Poly-Si TFTs From Glass to Plastic Substrates: Process and Manufacturing Challenges

2004 ◽  
Vol 814 ◽  
Author(s):  
F. Lemmi ◽  
S. Lin ◽  
B.C. Drews ◽  
A. Hua ◽  
J.R. Stern ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Annealing ◽  
Gate Dielectric ◽  
Film Stress ◽  
Superior Performance ◽  
Excimer Laser Annealing ◽  
Active Matrix ◽  
Plastic Substrates ◽  
Active Matrix Displays ◽  
Automated Tools

AbstractPoly-Si Thin-Film Transistors (TFTs) are currently used in commercial active-matrix displays. They provide superior performance with respect to their amorphous silicon counterparts and allow integration of driving electronics directly on the display glass plates.For several applications, it can be desirable to have active-matrix displays made on flexible substrates. However, a direct application of a standard TFT process to plastic substrates is not in general possible, mostly because of temperature limits and related dimensional stability issues. In addition, standard flat-panel manufacturing tools are not capable of automatically handling non-rigid floppy substrates.Therefore, a new process has to be developed, compatible with a suitable way of handling plastic substrates. A process was developed in which plastic sheets are laminated on glass carrier wafers and run through all the automated tools. A low-temperature process using excimer laser annealing is developed and optimized. High-quality TFT backplanes are manufactured with a pixel layout designed for active-matrix OLED (AMOLED) displays. Field-effect mobility in excess of 70 cm2Vs on p-channel TFTs are achieved, together with leakage currents lower than 2 pA per micron gate width.Challenges include low-temperature gate dielectric development, reduction of intrinsic film stress, protection of plastic from laser damage, and contact formation. Solutions to these challenges are discussed and TFT transfer characteristics on glass and plastic substrates are presented. Finally, images from prototype monochrome AMOLED displays are presented, with 64 × 64 pixels and 80-dpi resolution.

Effect of Excimer Laser Annealing on Ultra-low Temperature Gate Dielectrics

2001 ◽  
Vol 685 ◽  
Author(s):  
Wonsuk Chung ◽  
Michael O. Thompson
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Gate Dielectrics ◽  
Chemical Vapor ◽  
Leakage Currents ◽  
Excimer Laser Annealing ◽  
Plastic Substrates ◽  
Silicon Melt ◽  
Multiple Shot

AbstractThe effect of excimer laser annealing on the properties of ultra-low temperature (150°C) plasma enhanced chemical vapor deposited (PECVD) oxides was investigated. Annealing was performed using a 308 nm excimer laser incident directly on the oxides, at fluences up to the melting of the silicon and for as many as 3000 pulses. Following multiple shot irradiations below the silicon melt threshold, the CV threshold voltage was observed to decrease by ≍15V volts, coupled with an increase in the slope near threshold. Leakage currents measured by IV were not significantly changed. Property modifications are shown to be comparable to a 450°C thermal soak anneal. These results suggest that excimer laser annealing has potential to improve ultra-low temperature gate dielectrics for poly-Si Thin Film Transistors (TFTs) on plastic substrates.

scholarly journals Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Shinku ◽  
2000 ◽  
Vol 43 (12) ◽  
pp. 1120-1125 ◽  
Author(s):  
Naoto MATSUO ◽  
Hisashi ABE ◽  
Naoya KAWAMOTO ◽  
Ryouhei TAGUCHI ◽  
Tomoyuki NOUDA ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Energy Density ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shot Number

Electrical/Optical Properties of Thin Transparent Oxide Films Deposited Using DC Magnetron Sputtering

2004 ◽  
Vol 449-452 ◽  
pp. 989-992
Author(s):  
Byung Soo So ◽  
Sung Moon Kim ◽  
Young Sin Pyo ◽  
Young Hwan Kim ◽  
Jin-Ha Hwang
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Excimer Laser ◽  
Indium Tin Oxide ◽  
Laser Annealing ◽  
Dc Magnetron Sputtering ◽  
Excimer Laser Annealing ◽  
Plastic Substrates ◽  
Ito Thin Films

Amorphous indium tin oxide (ITO) thin films were grown on plastic substrates, PES (polyethersulfone) using low temperature DC magnetron sputtering. Various post-annealing techniques are attempted to optimize conductivity, transmittance, and roughness: i) conventional thermal annealing, ii) excimer laser annealing, and iii) UV irradiation. The electrical/optical properties were measured using Hall-measurement, DC 4-point resistance measurement, and UV spectrometry along with micro-structural characterization. Optimized UV treatment exhibits enhanced conductivity and smooth surface, compared to those of conventional thermal annealing and excimer laser annealing.

Ultra-Low Temperature Poly-Si Thin Film by Excimer Laser Recrystallization For Flexible Substrates

2003 ◽  
Vol 769 ◽  
Author(s):  
Sang-Myeon Han ◽  
Min-Cheol Lee ◽  
Su-Hyuk Kang ◽  
Moon-Young Shin ◽  
Min-Koo Han
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Inductively Coupled Plasma ◽  
Laser Annealing ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Plastic Substrate ◽  
Excimer Laser Annealing ◽  
Plasma Chemical Vapor Deposition ◽  
Laser Recrystallization

AbstractAn ultra-low temperature (< 200°C) polycrystalline silicon (poly-Si) film is fabricated for the plastic substrate application using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing. The precursor active layer is deposited using the SiH4/He mixture at 150°C (substrate). The deposited silicon film consists of crystalline component as well as hydrogenated amorphous component. The hydrogen content in the precursor layer is less than 5 at%. The grain size of the precursor active silicon film is about 200nm and it is increased up to 500nm after excimer laser irradiation.

Monocrystalline Si Films from Transfer Processes for Thin Film Devices

2001 ◽  
Vol 685 ◽  
Author(s):  
Ralf B. Bergmann ◽  
Christopher Berge ◽  
Titus J. Rinke ◽  
Jürgen H. Werner
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Defect Density ◽  
Silicon On Insulator ◽  
Active Matrix ◽  
Plastic Substrates ◽  
Light Point ◽  
Single Host ◽  
Active Matrix Displays ◽  
Si Films

AbstractThe transfer of thin monocrystalline silicon films to foreign substrates is of great interest for a number of applications such as silicon on insulator devices, active matrix displays and thin film solar cells. We present a transfer approach for the fabrication of monocrystalline Si films on foreign substrates based on the formation ofquasi-monocrystallineSi-films. Our transfer approach is compatible with high temperature processing such as epitaxial growth at 1100°C, thermal oxidation and phosphorous diffusion. Reuse of Si host wafers is demonstrated by the subsequent epitaxial growth of three monocrystalline Si films on a single host wafer. Monocrystalline Si films with a thickness of 15 µm and a diameter of 3” are transferred to glass and flexible plastic substrates. The typical light point defect density in films transferred from virgin wafers ranges between 10 to 100 cm−2, while stacking fault and dislocation densities are ≤ 100 cm−2. The minority carrier diffusion length in the epitaxial Si films is around 50 µm.

Excimer Laser Annealing of PbZr0.4Ti0.6O3 Thin Film at Low Temperature

2006 ◽  
Vol E89-C (10) ◽  
pp. 1460-1464 ◽  
Author(s):  
W. XIANYU ◽  
H. S.-y. CHO ◽  
J. Y. KWON ◽  
H. YIN ◽  
T. NOGUCHI
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing
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