Microstructures and electrical resistivities of the RuO2 electrode on SiO2/Si annealed in the oxygen ambient

1996 ◽  
Vol 11 (11) ◽  
pp. 2681-2684 ◽  
Author(s):  
Jeong Soo Lee ◽  
Hyun Ja Kwon ◽  
Young Woo Jeong ◽  
Hyun Ha Kim ◽  
Cha Yeon Kim
Keyword(s):  
Electron Microscopy ◽  
Annealing Temperature ◽  
Columnar Structure ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Dc Sputtering ◽  
Transmission Electron ◽  
Electrical Resistivities

The electrical resistivity property of RuO2 thin films grown on the SiO2/Si substrate by reactive dc sputtering was examined in terms of microstructure using x-ray diffraction and cross-sectional transmission electron microscopy. As the samples were annealed in the oxygen ambient over the temperature range 300–700 °C, the resistivity decreased from 270 to 90 μΩcm with increasing annealing temperature. When heat treatment was performed below 500 °C, the strain which accumulated in the RuO2 layer during deposition was released without significant increase in grain size. It is thought that below 500 °C improvement in the crystallinity plays an important role in the variation of the resistivity. Although a considerable amount of growth of RuO2 grains was achieved, the columnar structure of the RuO2 layer in the as-deposited sample remained unchanged even after annealing at 700 °C. The resistivity improvement above 500 °C was driven mainly by the grain boundary annihilation.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

scholarly journals Transmission Electron Microscopy and X-ray Diffraction Investigation of the Microstructure of Nanoscale Multilayer TiAlN/VN Grown by Unbalanced Magnetron Deposition

2004 ◽  
Vol 19 (4) ◽  
pp. 1093-1104 ◽  
Author(s):  
Q. Luo ◽  
D.B. Lewis ◽  
P.Eh. Hovsepian ◽  
W-D. Münz
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Model ◽  
Growth Front ◽  
Columnar Structure ◽  
Layer Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Unbalanced Magnetron

Cubic NaCl-B1 structured multilayer TiAlN/VN with a bi-layer thickness of approximately 3 nm and atomic ratios of (Ti+Al)/V = 0.98 to 1.15 and Ti/V = 0.55 to 0.61 were deposited by unbalanced magnetron sputtering at substrate bias voltages between -75 and -150 V. In this paper, detailed transmission electron microscopy and x-ray diffraction revealed pronounced microstructure changes depending on the bias. At the bias -75 V, TiAlN/VN followed a layer growth model led by a strong (110) texture to form a T-type structure in the Thornton structure model of thin films, which resulted in a rough growth front, dense columnar structure with inter-column voids, and low compressive stress of -3.8 GPa. At higher biases, the coatings showed a typical Type-II structure following the strain energy growth model, characterized by the columnar structure, void-free column boundaries, smooth surface, a predominant (111) texture, and high residual stresses between -8 and -11.5 GPa.

Cross-Sectional TEM Study Of Phase Separation In Reaction Of Ni-Ta Films With GaAs

1985 ◽  
Vol 54 ◽  
Author(s):  
A. Lahav ◽  
M. Eizenberg ◽  
Y. Komem
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
Phase Separation ◽  
Gaas Substrate ◽  
Auger Spectroscopy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTThe reaction between Ni60Ta40 amorphous alloy and (001) GaAs was studied by cross-sectional transmission electron microscopy, Auger spectroscopy, and x-ray diffraction. At 400°C formation of Ni GaAs at the interface with GaAs was observed. After heat treatment at 600°C in vacuum a layered structure of TaAs/NiGa/GaAs has been formed. The NiGa layer has epitaxial relations to the GaAs substrate. The vertical phase separation can be explained by opposite diffusion directions of nickel and arsenic atoms.

Structure of CoxAg100-x and Its Relation to GMR

1992 ◽  
Vol 286 ◽  
Author(s):  
John Q. Xiao ◽  
J. Samuel ◽  
C. L. Chien
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Composition Range ◽  
Magnetic Scattering ◽  
Granular System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Co Concentration

ABSTRACTWe have studied the structure of the Co-Ag granular system across the entire composition range, as well as the annealed samples, using transmission electron microscopy (TEM) and x-ray diffraction. GMR, as much as 80% at 5K and 25% at room temperature, have been observed. The absolute values of the resistivity (ρ) and the change of the resistivity (δρ) as functions of the magnetic Co concentration and the annealing temperature have been determined. A linear relation between δρ and I/rco, where rco is Co particle size, has been found. This result suggests that the magnetic scattering at the interfaces is crucial to GMR.

scholarly journals Влияние термообработки на свойства композитных кремний-углеродных анодов для литий-ионных аккумуляторов

2020 ◽  
Vol 46 (3) ◽  
pp. 14
Author(s):  
Е.В. Астрова ◽  
А.В. Парфеньева ◽  
А.М. Румянцев ◽  
В.П. Улин ◽  
М.В. Байдакова ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Diffraction Analysis ◽  
Annealing Temperature ◽  
Argon Atmosphere ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Lithium Alloys

The effect of annealing temperature in argon atmosphere on the ability of Si-C nanocomposites to reversibly insert lithium was investigated. It was found that the higher the annealing temperature during the formation of the composite, the lower is the capacitance of the electrode made from it. X-ray diffraction analysis and transmission electron microscopy reveal that the reason of the capacitance decrease is formation at T  1100°C of silicon carbide of cubic modification -SiC, inactive with respect to the formation of lithium alloys or intercalates.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

Solid-state reaction of Ru powder in molten AlxBi1−x

1990 ◽  
Vol 5 (4) ◽  
pp. 746-753 ◽  
Author(s):  
R. W. Johnson ◽  
C. M. Garland
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Alloy System ◽  
Reaction Cross ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Metal Solvent

We describe a low-temperature solid-state interdiffusion technique that allows reaction between spatially separated reacting species and its application in the Al–Ru alloy system. This technique uses a liquid-metal solvent (Bi) as a medium for the transfer of Al to the surface of Ru powder where reaction occurs with the formation of nanocrystalline AlxRu1−x product phases. X-ray diffraction measurements are used to follow the time and temperature dependence of the reaction. Cross-sectional transmission electron microscopy allows direct imaging of the growth and morphology of the AlxRu1−x product phases.

dLow Temperature of formation of Nickel Germanide by reaction of Nickel and Crystalline Germanium

2014 ◽  
Vol 1655 ◽  
Author(s):  
Fahid Algahtani ◽  
Patrick W Leech ◽  
Geoffrey K Reeves ◽  
Anthony S Holland ◽  
Mark Blackford ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Thermal Budget ◽  
X Ray ◽  
Transmission Electron ◽  
Van Der Pauw ◽  
Heated Stage

ABSTRACTThe formation of nickel germanide has been examined over a range of low temperatures (200-400 °C) in an attempt to minimize the thermal budget for the process. Cross-sectional Transmission Electron Microscopy (TEM) was used to determine the texture of the germanide layer and the morphology and constituent composition of the Ge/NiGe interface. The onset and completion of reaction between Ni and Ge were identified by means of a heated stage in combination with in-situ x-ray diffraction (XRD) measurements. The stages of reaction were also monitored using measurements of sheet resistance of the germanides by the Van der Pauw technique. The results have shown that the minimum temperature for the initiation of reaction of Ni and Ge to form NiGe was 225 °C. However, an annealing temperature > 275 °C was necessary for the extensive (and practical) formation of NiGe. Between 200 and 300 °C, the duration of annealing required for the formation of NiGe was significantly longer than at higher temperatures. The stoichiometry of the germanide was very close to NiGe (1:1) as determined using energy dispersive spectroscopy (EDS).

Structural Characterization of P-I-N Diode Superlattice Structures Grown on , , and Orientation Si Substrates

1991 ◽  
Vol 220 ◽  
Author(s):  
P. M. Adams ◽  
R. C. Bowman ◽  
V. Arbet-Engols ◽  
K. L. Wang ◽  
C. C. Ahn
Keyword(s):  
Electron Microscopy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Substrate Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Superlattice Structures ◽  
Strained Layer Superlattices

ABSTRACTP-I-N diodes whose intrinsic region consists of strained layer superlattices (SLS), separated by 40 nm Si spacers, have been grown by MBE on Si substrates with <100>, <110>, and <111> orientations. These structures have been characterized by x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). The dual periodicities in these structures produced unique XRD effects and the quality was highly dependent on substrate orientation. The <100> sample was in general free of defects, whereas the <110> and <111> specimens contained significant numbers of twins and dislocations.

Influences of Hydrogen on the Evolution of the Electrical Resistivity Of Ultra-Thin Sputtered Copper Films Measured in Real-Time

2002 ◽  
Vol 721 ◽  
Author(s):  
E. V. Barnat ◽  
P. -I. Wang ◽  
D. Nagakura ◽  
T. -M. Lu
Keyword(s):  
Electron Microscopy ◽  
Real Time ◽  
Hydrogen Atmosphere ◽  
Argon Atmosphere ◽  
Rate Of Change ◽  
Copper Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Electrical Resistivities

AbstractThe electrical resistivities of copper films sputtered in either argon or an argon-hydrogen atmosphere are measured in real time, during growth. The electrical resistivities for both cases are observed to be functions of the film's thickness, with the films grown in the hydrogen containing atmosphere possessing a resistivity of 4.5 +/- 0.2 μΩ-cm at 40 nm, lower than the resistivity of 5.0 +/-0.3 μΩ-cm for 40 nm thick films grown in the argon atmosphere. Furthermore, the electrical resistivities for both sets of films were observed to continue to evolve after the termination of deposition. The amount of change and the rate of change were observed to depend on the film's thickness as well as atmosphere the films were grown in. Measurements made by X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate that the presence of hydrogen also influences the preferential crystallographic orientation as well as grain size distribution. These measurements indicate that the differences in the microstructure are correlated to the observed differences in the behavior of the electrical resistivities.

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