Sol-Gel Synthesis and Characterization of Neodymium-Ion Doped Nanostructured Titania Thin Films

2001 ◽  
Vol 703 ◽  
Author(s):  
Andrew Burns ◽  
W. Li ◽  
C. Baker ◽  
S.I. Shah
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Anatase Phase ◽  
Sol Gel ◽  
Ionic Radii ◽  
Si Substrates ◽  
Gel Technique ◽  
The Difference ◽  
Sol Gel Synthesis

ABSTRACTNd doped TiO2 nanostructured thin films were prepared by sol-gel technique on quartz and Si substrates using TiCl4 precursor. As-deposited amorphous films were annealed to form anatase phase in the thin films. The film grain size increased with annealing temperature. Above 800°C, rutile began to segregate and the grain size decreased slightly.The photodegradation of 2-chlorophenol (2-CP) was studied. Doping TiO2 with Nd+3 reduced the photodegradation time. The difference in the ionic radii of Nd+3 and Ti+4 and the oxygen affinities of Nd and Ti were responsible for this effect. These differences help promote electron trapping, thereby increasing the lifetime of the holes which are responsible for the oxidation of 2-CP.

Microstructure Study on Gd-Doped BaTiO3 Sol-Gel Multilayer Thin Films Using AFM for Optoelectronic Applications

2014 ◽  
Vol 911 ◽  
pp. 251-255 ◽  
Author(s):  
Yen Chin Teh ◽  
Ala’eddin A. Saif ◽  
Z.A.Z. Jamal ◽  
Prabakaran Poopalan
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Sol Gel ◽  
Molar Ratio ◽  
Multilayer Thin Films ◽  
Contact Mode ◽  
Si Substrates ◽  
Atomic Force ◽  
Gel Technique ◽  
Doped Barium Titanate

Gadolinium doped barium titanate (Gd-BaTiO3) thin films with the molar ratio of 70:30 have been fabricated on SiO2/Si substrates using sol-gel technique. The effect of number of deposited layers on the grain size and surface morphology has been investigated using an atomic force microscope in contact mode. AFM micro-images show that the films have well distributed grains, dense and crack free surface. In general, the results show that the grain size increases from ~170 nm to ~189 nm as the number of deposited layers increase from one to four layers which attributed to the grain growth mechanism during heating and annealing processes. However, the surface of the films is analysed through amplitude parameters to find out that the films surface is smooth with a predominant for peaks and relatively low number of high peaks and low valleys.

Structural Characterization Of SrBi2Ta209 Thin Films

1997 ◽  
Vol 474 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Bond Length ◽  
Size Distribution ◽  
Grain Size Distribution ◽  
Structural Characterization ◽  
Sol Gel ◽  
Frequency Shifts ◽  
Gel Technique

ABSTRACTThin films of SrBiTa2O9, (SBT) were deposited on Si using Sol-Gel technique. The thicknesses of the films are 200 nm (A) and 400 nm (B), respectively. SEM studies show isolated grains in both SBT films with a grain size distribution between 0.1 and 0.5 μ. However, most of the grain size in the film is smaller than 0.1 μ. EDX analysis indicates that the films are inhomogeneous. FTIR external reflectivity measurements of the samples show bands around 1260, 936(for SBT2), 955(for SBT4), 770, 600 cm−1. Micro Raman spectra shows inhomogeneities in the SBT films. Bands corresponding to the SBT materials were found, but frequency shifts and broadening were observed in almost every band. Particularly, the band around 818 cm−1 was found to change from 785 to 827 cm−1. Also, due to the stretching of the Ta06 octahedron, the Alg mode was found to be approximately 163 cm−1. This change seems to be related to the Ta-0 bond length.

SYNTHESIS AND CHARACTERIZATION OF La-DOPED ZnO (La:ZnO) FILMS FOR PHOTODETECTORS

2019 ◽  
Vol 27 (07) ◽  
pp. 1950173 ◽  
Author(s):  
BESTOON ANWER GOZEH ◽  
ABDULKERIM KARABULUT ◽  
MUDHAFFER M AMEEN ◽  
ABDULKADIR YILDIZ ◽  
FAHRETTIN YAKUPHANOĞLU
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Electrical Characterization ◽  
Zno Thin Films ◽  
Si Substrates ◽  
Electronic Parameters ◽  
Gel Technique ◽  
Doped Zno ◽  
La Doped

In this work, the La-doped ZnO thin films were fabricated with different La concentrations by the use of sol–gel technique to synthesize the photodevice. The transparent metal oxide La-doped ZnO thin films were grown on glass and [Formula: see text]-Si substrates using spin coating technique. Optical, surface morphology and electrical characterization of the fabricated Al/[Formula: see text]-Si/La:ZnO/Al devices have been performed using [Formula: see text]–[Formula: see text] and [Formula: see text]/[Formula: see text]–[Formula: see text] characteristics under dark and different illumination conditions. Herein, from [Formula: see text]–[Formula: see text] characteristics, the crucial electronic parameters such as barrier height, ideality factor and series resistance were investigated. The photodevice transient photocurrent increases with the increase of illumination intensity. The current ratios of [Formula: see text]/[Formula: see text] were calculated for the fabricated devices. Among the devices, the highest photoresponse was found to be about 2186 for the Al/[Formula: see text]-Si/La(0.5 wt.%):ZnO/Al structure. The [Formula: see text]–[Formula: see text] behavior of fabricated device confirms the presence of interface states. The obtained results and photoresponse behaviors suggested that Al/[Formula: see text]-Si/La:ZnO/Al devices can enhance the applications in optoelectronic devices such as photodetectors.

Characterization of SrBi2Nb2O9 Thin Films Prepared by Sol Gel Technique

1996 ◽  
Vol 459 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Band ◽  
Sol Gel ◽  
Orthorhombic Symmetry ◽  
X Ray Diffraction ◽  
Ft Ir ◽  
Gel Technique ◽  
High Degree ◽  
First Time

ABSTRACTThin films of SrBi2Nb2O9 (SBN) with thicknesses of 0.1, 0.2, and 0.4 μ were grown by Sol-gel technique on silicon, and annealed at 650°C. The SBN films were investigated by Raman scatering for the first time. Raman spectra in some of the samples present bands around 60, 167, 196, 222, 302, 451, 560, 771, 837, and 863 cm−1, which correspond to the SBN formation. The study indicates that the films are inhomogeneous, and only in samples with thicknesses 0.4 μ the SBN material was found in some places. The prominent Raman band around 870 cm−1, which is the A1g mode of the orthorhombic symmetry, is assigned to the symmetric stretching of the NbO6 octahedrals. The frequency of this band is found to shift in different places in the same sample, as well as from sample to sample. The frequency shifts and the width of the Raman bands are discussed in term of ions in non-equilibrium positions. FT-IR spectra reveal a sharp peak at 1260 cm−1, and two broad bands around 995 and 772 cm−1. The bandwidths of the latter two bands are believed to be associated with the presence of a high degree of defects in the films. The experimental results of the SBN films are compared with those obtained in SBT (T=Ta) films. X-ray diffraction and SEM techniques are also used for the structural characterization.

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

Sol-gel synthesis and characterization of Ag nanoparticles in ZrO2 thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2541-2546 ◽  
Author(s):  
Eisuke Yokoyama ◽  
Hironobu Sakata ◽  
Moriaki Wakaki
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Composite Films ◽  
Dip Coating ◽  
Molar Ratio ◽  
X Ray Diffraction ◽  
Silver Surface ◽  
Molar Ratios ◽  
Sol Gel Synthesis

ZrO2 thin films containing silver nanoparticles were prepared using the sol-gel method with Ag to Zr molar ratios [Ag]/[Zr] = 0.11, 0.25, 0.43, 0.67, 1.00, 1.50, and 2.33. After dip coating on glass substrate, coated films were annealed at 200 and 300 °C in air. X-ray diffraction peaks corresponding to crystalline Ag were observed, but a specific peak corresponding to ZrO2 was not observed. At the molar ratio [Ag]/[Zr] = 0.25, the particle size of Ag distributed broadly centered at 17 nm for an annealing temperature of 200 °C and at 25 nm for 300 °C. The films annealed in air at 200 °C showed an absorption band centered at 450 nm because of the silver surface plasmon resonance, whereas films heated at 300 °C in air caused a red shift of the absorption to 500 nm. The absorption peak was analyzed using the effective dielectric function of Ag-ZrO2 composite films modeled with the Maxwell-Garnett expression.

Sol–gel synthesis and optical characterization of nano-crystalline ZnTiO3 thin films

2012 ◽  
Vol 41 (1) ◽  
pp. 60-64 ◽  
Author(s):  
M. Vishwas ◽  
K. Narasimha Rao ◽  
A. R. Phani ◽  
K. V. Arjuna Gowda
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Optical Characterization ◽  
Nano Crystalline ◽  
Sol Gel Synthesis

Structural and Optical Characterization of Synthesized TiO2 Nanopowder Using Sol–Gel Technique

2016 ◽  
Vol 15 (01n02) ◽  
pp. 1650002 ◽  
Author(s):  
S. Lourduraj ◽  
R. Victor Williams
Keyword(s):  
Anatase Phase ◽  
Sol Gel ◽  
Visible Spectrum ◽  
Average Crystallite Size ◽  
Xrd Analysis ◽  
Force Microscopy ◽  
Morphological Studies ◽  
Atomic Force ◽  
Gel Technique

The nanocrystalline TiO2 powder was synthesized by sol–gel method. The XRD analysis reveals that TiO2 powder was highly crystalline (anatase phase) and nanostructured with tetragonal system. The average crystallite size after calcined at 673[Formula: see text]K is found to be 7.7[Formula: see text]nm. The surface morphological studies using scanning electron microscopy (SEM) exhibit that the formation of nanosized TiO2 particles with less densification nature. Atomic force microscopy (AFM) topography exhibits the uniform distribution of spherical-shaped particles. The energy dispersive X-ray spectroscopy (EDX) confirms the presence of Titanium and Oxygen in synthesized TiO2 nanopowder. The value of optical bandgap of TiO2 nanopowder calculated from UV-Visible spectrum is 3.45[Formula: see text]eV. The presence of TiO2 particles is confirmed from the dominant fourier transform infrared (FTIR) peaks at 621[Formula: see text]cm[Formula: see text] and 412[Formula: see text]cm[Formula: see text].

LUMINESCENT PROPERTIES OF SOL-GEL DEPOSITED Eu:TiO2 THIN FILMS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 769-773 ◽  
Author(s):  
M. GARCIA-ROCHA ◽  
A. CONDE-GALLARDO ◽  
I. HERNANDEZ-CALDERON ◽  
R. PALOMINO-MERINO
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Glass Substrates ◽  
Corning Glass ◽  
Different Temperatures ◽  
Hecd Laser

In this work we show the results on tile growth and optical characterization of TiO 2 thin films doped with Eu atoms. Eu:TiO2 films were grown at room temperature with different Eu concentrations by sol-gel on Si Corning glass substrates. A different crystalline structure is developed for the films deposited on Corning glass than those deposited on Si as observed from x-ray diffraction experiments. Room and low temperature photoluminescence (PL) was measured by using two different lines (325 and 442 nm) of a HeCd laser. A strong PL signal associated to the 5 D 0→7 F 2 transition from Eu +3 was observed. A better emission was obtained from those films deposited on Si substrates, Finally, the evolution of the PL signal is studied when the samples are annealed at different temperatures in O 2 atmosphere.

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