Characterization of Ultrathin Cosi2 on Si(111) Layers.
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ABSTRACTUltrathin epitaxial CoSi2 films on Si(111) have been grown in ultrahigh vacuum by room temperature deposition of Co on Si(111) followed by a high temperature anneal at ~600°C. Characterization of the thin films with transmission electron microscopy has revealed pseudomorphic growth up to thicknesses ~30Å. Pinholes present in the pseudomorphic thin films are thought to prevent the trapping of dislocations within the film. A clear transition to films containing a regular network of misfit dislocations occurs at ~40Å. Evidence for the growth of CoSi2 via intermediate metal-rich silicide phases is observed.
Structural Evolution Upon Annealing of Multi-Layer Si/Fe Thin Films Prepared by Magnetron Sputtering
2007 ◽
Vol 561-565
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pp. 1161-1164
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pp. 694-698
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