Normally-off operation GaN HFET using a thin AlGaN layer for low loss switching devices

2004 ◽  
Vol 831 ◽  
Author(s):  
Nariaki Ikeda ◽  
Kazuo Kato ◽  
Jiang Li ◽  
Kohji Hataya ◽  
Seikoh Yoshida
Keyword(s):  
Metalorganic Chemical Vapor Deposition ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
The Novel ◽  
Algan Layer ◽  
Si Substrate ◽  
Low Loss ◽  
Gan Hfet ◽  
Gan Heterostructure ◽  
First Time

ABSTRACTWe report on the novel normally-off GaN-based heterojunction field effect transistors (HFETs) on a Si substrate. The AlGaN/AlN/GaN heterostructure was grown using a metalorganic chemical vapor deposition (MOCVD). The HFET for a normally-off operation was fabricated using a precisely controlled thin-AlGaN layer as an electron supply layer. As a result, the HFET was operated at the condition of the positive gate bias. We also characterized the enlarged gate-width devices. The breakdown voltage of FET was over 300 V. A normally-off operation using GaN based HFETs with a thin-AlGaN/AlN/GaN heterostructure on the silicon substrate were thus confirmed for the first time.

High Temperature Operation of A New Normally-Off AlGaN/GaN HFET on Si Substrate

2003 ◽  
Vol 798 ◽  
Author(s):  
Seikoh Yoshida ◽  
Jiang Li ◽  
Takahiro Wada ◽  
Hironari Takehara
Keyword(s):  
Metalorganic Chemical Vapor Deposition ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
The Novel ◽  
Si Substrate ◽  
Gan On Si ◽  
Gan Heterostructure ◽  
P Type ◽  
High Temperature Operation ◽  
First Time

ABSTRACTWe report on the novel normally-off AlGaN/p-type GaN heterojunction field effect transistors (HFETs). We grew the AlGaN/p-GaN heterostructure on p-type Si (111) substrate using a metalorganic chemical vapor deposition (MOCVD). A homogeneous buffer layer was first formed on a Si (111) substrate at 1123 K. After that, AlGaN (30 nm)/high resistive p-type GaN (500 nm) heterostructure was also grown at 1303 K without cracking. We fabricated an HFET using AlGaN/p-type GaN on Si substrate. The ohmic electrode material was Al/Ti/Au and the gate electrode was Pt/Au. The distance between the source and the drain was 0.01 mm. The gate length and width were 2000 nm and 0.15 mm, respectively. As a result, the HFET was operated at the condition of the positive gate bias. The pinch-off voltage was 0 V. A normally-off operation was thus confirmed for the first time. The breakdown voltage of FET was over 250 V. We also confirmed that the normally-off HFET was operated at 573 K for over 150 h.

Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth

1987 ◽  
Vol 102 ◽  
Author(s):  
P.-Y. Lu ◽  
L. M. Williams ◽  
C.-H. Wang ◽  
S. N. G. Chu ◽  
M. H. Ross
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Chemical Vapor Deposition Growth ◽  
Deposition Processes ◽  
Cdznte Substrates ◽  
First Time ◽  
Metalorganic Chemical

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.

Properties of the EL2 Level in Organometallic Ga1−xAlxAs

1987 ◽  
Vol 104 ◽  
Author(s):  
A. Ben Cherifa ◽  
R. Azoulay ◽  
G. Guillot
Keyword(s):  
Vapor Deposition ◽  
Deep Level Transient Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Electron Trap ◽  
Quenching Effect ◽  
Deep Electron Trap ◽  
Transient Spectroscopy ◽  
First Time

ABSTRACTWe have studied by means of deep level transient spectroscopy and photocapacitance measurements deep electron traps in undoped Ga1−xAlxAs of n-type grown by metalorganic chemical vapor deposition with 0≤x≤ 0.3. A dominant deep electron trap is detected in the series of alloys. Its activation energy is found at EC-0.8 eV in GaAs and it increases with x. Its concentration is found nearly independent of x. For the first time we observed for this level in the Ga1−xAlxAs alloys, the photocapacitance quenching effect typical for the EL2 defect in GaAs thus confirming clearly that EL2 is also created in MOCVD Ga1−xAlxAs.

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