Palladium and Aluminum Gate Metals/Aluminum Nitride/Silicon Balanced Capacitors for Selective Hydrogen Sensing

2001 ◽  
Vol 693 ◽  
Author(s):  
H. E. Prakasam ◽  
F. Serina ◽  
C. Huang ◽  
G. W. Auner ◽  
L. Rimai ◽  
...  
Keyword(s):  
Practical Importance ◽  
Plasma Source ◽  
Hydrocarbon Gases ◽  
Metal Insulator ◽  
Hydrogen Sensing ◽  
Material Sources ◽  
Sensor Structure ◽  
Electrical Component ◽  
Clear Shift ◽  
Mis Devices

AbstractAn alternate array of Pd/AlN/Si and Al/AlN/Si metal-insulator-semiconductor (MIS) devices has been developed using plasma source molecular beam epitaxy (PSMBE) method for deposition of AlN on Si and magnetron sputtering for deposition of Pd and Al electrodes (via mask) on AlN. Both devices show essentially identical capacitance (C) versus voltage (V) characteristics of the typical MIS capacitor. However, the C-V characteristic of a Pd-device shows a clear shift in the presence hydrogen, while that of an Al-device shows no shift. These sensors were characterized using C(V) and C(time) measurements under varying hydrogen concentration. The effects of oxygen and hydrocarbon gases on the sensors were also studied. The Pd-device responds selectively to hydrogen. These results suggest the possibility of fabricating a balanced sensor structure, which might have significant practical importance, as it would cancel all thermal and material sources of drift in the electrical component of the sensor response.

Pd/AlN/Si or SiC Structure for Hydrogen Sensing Device

2000 ◽  
Vol 622 ◽  
Author(s):  
Flaminia Serina ◽  
C. Huang ◽  
G. W. Auner ◽  
R. Naik ◽  
S. Ng ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Hydrogen Sensor ◽  
Plasma Source ◽  
Metal Electrode ◽  
Pressure Effects ◽  
Mis Structure ◽  
Hydrocarbon Gases ◽  
Hydrogen Sensing ◽  
Design Structure ◽  
Aln Film

ABSTRACTAn AlN (insulator) MIS Hydrogen Sensor was created using plasma source molecular beam epitaxy (PSMBE) deposition on Si (111) and 6H-SiC. A Pd layer was deposited on top of the AlN film via magnetron sputtering technique utilizing a hard mask. Pd was chosen since H2 readily diffuses within its bulk, thus Pd acts not only as a metal electrode of the MIS structure, but also as a catalyst for hydrogen dissociation. To optimize the design structure several sensors with different AlN and Pd thickness have been developed. RHEED and XRD measurements show that AlN film is epitaxial on both Si (111) and 6H-SiC substrates. The sensors were characterized using capacitance versus voltage C(V) and I(V) measurements, at different frequencies ranging from 1kHz to 1 MHz. Shifts in the C-V and I-V curves occurred with the introduction of hydrogen in the chamber. The temperature, hydrogen partial pressure, effects of oxygen and hydrocarbon gases, insulator and metal thicknesses on sensor response were analyzed.

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

Hydrogen Sensing Mechanisms of Metal−Insulator Interfaces

1998 ◽  
Vol 31 (5) ◽  
pp. 249-256 ◽  
Author(s):  
Lars-Gunnar Ekedahl ◽  
Mats Eriksson ◽  
Ingemar Lundström
Keyword(s):  
Metal Insulator ◽  
Hydrogen Sensing

Hydrogen sensing performances of Pt/i-ZnO/GaN metal–insulator–semiconductor diodes

2011 ◽  
Vol 157 (2) ◽  
pp. 460-465 ◽  
Author(s):  
Hsin-Ying Lee ◽  
Hung-Lin Huang ◽  
Ching-Ting Lee
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Hydrogen Sensing

Rectifying Behavior and Light Emission from Nickel Oxide MIS Structures

MRS Advances ◽  
2016 ◽  
Vol 1 (49) ◽  
pp. 3341-3347 ◽  
Author(s):  
Kamruzzaman Khan ◽  
Srikanth Itapu ◽  
Daniel G. Georgiev
Keyword(s):  
Carrier Transport ◽  
Reverse Bias ◽  
Light Emission ◽  
Mis Structure ◽  
Metal Insulator ◽  
Turn On ◽  
Current Voltage ◽  
Critical Turn ◽  
Mis Devices ◽  
Mis Structures

ABSTRACTWe have demonstrated the NiO/ZnO based rectifying diode for LED application for substituting GaN for optoelectronics applications. We have systematically studied the current-voltage (I-V) characteristics of NiO based Metal-Insulator-Semiconductor (MIS) devices under forward and reverse bias for its use in LED applications. The results obtained show that the current increases exponentially with the voltage after a critical turn-on-voltage. The mechanism of carrier transport responsible for the rectifying behavior of the MIS structure as well as the light emission is discussed in relation to the experimental results.

scholarly journals Pd-Sensitized Single Vanadium Oxide Nanowires: Highly Responsive Hydrogen Sensing Based on the Metal−Insulator Transition

Nano Letters ◽  
2009 ◽  
Vol 9 (12) ◽  
pp. 3980-3984 ◽  
Author(s):  
Jeong Min Baik ◽  
Myung Hwa Kim ◽  
Christopher Larson ◽  
Cafer T. Yavuz ◽  
Galen D. Stucky ◽  
...  
Keyword(s):  
Vanadium Oxide ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Oxide Nanowires ◽  
Hydrogen Sensing

scholarly journals Модуляция заряда германиевых МДП-структур с фторсодержащими диэлектриками

2018 ◽  
Vol 52 (8) ◽  
pp. 939
Author(s):  
М.Б. Шалимова
Keyword(s):  
Rare Earth ◽  
Earth Element ◽  
Negative Charge ◽  
Positive Charge ◽  
Surface States ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Semiconductor Structures ◽  
Mis Devices ◽  
Mis Structures

AbstractAn insulator layer of ErF_3, YF_3, NdF_3, and TmF_3 was formed in n -type Ge-based MIS (metal–insulator–semiconductor) structures. It is shown that no negative effective charge is observed in these Ge MIS structures, while the degradation of electric characteristics and the rise of density of surface states leads to an increase in the positive charge. The positive charge formed at the Ge–rare-earth-element fluoride interface can compensate the negative charge of dangling bonds on the surface of Ge, which is potentially promising for modulation of the charge magnitude and sign in MIS devices based on Ge.

Switching in Polymer Memory Devices Based on Polymer and Nanoparticles Admixture

2014 ◽  
Vol 95 ◽  
pp. 107-112
Author(s):  
Z.H. Alhalafi ◽  
Shashi Paul
Keyword(s):  
Electrical Conductivity ◽  
Metal Oxides ◽  
Memory Device ◽  
Memory Devices ◽  
Back Contact ◽  
Metal Insulator ◽  
Non Volatile Memory ◽  
Display Memory ◽  
Mis Devices ◽  
Polymer Memory

In this paper, a non-volatile memory device based on a blend of metal oxides (Known as NiO) and polymer has been investigated. These devices have shown to display memory effects; a marked difference in electrical conductivity between the ‘on’ and ‘off’ states. However, the exact mechanism under-pinning these two conductivities states are not very clear. The structures used in investigation are metal-admixture-metal (MAM) and metal-insulator-semiconductor (MIS) devices. Also, glass and p-types silicon (100 orientations) with a pre-prepared Ohmic back contact were used for the MAM and MIS substrates respectively. This work will address some of the questions in regard to the electrical bistability shown by polymer memory devices.

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