Comprehensive Study of Impact Ionization Coefficients of 4H-SiC
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AbstractThe electric field dependence and anisotropy of the impact ionization coefficients of 4H-SiC are investigated by means of the avalanche breakdown behavior of p+n diodes. The breakdown voltages as a function of doping density and the multiplication factors of a leakage current are obtained using p+n diode fabricated on (0001) and (1120) 4H-SiC epitaxial wafers. The obtained impact ionization coefficients show large anisotropy; the breakdown voltage of a p+n diode on (1120) wafer is 60% of that on (0001) wafer. We have shown that anisotropy of the impact ionization coefficients is attributable to the anisotropy of saturation velocity originated from the electronic structure of 4H-SiC.
2009 ◽
Vol 615-617
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pp. 311-314
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2020 ◽
Vol 92
(1)
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pp. 10301
2008 ◽
Vol 55
(6)
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pp. 1373-1378
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2021 ◽
pp. 1-1
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2006 ◽
Vol 20
(29)
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pp. 4929-4936
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2011 ◽
Vol 629
(1)
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pp. 154-156
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