Effect of Processing Conditions on the Piezoelectric Properties of Sol-gel Derived Pb(Zr,Ti)O3 Films for Micromechanical Applications

2005 ◽  
Vol 20 (6) ◽  
pp. 1428-1435 ◽  
Author(s):  
J. Pérez ◽  
P.M. Vilarinho ◽  
A.L. Kholkin ◽  
J. Manuel Herrero ◽  
C. Zaldo
Keyword(s):  
Lead Zirconate Titanate ◽  
Annealing Temperature ◽  
Piezoelectric Properties ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Preparation Conditions ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Interface Effects

Lead zirconate titanate (PZT) films of composition close to the morphotropic phase boundary were deposited onto standard Si/SiO2/Ti/Pt substrates using a modified sol-gel process. The preparation conditions were optimized to obtain high-quality films at sufficiently low temperature (Ta - 500 °C). The dielectric, ferroelectric, and piezoelectric properties of the films were then measured as a function of the annealing temperature and the number of distillations to evaluate their suitability for micromechanical applications. The maximum values of the longitudinal charge and voltage piezoelectric coefficients were d33 ∼ 65 pm/V and g33 ∼ 4 × 10−3 Vm/N, respectively. The results indicate that the piezoelectric properties improved and became saturated with increasing number of distillations and are almost independent on Ta. Only moderate decrease of the piezoelectric response with frequency suggests that the investigated PZT films can be used in high-frequency piezoelectric applications. The results are discussed in terms of the microstructure and interface effects on the piezoelectric deformation in ferroelectric thin films.

Sol-Gel Derived PZT Thick Films with Nano-Sized Microstructure

2002 ◽  
Vol 748 ◽  
Author(s):  
C. L. Zhao ◽  
Z. H. Wang ◽  
W. Zhu ◽  
O. K. Tan ◽  
H. H. Hng
Keyword(s):  
Lead Zirconate Titanate ◽  
Electromechanical Coupling ◽  
Thick Films ◽  
Sol Gel ◽  
Essential Element ◽  
Processing Parameters ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Coupling Coefficients ◽  
Pzt Films

ABSTRACTLead zirconate titanate (PZT) films are promising for acoustic micro-devices applications because of their extremely high electromechanical coupling coefficients and excellent piezoelectric response. Thicker PZT films are crucial for these acoustic applications. A hybrid sol-gel technology has been developed as a new approach to realize simple and cost-effective fabrication of high quality PZT thick films. In this paper, PZT53/47 thick films with a thickness of 5–50 μm are successfully deposited on Pt-coated silicon wafer by using the hybrid sol-gel technology. The obtained PZT thick films are dense, crack-free, and have a nano-sized microstructure. The processing parameters of this technology have been evaluated. The microstructure of the film has been observed using field-emission scanning electron microscopy and the crystallization process has been monitored by the X-ray diffraction. The thick films thus made are good candidates for fabrication of piezoelectric diaphragm which will be an essential element of microspeaker and microphone arrays.

Fabrication of Thick, Sol Gel Pzt Films: Applications to Macroscopic Piezoelectric Devices

1994 ◽  
Vol 360 ◽  
Author(s):  
D.A. Barrow ◽  
T.E. Petroff ◽  
M. Sayer
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Low Frequency ◽  
Lead Zirconate ◽  
Resonant Vibrations ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
High Frequency Resonance ◽  
Piezoelectric Devices

AbstractLead zirconate titanate (PZT) films of up to 60 μm in thickness have been fabricated on a wide variety of substrates using a new sol gel process. The dielectric properties (∈ = 900), ferroelectric (Ec = 16 kV/cm and Pr = 35 μC/cm 2) and piezoelectric properties are comparable to bulk values. The characteristic Curie point of these films is at 420 °C. Piezoelectric actuators have been developed by depositing thick PZT films on both planar and coaxial substrates. Stainless steel cantilevers and optical fibres coated with a PZT film exhibit flexure mode resonant vibrations observable with the naked eye. A low frequency in-line fibre optic modulator has been developed using a PZT coated optical fibre. The high frequency resonance of a 60 μm film on a aluminum substrate has been observed.

Mechanical and Piezoelectric Properties of PZT Nanofibers

2009 ◽  
Author(s):  
Shiyou Xu ◽  
Yong Shi
Keyword(s):  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Electrospinning Process ◽  
Bending Test ◽  
Piezoelectric Response ◽  
Three Point Bending ◽  
Atomic Force ◽  
Average Grain Size

This paper reports the measurement of the mechanical and piezoelectric properties of Lead Zirconate Titanate (PbZr52Ti48O3, PZT) nanofibers. Partially aligned PZT nanofibers were fabricated by sol-gel electrospinning process. The diameters of the fiber were tuned from 50 to 150 nm by changing the concentration of the sol-gel in the precursor. The fiber consists of nanocrystal grains with average grain size of 10 nm. The Young’s modulus of individual fiber was obtained by nanoscale three-point bending using Atomic Force Microscope (AFM), which was 42.99GPa. Titanium strip was used as the substrate to collect the nanofibers for the three-point bending test to measure the piezoelectric response. The output voltages from the nanofibers under different strain were recorded by Labview, and the highest value of the output voltage was 0.17±0.005V. These results have shown that PZT nanofibers have great potential in nano sensor and actuator applications.

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O3 Films on Silicon Wafers

2007 ◽  
Vol 280-283 ◽  
pp. 239-242 ◽  
Author(s):  
Wen Gong ◽  
Xiang Cheng Chu ◽  
Jing Feng Li ◽  
Zhi Lun Gui ◽  
Long Tu Li
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Silicon Wafers ◽  
Seeding Layer ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films

Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary were deposited on silicon wafers by using a modified sol-gel method. Introducing a seeding layer between the interface of PZT film and platinum electrode controlled the texture of PZT films. The lead oxide seeding layer results in highly (001)-textured PZT film, while the titanium dioxide seeding layer results in (111)-textured one. SEM and XRD were used to characterize the PZT thin films. The ferroelectric and piezoelectric properties of the PZT films were evaluated and discussed in association with different preferential orientations.

Thickness Dependence of the Electrical Properties of Sol-Gel Derived Lead Zirconate Titanate Thin Films with (111) and (100) Texture

1997 ◽  
Vol 493 ◽  
Author(s):  
F. Chu ◽  
F. Xu ◽  
J. Shepard ◽  
S. Trolier-McKinstry
Keyword(s):  
Dielectric Constant ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Critical Thickness ◽  
Piezoelectric Properties ◽  
Sol Gel ◽  
Precursor Solution ◽  
Lead Zirconate ◽  
Thickness Dependence ◽  
Pzt Films

ABSTRACTCrack-free (111) and (100)-textured Pb(Zr0.52Ti0.48)O3 films with thicknesses ranging from 0.25 to 2.5 μm were prepared using a methoxyethanol-based precursor solution, multiple spin-coating and multiple crystallization steps. The thickness dependence of the dielectric, ferroelectric and piezoelectric properties were investigated on both (111) and (100) oriented PZT films. In both cases, the degree of preferred orientation did not change with thickness. It is found that the dielectric constant, remanent polarization and piezoelectric coefficients (d33 and d31) increase with increasing film thickness. The (100)-textured film showed higher dielectric constant but lower remanent polarization relative to (111) textured film. 1 μm was identified to be a critical thickness that marks the change of dielectric, ferroelectric and piezoelectric behaviors as a function of thickness.

PIEZOELECTRIC PROPERTIES OF PZT FILMS PREPARED BY HYDROTHERMAL METHOD

2006 ◽  
Vol 20 (25n27) ◽  
pp. 3805-3810 ◽  
Author(s):  
NOBUYOSHI FUJIWARA ◽  
KAZUHIRO KUSUKAWA ◽  
KHAIRUNISAK ABDUL RAZAK ◽  
WEI GAO
Keyword(s):  
Hydrothermal Method ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Compressive Loading ◽  
Pure Titanium ◽  
Lead Zirconate ◽  
Loading Frequency ◽  
X Ray Diffraction ◽  
Pzt Films ◽  
Transverse Effect

Lead zirconate titanate (PZT) thin films of 5 μm thick were produced by a hydrothermal method on pure titanium substrates. ZrOCl 2-8 H 2 O , Pb ( NO 3)2 and TiO 2 were used as precursors and KOH as a promoter. The hydrothermal synthesis of PZT includes nucleation and crystal growth processes at 120°C or 140°C. The crystallization states were investigated by using scanning electron microscopy and X-Ray diffraction. Piezoelectric properties were evaluated from unimorph cantilever type actuators made of the films. The relationships between the deflection of the actuator due to piezoelectric transverse effect and applied electric field in the direction of thickness of the films showed good linearity. The output voltage from the films under cyclic compressive loading increased with increasing loading frequency, and is saturated at 10 Hz. The PZT films produced by the present methods are satisfactory as a smart material, and are better than the films produced using TiCl 4 as Ti precursor.

Relationships Between Microstructure and Reliability in Pzt Mems

2001 ◽  
Vol 666 ◽  
Author(s):  
B.W. Olson ◽  
L.M. Randall ◽  
C.D. Richards ◽  
R.F. Richards ◽  
D.F. Bahr
Keyword(s):  
Grain Size ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Electrical Energy ◽  
Lead Zirconate ◽  
Fatigue Tests ◽  
Operating Conditions ◽  
Processing Route ◽  
Bulge Testing ◽  
Sol Gel Process

ABSTRACTPiezoelectric oxide films, such as lead zirconate titanate (PZT), are now being integrated into MEMS applications. Many PZT derived systems are deposited using a sol-gel process, which can be used in a microelectronics processing route using spin coating as the deposition method. An application of interest for PZT films is in power generation, where a flexing membrane is used to transform mechanical to electrical energy. The current study was undertaken to identify the relationships between the processing, microstructure, and mechanical reliability of these films. Films were deposited onto both monolithic and bulk micromachined platinized silicon wafers using standard sol-gel chemistries, with roughness and grain size tracked using electron and scanning probe microscopy. Mechanical properties were evaluated in a dynamic bulge testing apparatus. Grain size variations in the Pt film between 35 and 125 nm are shown to have little effect on grain size of the subsequent PZT film and the adhesion of the PZT to the Pt film. Only the Pt film with 125 nm grains was shown to undergo any significant interfacial fracture. Fatigue tests suggest film lifetime is primarily limited by the number of pre- existing flaws in the film from processing. Reducing the microcrack density has been shown to produce films and devices that fail at strains of 1.4% and have mechanical fatigue lifetimes in excess of 100 million cycles at strains simulating the operating conditions.

Intermetallic Formation in PZT for MEMS Structures

2012 ◽  
Vol 1427 ◽  
Author(s):  
Kanu priya Sharma ◽  
Thomas Oseroff ◽  
Leda Lunardi
Keyword(s):  
Electron Microscopy ◽  
Lead Zirconate Titanate ◽  
Surface Film ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Mems Devices ◽  
Aging Effects ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Pzt Films

ABSTRACTCrack free lead zirconate titanate (PZT) films for piezoelectric based MEMS devices have been prepared by a multiple coating sol gel process on platinized silicon (100) substrates. Rapid thermal annealing and Conventional furnace annealing were used for densification and crystallization of the amorphous PZT films. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM) and Atomic force microscopy (AFM) were used to observe surface film morphology and grain growth. The phase content of the films was analyzed using X-ray diffraction. The role of intermetallics formed during the heat treatment in the growth of different orientations has also been observed. Film aging critical for device performance has been observed and methods to revert aging effects have been examined and discussed.

Electrical and Optical Properties of Sol-Gel Processed Pb(Zr,Ti)o3 Films

1992 ◽  
Vol 271 ◽  
Author(s):  
S. D. Ramamurthi ◽  
S. L. Swartz ◽  
K. R. Marken ◽  
J. R. Busch ◽  
V. E. Wood Battelle
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Optical Characterization ◽  
Solvent System ◽  
Processing Parameters ◽  
Lead Zirconate ◽  
Electrical And Optical Properties ◽  
Annealing Conditions ◽  
Electro Optic ◽  
Pzt Films

ABSTRACTLead-zirconate-titanate, Pb(Zr0.53Ti0.47)O3, films were produced by the sol-gel method from alkoxide and acetate precursors in a 2-methoxyethanol solvent system. The PZT films were deposited on platinized silicon and single-crystal SrTiO3 substrates for electrical and optical characterization, respectively. The processing parameters, especially excess PbO content and annealing conditions, were shown to have a significant effects on the properties of PZT films. Epitaxial PZT films deposited on SrTiO3 waveguided over 10 mm distances with propagation losses as low as 5.9 dB/cm at 783 nm and a linear electro-optic effect was also demonstrated.

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