3D Chemical Characterization of Micron-Sized Coal Fly Ash Particles

1985 ◽  
Vol 65 ◽  
Author(s):  
Richard W. Linton ◽  
Scott R. Bryan ◽  
X. B. Cox ◽  
Dieter P. Griffis

The surface layers on coal fly ash particles are of special environmental interest in that concentration enrichments of trace elements may occur [1], thereby enhancing the potential bioavailability of toxic species. Little research, however, has been devoted to the analytical characterization of intraparticle and interparticle distributions of trace elements. The high detection sensitivity, spatial resolution, and depth profiling capabilities of secondary ion mass spectrometry (SIMS), coupled to digital image acquisition and processing [2], permit three-dimensional (3D) compositional maps for collections of individual micron-sized particles. The 3D analysis of trace element distributions in coal fly ash particles is the subject of this SIMS investigation

1989 ◽  
Vol 33 ◽  
pp. 673-678
Author(s):  
Sz. Török ◽  
Sz. Sándor ◽  
H. Rausch

The assessment of the potential environmental and toxicological effects of particulate material emitted to the atmosphere requires detailed physical and chemical characterization of the particles. One of the most widely studied types of pollutant particles is coal fly ash as a byproduct of coal combustion. These particles are inhomogeneous, highly variable, span a broad range of sizes and have diverse morphologies.It has been shown that numerous toxic trace elements tend to increase in bulk concentrations with decreasing particle size (1).


1988 ◽  
Vol 96 (1-6) ◽  
pp. 41-56 ◽  
Author(s):  
Kiichiro Mukai ◽  
Tadashi Kikuchi ◽  
Keiichi Furuya

Author(s):  
S.F. Corcoran

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.


2021 ◽  
Vol 170 ◽  
pp. 302-314
Author(s):  
Adeyinka S. Yusuff ◽  
Aman K. Bhonsle ◽  
Jayati Trivedi ◽  
Dinesh P. Bangwal ◽  
Lok P. Singh ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document