Ferromagnetic Mn-Doped GaN Nanowires for Nanospintronics

2005 ◽  
Vol 877 ◽  
Author(s):  
Doo Suk Han ◽  
Chan Woong Na ◽  
Woo Sung Jang ◽  
Seung Yong Bae ◽  
Jeunghee Park
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Magnetization Curves ◽  
Temperature Dependent ◽  
Gan Nanowires ◽  
Ferromagnetic Hysteresis ◽  
Mn Doped ◽  
Temperature Dependent Magnetization

AbstractWe report Mn-doped GaN nanowires exhibiting ferromagnetism even at room temperature. The growth of single-crystalline wurtzite structured GaN nanowires doped homogeneously with about 5 atomic % Mn was achieved by chemical vapor deposition using the reaction of Ga/GaN/MnCl2 with NH3. The ferromagnetic hysteresis at 5 and 300 K and the temperature-dependent magnetization curves suggest the Curie temperature around 300 K. Negative magnetoresistance of individual nanowires was observed at the temperatures below 100 K.

scholarly journals Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Spectral Response ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Infrared Detection ◽  
Infrared Photodetectors ◽  
Bandgap Semiconductors ◽  
Low Dimensional

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

Room temperature observation of the correlation between atomic and electronic structure of graphene on Cu(110)

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98001-98009 ◽  
Author(s):  
Thais Chagas ◽  
Thiago H. R. Cunha ◽  
Matheus J. S. Matos ◽  
Diogo D. dos Reis ◽  
Karolline A. S. Araujo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Chemical Vapor Deposition ◽  
Scanning Tunneling Microscopy ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Observation ◽  
Atomic And Electronic Structure

We have used atomically-resolved scanning tunneling microscopy and spectroscopy to study the interplay between the atomic and electronic structure of graphene formed on copper via chemical vapor deposition.

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