A New Annealing Method to Obtain High Quality Poly-Si
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ABSTRACTA new annealing method, a combination of rapid thermal annealing (RTA) and furnace annealing, has been developed to obtain a high quality poly-Si from a-Si deposited by LPCVD. This method produces a large grain poly-Si with good uniformity, which may result from the growth of relatively defect-free nucleus generated at a high temperature by RTA. Poly-Si thin film transistors fabricated by this new annealing method have higher field effect mobility and better uniformity compared with those by the conventional furnace annealing.
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2010 ◽
Vol 44-47
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pp. 4154-4156
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2018 ◽
Vol 924
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pp. 457-460
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2007 ◽
Vol 46
(11)
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pp. 7204-7207
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