The Properties of Low Hydrogen Silicon Thin Films Deposited by Mesh-type PECVD

2001 ◽  
Vol 664 ◽  
Author(s):  
Se-Won Ryu ◽  
Do-Hyun Kwon ◽  
Sung-Gye Park ◽  
Hyoung-June Kim
Keyword(s):  
Deposition Rate ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Laser Melting ◽  
Current Ratio ◽  
Silicon Thin Films ◽  
Dc Bias ◽  
Si Films ◽  
Si Thin Film

ABSTRACTWe propose a mesh-type PECVD to minimize the hydrogen concentration in this study. Since in this system deposition rate is very slow, so for increasing a deposition rate, we suggest an applied DC bias enhanced sputtering process. We investigated several conditions to compare with conventional PECVD. Excimer-laser melting and regrowth of thin a-Si films is for fabricating polycrystalline-Si (poly-Si). Furthermore, we fabricate poly-Si thin-film transistor(TFTs) and measure threshold voltage (V), field-effect mobility (cm2 /Vs) and on/off current ratio

Effect Of O2 Plasma Exposure On The Performance Of Polycrystalline Silicon Thin Film Transistors

1994 ◽  
Vol 345 ◽  
Author(s):  
Chul Ha Kim ◽  
Il Lee ◽  
Ki Soo Sohn ◽  
Su Chul Chun ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Plasma Exposure ◽  
Silicon Thin Film ◽  
Current Ratio ◽  
Si Thin Film ◽  
O2 Plasma

AbstractWe have studied the effect of O2 plasma exposure on the performance of polycrystalline silicon (poly-Si) thin film transistor (TFTs). The field effect mobility is increased and the drain currents at negative gate voltages are reduced by O2 plasma exposure on the surface of the TFT. These improvements in the performance of the poly-Si TFTs are larger in offset structure compared to overlap one. We obtained the on/off current ratio of ∼ 108 after O2 plasma exposure for the poly-Si TFTs with 3 or 4 μm offset length.

Amorphous Silicon Thin Film Transistors Produced by Atmospheric Pressure CVD

1992 ◽  
Vol 284 ◽  
Author(s):  
Byung Chul Ann ◽  
Jeong Hyun Kim ◽  
Chan Hee Hong ◽  
Woo Yeol Kim ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Deposition Rate ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Total Pressure ◽  
Field Effect ◽  
Gate Insulator ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Current Ratio ◽  
Very High

ABSTRACTWe have studied the preparation and device application of a-Si by atmospheric pressure CVD using disilane. The deposition rate of a-Si increases with the partial pressure of disilane and with the total pressure. The deposition rate of APCVD a-Si is, therefore, very high compared with LPCVD. The photosensitivity of APCVD a-Si is 104 at 100mW/cm2. We have made an inverse staggered type a-Si TFT using SiO2 as a gate insulator. The on/off current ratio and field effect mobility are 105 and 0.19cm2/Vs, respectively.

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

1993 ◽  
Vol 297 ◽  
Author(s):  
Byung Chul Ahn ◽  
Jeong Hyun Kim ◽  
Dong Gil Kim ◽  
Byeong Yeon Moon ◽  
Kwang Nam Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Hydrogenation Effect

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

Instability of OTFT with Organic Gate Dielectrics

2007 ◽  
Vol 124-126 ◽  
pp. 407-410
Author(s):  
Sang Chul Lim ◽  
Seong Hyun Kim ◽  
Gi Heon Kim ◽  
Jae Bon Koo ◽  
Jung Hun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Gate Insulator ◽  
Semiconductor Layer ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Dielectric Thickness ◽  
Inverter Circuit

We report the effects of instability with gate dielectrics of pentacene thin film transistors (OTFTs) inverter circuits. We used to the UV sensitive curable resin and poly-4-vinylphenol(PVP) by gate dielectrics. The inverter supply bias is VDD= -40 V. For a given dielectric thickness and applied voltage, pentacene OTFTs with inverter circuits measurements field effect mobility, on-off current ratio, Vth. The field effect mobility 0.03~0.07 cm2/Vs, and the threshold voltage is -3.3 V ~ -8.8 V. The on- and off-state currents ratio is about 103~106. From the OTFT device and inverter circuit measurement, we observed hysteresis behavior was caused by interface states of between the gate insulator and the pentacene semiconductor layer.

The Mobility Lifetime Product of Electrons as a Function of Temperature and Electron Concentrations in a-Si:H

1994 ◽  
Vol 336 ◽  
Author(s):  
Shinichi Nishida ◽  
Hellmut Fritzsche
Keyword(s):  
Cross Sections ◽  
Field Effect ◽  
Thin Film Transistor ◽  
State Density ◽  
Drift Diffusion ◽  
Full Account ◽  
Localization Radius ◽  
Fitting Parameters ◽  
Si Thin Film ◽  
Capture Cross Sections

ABSTRACTThe photo-field effect has been measured between 4.2K and 300K using an a-Si thin film transistor. The data are fit self-consistently taking full account of changes in space charge, photo carrier drift, diffusion and recombination. Gap state density and capture cross sections are fitting parameters. Evidence for tunnel recombination is found. Electron localization radius was found to be 13Å.

Thin Film Transistors on Plastic Substrates Using Silicon Deposited by Microwave ECR-CVD

2003 ◽  
Vol 769 ◽  
Author(s):  
Lihong Teng ◽  
Wayne A. Anderson
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Silicon Films ◽  
Subthreshold Swing ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Saturation Field ◽  
Plastic Substrates

AbstractThe properties of thin film transistors (TFT's) on plastic substrates with active silicon films deposited by microwave ECR-CVD were studied. Two types of plastic were used, PEEK and polyimide. The a-Si:H TFT deposited at 200°C on polyimide substrates showed a saturation field effect mobility of 4.5 cm2/V-s, a threshold voltage of 3.7 V, a subthreshold swing of 0.69 V/dec and an ON/OFF current ratio of 7.9×106, while the TFT fabricated on PEEK at 200°C showed a saturation field effect mobility of 3.9 cm2/V-s, a threshold voltage of 4.1 V, a subthreshold swing of 0.73 V/dec and an ON/OFF current ratio of 4×106. Comparison is made to TFT's with the Si deposited at 400°C on glass.

Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS2) Electrolyte Gated Thin-Film Transistor

MRS Advances ◽  
2018 ◽  
Vol 3 (27) ◽  
pp. 1525-1533 ◽  
Author(s):  
Eleonora Macchia ◽  
Alla Zak ◽  
Rosaria Anna Picca ◽  
Kyriaki Manoli ◽  
Cinzia Di Franco ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Fold Increase ◽  
Field Effect Mobility ◽  
Figures Of Merit ◽  
Electronic Channel ◽  
Improved Performance ◽  
P Type

ABSTRACTThis work decribes the enhancement of the electrical figures of merit of an Electrolyte Gated Thin-Film Transistor (EG-TFT) comprising a nanocomposite of n-type tungsten disulfide (WS2) nanotubes (NTs) dispersed in a regio-regular p-type poly(3-hexylthiophene-2,5-diyl) (P3HT) polymeric matrix. P3HT/WS2 nanocomposites loaded with different concentrations of NTs, serving as EG-TFTs electronic channel materials have been studied and the formulation has been optimized. The resulting EG-TFTs figures of merit (field-effect mobility, threshold voltage and on-off ratio) are compared with those of the device comprising a bare P3HT semiconducting layer. The optimized P3HT/WS2 nanocomposite, comprising a 60% by weight of NTs, results in an improvement of all the elicited figures of merit with a striking ten-fold increase in the field-effect mobility and the on/off ratio along with a sizable enhancement of the in-water operational stability of the device.

A New Annealing Method to Obtain High Quality Poly-Si

1992 ◽  
Vol 283 ◽  
Author(s):  
Yoon-Ho Song ◽  
Jong-Tae Baek ◽  
Kee-Soo Nam ◽  
Sang-Won Kang
Keyword(s):  
Field Effect ◽  
Field Effect Mobility ◽  
High Quality ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Good Uniformity ◽  
Conventional Furnace Annealing ◽  
Annealing Method ◽  
Si Thin Film ◽  
Free Nucleus

ABSTRACTA new annealing method, a combination of rapid thermal annealing (RTA) and furnace annealing, has been developed to obtain a high quality poly-Si from a-Si deposited by LPCVD. This method produces a large grain poly-Si with good uniformity, which may result from the growth of relatively defect-free nucleus generated at a high temperature by RTA. Poly-Si thin film transistors fabricated by this new annealing method have higher field effect mobility and better uniformity compared with those by the conventional furnace annealing.

Sign in / Sign up

Export Citation Format

Share Document