Switching in Polymer Memory Devices Based on Polymer and Nanoparticles Admixture

2014 ◽  
Vol 95 ◽  
pp. 107-112
Author(s):  
Z.H. Alhalafi ◽  
Shashi Paul
Keyword(s):  
Electrical Conductivity ◽  
Metal Oxides ◽  
Memory Device ◽  
Memory Devices ◽  
Back Contact ◽  
Metal Insulator ◽  
Non Volatile Memory ◽  
Display Memory ◽  
Mis Devices ◽  
Polymer Memory

In this paper, a non-volatile memory device based on a blend of metal oxides (Known as NiO) and polymer has been investigated. These devices have shown to display memory effects; a marked difference in electrical conductivity between the ‘on’ and ‘off’ states. However, the exact mechanism under-pinning these two conductivities states are not very clear. The structures used in investigation are metal-admixture-metal (MAM) and metal-insulator-semiconductor (MIS) devices. Also, glass and p-types silicon (100 orientations) with a pre-prepared Ohmic back contact were used for the MAM and MIS substrates respectively. This work will address some of the questions in regard to the electrical bistability shown by polymer memory devices.

scholarly journals Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film

Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 182
Author(s):  
Iulia Salaoru ◽  
Christos Christodoulos Pantelidis
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Retention Time ◽  
Memory Device ◽  
Polystyrene Sulfonate ◽  
Physical Origin ◽  
Electrical Field ◽  
Bipolar Switching ◽  
Current Voltage ◽  
Non Volatile Memory

In this research, we investigate the memory behavior of poly(3,4 ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) cross bar structure memory cells. We demonstrate that Al/PEDOT:PSS/Al cells fabricated elements exhibit a bipolar switching and reproducible behavior via current–voltage, endurance, and retention time tests. We ascribe the physical origin of the bipolar switching to the change of the electrical conductivity of PEDOT:PSS due to electrical field induced dipolar reorientation.

Electrically Re-Writable Non-Volatile Memory Device - Using a Blend of Sea Salt and Polymer

2008 ◽  
Vol 54 ◽  
pp. 486-490 ◽  
Author(s):  
Iulia Salaoru ◽  
Shashi Paul
Keyword(s):  
Polyvinyl Acetate ◽  
Organic Molecules ◽  
Memory Device ◽  
Sea Salt ◽  
Nano Particles ◽  
Memory Devices ◽  
Current Voltage ◽  
Non Volatile Memory ◽  
Metal Organic ◽  
Charging Mechanism

Intensive research is currently underway to exploit the highly interesting properties of nano-sized particles and organic molecules for optical, electronic and other applications. Recently, it has been shown that nano-sized particles and small organic molecules embedded in polymer matrices can be used to realise memory devices. Such memory devices are simple to fabricate via the spin-on technique. This work presents an attempt to use sea salt, embedded in polyvinyl acetate, in the making of the memory devices. A polymer blend of polyvinyl acetate and sodium chloride (NaCl) was prepared in methanol and spin coated onto a glass substrate marked with thin Al tracks and a top contact was evaporated onto the blend after drying - this resulted in a metal-organic-metal (MOM) structure. The current-voltage (I-V) behaviour of MOM devices shows that the devices can be switched from a high conductivity state to a low conductivity state, by applying an external electric field - this property can be exploited to store data bits. The possible charging mechanism, based on the electric dipole formation, is presented in this work. Polymer blends of polyvinyl acetate with nano-particles of BaTiO3 are also investigated to further our understanding of charging mechanism(s).

Graphitic carbon nitride nanosheets for solution processed non-volatile memory devices

2019 ◽  
Vol 7 (33) ◽  
pp. 10203-10210 ◽  
Author(s):  
Ruopeng Wang ◽  
Huilin Li ◽  
Luhong Zhang ◽  
Yu-Jia Zeng ◽  
Ziyu Lv ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Memory Device ◽  
Graphitic Carbon Nitride ◽  
Memory Devices ◽  
Characteristic P ◽  
Switching Characteristic ◽  
Solution Processed ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Carbon Nitride Nanosheets

A memory device is demonstrated based on g-C3N4 nanosheets with a non-volatile behavior and a bipolar switching characteristic.

Human hair keratin for physically transient resistive switching memory devices

2019 ◽  
Vol 7 (11) ◽  
pp. 3315-3321 ◽  
Author(s):  
Qiqi Lin ◽  
Shilei Hao ◽  
Wei Hu ◽  
Ming Wang ◽  
Zhigang Zang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Human Hair ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Performance ◽  
Hair Keratin ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Memory

A physically transient non-volatile memory device made of keratin exhibits great resistive switching performance.

Nanocrystal Non-Volatile Memory Devices

2009 ◽  
Vol 609 ◽  
pp. 1-9 ◽  
Author(s):  
Zs.J. Horváth ◽  
P. Basa
Keyword(s):  
Present Status ◽  
Semiconductor Nanocrystals ◽  
Memory Devices ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Non Volatile Memory ◽  
Silicon Structures ◽  
Physical Background ◽  
Volatile Memory

The physical background and present status of the application of metal-insulator-silicon structures with semiconductor nanocrystals embedded in the insulator layer for memory purposes is breafly summarized.

Programmable, electroforming-free TiOx/TaOx heterojunction-based non-volatile memory devices

Nanoscale ◽  
2019 ◽  
Vol 11 (39) ◽  
pp. 18159-18168 ◽  
Author(s):  
Saurabh Srivastava ◽  
Joseph Palathinkal Thomas ◽  
Kam Tong Leung
Keyword(s):  
Memory Device ◽  
Memory Devices ◽  
Data Retention ◽  
Pt Electrodes ◽  
Non Volatile Memory ◽  
Volatile Memory

A TiOx/TaOx heterojunction sandwiched between a pair of Pt electrodes provides an electroforming-free non-volatile memory device with a remarkably low programming voltage (+0.5 V), high endurance (104 cycles) and data retention (105 s).

Effect of Various Electrode Materials in Non-Volatile Memory Device Using Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) (PEDOT:PSS) Thin Films

2008 ◽  
Vol 54 ◽  
pp. 470-473 ◽  
Author(s):  
Hun Jun Ha ◽  
J.M. Lee ◽  
M. Kim ◽  
O.H. Kim
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Electrode Materials ◽  
Memory Device ◽  
Current Level ◽  
Switching Behavior ◽  
Memory Devices ◽  
Carrier Injection ◽  
Bipolar Switching ◽  
Non Volatile Memory

We have studied the effect of various electrodes on non-volatile polymer memory devices. The ITO/PEDOT:PSS/Top electrode (TE) devices had bipolar switching behavior. The OFF current level of devices increased from 3×10-4 A to 3×10-3 A and the ON voltage decreased from 0.8 V to 0.5 V as the TE work function increased. The yield of devices decreased from over 50 % to under 10 % as the TE work function of devices increased. This result occurred because carrier injection was affected by the TE work function.

scholarly journals Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri2 Perovskite

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6629
Author(s):  
Wang Ke ◽  
Xiaoting Yang ◽  
Tongyu Liu
Keyword(s):  
Data Storage ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Memory Device ◽  
Resistance Switching ◽  
Memory Devices ◽  
Switching Effect ◽  
Short Period ◽  
Non Volatile Memory ◽  
Order Of Magnitude

In this study, the CsPbBrI2 perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br+ into the CsPbI3 film, which solved the problem of instability of the traditional perovskite phase. Based on the CsPbBrI2 perovskite film, the Ag/CsPbBrI2/ITO memory device with a resistance switching effect was prepared. The morphology and phase compositions of the film were analyzed by scanning electron microscope and X-ray diffraction. The non-volatile and repeatable resistance switching effect of the Ag/CsPbBrI2/ITO memory device was measured under open-air conditions. The experimental results show that the surface of the CsPbBrI2 perovskite film is uniform and dense, and the Ag/CsPbBrI2/ITO memory device has an order of magnitude resistance-on-off ratio after 500 cycles of cyclic voltage. This study shows that Ag/CsPbBrI2/ITO memory devices based on CsPbBrI2 perovskite films have potential applications in the field of non-volatile memory devices. At the same time, the transient properties of the CsPbBrI2 film that can quickly dissolve in deionized water make it potentially useful in short-period data storage units and implantable electronic devices with human or environmental sensors.

New MEH-PPV Based Composite Materials for Rewritable Nonvolatile Polymer Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
Mikhail Dronov ◽  
Ivan Belogorohov ◽  
Dmitry Khokhlov
Keyword(s):  
Composite Material ◽  
Composite Materials ◽  
Resistive Switching ◽  
Memory Performance ◽  
Memory Device ◽  
Memory Devices ◽  
Electrical Behavior ◽  
Aluminum Phthalocyanine ◽  
Behavior Based ◽  
Polymer Memory

ABSTRACTWe present the memory performance of devices with bistable electrical behavior based on MEH-PPV (Poly (1-methoxy-4-(2-ethylhexyloxy)-p-phenylenevinylene)) containing metal (Zn or Fe-Ni) particles. Another memory device based on aluminum phthalocyanine chloride (PcAlCl) added to the composite material reveals the photoinduced switching, in addition to the electrical one. Possible mechanisms for resistive switching are discussed.

Gold nanoparticle charge trapping and relation to organic polymer memory devices

2009 ◽  
Vol 367 (1905) ◽  
pp. 4215-4225 ◽  
Author(s):  
D. Prime ◽  
S. Paul ◽  
P. W. Josephs-Franks
Keyword(s):  
Gold Nanoparticles ◽  
Charge Trapping ◽  
Organic Polymer ◽  
Memory Devices ◽  
Metal Insulator ◽  
Current State ◽  
Device Structures ◽  
Low Costs ◽  
Silicon Based ◽  
Polymer Memory

Nanoparticle-based polymer memory devices (PMDs) are a promising technology that could replace conventional silicon-based electronic memory, offering fast operating speeds, simple device structures and low costs. Here we report on the current state of nanoparticle PMDs and review some of the problems that are still present in the field. We also present new data regarding the charging of gold nanoparticles in metal–insulator–semiconductor capacitors, showing that charging is possible under the application of an electric field with a trapped charge density due to the nanoparticles of 3.3×10 12  cm −2 .

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