Exciton-mediated excitation of Er3+ in Erbium-doped silicon rich silicon oxide

2000 ◽  
Vol 638 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin
Keyword(s):  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Time Resolved ◽  
Modeling And Analysis ◽  
Visible Luminescence ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Er Doped

AbstractExciton-mediated excitation of Er3+ in erbium doped silicon rich silicon oxide (SRSO) is investigated. Er-doped SRSO films were fabricated by electron cyclotron-resonance plasmaenhanced chemical vapor deposition of Er-doped SiOx (x < 2) using SiH4 and O2 as source gases and co-sputtering of Er, followed by an anneal at 950 °C. Very weak visible luminescence from Si nanocluster relative to Er3+ luminescence were observed, indicating a very efficient excitation of Er3+ ions by Si nanoclusters. From detailed modeling and analysis of time-resolved Er3+ luminescence as the excitation duration and excitation power, we conclude that exciton-erbium coupling is dominant over exciton-nanocluster. The results are consistent with the proposal that the luminescent Er3+ ions are located predominantly in the SiO2 layer.

Waveguiding and 1.54 μm Er3+ Photoluminescence Properties of Erbium Doped Silicon Rich Silicon Oxide

1999 ◽  
Vol 597 ◽  
Author(s):  
Se-Young Seo ◽  
Hak-Seung Han ◽  
Jung H. Shin
Keyword(s):  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Excitation Mechanisms ◽  
Si Content ◽  
Er Doped ◽  
Resonance Plasma ◽  
Nanocrystalline Si

AbstractThe waveguiding and 1.54 μm Er3+ photoluminescent properties of Er doped silicon-rich silicon oxide (SRSO) are investigated. Erbium-doped SRSO films, which consist of nanocrystalline Si clusters embedded inside Si0 2 matrix, were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 and O2 with concurrent sputtering of erbium. The excess Si content of the SRSO films ranged from 0 to 10 at. %, and Er content ranged from 0.01 to 0.3 at. %. After deposition, films were rapid thermal annealed at temperatures between 750 and 1150°C for durations ranging from 2 to 20 min. to precipitate silicon nanoclusters. All films show strong room temperature 1.54 μm Er3+ photoluminescence. The luminescence lifetimes that can be > 6 msec. The refractive indices of the SRSO films range from 1.48 to 2.47, increasing with increasing excess Si content. Thus, waveguides can be formed easily by depositing erbium doped SRSO films on 1 μm thick SiO2 films. Furthermore, carrier-induced de-excitation mechanisms of excited erbium atoms in SRSO are nearly completely suppressed in such SRSO films, indicating that population inversion of Er3+ ions by carrier-mediated excitation is possible.

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

The Nd-nanocluster Coupling Strength and its Effect in Excitation/de-excitation of Nd3+ Luminescence in Nd-doped Silicon-rich Silicon Oxide

2003 ◽  
Vol 770 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin
Keyword(s):  
Coupling Strength ◽  
Cyclotron Resonance ◽  
Transfer Rate ◽  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Temperature Quenching ◽  
Doped Silicon ◽  
Back Transfer ◽  
Resonance Plasma

AbstractThe Nd-nanocluster Si (nc-Si) coupling strength and its effect in excitation/de-excitation of Nd3+ luminescence in Nd-doped silicon-rich silicon oxide (SRSO) is investigated. Nd-doped SRSO thin films, which consist of nc-Si embedded inside a SiO2 matrix, were prepared by electron-cyclotron-resonance plasma enhanced chemical vapor deposition (ECR-PECVD) of SiH4 and O2 with co-sputtering of Nd and subsequent anneal at 950 °C. Efficient Nd3+ luminescence with moderate temperature quenching is observed. Based on the temperature dependence of Nd3+ luminescence lifetime, a coupling strength between nc-Si and Nd that is strong enough to result in efficient excitation of Nd3+ via quantum confined excitons while weak enough to result in a small back-transfer rate is identified as the key to Nd3+ luminescence.

Er3+Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited by Laser Ablation of a Si:Er Target in an Oxygen Atmosphere

2004 ◽  
Vol 43 (4A) ◽  
pp. 1541-1544 ◽  
Author(s):  
Jeong Sook Ha ◽  
Young Rae Jang ◽  
Keon Ho Yoo ◽  
Chang Hyun Bae ◽  
Sang Hwan Nam ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Oxygen Atmosphere ◽  
Doped Silicon ◽  
Er Doped

Reliability of Electrodeposited Copper and Ecrcvd Siof Films for Multilevel Metallization

1999 ◽  
Vol 565 ◽  
Author(s):  
Seoghyeong Lee ◽  
Yong-An Kim ◽  
Kyoung-Woo Lee ◽  
Seil Sohn ◽  
Young-Il Kim ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Multilayer Structure ◽  
Silicon Oxide ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Vacuum Furnace ◽  
Electrical Stability ◽  
Metal Interconnects ◽  
The Stability ◽  
Interconnect System

AbstractThe effect of a post plasma treatment on the dielectric properties and reliability of fluorine doped silicon oxide (SiOF) films deposited by electron cyclotron resonance chemical vapor deposition (ECRCVD) was studied. Also, the thermal stability of an electrodeposited Cu / sputtered Ta interconnect system with SiOF intermetal dielectrics was examined by annealing in a vacuum furnace. The stability of the dielectric constant of SiOF films was improved by O2 post plasma treatment. Surface modification by the plasma treatment was effective in prevention of water absorption. The Cu/Ta/SiOF/Si system was thermally stable at least up to 500°C for 3h. For the Cu/Ta/SiOF/Si multilayer structure, the plasma treatment seemed to play a big role in suppressing the interdiffusion between SiOF and metal interconnects. By C-V measurement, the electrical stability of the Cu/Ta/SiOF/Si multilayer structure was found to be stable up to 500°C for 2 h.

Luminescence of Er-doped silicon oxide–zirconia thin films

2009 ◽  
Vol 129 (7) ◽  
pp. 696-703 ◽  
Author(s):  
Carlos Rozo ◽  
Luis F. Fonseca ◽  
Daniel Jaque ◽  
José García Solé
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Doped Silicon ◽  
Er Doped

Room-temperature 1.54 μm electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n+-Si substrates by magnetron sputtering

2001 ◽  
Vol 90 (11) ◽  
pp. 5835-5837 ◽  
Author(s):  
G. Z. Ran ◽  
Y. Chen ◽  
W. C. Qin ◽  
J. S. Fu ◽  
Z. C. Ma ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Si Substrates ◽  
Doped Silicon ◽  
Er Doped
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