique is applied in the treatment of the Staphylococcus epidermidis bacteria and show the role of the flow rate of Argon gas on the killing rate of bacteria, and it obtained a 100 % killing rate during the time of 5 minutes at the flow Argon gas of 5 liters/ min.

scholarly journals The gas flow pattern through small size Resistive Plate Chambers with 2 mm gap

2021 ◽  
Vol 16 (11) ◽  
pp. P11022
Author(s):  
Y. Pezeshkian ◽  
A. Kiyoumarsioskouei ◽  
M. Ahmadpouri ◽  
G. Ghorbani
Keyword(s):  
Gas Flow ◽  
Fluid Dynamic ◽  
Gas Flow Rate ◽  
Argon Gas ◽  
Dynamic Methods ◽  
Gas System ◽  
Gas Molecules ◽  
Simulation Results ◽  
Resistive Plate Chambers ◽  
The Difference

Abstract A prototype of a single-gap glass Resistive Plate Chamber (RPC) is constructed by the authors. To find the requirements for better operation of the detector's gas system, we have simulated the flow of the Argon gas through the detector by using computational fluid dynamic methods. Simulations show that the pressure inside the chamber linearly depends on the gas flow rate and the chamber's output hose length. The simulation results were compatible with experiments. We have found that the pressure-driven speed of the gas molecules is two orders of magnitude larger in the inlet and outlet regions than the blocked corners of a 14 × 14 cm2 chamber, and most likely the difference in speed is higher for larger detectors and different geometries.

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