Charge Transport in Mesoscopic Carbon Network Structures

2001 ◽  
Vol 707 ◽  
Author(s):  
V. Ksenevich ◽  
J. Galibert ◽  
V. Samuilov ◽  
Y.-S. Seo ◽  
J. Sokolov ◽  
...  
Keyword(s):  
Charge Transport ◽  
Quantum Interference ◽  
Annealing Temperature ◽  
Weak Localization ◽  
Coulomb Gap ◽  
Temperature Range ◽  
Self Assembling ◽  
Carbon Structures ◽  
Carbon Networks ◽  
Low Dimensional

ABSTRACTThe charge transport and quantum interference effects in low-dimensional mesoscopic carbon networks prepared using self-assembling were investigated.The mechanism of conduction in low-dimensional carbon networks was found to depend on the annealing temperature of the nitrocellulose precursor. The charge transport mechanism for carbon networks obtained at Tann=750°C was found to be the hopping conductivity in the entire investigated temperature range. The Coulomb gap near the Fermi level in the density of states was observed in the investigated carbon networks. The width of the Coulomb gap was found to be decreased with the annealing temperature of the carbon structures. The crossover from the strong localization to the weak localization regime of the charge transport in the carbon structures, obtained at Tann=950°C and Tann=1150°C, was observed in the temperature range T>100 K and T>20 K, respectively.

Charge Transport in Mesoscopic Carbon Network Structures

2001 ◽  
Vol 705 ◽  
Author(s):  
V. Ksenevich ◽  
J. Galibert ◽  
V. Samuilov ◽  
Y.-S. Seo ◽  
J. Sokolov ◽  
...  
Keyword(s):  
Charge Transport ◽  
Quantum Interference ◽  
Annealing Temperature ◽  
Weak Localization ◽  
Coulomb Gap ◽  
Temperature Range ◽  
Self Assembling ◽  
Carbon Structures ◽  
Carbon Networks ◽  
Low Dimensional

AbstractThe charge transport and quantum interference effects in low-dimensional mesoscopic carbon networks prepared using self-assembling were investigated. The mechanism of conduction in low-dimensional carbon networks was found to depend on the annealing temperature of the nitrocellulose precursor. The charge transport mechanism for carbon networks obtained at Tann=750 0C was found to be the hopping conductivity in the entire investigated temperature range. The Coulomb gap near the Fermi level in the density of states was observed in the investigated carbon networks. The width of the Coulomb gap was found to be decreased with the annealing temperature of the carbon structures. The crossover from the strong localization to the weak localization regime of the charge transport in the carbon structures, obtained at Tann=950 0C and Tann=1150 0C, was observed in the temperature range T>100 K and T>20 K, respectively.

Research progress on organic self-assembling low-dimensional circularly polarized luminescent materials

2020 ◽  
Vol 13 (0) ◽  
pp. 1-11
Author(s):  
WANG Meng-Zhu ◽  
◽  
DENG Yong-Jing ◽  
LIU Shu-Juan ◽  
ZHAO Qiang
Keyword(s):  
Research Progress ◽  
Luminescent Materials ◽  
Circularly Polarized ◽  
Self Assembling ◽  
Low Dimensional

Nanowires self-assemble into β-MnO2 nanospheres to form crosslinking 3D hierarchical porous networks: with template-free fabrication and good supercapacitive performance over a broad temperature range

2021 ◽  
Vol 5 (19) ◽  
pp. 4944-4954
Author(s):  
Li-Li Yu ◽  
Wei-Ling Xu ◽  
Jian-Guo Zhang ◽  
Shuang Li ◽  
Rong-Bing Li ◽  
...  
Keyword(s):  
Broad Temperature Range ◽  
Supercapacitive Performance ◽  
Temperature Range ◽  
Porous Networks ◽  
Self Assembling ◽  
Hierarchical Porous ◽  
Template Free

Template-free fabrication of nanowires self-assembling into nanospheres and crosslinking into 3D hierarchical porous β-MnO2 networks with good supercapacitive performance over a broad temperature range.

About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

Electrophysical properties of bromine-intercalated low-dimensional carbon structures

2007 ◽  
Vol 33 (2) ◽  
pp. 268-271 ◽  
Author(s):  
T. I. Buryakov ◽  
A. I. Romanenko ◽  
O. B. Anikeeva ◽  
A. V. Okotrub ◽  
N. F. Yudanov ◽  
...  
Keyword(s):  
Electrophysical Properties ◽  
Carbon Structures ◽  
Low Dimensional

Charge Transport and Quantum Interference Effects in Oxazole-Terminated Conjugated Oligomers

2019 ◽  
Vol 141 (40) ◽  
pp. 16079-16084 ◽  
Author(s):  
Songsong Li ◽  
Hao Yu ◽  
Kenneth Schwieter ◽  
Kejia Chen ◽  
Bo Li ◽  
...  
Keyword(s):  
Charge Transport ◽  
Quantum Interference ◽  
Conjugated Oligomers ◽  
Interference Effects

Electron Transport Features in Heterostructures 3C-SiC(n)/Si(p) at the Elevated Temperatures

2013 ◽  
Vol 740-742 ◽  
pp. 498-501
Author(s):  
A.V. Afanasyev ◽  
V.A. Ilyin ◽  
V.V. Luchinin ◽  
A.S. Petrov
Keyword(s):  
Electron Transport ◽  
Charge Transport ◽  
Wide Temperature Range ◽  
Silicon Substrate ◽  
Elevated Temperatures ◽  
Reverse Current ◽  
Current Generation ◽  
Temperature Range ◽  
Working Temperature ◽  
Transport Diffusion

3C-SiC (n) / Si (p) heterostructures were obtained and investigated in a wide temperature range. It was shown, the main mechanisms of charge transport diffusion and recombination. The properties of silicon substrate were determining the working temperature range of investigated diodes. Therefore the rectifying properties of 3С-SiC(n)/Si(p) diodes were stable only up to 473 K. Two sites with different activation energies were observed on the Jrev(1/T) curves at fixed voltage: 0,32 eV which, characterized states on the SiC/Si interface, Е2 ≈ 0,55 eV which corresponds to the middle of silicon bandgap and defines existence of reverse current generation component.

HIGH FREQUENCY AHARONOV–BOHM OSCILLATIONS IN CARBON NANOTUBES

2003 ◽  
Vol 17 (04) ◽  
pp. 159-165
Author(s):  
LINFENG YANG ◽  
JIE JIANG ◽  
JINMING DONG
Keyword(s):  
Carbon Nanotubes ◽  
Magnetic Flux ◽  
High Frequency ◽  
Quantum Interference ◽  
Weak Localization ◽  
Experimental Results ◽  
Single Wall Carbon Nanotubes ◽  
Multiple Cycle ◽  
Breaking Length ◽  
Aharonov Bohm

We give a multiple-cycle quantum interference model and obtain magnetoresistance (MR) expression in the framework of the weak localization. The MR expression based upon finite phase-breaking length Lφ can explain well several experimental results about distinct negative magnetoresistance of carbon nanotubes. The higher-order oscillation peaks with magnetic flux exist in the MR can also be explained by our model. And a new method to measure the phase-breaking length Lφ of the single-wall carbon nanotubes has been proposed.

Acidified bimetallic MOFs constructed Co/N co-doped low dimensional hybrid carbon networks for high-efficiency microwave absorption

Carbon ◽  
2021 ◽  
Vol 171 ◽  
pp. 211-220 ◽  
Author(s):  
Xueqing Xu ◽  
Feitian Ran ◽  
Zhimin Fan ◽  
Zhongjun Cheng ◽  
Tong Lv ◽  
...  
Keyword(s):  
Microwave Absorption ◽  
High Efficiency ◽  
Carbon Networks ◽  
Low Dimensional ◽  
Hybrid Carbon ◽  
Co Doped
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