Cubic InGaN Grown by Mocvd

1998 ◽  
Vol 537 ◽  
Author(s):  
J.B. Li ◽  
Hui Yang ◽  
L.X. Zheng ◽  
D.P. Xu ◽  
Y.T. Wang
Keyword(s):  
Room Temperature ◽  
Emission Peak ◽  
Buffer Layers ◽  
Cubic Phase ◽  
Yellow Luminescence ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Cubic Gan ◽  
Pl Emission

AbstractWe report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL peak are 153 meV and 216 meV for 427 nm and 450 nm emissions, respectively. It is found that the In compositions determined from XRD are not in agreement with those estimated from PL measurements. The reasons for this disagreement are discussed.

scholarly journals Cubic InGaN Grown by MOCVD

1999 ◽  
Vol 4 (S1) ◽  
pp. 239-243
Author(s):  
J.B. Li ◽  
Hui Yang ◽  
L.X. Zheng ◽  
D.P. Xu ◽  
Y.T. Wang
Keyword(s):  
Room Temperature ◽  
Emission Peak ◽  
Buffer Layers ◽  
Cubic Phase ◽  
Yellow Luminescence ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Cubic Gan ◽  
Pl Emission

We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL peak are 153 meV and 216 meV for 427 nm and 450 nm emissions, respectively. It is found that the In compositions determined from XRD are not in agreement with those estimated from PL measurements. The reasons for this disagreement are discussed.

The Effect of Low Temperature GaAs Nucleation on the Growth of GaN on Silicon (001) During MOVPE Process

1997 ◽  
Vol 482 ◽  
Author(s):  
L. X. Zheng ◽  
J. W. Liang ◽  
H. Yang ◽  
J. B. Li ◽  
Y. T. Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
High Quality ◽  
Nucleation Layer ◽  
X Ray ◽  
Cubic Gan ◽  
Low Temperature Gaas

AbstractHigh quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10–20nm GaAs nucleation layer grown by ALE.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Synthesis and Luminescence Properties of Chalcopyrite-Type CuAlS2

2006 ◽  
Vol 301 ◽  
pp. 177-180 ◽  
Author(s):  
Yuichiro Kuroki ◽  
Tomoichiro Okamoto ◽  
Masasuke Takata
Keyword(s):  
Diffraction Analysis ◽  
Room Temperature ◽  
Single Phase ◽  
Elevated Temperatures ◽  
Emission Peak ◽  
Maximum Intensity ◽  
X Ray Diffraction ◽  
Ultraviolet Emission ◽  
X Ray ◽  
Copper Aluminum

Copper aluminum disulfide (CuAlS2) powders were synthesized in an evacuated ampoule at elevated temperatures. X-ray diffraction analysis revealed that the powders heated at temperatures higher than 800oC were single-phase CuAlS2. In the cathodoluminescence (CL) spectra measured at room temperature, the powders heated at temperatures higher than 600oC exhibited a visible emission peak at approximately 1.8 eV and a distinct ultraviolet emission peak at 3.45 eV. The powder heated at 700oC showed the maximum intensity of ultraviolet emission which is considered to be associated with excitons.

X-ray diffraction study of oxygen-conducting compoundsLn2Mo2O9(Ln= La, Pr)

2014 ◽  
Vol 70 (4) ◽  
pp. 669-675 ◽  
Author(s):  
Alexander M. Antipin ◽  
Olga A. Alekseeva ◽  
Natalia I. Sorokina ◽  
Alexandra N. Kuskova ◽  
Michail Yu. Presniakov ◽  
...  
Keyword(s):  
Room Temperature ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Ion Migration ◽  
Transmission Microscopy ◽  
Coordination Environment ◽  
X Ray ◽  
Oxygen Ions ◽  
Oxygen Ion ◽  
Oxygen Ion Migration

The La2Mo2O9(LM) and Pr2Mo2O9(PM) single crystals are studied using precision X-ray diffraction and high-resolution transmission microscopy at room temperature. The crystal structures are determined in the space groupP213. La and Pr atoms, as well as Mo1 and O1 atoms, are located in the vicinity of the threefold axes rather than on the axes as in the high-temperature cubic phase. In both structures studied, the O2 and O3 positions are partially occupied. The coexistence of different configurations of the Mo coordination environment facilitates the oxygen-ion migration in the structure. Based on the X-ray data, the activation energies of O atoms are calculated and the migration paths of oxygen ions in the structures are analysed. The conductivity of PM crystals is close to that of LM crystals. The O2 and O3 atoms are the main contributors to the ion conductivity of LM and PM.

MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

1999 ◽  
Vol 595 ◽  
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

AbstractWe report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

scholarly journals Near UV-Blue Excitable Green-Emitting Nanocrystalline Oxide

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
C. E. Rodríguez-García ◽  
N. Perea-López ◽  
G. A. Hirata
Keyword(s):  
Broad Band ◽  
Emission Peak ◽  
Electronic Transitions ◽  
Excitation Band ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Pl Emission ◽  
Intense Broad Band ◽  
Nanocrystalline Oxide

Green-emitting Eu-activated powders were produced by a two-stage method consisting of pressure-assisted combustion synthesis and postannealing in ammonia. The as-synthesized powders exhibited a red photoluminescence (PL) peak located at  nm when excited with  nm UV. This emission peak corresponds to the5D0→7F2transition in Eu3+. After annealing in ammonia, the PL emission changed to an intense broad-band peak centered at  nm, most likely produced by 4f65d1→4f7electronic transitions in Eu2+. This green-emitting phosphor has excitation band in the near UV-blue region (–450 nm). X-ray diffraction analysis reveals mainly the orthorhombic EuAlO3and Al2O3phases. Transmission electron microscopy observations showed that the grains are formed by faceted nanocrystals (~4 nm) of polygonal shape. The excellent excitation and emission properties make these powders very promising to be used as phosphors in UV solid-state diodes coupled to activate white-emitting lamps.

Thermoelectric Properties of C-Axis-Oriented Ca3Co4O9+δ Films Grown on MgO-Buffered Si (100) by PLD Technique

2010 ◽  
Vol 29-32 ◽  
pp. 1913-1918
Author(s):  
Xia Zhang ◽  
Hong Chen ◽  
Qiu Hui Liao ◽  
Xia Li
Keyword(s):  
Thin Films ◽  
State Of The Art ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Current State ◽  
Good Crystallinity

High-quality c-axis-oriented Ca3Co4O9+δ thin films have been grown directly on Si (100) wafers with inserting MgO buffer layers by pulsed-laser deposition (PLD). X-ray diffraction and scan electron microscopy show good crystallinity of the Ca3Co4O9+δ films. The resistivity and Seebeck coefficient of the Ca3Co4O9+δ thin films on Si (100) substrates are 9.8 mΩcm and 189 μV/K at the temperature of 500K, respectively, comparable to the single-crystal samples. This advance demonstrates the possibility of integrating the cobaltate-based high thermoelectric materials with the current state-of-the-art silicon technology for thermoelectricity-on-a-chip applications.

scholarly journals Experimental Investigations of the Interaction of SO2 with MgO

1999 ◽  
Vol 590 ◽  
Author(s):  
Andrea Freitag ◽  
J. A. Rodriguez ◽  
J. Z. Larese
Keyword(s):  
High Resolution ◽  
Film Thickness ◽  
Room Temperature ◽  
Temperature Programmed Desorption ◽  
Experimental Investigations ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Temperature Programmed ◽  
X Ray Absorption

ABSTRACTHigh resolution adsorption isotherms, temperature programmed desorption (TPD), x-ray diffraction (XRD) and x-ray absorption near edge spectroscopy (XANES) methods were used to investigate the interaction of SO2 with high quality MgO powders. The results of these investigations indicate that when SO2 is deposited on MgO in monolayer quantities at temperatures near 100K both SO3 and SO4 species form that are not removed by simply pumping on the pre-dosed samples at room temperature. TPD and XANES studies indicate that heating of pre-dosed MgO samples to temperatures above 350 °C is required for full removal of the SO3/SO4 species. XANES measurements made as a function of film thickness indicate for coverages near monolayer completion that the SO4 species form first.

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