Physical Properties and Diffusion Characteristics of CVD-Grown TiSiN Films

2001 ◽  
Vol 697 ◽  
Author(s):  
Dalaver Anjum ◽  
Katharine Dovidenko ◽  
Serge Oktyabrsky ◽  
Eric Eisenbraun ◽  
Alain E. Kaloyeros
Keyword(s):  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Flow Rate Ratio ◽  
X Ray ◽  
Transmission Electron ◽  
Diffusion Characteristics ◽  
Thick Barrier ◽  
Specific Electrical Resistivity ◽  
And Diffusion

AbstractTiSiN films grown by chemical vapor deposition were characterized to evaluate the properties relevant to the application as a diffusion barrier in Cu-based interconnects. The films were grown using TiI4 + SiI4 + NH3 + H2 chemistry at substrate temperature, 370°C, and SiI4 - to-TiI4 precursor flow rate ratio of 30. The combined results from x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) revealed that the bulk of Ti32Si21N42 films were predominantly consisted of a mixture of cubic TiN and amorphous SiNx phases. The specific electrical resistivity of the films was about 2000 μΩcm which is a few times higher than that of sputtered TiSiN films having similar composition and thicknesses. The 40 nm-thick barrier appeared to be thermally stable against Cu diffusion at the annealing temperatures up to 550°C. Breakdown of this diffusion barrier occurred at 600°C and was accompanied by the formation of Cu3Si protrusions at the TiSiN/Si interface.

scholarly journals Deposition Mechanism and Thickness Control of CVD SiC Coatings on NextelTM440 Fibers

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 408
Author(s):  
Yi Wang ◽  
Jian Sun ◽  
Bing Sheng ◽  
Haifeng Cheng
Keyword(s):  
Coating Thickness ◽  
Photoelectron Spectroscopy ◽  
Deposition Time ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Deposition Mechanism ◽  
Thickness Control ◽  
X Ray ◽  
Transmission Electron ◽  
Sic Coatings

SiC coatings were successfully synthesized on NextelTM440 fibers by chemical vapor deposition (CVD) using methyltrichlorosilane as the original SiC source at 1373 K. After deposited, the fibers were fully surrounded by uniform coatings with some bulges. The X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HR-TEM) results indicated that the coatings were composed of β-SiC and free carbon. Moreover, thickness control of the coatings could be carried out by adjusting the deposition time. The coating thickness rose exponentially, and the exterior of the coatings became looser as the deposition time increased. The thickness of about 1.5 µm was obtained after depositing for 4 h. The coating thickness was also theoretically calculated, and the result agreed well with the measured thickness. Finally, the related deposition mechanism is discussed and a deposition model is built.

A STUDY OF ALUMINA THIN FILMS GROWN BY LOW PRESSURE MOCVD: XPS AND AES

2002 ◽  
Vol 16 (08) ◽  
pp. 1261-1267 ◽  
Author(s):  
M. P. SINGH ◽  
S. A. SHIVASHANKAR ◽  
T. SHRIPATHI
Keyword(s):  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Alumina Film ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Low Pressure Mocvd ◽  
Substrate Temperatures

We have studied the chemical composition of alumina ( Al 2 O 3) films grown on Si(100) at different substrate temperatures by metalorganic chemical vapor deposition (MOCVD) using aluminium acetylactonate { Al(acac) 3} as the precursor. We have found that the resulting films of Al 2 O 3 contain substantial amounts of carbon. X-ray photoelectron spectroscopy (XPS) was employed to study the chemical state of carbon present in such films. The XPS spectrum reveals that the carbon present in Al 2 O 3 film is graphitic in nature. Auger electron spectroscopy (AES) was employed to study the distribution of carbon in the Al 2 O 3 films. The AES depth profile reveals that carbon is present throughout the film. The AES study on Al 2 O 3 films corroborates the XPS findings. An investigation of the Al 2 O 3/ Si (100) interface was carried out using cross-sectional transmission electron microscopy (XTEM). The TEM study reveals textured growth of alumina film on Si(100), with very fine grains of alumina embedded in an amorphous carbon-containing matrix.

A study of Al2O3:C films on Si(100) grown by low pressure MOCVD

2002 ◽  
Vol 747 ◽  
Author(s):  
M. P. Singh ◽  
C. S. Thakur ◽  
N. Bhat ◽  
S. A. Shivashankar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
High Frequency ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
X Ray ◽  
Transmission Electron ◽  
Current Voltage ◽  
Low Pressure Mocvd

ABSTRACTWe report the characterization of carbonaceous aluminium oxide, Al2O3:C, films grown on Si(100) by metalorganic chemical vapor deposition. The focus is on the study of the effects of carbon on the dielectric properties of aluminium oxide in a qualitative manner. The carbon present in the aluminium oxide film derives from aluminium acetylacetonate used as the source of aluminium. As-grown films comprise nanometer-sized grains of alumina (∼ 20–50 nm) in an amorphous carbonaceous matrix, as examined by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films are shiny; they are smooth as observed by scanning electron microscopy (SEM). An attempt has been made to explore the defects (viz., oxide charge density) in the aluminium oxide films using room temperature high frequency capacitance – voltage (C-V) and current–voltage (I-V) measurements. The hysteresis and stretch-out in the high frequency C-V plots is indicative of charge trapping. The role of heteroatoms, as characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy, in the transport of charge in Al2O3:C films is discussed.

scholarly journals Grain Structure and Growth of Dispersed Phase BN-AlN Coatings Grown via Chemical Vapor Deposition

1990 ◽  
Vol 202 ◽  
Author(s):  
Garth B. Freeman ◽  
Woo Y. Lee ◽  
W. J. Lackey ◽  
John A. Hanigofsky ◽  
Karren More
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Ceramic Coatings ◽  
Grain Structure ◽  
Dispersed Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

ABSTRACTThis paper discusses the variation in microstructures encountered during the separate depositions of boron nitride (BN) and aluminum nitride (A1N) as well as during the codeposition of BNߝA1N dispersed phase ceramic coatings. This combination was chosen in order to take advantage of the self lubricating properties of hexagonal BN along with the hard, erosion resistance of A1N. Films were characterized using scanning and transmission electron microscopy (SEM and TEM), x-ray photoelectron spectroscopy (XPS), and x-ray diffraction (XRD).A range of coating microstructures are possible depending on the conditions of deposition. The best films produced, in terms of hardness, density, and tenacity, were a fine mixture of turbostratic BN and preferentially oriented A1N whiskers aligned with the whisker axis perpendicular to the substrate surface as seen by both electron microscopy and x-ray diffraction.

scholarly journals CVD-Grown 2D Nonlayered NiSe as a Broadband Photodetector

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1066
Author(s):  
Fang Liang ◽  
Liangliang Zhan ◽  
Tianyu Guo ◽  
Xing Wu ◽  
Junhao Chu
Keyword(s):  
Crystal Structure ◽  
Photoelectron Spectroscopy ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Microscopy Study ◽  
Chemical Vapor Deposition Method ◽  
Layered Crystal ◽  
X Ray ◽  
Transmission Electron ◽  
Physical And Chemical

Two-dimensional (2D) materials have expansive application prospects in electronics and optoelectronics devices due to their unique physical and chemical properties. 2D layered materials are easy to prepare due to the layered crystal structure and the interlayer van der Waals combination. However, the 2D nonlayered materials are difficult to prepare due to the nonlayered crystal structure and the combination of interlayer isotropic chemical bonds, resulting in limited research on 2D nonlayered materials with broad characteristics. Here, a 2D nonlayered NiSe material has been synthesized by a chemical vapor deposition method. The atomic force microscopy study shows that the grown NiSe with a thin thickness. Energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and transmission electron microscopy results demonstrate the uniformity and high quality of NiSe flakes. The NiSe based photodetector realizes the laser response to 830 nm and 10.6 μm and the maximum responsivity is ~6.96 A/W at room temperature. This work lays the foundation for the preparation of 2D nonlayered materials and expands the application of 2D nonlayered materials in optoelectronics fields.

scholarly journals Characterization and Applications of Nanoparticles Modified in-Flight with Silica or Silica-Organic Coatings

Nanomaterials ◽  
2018 ◽  
Vol 8 (7) ◽  
pp. 530 ◽  
Author(s):  
Patrick Post ◽  
Lisa Wurlitzer ◽  
Wolfgang Maus-Friedrichs ◽  
Alfred Weber
Keyword(s):  
Chemical Composition ◽  
Photoelectron Spectroscopy ◽  
Elevated Temperatures ◽  
Chemical Vapor ◽  
Organic Coatings ◽  
Coated Particles ◽  
X Ray ◽  
Transmission Electron ◽  
Coating Composition ◽  
Modification Of The Surface

Nanoparticles are coated in-flight with a plasma-enhanced chemical vapor deposition (PECVD) process at ambient or elevated temperatures (up to 300 °C). Two silicon precursors, tetraethyl orthosilicate (TEOS) and hexamethyldisiloxane (HMDSO), are used to produce inorganic silica or silica-organic shells on Pt, Au and TiO2 particles. The morphology of the coated particles is examined with transmission electron microscopy (TEM) and the chemical composition is studied with Fourier-transform infrared spectroscopy (FTIR), Energy-dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS). It is found that both the precursor and certain core materials have an influence on the coating composition, while other parameters, such as the precursor concentration, aerosol residence time and temperature, influence the morphology, but hardly the chemical composition. The coated particles are used to demonstrate simple applications, such as the modification of the surface wettability of powders and the improvement or hampering of the photocatalytic activity of titania particles.

A study of Al2O3:C films on Si(100) grown by low pressure MOCVD

2002 ◽  
Vol 745 ◽  
Author(s):  
M. P. Singh ◽  
C. S. Thakur ◽  
N. Bhat ◽  
S. A. Shivashankar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
High Frequency ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
X Ray ◽  
Transmission Electron ◽  
Current Voltage ◽  
Low Pressure Mocvd

ABSTRACTWe report the characterization of carbonaceous aluminium oxide, Al2O3:C, films grown on Si(100) by metalorganic chemical vapor deposition. The focus is on the study of the effects of carbon on the dielectric properties of aluminium oxide in a qualitative manner. The carbon present in the aluminium oxide film derives from aluminium acetylacetonate used as the source of aluminium. As-grown films comprise nanometer-sized grains of alumina (∼ 20–50 nm) in an amorphous carbonaceous matrix, as examined by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films are shiny; they are smooth as observed by scanning electron microscopy (SEM). An attempt has been made to explore the defects (viz., oxide charge density) in the aluminium oxide films using room temperature high frequency capacitance – voltage (C-V) and current–voltage (I-V) measurements. The hysteresis and stretch-out in the high frequency C-V plots is indicative of charge trapping. The role of heteroatoms, as characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy, in the transport of charge in Al2O3:C films is discussed.

Effective Chemical Vapor Deposition and Characterization of N-Doped Graphene for High Electrochemical Performance

2021 ◽  
Vol 21 (6) ◽  
pp. 3183-3191
Author(s):  
Shanmugam Mahalingam ◽  
Mani Durai ◽  
Chinnasamy Sengottaiyan ◽  
Young-Ho Ahn
Keyword(s):  
Electron Microscopy ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Active Material ◽  
Chemical Vapor ◽  
Diffraction Field ◽  
X Ray ◽  
Transmission Electron ◽  
Doped Graphene ◽  
Charge Discharge

Here we reports an effective synthetic method for the preparation of N-graphene upon thermal annealing of prepared graphene oxide in the existence of ammonia. N-doped graphene oxide was analysed using different characterization techniques like X-ray diffraction, field emission scanning electron microscopy, high resolution transmission electron microscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The nitrogen atom showed good binding with the graphene sheets, that are analysed by the X-ray photoelectron spectroscopy. The synthesized N-graphene have shown higher thermal stability compared with GO and graphene. The elcerochemnical performance like Cyclic voltammetry as well chronopotentiometry charge–discharge calculations revealed that the N-doped graphene exhibits remarkable behaviour favors a specific capacitance value about 209 F g−1 at 5 mV s−1 and 270 F g−1 for 1 A g−1 applied current density including outsanding charge–discharge stability about 98% of the initial capacitance subsequent 1000 cycles at 5 A g−1. The N-content in the graphene material with the optimized reaction parameters potentially improved electrode active material for energy storage applications.

The Realization of Molecular Control Over Solid State Structure: Chemical Vapor Deposition of Gallium and Indium Sulfide Films

1992 ◽  
Vol 282 ◽  
Author(s):  
Michael B. Power ◽  
Andrew N. Macinnes ◽  
Aloysius F. Hepp ◽  
Andrew R. Barron
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Molecular Control ◽  
X Ray ◽  
Gallium Sulfide ◽  
Transmission Electron ◽  
Precursor Molecules ◽  
Deposited Films

ABSTRACTThe chemical vapor deposition of cubic gallium sulfide and tetragonalindium sulfide films is reported. The structure of the deposited films was demonstrated to be defined not solely by thermodynamics, but bythe predesigned molecular motif of the precursor molecules. Analysis of the deposited films has been obtained by transmission electron microscopy (TEM), with associated energy dispersive X-ray analysis (EDX) and X-ray photoelectron spectroscopy (XPS).

Characterization of Tib2/TISI2 Bilayer Structure Deposited by Sputtering

1995 ◽  
Vol 402 ◽  
Author(s):  
G. Sade ◽  
J. Pelleg
Keyword(s):  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Effective Diffusion ◽  
Barrier Properties ◽  
Titanium Boride ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Structural And Electrical Properties

AbstractBilayer of TiB2/TiSi2 was deposited by magnetron co-sputtering on silicon and alumina substrates, and this structure was investigated for structural and electrical properties. Substrate bias and annealing in vacuum have been applied to vary the film properties. X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) were used to characterize the structure, and chemical composition was characterized by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). Resistivity was measured by four probe method. Diffusion barrier properties were studied by AES. As deposited films are amorphous with resistivities of about 40 μΩcm. Post deposition annealing in vacuum shows that the amorphous titanium boride film is very stable. Crystallization starts above 1000°C as seen by XRD, and the crystallization temperature depends on the thickness of TiB2. TiSi2 C54 forms in the temperature range 586°C - 922°C, when TiB2 still remains in amorphous form. The TiSi2 sublayer serves as an additional effective diffusion barrier, preventing outdiffusion of boron from TiB2 into the Si substrate.

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