Industrial Applications of Ion Implantation

1983 ◽  
Vol 27 ◽  
Author(s):  
J.K. Hirvoney
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Industrial Applications ◽  
The Other ◽  
High Dose ◽  
Nitrogen Implantation ◽  
Aqueous Corrosion ◽  
Wear Reduction ◽  
Ion Species ◽  
Corrosion And Oxidation

ABSTRACTThe use of ion implantation for non-semiconductor applications has evolved steadily over the last decade. To date, industrial trials of this technology have been mainly directed at the wear reduction of steel and cobalt-cemented tungsten carbide tools by high dose nitrogen implantation. However, several other surface sensitive properties of metals such as fatigue, aqueous corrosion, and oxidation, have benefitted from either i)direct ion implantation of various ion species, ii)the use of ion beams to “intermix” a deposited thin film on steel or titanium alloy substrates, or iii)the deposition of material in conjunction with simultaneous ion bombardment.This paper will concentrate on applications that have experienced the most industrial trials, mainly high dose nitrogen implantation for reducing wear, but will present the features of the other ion beam based techniques that will make them appear particularly promising for future commercial utilization.

High-Dose Titanium Ion Implantation into Epitaxial Si/3C-SiC/Si Layer Systems for Electrical Contact Formation

2000 ◽  
Vol 622 ◽  
Author(s):  
Jörg K.N. Lindner ◽  
Stephanie Wenzel ◽  
Bernd Stritzker
Keyword(s):  
Surface Layer ◽  
Solid State ◽  
Ion Implantation ◽  
Silicon Substrate ◽  
Ion Beam ◽  
Electrical Contact ◽  
Titanium Silicide ◽  
Solid State Reactions ◽  
High Dose ◽  
Homogeneous Surface

ABSTRACTHigh-dose titanium implantations have been performed into ion beam synthesized heteroepitaxial layer systems of Si/3C-SiC/Si(100) in order to study the formation of titanium silicide layers in the silicon top layer. The structure and composition of layers was analysed using RBS, XRD, XTEM and EFTEM. The sputtering rates of 180 keV Ti ions were determined using the lower SiC/Si interface as a marker. A homogeneous surface layer with the stoichiometry of TiSi2 was formed by a nearly stoichiometric implantation and subsequent annealing. The formation of more metal-rich silicides was observed at doses where the peak Ti concentration largely exceeds the TiSi2 stoichiometry and where the total amount of Ti atoms in the top layer is greater than the amount needed to convert the entire Si top layer into TiSi2. Under these conditions, strong solid state reactions of the implanted Ti atoms with the buried SiC layer and the silicon substrate are observed.

Materials Science Issues of Plasma Source Ion Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
M. Nastasi ◽  
A.A. Elmoursi ◽  
R.J. Faehl ◽  
A.H. Hamdi ◽  
I. Henins ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Materials Science ◽  
Ion Beam ◽  
Value Added ◽  
Plasma Source ◽  
Industrial Applications ◽  
Plasma Source Ion Implantation ◽  
Potential Applications ◽  
Surface Modification Techniques ◽  
Wear Coatings

AbstractIon beam processing, including ion implantation and ion beam assisted deposition (IBAD), are established surface modification techniques which have been used successfully to synthesize materials for a wide variety of tribological applications. In spite of the flexibility and promise of the technique, ion beam processing has been considered too expensive for mass production applications. However, an emerging technology, Plasma Source Ion Implantation (PSII), has the potential of overcoming these limitations to become an economically viable tool for mass industrial applications. In PSII, targets are placed directly in a plasma and then pulsed-biased to produce a non-line-of-sight process for intricate target geometries without complicated fixturing. If the bias is a relatively high negative potential (20-100kV) ion implantation will result. At lower voltages (50-1200V), deposition occurs. Potential applications for PSII are in low-value-added products such as tools used in manufacturing, orthopedic devices, and the production of wear coatings for hard disk media. This paper will focus on the technology and materials science associated with PSII.

keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
J.K.N. Lindner ◽  
A. Frohnwieser ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Ion Implantation ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Ion Beam ◽  
High Dose ◽  
Layer Formation ◽  
Substrate Orientation ◽  
Ion Beam Synthesis ◽  
Buried Layers ◽  
Precipitate Layer

AbstractHomogenous, epitaxial buried layers of 3C-SÍC have been formed in Si(100) and Si(lll) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1250 °C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favourable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.

Formation of buried α- and β- FeSi2 in (100) Si by high dose ion implantation

1992 ◽  
Vol 279 ◽  
Author(s):  
K. Maex ◽  
A. Lauwers ◽  
M. Van Hove ◽  
W. Vandervorst ◽  
M. Van Rossum
Keyword(s):  
Ion Implantation ◽  
Hall Effect ◽  
Phase Formation ◽  
Ion Beam ◽  
High Dose ◽  
Spreading Resistance ◽  
Orientation Effects ◽  
Transport Measurements ◽  
Hall Effect Measurements ◽  
Anneal Temperature

ABSTRACTA study on ion beam synthesis of buried α- and β-FeSi2 in >100< Si is presented. Phase formation has been investigated as a function of implant and anneal temperature. Layer characterization was performed by RBS, XRD, resistivity, spreading resistance and Hall effect measurements. Orientation effects in the layers have been observed depending on the implant temperature. Transport measurements show that die holes are the majority carriers in the semiconducting layers.

Friction Characteristics of B+- and N2+-Implanted Fe-Cr Alloys

1988 ◽  
Vol 128 ◽  
Author(s):  
Jun Sasaki ◽  
Masaya Iwaki
Keyword(s):  
Friction Coefficient ◽  
Ion Implantation ◽  
Room Temperature ◽  
Chromium Content ◽  
Life Time ◽  
Nitrogen Implantation ◽  
Friction Characteristics ◽  
Friction Measurements ◽  
Nitrogen Ion ◽  
Ion Species

ABSTRACTA study has been made on friction and hardness of boron and nitrogen ion implanted Fe-Cr alloys. Ion implantation has been carried out with doses ranging from 5 wt% up to 20 wt% at energies of 50, 100 and 150 keY at room temperature. Reciprocal traces for friction coefficient measurements were performed by using a Bowden-Leben tester at a low speed without lubricant. Hardness was measured by using a micro-Vickers tester at a load of 2gf. Hardness of the specimen increases after the implantation with either of ion species. Friction measurements with reciprocal sliding show that a life-time of decreased friction coefficient depends on implanted ion species, Cr concentrations and acceleration energies. For B+- implantation, the lower the chromium contents are, the longer a decreased friction coefficient lasts. Meanwhile, the friction reduced by nitrogen implantation lasts longer for higher chromium content substrates. Dependence of friction coefficient on an acceleration energy is discussed for B+-implantation.

Modification of Sol-Gel Thin Films By Ion Implantation

1994 ◽  
Vol 346 ◽  
Author(s):  
Hiroshi Hirashima ◽  
Kenji Adachi ◽  
Hiroaki Imai
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Ion Implantation ◽  
Sol Gel ◽  
The Other ◽  
Ir Absorption ◽  
Absorption Bands ◽  
Chemically Modified ◽  
Sol Gel Films ◽  
Ion Species

ABSTRACTIn order to densify and to improve the physical properties, TiO2 sol-gel films, about 100 nm in thickness, on silica glass or silicon wafer were implanted with Ar+ or B+ ions. The refractive index of the as-dried films increased and the IR absorption band of OH disappeared after Ar+ implantation. Drying and densification of sol-gel films were enhanced by Ar+ implantation. On the other hand, the refractive index and the thickness of the films hardly changed with B+ implantation. However, IR absorption bands of B-O bond were observed after B+ implantation. This suggests that sol-gel films could be chemically modified by ion implantation with reactive ion species.

Ion Beam Modification of Carbon Materials

2005 ◽  
Vol 107 ◽  
pp. 107-110
Author(s):  
Masaya Iwaki
Keyword(s):  
Electrical Conductivity ◽  
Wear Resistance ◽  
Cell Adhesion ◽  
Ion Implantation ◽  
Electrochemical Properties ◽  
Surface Properties ◽  
Carbon Materials ◽  
Ion Beam ◽  
Ion Beam Modification ◽  
Ion Species

A study has been made of surface properties of carbon materials modified by ion beams. Substrates used were natural diamonds, glass-like carbon plates and polymer sheets. Ion species were chemically-active elements such as C, N and O, inert gas elements such as He, Ne and Ar, and metallic elements such as Cr and Ti. It was found that diamond becomes electrically conductive in ion implanted layers, which are amorphous or graphite-like structures. Electrical conductivity depends on implanted species, doses and target temperatures. It was found that glass-like carbon consisting of graphite and disordered graphite becomes amorphous due to ion beam bombardment. Amorphization causes the wear resistance to improve. The electrochemical properties changes depending on implanted species. The wear resistance and electrochemical properties depended on the target temperature during ion implantation. Ion beam bombardment to polymers has been carried out to control the electrical conductivity, cell adhesion and bio-compatibility. The electrical conductivity of polyimide films increases as the dose increases. The saturated sheet resistivity of implanted layers depends on ion species, dose and dose rate. It was found that the cell adhesion can be controlled by ion beam bombardment. The results were used in the fields of clinical examinations. In summary, ion beam bombardment to carbon materials is useful to control the carbon structures and surface properties depending on ion implantation conditions.

Nanomechanical properties of energetically treated polyethylene surfaces

2002 ◽  
Vol 17 (2) ◽  
pp. 423-430 ◽  
Author(s):  
C. Klapperich ◽  
L. Pruitt ◽  
K. Komvopoulos
Keyword(s):  
Mechanical Properties ◽  
Low Temperature ◽  
Ion Implantation ◽  
Ion Beam ◽  
Plasma Modification ◽  
High Dose ◽  
Oxygen Ion ◽  
Ion Beam Treatment ◽  
Argon Ion ◽  
Oxygen Ion Implantation

The effects of energetic treatments, crosslinking, and plasma modification on the surface mechanical properties and deformation behavior of ultrahigh molecular weight polyethylene (UHMWPE) were examined in light of nanoindentation experiments performed with a surface force microscope. Samples of UHMWPE were subjected to relatively high-dose gamma irradiation, oxygen ion implantation, and argon ion beam treatment. A range of crosslinking was achieved by varying the radiation dose. In addition, low-temperature plasma treatment with hexamethyldisiloxane/O2 and C3F6 was investigated for comparison. The surface mechanical properties of the treated UHMWPE samples are compared with those of untreated UHMWPE samples used as controls. Surface adhesion measurements obtained from the nanoindentation material responses are also discussed in terms of important treatment parameters. Results demonstrate that high-dose oxygen ion implantation, argon ion beam treatment, and low-temperature C3F6 plasma modification are effective treatments for enhancing the surface mechanical properties of UHMWPE.

New Ion Probe for Next Generation FIB, SIMS, and Nano-Ion Implantation

2009 ◽  
Vol 17 (5) ◽  
pp. 18-23 ◽  
Author(s):  
N. S. Smith ◽  
P. P. Tesch ◽  
N. P. Martin ◽  
R. W. Boswell
Keyword(s):  
Ion Implantation ◽  
High Performance ◽  
Ion Beam ◽  
Ion Source ◽  
Next Generation ◽  
Ion Probe ◽  
Scientists And Engineers ◽  
Beam Currents ◽  
Focused Beams ◽  
Ion Species

HyperionTM is a newly developed high-performance ion source that significantly advances the capabilities of many ion beam techniques used by material scientists and engineers. Hyperion has been developed to provide focused beams as small as 10 nm, beam currents up to several micro-Amps, and a broad range of ion species that include He+, O2+, Xe+ and H3+.

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