In situ TEM Observations of Grain Growth in Nanograined Thin Films

2004 ◽  
Vol 854 ◽  
Author(s):  
K. Hattar ◽  
J. Gregg ◽  
J. Han ◽  
T. Saif ◽  
I. M. Robertson
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Elevated Temperatures ◽  
Critical Role ◽  
Grain Structure ◽  
In Situ Tem ◽  
Free Standing ◽  
Transmission Electron Microscopy Analysis ◽  
Cu Films

ABSTRACTIn situ transmission electron microscopy analysis is used to study the stability of nanograined and ultra-fine grained thin films at elevated temperatures. In the free-standing Au and Cu films, grain growth was dependent on annealing temperature and time with growth observed in both materials at temperatures greater than 373K. Both materials exhibited abnormal grain growth although it was more prevalent in Au than in Cu, which may be a consequence of pinning of the Cu grain boundaries by impurities. The formation and destruction of twins was observed to play a critical role in the grain growth, with the twins retarding the growth in gold, but not in Cu. In constrained Au films no grain growth was observed on annealing at temperatures below 636 K. At 636 K, the eutectic temperature, the microstructure transformed to the eutectic structure with the first stage being the annihilation of the grain structure.

Mechanisms of Grain Growth in Free-Standing Nanograined Gold Thin Films

2005 ◽  
Vol 907 ◽  
Author(s):  
J. A. Gregg ◽  
K Hattar ◽  
C H Lei ◽  
I M Robertson
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Structural Changes ◽  
Dislocation Slip ◽  
Free Standing ◽  
Transmission Electron ◽  
Enhanced Properties ◽  
Gold Thin Films ◽  
Annealing Experiments

AbstractRetention of the enhanced properties reported for nanograined metallic systems requires that the nanostructure be insensitive to temperature and deformation. In situ transmission electron microscopy annealing experiments were employed to investigate the structural changes associated with the formation of micron-sized grains in nanograined evaporated gold thin films. This abnormal grain growth occurs randomly throughout the film. Twinning but not dislocation slip occurs in the growing grains until the grain size is in the hundreds of nanometer range. The twins appear to hinder growth and for grain growth to continue the twins must either be annihilated or be able to grow with the grain concurrently.

In-Situ Tem Investigation During Thermal Cycling of thin Copper Films

1996 ◽  
Vol 436 ◽  
Author(s):  
R.-M. Keller ◽  
W. Sigle ◽  
S. P. Baker ◽  
O. Kraft ◽  
E. Arzt
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Copper Films ◽  
Stress Evolution ◽  
Cu Films ◽  
Transmission Electron ◽  
Insight Into

AbstractIn-situ transmission electron microscopy (TEM) was performed to study grain growth and dislocation motion during temperature cycles of Cu films with and without a cap layer. In addition, the substrate curvature method was employed to determine the corresponding stresstemperature curves from room temperature up to 600°C. The results of the in-situ TEM investigations provide insight into the microstructural evolution which occurs during the stress measurements. Grain growth occurred continuously throughout the first heating cycle in both cases. The evolution of dislocation structure observed in TEM supports an explanation of the stress evolution in both capped and uncapped films in terms of dislocation effects.

scholarly journals In situ TEM observations of thickness effect on grain growth in pure titanium thin films

2021 ◽  
Vol 173 ◽  
pp. 110929
Author(s):  
Chaogang Ding ◽  
Wanji Chen ◽  
Shima Sabbaghianrad ◽  
Jie Xu ◽  
Debin Shan ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Pure Titanium ◽  
Thickness Effect ◽  
In Situ Tem ◽  
Titanium Thin Films

In-situ TEM observations of abnormal grain growth, coarsening, and substrate de-wetting in nanocrystalline Ag thin films

2000 ◽  
Vol 370 (1-2) ◽  
pp. 54-62 ◽  
Author(s):  
Rand Dannenberg ◽  
E.A. Stach ◽  
J.R. Groza ◽  
B.J. Dresser
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Abnormal Grain Growth ◽  
In Situ Tem

An In-Situ Tem Study of the Dynamic Behavior of Domain Walls in a Free-Standing Lead Titanate Thin Film Under External Stress

1995 ◽  
Vol 404 ◽  
Author(s):  
S. B. Ren ◽  
C. J. Lu ◽  
H. M. Shen ◽  
Y. N. Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dynamic Behavior ◽  
Domain Walls ◽  
High Stress ◽  
Ferroelectric Thin Film ◽  
External Stress ◽  
In Situ Tem ◽  
Free Standing

AbstractThe evolution of domain structure with external stress in a free-standing PbTiO3 ferroelectric thin film of ˜100nm in thickness is observed by in-situ TEM technique. The thin film is composed of granular grains of ˜100nm in diameter, most of them appear to be single-domained whereas others are multi-domained showing domains of different sizes(5˜20nm). For some single-domained grains new domains appear during tension. For multi-domained grains, rearrangement of domain walls and coarsening of domains have been observed during tension. In many cases the domain walls disappear under high stress, i.e., a multi-domained grain changes into a single-domained grain. However, it is also observed that a large portion of single-domained grains appear not to respond to external stress. The dynamic behavior of domain walls in very thin ferroelectric thin films may help to understand the switching of these very thin films.

IN-SITU TEM INVESTIGATION ON NUCLEATION AND GROWTH BEHAVIOR OF P-DOPED Si THIN FILMS

2009 ◽  
Vol 23 (31n32) ◽  
pp. 3747-3751
Author(s):  
KYOU-HYUN KIM ◽  
JONG-HYUN SEO ◽  
SANG-WON YOON ◽  
KON-BAE LEE ◽  
JIN-HA WHANG ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Carrier Mobility ◽  
Nucleation And Growth ◽  
Growth Behavior ◽  
In Situ Tem ◽  
Si Nanocrystals ◽  
Lower Temperature ◽  
Phosphorus Doped

The nucleation and growth behaviors of undoped and phosphorus doped polycrystalline Si thin films were investigated by in-situ TEM observations. Polycrystalline Si thin films were partially changed to amorphous by ion implantations. A normal grain growth was observed in the undoped Si thin films during heating. On the other hand, the P -doped sample showed the recovery and growth at grain boundary as well as the nucleation of Si nanocrystals at amorphous regions. Although the amorphous hindered the grain growth and acted as the nucleation source of Si nanocrystals at lower temperature, the final grain size of polycrystalline Si at 650°C was larger in the P -doped sample. The carrier mobility of the P -doped Si thin films not only increased with heat treatments, but also was corresponding to the microstructural evolution.

scholarly journals TEM and SEM in-situ annealing of nanocrystalline copper thin films

2008 ◽  
Vol 14 (S3) ◽  
pp. 49-52 ◽  
Author(s):  
S. Simões ◽  
R. Calinas ◽  
P.J. Ferreira ◽  
F. Viana ◽  
M.T. Vieira ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Large Fraction ◽  
Structural Features ◽  
Nucleation And Growth ◽  
Coarse Grained ◽  
Mechanical Resistance ◽  
In Situ Tem ◽  
Nanocrystalline Metals

Materials mechanical resistance is known to depend on the size of structural features, accordingly to the familiar HallPetch equation. For the nanometer range of grain sizes, this relationship breaks down and a change of the grain size exponent is needed to satisfy this dependency. Nevertheless, the superior strength of the nanocrystalline material relays on the small dimension of its grains. Characterization of the thermal stability of these materials becomes relevant since a large fraction of atoms are in the grain boundaries and, as a result, its structure posses a large excess of energy that promotes grain growth. Grain growth in nanocrystalline metals has been observed well below the temperatures needed to promote grain growth in coarse grained materials; in some cases, even at room temperature. From this perspective, the study of grain growth in nanocrystalline metals is crucial for the development of new nanocrystalline materials with outstanding mechanical properties. There are many studies that propose models to explain the mechanism of nucleation and growth of annealing twins in F.C.C. materials. In-situ TEM and SEM techniques are invaluable for understanding and characterizing dynamic microstructural changes like nucleation and growth of grains and twins. This is an important observation because twinning affects the properties of materials and so is essential to comprehend the mechanism of twin formation. Other advantage of the in-situ TEM technique is the study of grain growth in ultra fine film with a thickness in the range of 50 to 100 nm. With these techniques, the mechanisms and kinetics of grain growth in nanocrystalline thin films can be observed and studied in real time.

Small Lead and Indium Inclusions in Aluminium

1991 ◽  
Vol 235 ◽  
Author(s):  
E. Johnson ◽  
K. Hjemsted ◽  
B. Schmidt ◽  
K. K. Bourdelle ◽  
A. Johansen ◽  
...  
Keyword(s):  
Melting Point ◽  
Elevated Temperatures ◽  
Supersaturated Solution ◽  
In Situ Tem ◽  
Initial Growth ◽  
Heating And Cooling ◽  
Moiré Fringes ◽  
The Matrix ◽  
Spontaneous Phase

ABSTRACTIon implantation of lead or indium into aluminium results in spontaneous phase separation and formation of lead or indium precipitates. The precipitates grow in topotactical alignment with the matrix, giving TEM images characterized by moiré fringes. The size and density of the precipitates increase with increasing fluence until coalescence begins to occur. Implantations at elevated temperatures lead to formation of larger precipitates with well developed facets. This is particularly significant for implantations above the bulk melting point of the implanted species. Melting and solidification have been followed by in-situ TEM heating and cooling experiments. Superheating up to ∼ 50 K above the bulk melting point has been observed, and the largest inclusions melt first. Melting is associated with only partial loss of facetting of the largest inclusions. Initial growth of the inclusions occurs by trapping of atoms retained in supersaturated solution. Further growth occurs by coalescence of neighbouring inclusions in the liquid phase. Solidification is accompanied by a strong undercooling ∼ 30 K below the bulk melting point, where the smallest inclusions solidify first. Solidification is characterized by spontaneous restoration of the facets and the topotactical alignment.

In-Situ Tem Study of Copper-Tin Intermetallic Formation

1993 ◽  
Vol 323 ◽  
Author(s):  
Yujing Wu ◽  
Elizabeth G. Jacobs ◽  
Cyrus Pouraghabagher ◽  
Russell F. Pinizzotto
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Diffusion Barrier ◽  
Solder Joints ◽  
Effective Diffusion ◽  
Copper Substrate ◽  
In Situ Tem ◽  
Intermetallic Formation ◽  
Intermetallic Growth

AbstractThe formation and growth of Cu6Sn5 and Cu3Sn at the interface of Sn-Pb solder/copper substrate are factors which affect the solderability and reliability of electronic solder joints. The addition of particles such as Ni to eutectic Sn-Pb solder drastically affects the activation energies of formation for both intermetallics. This study was performed to understand the mechanisms of intermetallic formation and the effects of Ni on intermetallic growth. Cu/Sn and Cu/Sn/Ni thin films were deposited by evaporation and observed in the TEM in real time using a hot stage. The diffusion of Sn through Cu6Sn5 and Cu3Sn followed by reaction with Cu must occur for intermetallic formation and growth to take place. Ni is an effective diffusion barrier which prevents Sn from diffusing into Cu.

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