Influences of Hydrogen on the Evolution of the Electrical Resistivity Of Ultra-Thin Sputtered Copper Films Measured in Real-Time

2002 ◽  
Vol 721 ◽  
Author(s):  
E. V. Barnat ◽  
P. -I. Wang ◽  
D. Nagakura ◽  
T. -M. Lu

AbstractThe electrical resistivities of copper films sputtered in either argon or an argon-hydrogen atmosphere are measured in real time, during growth. The electrical resistivities for both cases are observed to be functions of the film's thickness, with the films grown in the hydrogen containing atmosphere possessing a resistivity of 4.5 +/- 0.2 μΩ-cm at 40 nm, lower than the resistivity of 5.0 +/-0.3 μΩ-cm for 40 nm thick films grown in the argon atmosphere. Furthermore, the electrical resistivities for both sets of films were observed to continue to evolve after the termination of deposition. The amount of change and the rate of change were observed to depend on the film's thickness as well as atmosphere the films were grown in. Measurements made by X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate that the presence of hydrogen also influences the preferential crystallographic orientation as well as grain size distribution. These measurements indicate that the differences in the microstructure are correlated to the observed differences in the behavior of the electrical resistivities.

1999 ◽  
Vol 562 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  

ABSTRACTSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.


1999 ◽  
Vol 564 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  

AbstractSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.


Author(s):  
Е.В. Астрова ◽  
А.В. Парфеньева ◽  
А.М. Румянцев ◽  
В.П. Улин ◽  
М.В. Байдакова ◽  
...  

The effect of annealing temperature in argon atmosphere on the ability of Si-C nanocomposites to reversibly insert lithium was investigated. It was found that the higher the annealing temperature during the formation of the composite, the lower is the capacitance of the electrode made from it. X-ray diffraction analysis and transmission electron microscopy reveal that the reason of the capacitance decrease is formation at T  1100°C of silicon carbide of cubic modification -SiC, inactive with respect to the formation of lithium alloys or intercalates.


2011 ◽  
Vol 393-395 ◽  
pp. 370-372
Author(s):  
Cun Jing Wang ◽  
Peng Yao ◽  
Gai Rong Chen

Catalytic decomposition of acetylene was carried out at 400 °C using iron supported on sodium chloride as catalyst and the product was heat-treated at 650 °C under an argon atmosphere for 2 h directly. The sample was examined by scanning electron microscopy, high resolution transmission electron microscopy and X-ray diffraction. The results show that nano onion-like fullerenes encapsulating Fe cores with diameters in the range 20-50 nm were obtained.


2010 ◽  
Vol 654-656 ◽  
pp. 2743-2746 ◽  
Author(s):  
Yi Xia ◽  
Sheng Ru Qiao ◽  
Chao Yan ◽  
Cheng Yu Zhang

Carbon fiber reinforced SiCN matrix composite (C/SiCN) was used in present investigation, its amorphous SiCN matrix was derived from the hexamethyldisilazane by chemical-liquid and vapor-infiltration into the carbon fiber weaving preform. The tension-tension fatigue was conducted at 1300°C in vaccum both for the as-received and 1500°C-annealed C/SiCN with 60Hz and 41MPa. The microstructure evolution of SiCN during fatigue was examined by X-Ray diffraction and transmission electron microscopy (TEM). The results indicate that pronounced crystallization takes place in the as-received C/SiCN during fatigue, and only β-SiC crystallites are detected within amorphous SiCN matrix, Si3N4 can’t be detected. This is different from the literature that reports that there isn’t any crystallization when C/SiCN is annealed at 1300°C under nitrogen or argon atmosphere. As for 1500°C-annealed C/SiCN, there isn’t any crystallization during fatigue, and it can be attributed to the phase stabilization in the SiCN matrix after annealing. Both vacuum and fatigue stress promote the crystallization course because they accelerate the decomposition of amorphous SiCN and atomic diffusion. Degradation – crystallization mechanism is used to explain the crystallization behavior of amorphous SiCN under condition of vacuum and tension-tension fatigue.


2008 ◽  
Vol 8 (12) ◽  
pp. 6338-6343
Author(s):  
K. F. Cai ◽  
L. Y. Huang ◽  
A. X. Zhang ◽  
J. L. Yin ◽  
H. Liu

SiCN nanowires are synthesized by pyrolysis of hexamethyldisilazane (HMDSN) using ferrocene as a catalyst precursor at 1200 °C in a flowing argon atmosphere on the surface of mullite substrate, polycrystalline alumina wafer and quartz tube. In oxygen-contained argon atmosphere, SiCN/SiO2 nanocables are synthesized. The as-synthesized products are characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and high-resolution electron microscopy equipped with energy dispersive X-ray spectroscopy. The lengths of the nanowires and nanocables are in the millimeter range. The diameter of the SiCN nanowires grown on mullite substrate and alumina wafer ranges from about 10–70 nm, while that of the nanowires grown on quartz tube surface is in the range of around 7–10 nm. The diameters of the SiCN/SiO2 nanocables are relatively large. A vapor-liquid-solid growth mechanism of the nanostructures is proposed. The electrical resistivity of a single SiCN/SiO2 nanocable is reported for the first time.


Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3806
Author(s):  
Díaz Barriga Arceo ◽  
González Reyes ◽  
Rivera Olvera ◽  
Medina Ovando ◽  
Garibay Febles

This paper reports the production of intermetallic microrods and microtubes from the decomposition of an intermetallic compound in an AlTiFe system. The intermetallic compound was obtained by mechanosynthesis of elemental powders of Al, Ti and Fe over 300 h at 400 rpm, sintering from compacted powder particles at 300 MPa per minute and at 900 °C for 3600 s in an argon atmosphere. The milled and sintered samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The intermetallic AlTi3 and Fe3Al phases were obtained during the milling process. After sintering, a decomposition of these intermetallic phases was found—Al3Ti0.75Fe0.25, Al3Ti, FeTi, AlTi3, Ti9Al23, Fe2Ti, Al86Fe14 and Al0.4Fe0.6. As a result of the decomposition, we observed the formation of hexagonal rods with intercalated phases of AlTi3 and Fe2Ti.


2006 ◽  
Vol 21 (5) ◽  
pp. 1243-1247 ◽  
Author(s):  
Ka Yee Chick ◽  
Manashi Nath ◽  
B.A. Parkinson

Tantalum disulfide (TaS2) nanoplatelets were produced by laser ablation of a TaS2 target under an argon atmosphere. The nanoplatelet dimensions and morphology were characterized by transmission electron microscopy and x-ray diffraction. The effect of the ablation laser power density on the size distribution of the nanoplatelets was studied. The TaS2 nanoplatelets were prone to oxidation upon exposure to air but could be stabilized by using 3-mercaptopropionic acid as the capping agent.


2019 ◽  
Vol 2019 ◽  
pp. 1-8
Author(s):  
Francisco J. Baldenebro-López ◽  
Raúl Peréz-Bustamante ◽  
Ivanovich Estrada-Guel ◽  
Roberto Martínez-Sánchez ◽  
Alberto Duarte-Moller ◽  
...  

The effect of CeO2 nanoparticles on the microstructure of two different metal matrixes, AA2024 aluminum alloy and pure aluminum, were studied. The aluminum-based composites were synthesized by mechanical milling and subsequently sintering at 550°C under an argon atmosphere. The microstructural evolution of consolidated composites was evaluated by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The experimental results revealed that the addition of CeO2 nanoparticles in the AA2024 alloy produced a dispersed needle-like Ce-Cu-rich phase that reduces the hardness of samples after sintering. On the contrary, the dispersion of CeO2 in pure aluminum shows significant improvement of hardness in comparison with the reinforced and unreinforced AA2024 aluminum alloy. During the sintering, the CeO2 nanoparticles show higher chemical stability in the aluminum matrix in comparison with the AA2024 matrix.


1996 ◽  
Vol 11 (11) ◽  
pp. 2681-2684 ◽  
Author(s):  
Jeong Soo Lee ◽  
Hyun Ja Kwon ◽  
Young Woo Jeong ◽  
Hyun Ha Kim ◽  
Cha Yeon Kim

The electrical resistivity property of RuO2 thin films grown on the SiO2/Si substrate by reactive dc sputtering was examined in terms of microstructure using x-ray diffraction and cross-sectional transmission electron microscopy. As the samples were annealed in the oxygen ambient over the temperature range 300–700 °C, the resistivity decreased from 270 to 90 μΩcm with increasing annealing temperature. When heat treatment was performed below 500 °C, the strain which accumulated in the RuO2 layer during deposition was released without significant increase in grain size. It is thought that below 500 °C improvement in the crystallinity plays an important role in the variation of the resistivity. Although a considerable amount of growth of RuO2 grains was achieved, the columnar structure of the RuO2 layer in the as-deposited sample remained unchanged even after annealing at 700 °C. The resistivity improvement above 500 °C was driven mainly by the grain boundary annihilation.


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