Characteristics of a phosphorus-doped p-type ZnO film by MBE

2005 ◽  
Vol 892 ◽  
Author(s):  
Faxian Xiu ◽  
Zheng Yang ◽  
Mandalapu J. Leelaprasanna ◽  
Jianlin Liu
Keyword(s):  
Hole Concentration ◽  
Substrate Surface ◽  
Hole Mobility ◽  
Effusion Cell ◽  
X Ray Diffraction ◽  
Pl Spectra ◽  
Hall Effect Measurements ◽  
Acceptor Energy Level ◽  
P Type ◽  
Phosphorus Doped

AbstractA solid-source GaP effusion cell was used to provide phosphorus dopants to achieve p-type ZnO with molecular-beam epitaxy (MBE). Room temperature (RT) Hall-effect measurements reveal that phosphorus-doped ZnO has a strong p-type conduction with a hole concentration of 6.5×1018 cm-3 and a hole mobility of 9.0 cm2/V s. X-ray diffraction measurements show a preferential growth orientation along <11-20> by θ-2θ scan and a tilt of ZnO (11-20) plane relative to the substrate surface by rocking curve and reciprocal space map. Photoluminescence (PL) spectra at 8.5 K show a dominant acceptor-bound exciton emission at 3.319 eV. The acceptor energy level of the phosphorus dopant is calculated to be 0.18 eV above the valence band from PL spectra, which is consistent with the temperature dependence of PL measurements.

Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess

2003 ◽  
Vol 798 ◽  
Author(s):  
D. J. As ◽  
D. G. Pacheco-Salazar ◽  
S. Potthast ◽  
K. Lischka
Keyword(s):  
Optical Properties ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Growth Conditions ◽  
Rf Plasma ◽  
Electrical And Optical Properties ◽  
Carbon Doped ◽  
Cubic Gan ◽  
Hall Effect Measurements ◽  
P Type

ABSTRACTP-type doping of cubic GaN by carbon is reported with maximum hole concentration of 2 6.1×1018cm-3and hole mobility of 23.5 cm /Vs at room temperature, respectively. The cubic GaN:C was grown by rf-plasma assisted molecular beam epitaxy (MBE) under Ga-rich growth conditions on a semiinsulating GaAs (001) substrate (3 inches wafer). E-beam evaporation of a graphite rode with an C-flux of 1×1012cm-2s-1was used for C-doping of the c-GaN. Optical microscopy, Hall-effect measurements and photoluminescence were performed to investigate the morphological, electrical and optical properties of cubic GaN:C. Under Ga-rich growth conditions most part of the carbon atoms were incorporated substitutially on N-site giving p-type conductivity. Our results verify that effective p-type doping of c-GaN can be achieved under extrem Ga excess.

Characterization of p-type 4H-SiC epitaxial layer grown on (11-20) substrate

2001 ◽  
Vol 680 ◽  
Author(s):  
Kazutoishi Kojima ◽  
Toshiyuki Ohno ◽  
Mituhiro Kushibe ◽  
Koh Masahara ◽  
Yuuki Ishida ◽  
...  
Keyword(s):  
Boron Concentration ◽  
Hole Mobility ◽  
Crystalline Quality ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hall Effect Measurements ◽  
P Type ◽  
Incorporation Efficiency

ABSTRACTGrowth and characterization of p-type 4H-SiC epitaxial layers grown on (11-20) substrates are reported. P-type 4H-SiC epilayers with smooth surface morphology have been grown on (11-20) substrates by low-pressure, hot-wall type CVD with SiH4–C3H8–H2–TMA system. The doping concentration can be controlled in the range from about 1×1016cm−3 to 1×1019cm−3. Anisotropy of the crystalline quality is observed by x-ray diffraction measurement. P-type epilayers, in which near band-gap emissions are dominated and D-A pair peak is not observed, are obtained. Hole mobility of (11-20) epilayers is smaller than that of (0001) epilayers probably due to the lack of crystalline quality compared to (0001) epilayers. The results of both low-temperature photoluminescence and the temperature dependence of Hall effect measurements indicate that the boron concentration as undoped impurity in (11-20) epilayer is lower than that of (0001) epilayer. This may be caused by the smaller incorporation efficiency of boron into (11-20) epilayer than that of (0001) epilayer.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

scholarly journals Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5339
Author(s):  
Lian Zhang ◽  
Rong Wang ◽  
Zhe Liu ◽  
Zhe Cheng ◽  
Xiaodong Tong ◽  
...  
Keyword(s):  
First Principles ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Nitrogen Vacancy ◽  
First Principle ◽  
Mg Doping ◽  
Limiting Condition ◽  
P Type

This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 × 1017/cm3 and 3 × 1019/cm3 with adjustable hole mobility from 3 to 16 cm2/V.s. These p-InGaN layers can meet different requirements of devices for hole concentration and mobility. First-principles defect calculations indicate that the p-type doping of InGaN at the N-rich limiting condition mainly originated from Mg substituting In (MgIn). In contrast with the compensation of nitrogen vacancy in p-type InGaN grown in a Ga-rich environment, the holes in p-type InGaN grown in an N-rich environment were mainly compensated by interstitial Mg (Mgi), which has very low formation energy.

scholarly journals Investigation of spray pyrolyzed cubic structured Cu doped SnS films

2021 ◽  
Author(s):  
Emrah SARICA
Keyword(s):  
Spray Pyrolysis Technique ◽  
Hole Concentration ◽  
Compressive Strain ◽  
Cubic Phase ◽  
Cu Doping ◽  
Glass Substrates ◽  
High Electrical Resistivity ◽  
Hall Effect Measurements ◽  
P Type ◽  
Deposited Films

Abstract In this work undoped and Cu doped SnS film at 4% and 8% were deposited onto glass substrates by spray pyrolysis technique in order to investigate the effect of Cu doping on their physical properties. Surface investigations showed that Cu doping reduced the surface roughness of SnS films from 36.5 nm to 8.8 nm. XRD studies revealed that all films have recently solved large cubic phase of SnS (p-SnS) with a- lattice of 11.53 Å and Cu doping led to reduction in crystallite size from 229 Å to 198 Å. Additionally, all deposited films were found to be under compressive strain. Optical band gaps of SnS:Cu varied in the range of 1.83 eV-1.90 eV. Hall-effect measurements exhibited that all film have p-type conductivity with low hole concentration (~10 11 -10 12 cm -3 ) and high electrical resistivity (~10 4 -10 5 Ωcm).

scholarly journals Energy band diagram of In2O3/ Si heterojunction

2011 ◽  
Vol 8 (2) ◽  
pp. 581-587
Author(s):  
Baghdad Science Journal
Keyword(s):  
Energy Band ◽  
Energy Band Diagram ◽  
Band Diagram ◽  
X Ray Diffraction ◽  
Flash Evaporation ◽  
Tunneling Diode ◽  
Conductivity Increase ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

Crystalline In2O3 Thin films have been prepared by flash evaporation. We have studied the crystal structure of as deposited at 303K and annealed at 523K using X-ray diffraction. The Hall Effect measurements confirmed that electrons were predominant charges in the conduction process (i.e n-type).It is found that the absorption coefficient of the prepared films decreases with increasing Ta. The d.c conductivity study showed that the conductivity increase with increasing Ta , whereas the activation energy decreases with increasing Ta. Also we study the barrier tunneling diode for In2O3/Si heterostructure grown by Flash evaporation technique. (capacitance-voltage C-V) spectroscopy measurements were performed at 303 K and at the annealing temperature 523K. The built in voltage has been determined and it depends strongly on the annealing process of the heterojunction. From all above measurements we assumed an energy band diagram for In2O3 /Si(P-type) heterojunction.

CRYSTAL STRUCTURE AND PROPERTIES OF CU-AL-O THIN FILMS

2002 ◽  
Vol 16 (01n02) ◽  
pp. 308-313 ◽  
Author(s):  
YUE WANG ◽  
HAO GONG ◽  
LING LIU
Keyword(s):  
Thin Films ◽  
Transparent Conducting Oxide ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Transparent Conducting ◽  
Potential Applications ◽  
Metal Organic ◽  
Hall Effect Measurements ◽  
Organic Precursors ◽  
P Type

P-type transparent conducting oxide thin films have attracted much attention due to their potential applications in novel transparent p-n junction devices. In this work, the transparent conducting Cu-Al-O thin films were prepared by the plasma enhanced chemical vapor deposition using metal organic precursors of Cu(acac) 2 and Al(acac) 3 (acac=acetylacetonate) while the substrate temperature was varied from 700 to 800°C. The x-ray diffraction and SEM results are analyzed to investigate the structure of the as-deposited and annealed films. The films contain metal copper and small grains of CuAlO 2. After annealing, metal copper turned into CuO . Hall effect measurements reveal that these films are p-type semiconductors and the film conductivity increased with the growth temperature.

Nitrogen-Doping Induced Optical Bandgap Widening of P-Type Cu2O Flms

2009 ◽  
Vol 1217 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Shu Saeki ◽  
Takeshi Morikawa
Keyword(s):  
Photoelectron Spectroscopy ◽  
Structural Changes ◽  
Optical Bandgap ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
N Doping ◽  
Hall Effect Measurements ◽  
Optical Bandgap Energy ◽  
P Type

AbstractWe have investigated the effect of N doping into Cu2O films deposited by reactive magnetron sputtering. With increasing N-doping concentration up to 3 at.%, the optical bandgap energy is enlarged from ˜2.1 to ˜2.5 eV with retaining p-type conductivity as determined by optical absorption and Hall-effect measurements. Additionally, photoelectron spectroscopy in air measurements shows an increase in the valence and conduction band shifts with N doping. These experimental results demonstrate possible optical bandgap widening of p-type N-doped Cu2O films, which is a phenomenon that is probably associated with significant structural changes induced by N doping, as suggested from x-ray diffraction measurements.

Phosphorus-Doped p-Type ZnS Nanowires and their Photodetecting Applications Based on Device Construction

2016 ◽  
Vol 42 ◽  
pp. 65-72 ◽  
Author(s):  
Xi Wei Zhang ◽  
Dan Hu ◽  
Dan Meng ◽  
Zhen Jie Tang ◽  
Zhi Wang
Keyword(s):  
High Performance ◽  
Uv Light ◽  
Hole Concentration ◽  
Chemical Deposition ◽  
Core Shell ◽  
Light Illumination ◽  
Chemical Deposition Method ◽  
P Type ◽  
Phosphorus Doped ◽  
Type Conduction

Phosphorus-doped p-type ZnS NWs were synthesized by chemical deposition method. The as-synthesized NWs shows obvious p-type conduction with a hole concentration of 8.35 × 1017 cm-3. ZnS-Si core-shell nanoheterojunction was fabricated by depositing Si thin film on the surface of ZnS NWs through a sputtering method. The core-shell nanostructure exhibited excellent photoresponse to white light and UV light. Under UV light illumination, a high performance with a responsibility of ~ 0.14 × 103 AW-1, a gain of ~ 0.69 × 103 and a detectivity of ~ 1.2 × 1010 cmHz1/2W-1 were obtained based on the ZnS-Si core-shell nanoheterojunction. This new nanostructure is expected to play an important role in the next-generation optoelectronic devices.

Formation and Characteristics of CoSi2 Layers Synthesized by Mevva Implantation

1996 ◽  
Vol 438 ◽  
Author(s):  
S. P. Wong ◽  
Qicai Peng ◽  
W. Y. Cheung ◽  
W. S. Guo ◽  
J. B. Xu ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Metal Vapor ◽  
Vacuum Arc ◽  
Strong Temperature Dependence ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Hall Effect Measurements ◽  
Large Peak ◽  
P Type

AbstractIon beam synthesis of CoSi2 layers in Si by MEVVA (Metal Vapor Vacuum Arc) implantation has been performed under various conditions. The formation and characteristics of these CoSi2 layers have been studied by XTEM, RBS, AFM, X-ray diffraction, ellipsometry, electrical and Hall effect measurements. It was found that a higher substrate temperature during implantation results in an as-implanted Co distribution closer to the surface and hence the formation of a shallower CoSi2 layer after annealing. Buried CoSi2 layers of good crystal quality and low resistivity CoSi2 can be formed by MEVVA implantation and annealing under appropriate conditions. A strong temperature dependence of the Hall coefficient showing a large peak at around 100K was observed for the CoSi2 layers formed in p-type Si substrates but not in n-type substrates. The properties and their dependence on the processing conditions, in particular, the substrate temperature during implantation, are presented and discussed.

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