Characterization and Integration in Cu Damascene Structures of AURORA, an Inorganic Low-k Dielectric

2000 ◽  
Vol 612 ◽  
Author(s):  
R. A. Donaton ◽  
B. Coenegrachts ◽  
E. Sleeckx ◽  
M. Schaekers ◽  
G. Sophie ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Pore Size ◽  
Carbon Concentration ◽  
Low Carbon ◽  
Small Pore Size ◽  
Damascene Process ◽  
Small Pore ◽  
Line Spacing ◽  
Low K

AbstractAURORA films, which have a Si-O-Si network with –CH3 terminations, were characterized and integrated into Cu single damascene structures. The relatively low carbon concentration (∼ 20%) and the very small pore size (∼ 0.6 nm) found could be advantageous during integration of AURORA. Integration of AURORA into Cu single damascene structures was successfully achieved. Suitable resist strip processes, which are critical for Si-O-C type materials, were developed, resulting in trenches with satisfactory profiles. After a complete single damascene process, a interline dielectric constant value of 2.7 was found for line spacing down to 0.25 µm.

Ultra Low-k Materials Based on Self-Assembled Organic Polymers

2011 ◽  
Vol 1335 ◽  
Author(s):  
M. Pantouvaki ◽  
L. Zhao ◽  
C. Huffman ◽  
K. Vanstreels ◽  
I. Ciofi ◽  
...  
Keyword(s):  
Pore Size ◽  
Material Properties ◽  
Open Porosity ◽  
Dielectric Breakdown ◽  
Organic Polymers ◽  
Plasma Damage ◽  
Small Pore Size ◽  
Small Pore ◽  
Lower Porosity ◽  
Low K

ABSTRACTThe material properties of two ultra low-k organic polymers are characterized for copper interconnect integration. The k-values are 2.2-2.3 for both. Compared to OSG materials of similar k-values, these polymers have lower porosity and smaller pore size, achieved using selfassembled chemistry. Both materials demonstrate excellent resistance to plasma damage: no water uptake was detected after exposure to selected etching plasmas. This characteristic, combined with the small pore size and low porosity, results in the successful integration of the organic low-ks in 80 nm spacing with no significant increase in the integrated k-values.It is found that higher open porosity in polymer A is accompanied by higher leakage current, which is not however linked to lower dielectric breakdown lifetimes.

ChemInform Abstract: C2-C4 OLEFINS BY REACTION OF METHANOL ON ZEOLITES OF SMALL PORE SIZE

1982 ◽  
Vol 13 (42) ◽  
Author(s):  
U. DETTMEIER ◽  
H. LITTERER ◽  
H. BALTES ◽  
W. HERZOG ◽  
E. I. LEUPOLD ◽  
...  
Keyword(s):  
Pore Size ◽  
Small Pore Size ◽  
Small Pore

scholarly journals Enzyme immobilization by the formation of enzyme coating on small pore-size ion-exchangers.

1990 ◽  
Vol 54 (6) ◽  
pp. 1557-1558 ◽  
Author(s):  
Akiko KUROTA ◽  
Yoshiro KAMATA ◽  
Fumio YAMAUCHI
Keyword(s):  
Pore Size ◽  
Enzyme Immobilization ◽  
Ion Exchangers ◽  
Small Pore Size ◽  
Small Pore ◽  
Enzyme Coating

Expanding Small Pore Size of the Bimodal Catalyst with Surfactant and Its Application in Slurry-phase Fischer-Tropsch Synthesis

2016 ◽  
Vol 1 (4) ◽  
pp. 778-783 ◽  
Author(s):  
Daisuke Ishihara ◽  
Jian Sun ◽  
Jie Li ◽  
Qinhong Wei ◽  
Noritatsu Tsubaki
Keyword(s):  
Pore Size ◽  
Tropsch Synthesis ◽  
Fischer Tropsch ◽  
Fischer Tropsch Synthesis ◽  
Small Pore Size ◽  
Slurry Phase ◽  
Small Pore

Dependence of dielectric constant of SiOCH low-k films on porosity and pore size

2015 ◽  
Vol 33 (2) ◽  
pp. 020603 ◽  
Author(s):  
Alexander Palov ◽  
Tatiana V. Rakhimova ◽  
Mikhail B. Krishtab ◽  
Mikhail R. Baklanov
Keyword(s):  
Dielectric Constant ◽  
Pore Size ◽  
Low K

scholarly journals The Evolution of Organosilicon Precursors for Low-k Interlayer Dielectric Fabrication Driven by Integration Challenges

Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 4827
Author(s):  
Nianmin Hong ◽  
Yinong Zhang ◽  
Quan Sun ◽  
Wenjie Fan ◽  
Menglu Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Data Storage ◽  
Integrated Circuit ◽  
Porous Silica ◽  
Dielectric Materials ◽  
Interlayer Dielectric ◽  
Damascene Process ◽  
Key Issues ◽  
Deposition Processes ◽  
Low K

Since the application of silicon materials in electronic devices in the 1950s, microprocessors are continuously getting smaller, faster, smarter, and larger in data storage capacity. One important factor that makes progress possible is decreasing the dielectric constant of the insulating layer within the integrated circuit (IC). Nevertheless, the evolution of interlayer dielectrics (ILDs) is not driven by a single factor. At first, the objective was to reduce the dielectric constant (k). Reduction of the dielectric constant of a material can be accomplished by selecting chemical bonds with low polarizability and introducing porosity. Moving from silicon dioxide, silsesquioxane-based materials, and silica-based materials to porous silica materials, the industry has been able to reduce the ILDs’ dielectric constant from 4.5 to as low as 1.5. However, porous ILDs are mechanically weak, thermally unstable, and poorly compatible with other materials, which gives them the tendency to absorb chemicals, moisture, etc. All these features create many challenges for the integration of IC during the dual-damascene process, with plasma-induced damage (PID) being the most devastating one. Since the discovery of porous materials, the industry has shifted its focus from decreasing ILDs’ dielectric constant to overcoming these integration challenges. More supplementary precursors (such as Si-C-Si structured compounds), deposition processes (such as NH3 plasma treatment), and post porosity plasma protection treatment (P4) were invented to solve integration-related challenges. Herein, we present the evolution of interlayer dielectric materials driven by the following three aspects, classification of dielectric materials, deposition methods, and key issues encountered and solved during the integration phase. We aim to provide a brief overview of the development of low-k dielectric materials over the past few decades.

EVALUATION OF ANTI-AGING AND ANTI-ACNE EFFECT OF ANDALIMAN (ZANTHOXYLUM ACANTHOPODIUM DC.) ETHANOLIC EXTRACT PEEL OFF GEL MASK

2018 ◽  
Vol 11 (13) ◽  
pp. 90
Author(s):  
Ismanelly Hanum T ◽  
Lia Laila
Keyword(s):  
Polyvinyl Alcohol ◽  
Pore Size ◽  
Dosage Form ◽  
Black Spot ◽  
Ethanolic Extract ◽  
Distilled Water ◽  
Small Pore Size ◽  
Small Pore ◽  
Carbomer 940 ◽  
Skin Moisture

Objective: The study was conducted to evaluate the anti-aging and anti-acne effect of and aliman ethanolic extract (AEE) in the form of peel off gel mask (PGM) on human skin. Methods: The formulation of PGM base was consisted of polyvinyl alcohol, glycerine, methylparaben, propylparaben, Carbomer 940, and distilled water (blank). The AEE (30%) was formulated in the PGM base and labeled as F1. The anti-aging and anti-acne tests were conducted by comparing the blank and the F1. The evaluation of anti-aging activity was conducted using skin analyzer apparatus. The aging parameters were moisture, evenness, pore size, black spot, and wrinkle of the skin. The anti-acne evaluation was conducted on color, shape, volume, and number of acne. The data were collected for 4 weeks. Results: The anti-aging evaluation of andaliman PGM showed that the and AEE PGM could pretend the skin moisture, skin evenness, small pore size, and declined in number of black spot and wrinkle. The anti-acne evaluation showed the healing of acne after 4 weeks treatment. Conclusion: It is concluded that and AEE PGM can be used as an effective anti-aging and anti-acne dosage form.

A cobalt metal-organic framework with small pore size for adsorptive separation of CO2 over N2 and CH4

AIChE Journal ◽  
2017 ◽  
Vol 63 (10) ◽  
pp. 4532-4540 ◽  
Author(s):  
Bohan Shan ◽  
Jiuhao Yu ◽  
Mitchell R. Armstrong ◽  
Dingke Wang ◽  
Bin Mu ◽  
...  
Keyword(s):  
Pore Size ◽  
Metal Organic Framework ◽  
Cobalt Metal ◽  
Small Pore Size ◽  
Adsorptive Separation ◽  
Small Pore ◽  
Metal Organic ◽  
Separation Of Co2 ◽  
Organic Framework

The Study Based on LABVIEW of the Positioning Accuracy of Spinneret Microporous Fine Machine

2013 ◽  
Vol 712-715 ◽  
pp. 1347-1350
Author(s):  
Si Yu Liu ◽  
Pei Feng ◽  
Chong Chang Yang
Keyword(s):  
Pore Size ◽  
High Precision ◽  
Vital Role ◽  
Positioning System ◽  
Precision Positioning ◽  
Positioning Accuracy ◽  
Small Pore Size ◽  
Small Pore ◽  
Positioning Method

The microporous on spinneret has the characteristics of high precision, small pore size and large quantity. Spinneret microporous finishing operation is mainly used for removing the burr formed on the spinneret silk surface after micropores drilling and punching. The burrs seriously affect the quality of the spinning fibers. Micropore spinneret finishing plays a vital role in improving the quality of processing micropore. This paper introduces a system consisting of the spinneret micropore fine machine,then focuses on fine machine positioning system and proposes a high-precision positioning method of the microporous.

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