High-Dose Titanium Ion Implantation into Epitaxial Si/3C-SiC/Si Layer Systems for Electrical Contact Formation

2000 ◽  
Vol 622 ◽  
Author(s):  
Jörg K.N. Lindner ◽  
Stephanie Wenzel ◽  
Bernd Stritzker
Keyword(s):  
Surface Layer ◽  
Solid State ◽  
Ion Implantation ◽  
Silicon Substrate ◽  
Ion Beam ◽  
Electrical Contact ◽  
Titanium Silicide ◽  
Solid State Reactions ◽  
High Dose ◽  
Homogeneous Surface

ABSTRACTHigh-dose titanium implantations have been performed into ion beam synthesized heteroepitaxial layer systems of Si/3C-SiC/Si(100) in order to study the formation of titanium silicide layers in the silicon top layer. The structure and composition of layers was analysed using RBS, XRD, XTEM and EFTEM. The sputtering rates of 180 keV Ti ions were determined using the lower SiC/Si interface as a marker. A homogeneous surface layer with the stoichiometry of TiSi2 was formed by a nearly stoichiometric implantation and subsequent annealing. The formation of more metal-rich silicides was observed at doses where the peak Ti concentration largely exceeds the TiSi2 stoichiometry and where the total amount of Ti atoms in the top layer is greater than the amount needed to convert the entire Si top layer into TiSi2. Under these conditions, strong solid state reactions of the implanted Ti atoms with the buried SiC layer and the silicon substrate are observed.

Industrial Applications of Ion Implantation

1983 ◽  
Vol 27 ◽  
Author(s):  
J.K. Hirvoney
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Industrial Applications ◽  
The Other ◽  
High Dose ◽  
Nitrogen Implantation ◽  
Aqueous Corrosion ◽  
Wear Reduction ◽  
Ion Species ◽  
Corrosion And Oxidation

ABSTRACTThe use of ion implantation for non-semiconductor applications has evolved steadily over the last decade. To date, industrial trials of this technology have been mainly directed at the wear reduction of steel and cobalt-cemented tungsten carbide tools by high dose nitrogen implantation. However, several other surface sensitive properties of metals such as fatigue, aqueous corrosion, and oxidation, have benefitted from either i)direct ion implantation of various ion species, ii)the use of ion beams to “intermix” a deposited thin film on steel or titanium alloy substrates, or iii)the deposition of material in conjunction with simultaneous ion bombardment.This paper will concentrate on applications that have experienced the most industrial trials, mainly high dose nitrogen implantation for reducing wear, but will present the features of the other ion beam based techniques that will make them appear particularly promising for future commercial utilization.

keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
J.K.N. Lindner ◽  
A. Frohnwieser ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Ion Implantation ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Ion Beam ◽  
High Dose ◽  
Layer Formation ◽  
Substrate Orientation ◽  
Ion Beam Synthesis ◽  
Buried Layers ◽  
Precipitate Layer

AbstractHomogenous, epitaxial buried layers of 3C-SÍC have been formed in Si(100) and Si(lll) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1250 °C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favourable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.

Formation of buried α- and β- FeSi2 in (100) Si by high dose ion implantation

1992 ◽  
Vol 279 ◽  
Author(s):  
K. Maex ◽  
A. Lauwers ◽  
M. Van Hove ◽  
W. Vandervorst ◽  
M. Van Rossum
Keyword(s):  
Ion Implantation ◽  
Hall Effect ◽  
Phase Formation ◽  
Ion Beam ◽  
High Dose ◽  
Spreading Resistance ◽  
Orientation Effects ◽  
Transport Measurements ◽  
Hall Effect Measurements ◽  
Anneal Temperature

ABSTRACTA study on ion beam synthesis of buried α- and β-FeSi2 in >100< Si is presented. Phase formation has been investigated as a function of implant and anneal temperature. Layer characterization was performed by RBS, XRD, resistivity, spreading resistance and Hall effect measurements. Orientation effects in the layers have been observed depending on the implant temperature. Transport measurements show that die holes are the majority carriers in the semiconducting layers.

Raman Spectroscopic Study of Ag-, W- and Pd-Ions Implanted Polyimde Films

1994 ◽  
Vol 354 ◽  
Author(s):  
Hiroshi Watanabe ◽  
Katsuo Takahashl ◽  
Masaya Iwaki
Keyword(s):  
Surface Layer ◽  
Ion Implantation ◽  
Raman Spectra ◽  
Polyimide Film ◽  
Laser Raman Spectroscopy ◽  
High Dose ◽  
Polyimide Films ◽  
Carbon Structure ◽  
Raman Spectroscopic ◽  
Laser Raman

AbstractA study has been made of the carbon formation in the surface layer of Ag-, W- and Pd-ions implanted polyimide films. The doses of 130 KeV Ag-ions and 190 KeV W-ions ranged from lxlO16 to 5×1017 atoms/cm2. The doses of 100 KeV Pd-ions ranged from 5×1016 to 2×1017 atoms/cm2. The carbon structure in implanted layers was characterized by laser Raman spectroscopy (LRS). Non-implanted polyimide film has very strong intensity of fluorescence, and the intensity of all W-, Ag- and Pd-ions implanted specimens decreases with the increase in dose. The intensity of Raman spectra for both W- and Ag-ions implanted specimens increases with the increase in dose. For Pd-ion implanted specimens, the Raman spectrum of carbon is hardly observed even with a high dose. Raman spectra for W- or Ag-ions implanted specimens with a high dose show that the diamond-like carbon (DLC) exist in the implanted layers. It is found that the DLC structures in the W- and Ag-ions implanted layers have graphite-like and amorphous-like structures, respectively. We propose that transparency carbon structure in implanted layers is generated by Pd-ion implantation. It is concluded that marked DLC formation in surface layer of polyimide films can be caused by Ag- or W-ions implantation except Pd-ion implantation, and carbon structure in implanted layers depends strongly on the implanted elements.

Nanomechanical properties of energetically treated polyethylene surfaces

2002 ◽  
Vol 17 (2) ◽  
pp. 423-430 ◽  
Author(s):  
C. Klapperich ◽  
L. Pruitt ◽  
K. Komvopoulos
Keyword(s):  
Mechanical Properties ◽  
Low Temperature ◽  
Ion Implantation ◽  
Ion Beam ◽  
Plasma Modification ◽  
High Dose ◽  
Oxygen Ion ◽  
Ion Beam Treatment ◽  
Argon Ion ◽  
Oxygen Ion Implantation

The effects of energetic treatments, crosslinking, and plasma modification on the surface mechanical properties and deformation behavior of ultrahigh molecular weight polyethylene (UHMWPE) were examined in light of nanoindentation experiments performed with a surface force microscope. Samples of UHMWPE were subjected to relatively high-dose gamma irradiation, oxygen ion implantation, and argon ion beam treatment. A range of crosslinking was achieved by varying the radiation dose. In addition, low-temperature plasma treatment with hexamethyldisiloxane/O2 and C3F6 was investigated for comparison. The surface mechanical properties of the treated UHMWPE samples are compared with those of untreated UHMWPE samples used as controls. Surface adhesion measurements obtained from the nanoindentation material responses are also discussed in terms of important treatment parameters. Results demonstrate that high-dose oxygen ion implantation, argon ion beam treatment, and low-temperature C3F6 plasma modification are effective treatments for enhancing the surface mechanical properties of UHMWPE.

Silicided Shallow Junction Formation Using Ion Implantation and Thermal Annealing

1988 ◽  
Vol 128 ◽  
Author(s):  
Leonard M. Rubin ◽  
N. Herbots ◽  
D. Hoffman ◽  
D. Ma
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Ion Beam ◽  
Thermal Reaction ◽  
Titanium Silicide ◽  
Native Oxide ◽  
Boron Implantation ◽  
Sputter Deposited ◽  
Mass Spectometry ◽  
And Control

ABSTRACTThe combination of arsenic and boron implantation with rapid thermal annealing (RTA) has been investigated to form shallow p-n junctions under a titanium silicide (TiSi2) metallization. The use of TiSi2 as a connection material can lead to the destruction of the junction if the kinetics of silicidation and doping are not well controlled. The purpose of this study is to better understand and control these kinetics, using far-from equilibrium processing such as ion implantation and RTA. The structures were characterized by Rutherford Backscattering Spectometry (RBS) for arsenic and silicide profiling, Secondary Ion Mass Spectometry (SIMS) for boron profiling, Scanning Electron Microscopy (SEM), and electrical sheet resistance measurements. Two procedures were investigated. Both involved the thermal reaction of Ti thin films, sputter-deposited with thicknesses ranging between 40 and 80 nm. In the first experiment, the as-deposited films were implanted with either 115 keV arsenic or 28 keV boron to form the junction, disperse the native oxide, and ion beam mix the Ti and Si. The films were then subjected to an RTA at 750°C for 15 to 60 seconds, which leads to TiSi2 formation in unimplanted films. Implantation was found to actually prevent TiSi2 formation. Ion transport calculations indicated that dopant pile-up at the interface might inhibit silicidation while higher energies and larger implant doses can more effectively ion beam mix Ti and Si. A more attractive solution consists of first forming TiSi2 from the as-deposited Ti by RTA, and then implanting to form the junction. This resulted in better control of the junction thickness. A sharp increase in the TiSi2 resistivity was found after implantation but the original value could be restored by a second RTA. This RTA also electrically activated the dopants and recrystallized the junction. The material properties of Ti/Si and TiSi2/Si under ion bombardment, RTA, doping, and conventional furnace annealing will be discussed.

scholarly journals Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

1989 ◽  
Vol 147 ◽  
Author(s):  
I. G. Brown ◽  
M. D. Rubin ◽  
K. M. Yu ◽  
R. Mutikainen ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Ion Beam Modification

AbstractWe have used high-dose metal ion implantation to ‘fine tune’ the composition of Y-Ba- Cu-O thin films. The films were prepared by either of two rf sputtering systems. One system uses three modified Varian S-guns capable of sputtering various metal powder targets; the other uses reactive rf magnetron sputtering from a single mixed-oxide stoichiometric solid target. Film thickness was typically in the range 2000–5000 A. Substrates of magnesium oxide, zirconia-buffered silicon, and strontium titanate have been used. Ion implantation was carried out using a metal vapor vacuum arc (MEVVA) high current metal ion source. Beam energy was 100–200 keV, average beam current about 1 mA, and dose up to about 1017 ions/cm2. Samples were annealed at 800 – 900°C in wet oxygen. Film composition was determined using Rutherford Backscattering Spectrometry (RBS), and the resistivity versus temperature curves were obtained using a four-point probe method. We find that the zero-resistance temperature can be greatly increased after implantation and reannealing, and that the ion beam modification technique described here provides a powerful means for optimizing the thin film superconducting properties.

Solid State Interfacial Reactions Between Tic Thin Films and Ti3AI Substrates

1995 ◽  
Vol 398 ◽  
Author(s):  
Weimin Si ◽  
Michael Dudley ◽  
Pengxing Li ◽  
Renjie Wu
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Ion Beam ◽  
Depth Profiling ◽  
Solid State Reactions ◽  
Reaction Products ◽  
Ion Beam Sputtering ◽  
Thermodynamical Equilibrium ◽  
Beam Sputtering ◽  
Kinetics Of

ABSTRACTThe products and kinetics of solid state reactions between TiC and Ti3Al have been investigated using X-ray diffractometry (XRD) and Auger electron spectroscopy (AES) with Ar ion beam sputtering. Diffusion couples were prepared by sputtering TiC thin films onto polished Ti3AI substrates, and then isothermally annealed in vacuum in the temperature range of 800 to 1000°C for 0.25 to 2.25 hours. The thickness of the interfacial reaction layer was obtained from AES elemental concentration depth profiling, while the reaction products were identified from XRD spectra. In the TiC/Ti3Al system, the reaction product was primarily P(Ti3AlC) phase. The growth-rate of the reaction product was fitted to a parabolic growth law (dZ/dt = k1/Z) and the activation energy of the rate constant was about 36.16 kcal/mole. The reaction mechanism will be discussed on the basis of thermodynamical equilibrium in Ti-Al-C ternary system.

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