Rectifying Behavior and Light Emission from Nickel Oxide MIS Structures

MRS Advances ◽  
2016 ◽  
Vol 1 (49) ◽  
pp. 3341-3347 ◽  
Author(s):  
Kamruzzaman Khan ◽  
Srikanth Itapu ◽  
Daniel G. Georgiev
Keyword(s):  
Carrier Transport ◽  
Reverse Bias ◽  
Light Emission ◽  
Mis Structure ◽  
Metal Insulator ◽  
Turn On ◽  
Current Voltage ◽  
Critical Turn ◽  
Mis Devices ◽  
Mis Structures

ABSTRACTWe have demonstrated the NiO/ZnO based rectifying diode for LED application for substituting GaN for optoelectronics applications. We have systematically studied the current-voltage (I-V) characteristics of NiO based Metal-Insulator-Semiconductor (MIS) devices under forward and reverse bias for its use in LED applications. The results obtained show that the current increases exponentially with the voltage after a critical turn-on-voltage. The mechanism of carrier transport responsible for the rectifying behavior of the MIS structure as well as the light emission is discussed in relation to the experimental results.

scholarly journals Blue Electroluminescence in SRO-HFCVD Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 943
Author(s):  
Haydee P. Martínez ◽  
José A. Luna ◽  
Roberto Morales ◽  
José F. Casco ◽  
José A. D. Hernández ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Carrier Transport ◽  
Light Emission ◽  
Chemical Vapor ◽  
Metal Insulator ◽  
Conduction Mechanisms ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Hot Filament ◽  
Quartz Substrates

In this work, electroluminescence in Metal-Insulator-Semiconductors (MIS) and Metal-Insulator-Metal (MIM)-type structures was studied. These structures were fabricated with single- and double-layer silicon-rich-oxide (SRO) films by means of Hot Filament Chemical Vapor Deposition (HFCVD), gold and indium tin oxide (ITO) were used on silicon and quartz substrates as a back and front contact, respectively. The thickness, refractive indices, and excess silicon of the SRO films were analyzed. The behavior of the MIS and MIM-type structures and the effects of the pristine current-voltage (I-V) curves with high and low conduction states are presented. The structures exhibit different conduction mechanisms as the Ohmic, Poole–Frenkel, Fowler–Nordheim, and Hopping that contribute to carrier transport in the SRO films. These conduction mechanisms are related to the electroluminescence spectra obtained from the MIS and MIM-like structures with SRO films. The electroluminescence present in these structures has shown bright dots in the low current of 36 uA with a voltage of −20 V to −50 V. However, when applied voltages greater than −67 V with 270 uA, a full area with uniform blue light emission is shown.

Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O

2006 ◽  
Vol 527-529 ◽  
pp. 1083-1086 ◽  
Author(s):  
Jeong Hyun Moon ◽  
Da Il Eom ◽  
Sang Yong No ◽  
Ho Keun Song ◽  
Jeong Hyuk Yim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Interfacial Layer ◽  
Atomic Layer ◽  
Mis Structure ◽  
Al2o3 Layer ◽  
Metal Insulator ◽  
Layer Deposition ◽  
Mis Structures

The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC were examined using metal-insulator-semiconductor (MIS) structures of Pt/La2O3(18nm)/4H-SiC and Pt/Al2O3(10nm)/La2O3(5nm)/4H-SiC. For the Pt/La2O3(18nm)/4H-SiC structure, even though the leakage current density was slightly reduced after the rapid thermal annealing at 500 oC, accumulation capacitance was gradually increased with increasing bias voltage due to a high leakage current. On the other hand, since the leakage current in the accumulation regime was decreased for the Pt/Al2O3/La2O3/4H-SiC MIS structure owing to the capped Al2O3 layer, the capacitance was saturated. But the saturation capacitance was strongly dependent on frequency, indicating a leaky interfacial layer formed between the La2O3 and SiC during the fabrication process of Pt/Al2O3(10nm)/ La2O3(5nm)/ 4H-SiC structure.

Temperature Variation Effects on Current-Voltage (i-v) Characteristics of n-GaN Schottky Diode

2006 ◽  
Vol 517 ◽  
pp. 141-146
Author(s):  
Tarriq Munir ◽  
Azlan Abdul Aziz ◽  
Mat Johar Abdullah ◽  
Naser Mahmoud Ahmed
Keyword(s):  
Low Temperature ◽  
Carrier Concentration ◽  
Temperature Variation ◽  
Schottky Diode ◽  
Reverse Bias ◽  
Pt Electrode ◽  
Turn On ◽  
Bandgap Narrowing ◽  
Current Voltage ◽  
Higher Temperature

We focus in this paper the temperature variation effects on the current – voltage ( I-V) characteristics of n-GaN schottky diode. The diode was doped with carrier concentration 1*1013cm-3 and Pt electrode was used. The simulated current were obtained at temperatures from 50K to 500K and voltage up to 2Volt. We use the Srh (Schokley read hall), Cvt (Lombardi Model), Auger (Auger), Fermi (Fermi Dirac), Impact, Bgn (Bandgap Narrowing), Complete ioniz model to get the schottky rectifying current – voltage (I-V) characteristics.. We find that by increasing the temperature from 50K to 500K, the forward schottky rectifying current decreases from 2.7187 Amp to 0.383 Amp. while the forward turn – on voltage decreases. In reverse bias at low temperature the current is high and we increase the temperature the current decreases. The breakdown voltage decreases at higher temperature.

The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1571-1574 ◽  
Author(s):  
Cole W. Litton ◽  
Ya.I. Alivov ◽  
D. Johnstone ◽  
Ümit Özgür ◽  
V. Avrutin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Zno Films ◽  
Turn On ◽  
Forward Current ◽  
Current Voltage ◽  
Potential Applications ◽  
Current Voltage Characteristics ◽  
P Type

Heteroepitaxial n-ZnO films have been grown on commercial p-type 6H-SiC substrates by plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures have been fabricated and their photoresponse properties have been studied. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2 x 10-4 A/cm2 at -10 V, a breakdown voltage greater than 20 V, a forward turn on voltage of ∼5 V, and a forward current of ∼2 A/cm2 at 8 V. Photosensitivity of the diodes, when illuminated from ZnO side, was studied at room temperature and photoresponsivity of as high as 0.045 A/W at -7.5 V reverse bias was observed for photon energies higher than 3.0 eV.

scholarly journals Модуляция заряда германиевых МДП-структур с фторсодержащими диэлектриками

2018 ◽  
Vol 52 (8) ◽  
pp. 939
Author(s):  
М.Б. Шалимова
Keyword(s):  
Rare Earth ◽  
Earth Element ◽  
Negative Charge ◽  
Positive Charge ◽  
Surface States ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Semiconductor Structures ◽  
Mis Devices ◽  
Mis Structures

AbstractAn insulator layer of ErF_3, YF_3, NdF_3, and TmF_3 was formed in n -type Ge-based MIS (metal–insulator–semiconductor) structures. It is shown that no negative effective charge is observed in these Ge MIS structures, while the degradation of electric characteristics and the rise of density of surface states leads to an increase in the positive charge. The positive charge formed at the Ge–rare-earth-element fluoride interface can compensate the negative charge of dangling bonds on the surface of Ge, which is potentially promising for modulation of the charge magnitude and sign in MIS devices based on Ge.

Reduction of Dark Current Under Reverse Bias in a-Si:H p-i-n Photodetectors

2002 ◽  
Vol 715 ◽  
Author(s):  
S. Morrison ◽  
P. Servati ◽  
Y. Vygranenko ◽  
A. Nathan ◽  
A. Madan
Keyword(s):  
Vapor Deposition ◽  
Dark Current ◽  
Carrier Transport ◽  
Reverse Bias ◽  
Structure Optimization ◽  
Chemical Vapor ◽  
Dark Current Density ◽  
Diode Ideality Factor ◽  
Current Voltage ◽  
Current Voltage Characteristics

AbstractThis paper presents the development of low dark current amorphous silicon (a-Si:H) based heterojunction photodiodes. A series of p-i-n and n-i-p structures have been deposited by plasma-enhanced chemical vapor deposition (PECVD). Junction properties and carrier transport are investigated in terms of dark and light current-voltage characteristics, time dependence of the dark current, and spectral photoresponse measurements. It is demonstrated that a thin (∼4 nm) undoped a-SiC:H buffer layer introduced between the p and i layers reduces the leakage current and improves the diode ideality factor. A dark current density of ∼10 pA/cm2 at reverse bias of 1 V was achieved for the n-i-p structure. Optimization of device design for further improvement of dark current and photoresponse is discussed.

Comparison of MISLEDs Made on Si-rich SiOx and SiNx

2009 ◽  
Vol 1208 ◽  
Author(s):  
Chun-Chieh Chen ◽  
Cheng-Tao Lin ◽  
Yi-Hao Pai ◽  
Gong-Ru Lin
Keyword(s):  
Transport Mechanism ◽  
Carrier Transport ◽  
Deposition Time ◽  
Light Emission ◽  
Tunneling Current ◽  
Threshold Current ◽  
Tunneling Probability ◽  
Active Layer Thickness ◽  
Emission Efficiency ◽  
Turn On

AbstractWe compare the turn-on voltage, P-I, and EL responses between the MISLEDs made by Si-rich SiNx and SiOx films. Active layer thickness enlarged from 120 to 360 nm is achieved by lengthening deposition time from 10 to 30 min, which inevitably increases the forward turn-on voltage from 3 to 41 V. We observe that the forward turn-on voltage of SiNx based MISLED is only 10.43 V and that of SiOx based one is 69 V with the same film thickness of 100 nm. The tunneling-based carrier transport mechanism is dominated due to the exponential like V-I behavior, while the tunneling probability is strongly dependent on the height of the barriers between metal/dielectric and dielectric/nc-Si matrices. The P-I slope of SiNx and SiOx based MISLEDs are 1.6 and 115.2 mW/A, respectively. The SiNx MISLED reveals threshold current and voltage of only 4 A and 12 V due to lower barrier height of both ITO/SiNx and SiNx/nc-Si, whereas the threshold current and voltage of SiOx based MISLED are 400 A and 78 V, respectively. In comparison, the higher tunneling current through the SiNx MISLED fails to promote the larger external quantum efficiency of the MISLED, indicating that such lower barriers are not beneficial to the confinement of tunneling carriers and the enhancement of light-emission efficiency.

The New Historicism

2018 ◽  
Author(s):  
Marjorie Levinson
Keyword(s):  
Dialectical Materialism ◽  
The Other ◽  
New Historicism ◽  
Turn On ◽  
The World ◽  
Previous Decade ◽  
Critical Turn ◽  
The Relationship

Chapter 2 studies the relationship between historicism and Romanticism. It locates the two between Enlightenment materialism, on one side, and Marxian historical and dialectical materialism, on the other. In so doing, it isolates a paradox of materialism—namely, its production of the very concepts that undo it. These include the ideas of knowing as dissociated conceptual activity, and consciousness as absolute negativity. Romanticism and historicism, it is argued, represent solutions to a common problem—a claim defended through a reading of Wordsworth’s sonnet “The world is too much with us.” In considering how we position ourselves in relation to past literature, the chapter evaluates the choices between contemplation and empathy, knowledge and power, blame and defense. As such, it represents the first move in a self-critical turn on the new historicist method that had shaped the author’s—and part of the field’s—work in the previous decade.

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