A study of Al2O3:C films on Si(100) grown by low pressure MOCVD

2002 ◽  
Vol 745 ◽  
Author(s):  
M. P. Singh ◽  
C. S. Thakur ◽  
N. Bhat ◽  
S. A. Shivashankar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
High Frequency ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
X Ray ◽  
Transmission Electron ◽  
Current Voltage ◽  
Low Pressure Mocvd

ABSTRACTWe report the characterization of carbonaceous aluminium oxide, Al2O3:C, films grown on Si(100) by metalorganic chemical vapor deposition. The focus is on the study of the effects of carbon on the dielectric properties of aluminium oxide in a qualitative manner. The carbon present in the aluminium oxide film derives from aluminium acetylacetonate used as the source of aluminium. As-grown films comprise nanometer-sized grains of alumina (∼ 20–50 nm) in an amorphous carbonaceous matrix, as examined by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films are shiny; they are smooth as observed by scanning electron microscopy (SEM). An attempt has been made to explore the defects (viz., oxide charge density) in the aluminium oxide films using room temperature high frequency capacitance – voltage (C-V) and current–voltage (I-V) measurements. The hysteresis and stretch-out in the high frequency C-V plots is indicative of charge trapping. The role of heteroatoms, as characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy, in the transport of charge in Al2O3:C films is discussed.

A study of Al2O3:C films on Si(100) grown by low pressure MOCVD

2002 ◽  
Vol 747 ◽  
Author(s):  
M. P. Singh ◽  
C. S. Thakur ◽  
N. Bhat ◽  
S. A. Shivashankar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
High Frequency ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
X Ray ◽  
Transmission Electron ◽  
Current Voltage ◽  
Low Pressure Mocvd

ABSTRACTWe report the characterization of carbonaceous aluminium oxide, Al2O3:C, films grown on Si(100) by metalorganic chemical vapor deposition. The focus is on the study of the effects of carbon on the dielectric properties of aluminium oxide in a qualitative manner. The carbon present in the aluminium oxide film derives from aluminium acetylacetonate used as the source of aluminium. As-grown films comprise nanometer-sized grains of alumina (∼ 20–50 nm) in an amorphous carbonaceous matrix, as examined by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films are shiny; they are smooth as observed by scanning electron microscopy (SEM). An attempt has been made to explore the defects (viz., oxide charge density) in the aluminium oxide films using room temperature high frequency capacitance – voltage (C-V) and current–voltage (I-V) measurements. The hysteresis and stretch-out in the high frequency C-V plots is indicative of charge trapping. The role of heteroatoms, as characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy, in the transport of charge in Al2O3:C films is discussed.

A STUDY OF ALUMINA THIN FILMS GROWN BY LOW PRESSURE MOCVD: XPS AND AES

2002 ◽  
Vol 16 (08) ◽  
pp. 1261-1267 ◽  
Author(s):  
M. P. SINGH ◽  
S. A. SHIVASHANKAR ◽  
T. SHRIPATHI
Keyword(s):  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Alumina Film ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Low Pressure Mocvd ◽  
Substrate Temperatures

We have studied the chemical composition of alumina ( Al 2 O 3) films grown on Si(100) at different substrate temperatures by metalorganic chemical vapor deposition (MOCVD) using aluminium acetylactonate { Al(acac) 3} as the precursor. We have found that the resulting films of Al 2 O 3 contain substantial amounts of carbon. X-ray photoelectron spectroscopy (XPS) was employed to study the chemical state of carbon present in such films. The XPS spectrum reveals that the carbon present in Al 2 O 3 film is graphitic in nature. Auger electron spectroscopy (AES) was employed to study the distribution of carbon in the Al 2 O 3 films. The AES depth profile reveals that carbon is present throughout the film. The AES study on Al 2 O 3 films corroborates the XPS findings. An investigation of the Al 2 O 3/ Si (100) interface was carried out using cross-sectional transmission electron microscopy (XTEM). The TEM study reveals textured growth of alumina film on Si(100), with very fine grains of alumina embedded in an amorphous carbon-containing matrix.

scholarly journals Grain Structure and Growth of Dispersed Phase BN-AlN Coatings Grown via Chemical Vapor Deposition

1990 ◽  
Vol 202 ◽  
Author(s):  
Garth B. Freeman ◽  
Woo Y. Lee ◽  
W. J. Lackey ◽  
John A. Hanigofsky ◽  
Karren More
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Ceramic Coatings ◽  
Grain Structure ◽  
Dispersed Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

ABSTRACTThis paper discusses the variation in microstructures encountered during the separate depositions of boron nitride (BN) and aluminum nitride (A1N) as well as during the codeposition of BNߝA1N dispersed phase ceramic coatings. This combination was chosen in order to take advantage of the self lubricating properties of hexagonal BN along with the hard, erosion resistance of A1N. Films were characterized using scanning and transmission electron microscopy (SEM and TEM), x-ray photoelectron spectroscopy (XPS), and x-ray diffraction (XRD).A range of coating microstructures are possible depending on the conditions of deposition. The best films produced, in terms of hardness, density, and tenacity, were a fine mixture of turbostratic BN and preferentially oriented A1N whiskers aligned with the whisker axis perpendicular to the substrate surface as seen by both electron microscopy and x-ray diffraction.

Effective Chemical Vapor Deposition and Characterization of N-Doped Graphene for High Electrochemical Performance

2021 ◽  
Vol 21 (6) ◽  
pp. 3183-3191
Author(s):  
Shanmugam Mahalingam ◽  
Mani Durai ◽  
Chinnasamy Sengottaiyan ◽  
Young-Ho Ahn
Keyword(s):  
Electron Microscopy ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Active Material ◽  
Chemical Vapor ◽  
Diffraction Field ◽  
X Ray ◽  
Transmission Electron ◽  
Doped Graphene ◽  
Charge Discharge

Here we reports an effective synthetic method for the preparation of N-graphene upon thermal annealing of prepared graphene oxide in the existence of ammonia. N-doped graphene oxide was analysed using different characterization techniques like X-ray diffraction, field emission scanning electron microscopy, high resolution transmission electron microscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. The nitrogen atom showed good binding with the graphene sheets, that are analysed by the X-ray photoelectron spectroscopy. The synthesized N-graphene have shown higher thermal stability compared with GO and graphene. The elcerochemnical performance like Cyclic voltammetry as well chronopotentiometry charge–discharge calculations revealed that the N-doped graphene exhibits remarkable behaviour favors a specific capacitance value about 209 F g−1 at 5 mV s−1 and 270 F g−1 for 1 A g−1 applied current density including outsanding charge–discharge stability about 98% of the initial capacitance subsequent 1000 cycles at 5 A g−1. The N-content in the graphene material with the optimized reaction parameters potentially improved electrode active material for energy storage applications.

Growth behavior and microstructure of oxide scale formed on MoSi2 coating at 773 K

2004 ◽  
Vol 19 (10) ◽  
pp. 3009-3018 ◽  
Author(s):  
Kyung-Hwan Lee ◽  
Jin-Kook Yoon ◽  
Gyeung-Ho Kim ◽  
Jung-Mann Doh ◽  
Kyung-Tae Hong ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Oxide Scale ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Growth Behavior ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
The Matrix ◽  
Mosi2 Coating

Growth behavior and microstructure of oxide scale formed on MoSi2 coating by cyclic oxidation testing in air at 500 °C were investigated using field emission scanning electron microscopy, cross-sectional transmission electron microscopy, glancing angle x-ray diffraction, and x-ray photoelectron spectroscopy. MoSi2 coating was prepared by chemical vapor deposition of Si on a Mo substrate at 1100 °C for 5 h using SiCl4–H2 precursor gas mixtures. After the incubation period of about 454 cycles, accelerated oxidation behavior was observed in MoSi2 coating and the weight gain increased linearly with increasing oxidation cycles. Microstructural analyses revealed that pest oxide scale was formed in three sequential processes. Initially, nanometer-sized crystalline Mo4O11 particles were formed with an amorphous SiO2 matrix at MoSi2 interface region. Inward diffusing oxygen reacted with Mo4O11 to form Mo9O26 nano-sized particles. At final stage of oxidation, MoO3 was formed from Mo9O26 with oxygen and growth of MoO3 took place forming massive precipitates with irregular and wavy shapes. The internal stress caused by the growth of massive MoO3 precipitates and the volatilization of MoO3 was attributed to the formation of many lateral cracks into the matrix leading to pest oxidation of MoSi2 coating.

scholarly journals Synthesis of Ce1−xPdxO2−δ Solid Solution in Molten Nitrate

Catalysts ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 640
Author(s):  
Hideaki Sasaki ◽  
Keisuke Sakamoto ◽  
Masami Mori ◽  
Tatsuaki Sakamoto
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
Solid Solutions ◽  
Photoelectron Spectroscopy ◽  
Synthesis Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Co Precipitation ◽  
Ionic States

CeO2-based solid solutions in which Pd partially substitutes for Ce attract considerable attention, owing to their high catalytic performances. In this study, the solid solution (Ce1−xPdxO2−δ) with a high Pd content (x ~ 0.2) was synthesized through co-precipitation under oxidative conditions using molten nitrate, and its structure and thermal decomposition were examined. The characteristics of the solid solution, such as the change in a lattice constant, inhibition of sintering, and ionic states, were examined using X-ray diffraction (XRD), scanning electron microscopy–energy-dispersive X-ray spectroscopy (SEM−EDS), transmission electron microscopy (TEM)−EDS, and X-ray photoelectron spectroscopy (XPS). The synthesis method proposed in this study appears suitable for the easy preparation of CeO2 solid solutions with a high Pd content.

Characterization of columns grown during KrF laser micromachining of Al2O3–TiC ceramics

2003 ◽  
Vol 18 (5) ◽  
pp. 1123-1130 ◽  
Author(s):  
V. Oliveira ◽  
R. Vilar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Laser Pulses ◽  
Formation Mechanisms ◽  
X Ray ◽  
Reducing Conditions ◽  
Transmission Electron ◽  
Column Formation ◽  
Krf Laser

This paper aims to contribute to the understanding of column formation mechanisms in Al2O3–TiC ceramics micromachined using excimer lasers. Chemical and structural characterization of columns grown in Al2O3–TiC composite processed with 200 KrF laser pulses at 10 J/cm2 was carried out by scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction analysis. Fully developed columns consist of a core of unprocessed material surrounded by an outer layer of Al2TiO5, formed in oxidizing conditions, and an inner layer, formed in reducing conditions, composed of TiC and Al3Ti or an AlTi solid solution. Possible mechanisms of column formation are discussed.

scholarly journals Green Synthesis of Feather-Shaped MoS2/CdS Photocatalyst for Effective Hydrogen Production

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Yang Liu ◽  
Hongtao Yu ◽  
Xie Quan ◽  
Shuo Chen
Keyword(s):  
Electron Microscopy ◽  
Hydrogen Production ◽  
Photoelectron Spectroscopy ◽  
Diffuse Reflectance ◽  
Sulfur Source ◽  
X Ray ◽  
Transmission Electron ◽  
Microscopy Images ◽  
Effective Hydrogen ◽  
Better Than

MoS2/CdS photocatalyst was fabricated by a hydrothermal method for H2production under visible light. This method used low toxic thiourea as a sulfur source and was carried out at 200°C. Thus, it was better than the traditional methods, which are based on an annealing process at relatively high temperature (above 400°C) using toxic H2S as reducing agent. Scanning electron microscopy and transmission electron microscopy images showed that the morphologies of MoS2/CdS samples were feather shaped and MoS2layer was on the surface of CdS. The X-ray photoelectron spectroscopy testified that the sample was composed of stoichiometric MoS2and CdS. The UV-vis diffuse reflectance spectra displayed that the loading of MoS2can enhance the optical absorption of MoS2/CdS. The photocatalytic activity of MoS2/CdS was evaluated by producing hydrogen. The hydrogen production rate on MoS2/CdS reached 192 μmol·h−1. This performance was stable during three repeated photocatalytic processes.

scholarly journals Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation

2005 ◽  
Vol 10 ◽  
Author(s):  
Z. Gu ◽  
L. Du ◽  
J.H. Edgar ◽  
E.A. Payzant ◽  
L. Walker ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
Original Source ◽  
X Ray ◽  
Alloy Crystal ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
Vapor Distribution ◽  
Uniform Composition

AlN-SiC alloy crystals, with a thickness greater than 500 µm, were grown on 4H- and 6H-SiC substrates from a mixture of AlN and SiC powders by the sublimation-recondensation method at 1860-1990 °C. On-axis SiC substrates produced a rough surface covered with hexagonal grains, while 6H- and 4H- off-axis SiC substrates with different miscut angles (8° or 3.68°) formed a relatively smooth surface with terraces and steps. The substrate misorientation ensured that the AlN-SiC alloy crystals grew two dimensionally as identified by scanning electron microscopy (SEM). X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the AlN-SiC alloys had the wurtzite structure. Electron probe microanalysis (EPMA) and x-ray photoelectron spectroscopy (XPS) demonstrated that the resultant alloy crystals had non-stoichiometric ratios of Al:N and Si:C and a uniform composition throughout the alloy crystal from the interface to the surface. The composition ratio of Al:Si of the alloy crystals changed with the growth temperature, and differed from the original source composition, which was consistent with the results predicted by thermodynamic calculation of the solid-vapor distribution of each element. XPS detected the bonding between Si-C, Si-N, Si-O for the Si 2p spectra. The dislocation density decreased with the growth, which was lower than 106 cm−2 at the alloy surface, more than two orders of magnitude lower compared to regions close to the crystal/substrate interface, as determined by TEM.

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