Comparison of Kinetics of TiSi2 Formation on Si(100) and Si(111)

1986 ◽  
Vol 71 ◽  
Author(s):  
C. A. Pico ◽  
N. C. Tran ◽  
J. R. Jacobs ◽  
M. G. Lagally
Keyword(s):  
Refractory Metal ◽  
Eutectic Temperature ◽  
Vacuum System ◽  
Silicide Formation ◽  
Substrate Orientation ◽  
Si Substrates ◽  
Metal Silicides ◽  
Kinetics Of Formation ◽  
P Type ◽  
Kinetics Of

AbstractRefractory-metal silicides are currently receiving widespread attention because of their usefulness as interconnects in VLSI devices. Potentially the most important of these silicides is TiSi2. TiSi2 offers a sharp stable interface, a high process-compatible eutectic temperature, and the lowest resistivity of all refractory-metal silicides. Much of the previous work on TiSi2 [1-8] has been directed towards the understanding of the kinetics of silicide formation in order to optimize these electrical and interfacial properties. One parameter that may affect the silicide formation is substrate orientation [9]. We have compared the kinetics of formation of TiSi2 for Ti deposited onto p-type 10Ω-cm Si(100) and Si(111). All process parameters except substrate orientation were identical. 2800Å of Ti was electron-beam evaporated at a rate of 20Å/s and a background pressure of 9×10−8 torr onto chemically cleaned (HNO3, HF, rinse) Si substrates and subsequently annealed at temperatures between 470°C and 700°C in evacuated sealed quartz tubes. A turbopumped vacuum system was used to evacuate the quartz tube before sealing. A Ti getter was independently heated to remove remaining background contaminants prior to annealing.

Titanium Disilicide Formation on Cmos Structures with Phosphorous Doped Gates

1993 ◽  
Vol 303 ◽  
Author(s):  
S. Chtttipeddi ◽  
A. K. Nanda ◽  
V. C. Kannan ◽  
W. T. Cochran
Keyword(s):  
Grain Size ◽  
Refractory Metal ◽  
Silicide Formation ◽  
Titanium Disilicide ◽  
Si Substrates ◽  
Metal Silicides ◽  
The Difference ◽  
Single Implant

ABSTRACTSelf aligned refractory metal silicides such as titanium disilicide have been used extensively in VLSI and ULSI structures. Unlike earlier work which has relied on undoped substrates and a single implant species, in the present study TiSi2 formation on phosphorous doped poly-Si in the presence of multiple dopants has been investigated. TEM micrographs are discussed which show the difference in silicide formation for the case of the BF2 and arsenic implanted samples. We have found that the presence of fluorine in the BF2 implant retards the silicide formation for phosphorous doped poly-Si substrates. Additionally, the effect of substrate grain size on TiSi2 formation has been investigated using undoped α-Si and poly-Si substrates.

Study on microstructures of As+ implanted Ti-Si bilayers with micro-micro beam technique

1990 ◽  
Vol 48 (4) ◽  
pp. 658-659
Author(s):  
Beiling Shao ◽  
Ansheng Liu ◽  
Jianming Yuan ◽  
Furong Ding
Keyword(s):  
Room Temperature ◽  
Boundary Diffusion ◽  
Silicide Formation ◽  
Si Substrates ◽  
Analytical Electron ◽  
Analytical Electron Microscope ◽  
P Type ◽  
Reaction Processes ◽  
Beam Technique ◽  
Sputtering System

A basic understanding of structures of Ti silicide—Si bilayers formed by ion implantation is of considerable interest because of the increasing application of MOS in VLSI. The aim of the present investigation is to explore the effect of ion implanting conditions on structures in Ti-Si bilayers. Rubloff et al. and Holloway et al. have studied Ti—Si interfaces and suggested that two processes may occur at Ti-Si interfaces, a reaction process other than silicide formation and a grain boundary diffusion process leading to localized silicide formation in the grain boundaries. The reaction processes in Ti—Si bilayers implanted by As+ ions were investigated in this work. An analytical electron microscope (JEOL 2000FX - LINK SYSTEM) with micro—micro beam (MMB) technique was employed.66nm Ti films were deposited onto P type <100> orientated Si substrates with a sputtering system at room temperature and the Ti-Si bilayers were implanted with 250 and 300 KeV and 1016 As+/cm2 respectively.

Lateral Silicide Growth

1983 ◽  
Vol 25 ◽  
Author(s):  
L. R. Zheng ◽  
E. Zingu ◽  
J. W. Mayer
Keyword(s):  
Activation Energy ◽  
Low Temperatures ◽  
Lateral Diffusion ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Metal Silicides ◽  
Silicide Growth ◽  
Si Films

ABSTRACTSilicide formation and growth kinetics have been investigated with lateral diffusion couples formed by deposition of Ni and Cr layers on patterned Si substrates and by deposition of Ni patterns on Si films. For annealing temperatures between 520 and 650°C the growth of CrSi2follows a (time)½ dependence with an activation energy of 1.4± 0.1 eV. In Ni-silicide formation at temperatures below 600°C, Ni was the predominant moving species. As the temperature increased, the motion of Si became significant. The apparent activation energy for silicide formation varied from Ea ≅ 1.4 eV for Ni motion at relatively low temperatures to Ea≅ 2.3 eV for Si motion that occurs at high temperatures. Lateral diffusion in device geometry structures resulted in degradation of contact planarity due to the penetration of metal silicides in Ni-Si structures or the erosion of silicon in Cr-Si structures.

Atomic Motion of Dopant During Interfacial Silicide Formation

1982 ◽  
Vol 18 ◽  
Author(s):  
M. Wittmer ◽  
C.-Y. Ting ◽  
K. N. Tu
Keyword(s):  
Noble Metal ◽  
Silicide Formation ◽  
Electrical Measurements ◽  
Ion Channeling ◽  
Metal Silicides ◽  
Junction Device ◽  
Dopant Atoms ◽  
Dopant Redistribution ◽  
Silicon Interface ◽  
Kinetics Of

The redistribution of implanted dopant atoms during silicide formation has attracted much interest recently because of its important implications for shallow junction device technology. Ion channeling and electrical measurements have shown that dopant atoms are pushed ahead in front of the moving silicide-silicon interface during the growth of near-noble metal silicides. However, dopant redistribution has not been observed with refractory metal silicides. This unique feature of near-noble metal silicides is discussed in conjunction with the growth kinetics of these silicides.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Kinetics of cyclization of S-ethoxycarbonylmethylisothiouronium chloride to 2-imino-4-thiazolidone

1979 ◽  
Vol 44 (3) ◽  
pp. 912-917 ◽  
Author(s):  
Vladimír Macháček ◽  
Said A. El-bahai ◽  
Vojeslav Štěrba
Keyword(s):  
Hydrochloric Acid ◽  
Dilute Hydrochloric Acid ◽  
Base Catalysis ◽  
General Base ◽  
Rate Limiting Step ◽  
Limiting Step ◽  
Kinetics Of Formation ◽  
Acid Catalyzed ◽  
Rate Limiting ◽  
Kinetics Of

Kinetics of formation of 2-imino-4-thiazolidone from S-ethoxycarbonylmethylisothiouronium chloride has been studied in aqueous buffers and dilute hydrochloric acid. The reaction is subject to general base catalysis, the β value being 0.65. Its rate limiting step consists in acid-catalyzed splitting off of ethoxide ion from dipolar tetrahedral intermediate. At pH < 2 formation of this intermediate becomes rate-limiting; rate constant of its formation is 2 . 104 s-1.

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