TI-X Alloy Composition Modulated Layered Structures

1986 ◽  
Vol 77 ◽  
Author(s):  
A. F. Jankowski ◽  
R. O. Adams ◽  
L. Williams
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Physical Vapor Deposition ◽  
Deposition Process ◽  
Beta Phase ◽  
Layered Structures ◽  
X Ray Diffraction ◽  
Alumina Crucible ◽  
Alloy Series

ABSTRACTThe binary alloy series of Ti-X metallic, composition modulated layered structures has been fabricated via magnetron sputtering. The Ti-X systems (where X is Ta, Mo, or V) explored are exemplary of solid solution systems, such as the supermodulus systems of Cu-Ni, Ag-Pd, Au-Ni, and Cu-Pd (which all feature fee crystalline compatibility). In the present case, the beta-phase of Ti sought in these Ti-X systems suggests bec crystalline compatibility, with interlayer misfit strains not exceeding 10%.The Ti-X series examined, matches elements of high and low atomic number. (Z of Ti, V, Mo, and Ta are 22, 23, 42, and 73, respectively.) Difficulties which arise in a conventional tungsten basket - alumina crucible physical vapor deposition process, i.e. obtaining thr vaporization temperatures for Ti, V, Mo and Ta of 1235, 1332, 1822, and 2240 °C at 130 mPa, respectively, are overcome by magnetron sputtering. Thin films produced by alternate deposition of Ti with V, Mo, or Ta, are desired with individually unique, regular repeating layer thicknesses which range from 1.5 to 15 nm.An initial characterization of the Ti-X composition modulated alloys has been conducted using X-ray diffraction. The pole figure constructions of the various composition wavelengths give a qualitative look at the strain accomodation within the thin films and possible manifestations in mechanical properties.

Production and Characterization of Carbon Thin Films by the Magnetron Sputtering Technique

2016 ◽  
Vol 881 ◽  
pp. 471-474 ◽  
Author(s):  
D.L.C. Silva ◽  
L.R.P Kassab ◽  
J.R. Martinelli ◽  
A.D. Santos ◽  
M.F. Pillis
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Magnetron Sputtering ◽  
Carbon Film ◽  
Carbon Films ◽  
Buffer Layers ◽  
Degree Of Crystallinity ◽  
X Ray Diffraction ◽  
Carbon Thin Films

Carbon thin films were produced by the magnetron sputtering technique. The deposition of the carbon films was performed on Co buffer-layers previously deposited on c-plane (0001) sapphire substrates. The samples were thermally treated under vacuum conditions and characterized by Raman spectroscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The XRD peak related to the carbon film was observed and the Raman spectroscopy indicated a good degree of crystallinity of the carbon film.

Deposition and characterization of AlN thin films obtained by radio frequency reactive magnetron sputtering

2014 ◽  
Vol 92 (7/8) ◽  
pp. 940-942 ◽  
Author(s):  
M.V. Pelegrini ◽  
M.A. Alvarado ◽  
M.I. Alayo ◽  
I. Pereyra
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Rutherford Backscattering Spectrometry ◽  
Pure Aluminum ◽  
Gaseous Mixture ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Aluminum nitride (AlN) thin films were deposited by reactive radio frequency magnetron sputtering from pure aluminum target, onto Si (100), ultra dense flat carbon, and quartz. Series of samples were obtained varying the Ar and N2 gaseous mixture. The characterizations performed were Fourier transform infrared (FTIR), X-ray diffraction, high resolution transmission electron microscopy, visible optical absorption, Rutherford backscattering spectrometry, and residual stress measurements by Stoney’s equation. In this paper we report on the Ar/N2 ratio needed to produce preferential (002) AlN growth. Correlations between X-ray diffraction and FTIR are made for highly oriented (002) AlN films.

scholarly journals The phase, morphology and surface characterization of Ti–Mo alloy films prepared by magnetron sputtering

RSC Advances ◽  
2017 ◽  
Vol 7 (83) ◽  
pp. 52595-52603 ◽  
Author(s):  
Gang Liu ◽  
Yanqing Yang ◽  
Xian Luo ◽  
Bin Huang ◽  
Pengtao Li
Keyword(s):  
Magnetron Sputtering ◽  
Particle Bombardment ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Surface Characterization ◽  
Deposition Process ◽  
Phase Morphology ◽  
Physical Vapor Deposition Process ◽  
Vapor Deposition Process

Magnetron sputtering is a physical vapor deposition process which allows the formation of metastable materials because of the particle bombardment process.

Characterization of Rutile N-Doped TiO2 Films Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 543 ◽  
pp. 277-280
Author(s):  
Marius Dobromir ◽  
Alina Vasilica Manole ◽  
Simina Rebegea ◽  
Radu Apetrei ◽  
Maria Neagu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rutile Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposited Films

Rutile N-doped TiO2thin films were grown by RF magnetron sputtering on amorphous and crystalline substrates at room temperature. The surface elemental analysis, investigated by X-ray photoelectron spectroscopy indicated that the nitrogen content of the films could be adjusted up to values as high as 4.1 at.%. As demonstrated by the X-ray diffraction data, the as-deposited films (100 200 nm thick) showed no detectable crystalline structure, while after successive annealing in air for one hour at 400°C, 500°C and 600°C, the (110) rutile peaks occurred gradually as dominant features. The rutile phase in the films was confirmed by the band gap values of the deposited materials, which stabilized at 3.1 eV, for the thin films having 200 nm thicknesses.

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Characterization of Ti–Zr–V thin films deposited by DC and unipolar pulsed DC magnetron sputtering

Vacuum ◽  
2021 ◽  
Vol 188 ◽  
pp. 110200
Author(s):  
Sihui Wang ◽  
Wei Wei ◽  
Yonghao Gao ◽  
Haibin Pan ◽  
Yong Wang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Pulsed Dc ◽  
Pulsed Dc Magnetron Sputtering

scholarly journals Epitaxial growth and characterization of Cu thin films deposited on Al2O3(0001) substrates by magnetron sputtering

2021 ◽  
pp. 130119
Author(s):  
Ik-Jae Lee ◽  
Hee Seob Kim ◽  
Young Duck Yun ◽  
Seen-Woong Kang ◽  
Hyo-Yun Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Epitaxial Growth

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

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