Residual Stress in GaAs Layer Grown on 4°-Off (100)Si by MBE

1987 ◽  
Vol 91 ◽  
Author(s):  
T. Yao ◽  
Y. Okada ◽  
H. Kawanami ◽  
S. Matsui ◽  
A. Imagawa ◽  
...  
Keyword(s):  
Residual Stress ◽  
Tensile Stress ◽  
Gaas Layer ◽  
Residual Tensile Stress ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Misfit Stress ◽  
Si Substrates ◽  
Gaas Films ◽  
Semiconductor Laser Diodes

ABSTRACTResidual stress in molecular beam epitaxially (MBE) grown GaAs films on 4°-off (100)Si substrates is investigated with X-ray diffraction technique. It is experimentally confirmed that the GaAs lattice suffers tetragonal deformation with the c-axis being [100]. The GaAs lattice tilts by approximately 0.2° towards the tilted direction of the substrate. It is found that two-dimensional compressive stress dominates in GaAs films thinner than 0.3 μm in thickness, while two-dimensional tensile stress dominates in thicker films. The variation of the stress is understood in terms of a combination of misfit stress and thermal stress. The residual tensile stress is larger than 1 × 109 dyn/cm2 in the films thicker than I pm. The effect of the stress on the reliability of semiconductor laser diodes is discussed.

The Photoluminescence and TEM Studies of Patterned GaAs films on Si Substrate Grown by Molecular Beam Epitaxy

1988 ◽  
Vol 116 ◽  
Author(s):  
Henry P. Lee ◽  
Yi-He Huang ◽  
Xiaoming Liu ◽  
Hong Lin ◽  
John. S. Smith ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Uniaxial Stress ◽  
Luminescence Spectra ◽  
Residual Tensile Stress ◽  
Photoluminescence Intensity ◽  
Patterned Substrate ◽  
Si Substrates ◽  
Gaas Films ◽  
Patterned Films ◽  
Window Area

AbstractPatterned epitaxial GaAs films have been formed on Si substrates by either growth over patterned substrate (selective -area epitaxy) or chemical etching of patterns after growth. The optical properties of these samples are studied by 77K photoluminescence (PL) and the defect structures are investigated by transmission electron microscope (TEM). The patterned substrate consisted of bare Si stripes with width ranging from 10 µm to 100 µm surrounded by Si3N4 films on both sides and a reference area of bare Si. For 1.5 µmiann d 3 µm thick films, PL intensities from the films inside the 10 µm stripe shows 140% and 75% increase over unpatterned areas while the residual tensile stress in the patterned films is very similar to that of the unpatterned area. The increase in the photoluminescence intensity is ascribed to the reduction of crystalline defects inside the the window area. In the chemically etched sample, the pattern consisted of 4 µm by 4 µm squares and 1 mm long stripes with widths ranging from 100 µm to 4 plm. From the shift of PL peaks, a monotonic decrease in the tensile stress versus stripe width is observed. In particular, when the width of the stripe is less than 7 µm. tensile stress becomes essentially uniaxial in agreement with the results obtained by Yacobi et al [16] on a GaAs on InP sample. The polarization of the luminescence spectra parallel and perpendicular to the uniaxial stress of a 4 µm wide stripe agrees well with theoretical prediction. It is also observed that tensile stress is almost completely relieved in the 4 µm by 4 muentc hed squares.

Further Research Into Wheel Rim Axial Residual Stress and Vertical Split Rim Failures

2012 ◽  
Author(s):  
Cameron Lonsdale ◽  
John Oliver
Keyword(s):  
Residual Stress ◽  
Tensile Stress ◽  
Stress Profile ◽  
Residual Tensile Stress ◽  
X Ray Diffraction ◽  
X Ray ◽  
Wheel Rim ◽  
Axial Tensile ◽  
Axial Residual Stress ◽  
Class C

Recent work using x-ray diffraction techniques has shown that the axial residual stress pattern within the railroad wheel rim is significantly different for as-manufactured AAR Class C wheels vs. AAR Class C wheels that have failed due to a vertical split rim (VSR), and non-failed AAR Class C wheels that have been operating in service. VSRs almost always begin at areas of tread damage, resulting from shelling or spalling, and cracking propagates into the rim section under load. At the locations tested, the as-manufactured wheels have a relatively “flat” axial residual stress profile, compressive but near neutral, caused by the rim quenching operation, while wheels that have been in service have a layer of high axial compressive stress at the tread surface, and a balancing zone of axial tensile stress underneath. The magnitude and direction of this tensile stress is consistent with the crack propagation of a VSR failure. When cracks from the tread surface propagate into this sub-surface axial tensile zone, a VSR can occur under sufficient additional service loading, such as loads caused by in-service wheel/rail impacts from tread damage. Further, softer Class U wheels, removed from service and tested, were found to have a balancing axial tensile stress layer that is deeper below the tread surface than that found in used Class C wheels. This paper describes further efforts to characterize the axial residual stress present in failed VSR and used Class C wheels. Axial residual stress results are obtained near the initiation point of several VSR wheels using x-ray diffraction. Sub-surface axial residual stress patterns are also determined at points of high out-of-roundness for a group of wheels that were tested for TIR (total indicated runout) on the tread surface. Residual stress data and a photo are presented for a wheel rim slice containing a second VSR crack. Additionally, wheel rim ultrasonic testing data, collected by the wheel manufacturer when the wheels were new, are discussed for wheels that have failed due to VSRs and these data are compared to ultrasonic data for non-VSR wheels. Chemistry data are also compared. These data show that the driving force for VSRs is axial residual tensile stress, not a material cleanliness issue.

Strain Evaluation of GaAs Layers Grown on Ultrahigh-Pressure-Annealed Strain-Free GaAs-On-Si Structures

1997 ◽  
Vol 486 ◽  
Author(s):  
Takehito Jimbo ◽  
Hiroshi Ishiwara
Keyword(s):  
Chemical Vapor ◽  
Xrd Analysis ◽  
Gaas Layer ◽  
Ultrahigh Pressure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Gaas On Si ◽  
Gaas Films ◽  
Regeneration Effect

AbstractIn order to form strain-free GaAs films on Si substrates, GaAs-on-Si structures have been formed by molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD) and subsequently annealed under ultrahigh pressure at 2 GPa. The samples were then reannealed at atmospheric pressure in order to investigate the regeneration effect of strain in the GaAs films. It was found from X-ray diffraction (XRD) analysis and photoluminescence (PL) measurement that in the reannealed samples the strain near the surface of GaAs film was smaller than that near the interface with Si. Finally, additional GaAs layers were grown using MBE on both as-grown and strain-free GaAs-on-Si structures and it was found that the residual strain in the GaAs layer on strain-free GaAs-on-Si structure was smaller than in the as-grown case.

Coupled Thermal-Mechanical Analysis of CO2 Laser Irradiation on Fused Silica

2016 ◽  
Vol 1136 ◽  
pp. 531-536
Author(s):  
Run Qiang Li ◽  
Peng Yao ◽  
Hao Meng ◽  
Jun Wang ◽  
Ke Zhang ◽  
...  
Keyword(s):  
Residual Stress ◽  
Tensile Stress ◽  
Laser Irradiation ◽  
Laser Energy ◽  
Viscoelastic Behavior ◽  
Mechanical Analysis ◽  
Fused Silica ◽  
Depth Of Cut ◽  
Residual Tensile Stress ◽  
Thermally Induced

To grind fused silica in ductile mode, it was proposed to repair surface and subsurface micro cracks of fused silica by CO2 laser irradiation. However, excessive residual stress remains on the surface because the melt fused silica on the surface quenches in air. It causes the critical depth of cut for ductile grinding fused silica to be smaller than 0.2μm. To investigate the distribution of the residual stress and look for an optimal manner of irradiation to control residual tensile stress, a numerical model of was built for simulating the dynamic behavior of fused silica when irradiated by CO2 laser. Laser energy absorption, heat transmission, viscoelastic behavior of fused silica and thermally induced stress were considered in the numerical simulation. The results show how the residual stress is formed and distributed. We found that an appropriate control of the temperature field as a function of time and position in the laser process is the key to reduce the residual stress. Therefore, three kinds of processes were proposed to reduce residual tensile stress on the surface of fused silica introduced by laser irradiation. The residual stress distributions of these three processes were compared by numerical analysis to decide a better method of laser irradiation.

Test Research on the Surface Residual Stress of Dimensional Ultrasonic Vibration Grinding for Al2O3/ZrO2(n)

2011 ◽  
Vol 295-297 ◽  
pp. 78-82
Author(s):  
Yan Wu ◽  
Er Geng Zhang ◽  
Wen Zhong Nie
Keyword(s):  
Residual Stress ◽  
Tensile Stress ◽  
Ultrasonic Vibration ◽  
Ground Surface ◽  
Ductile Deformation ◽  
Grinding Wheel ◽  
Ceramic Surface ◽  
Two Dimensional ◽  
Surface Residual Stress ◽  
Xrd Diffraction

Based on the research for the structure of the ceramic nanocomposites’ intragranular for Al2O3/ZrO2(n)，we did the test by the workpiece two-dimensional vibration grinding(WTDUVG), and focus on analyzing the characteristic and the effect element of the two-dimensional ultrasonic vibration grinding ceramic surface residual stress by the XRD diffraction. The result show that ceramic dimensional ultrasonic vibration grinding surface tensile stress is less than the same conventional grinding (CG) surface under tensile stress; two-dimensional ultrasonic vibration grinding surface residual compressive stress than conventional ground surface residual stress under the same grinding. Material removal mechanism of the grinding nature of the surface residual stress, when the material removaled by ductile deformation, grinding surface equal residual stress; when the material removaled by brittle- ductile mixed mode, the grinding surface tensile stress reduced, because the fracture of the ground surface, tensile stress released. As a results, the grit size of grinding wheel, Grinding depth and workpiece mechanical properties are the main technology factors affected the nature and size of the residual stress of ground surface.

Mechanical Properties of Boron Doped Si and Si/SiO 2 Membranes

2002 ◽  
Vol 729 ◽  
Author(s):  
Gabe Kuhn ◽  
Todd Myers ◽  
Susmita Bose ◽  
Amit Bandyopadhyay
Keyword(s):  
Tensile Stress ◽  
Boron Concentration ◽  
Boron Doping ◽  
Residual Tensile Stress ◽  
Flexural Mode ◽  
Si Substrates ◽  
Boron Doped ◽  
Pzt Film ◽  
Processing Variables ◽  
Etch Stop

AbstractIn our research, PZT film actuated micro-machined Si substrates are being developed for numerous applications in which membranes are actuated primarily in flexural mode. Silicon wafers, 3-inches in diameter, underwent boron doping in order to act as an etch stop. Approximately 200-nm of SiO2 was grown on the boron-doped side of the wafers. Photolithography and backside etching using EDP resulted in 2-μm thick membranes. Using reactive ion etching (RIE), beam structures resulted from the membranes. Nano-mechanical testing of the beams indicated that there were substantial residual tensile stresses in these structures. Initial calculations reveal a tensile stress of 57.7 MPa in the Si/SiO2 beams. The residual tensile stress subsequently caused the overall beam stiffness to be two orders of magnitude higher than it would be without stress. After stripping the oxide with a buffered oxide etchant (BOE), a residual stress of 26.5 MPa was measured, which is presumably caused from the remaining boron concentration. The aim of this paper is to understand influences of boron doping and processing variables on residual stresses.

Residual Stress Distribution in Pure Bending Beam Subjected to Tensile Failure on One Side

2006 ◽  
Vol 524-525 ◽  
pp. 253-258
Author(s):  
X.B. Wang
Keyword(s):  
Residual Stress ◽  
Tensile Strength ◽  
Stress Distribution ◽  
Tensile Stress ◽  
Strain Localization ◽  
Tensile Strain ◽  
Residual Stress Distribution ◽  
Neutral Axis ◽  
Residual Tensile Stress ◽  
Pure Bending

The stress distribution on the midsection of a pure bending beam where tensile strain localization band initiates on the tensile side of the beam and propagates within the beam is analyzed. Using the static equilibrium condition on the section of the midspan of the beam and the assumption of plane section as well as the linear softening constitutive relation beyond the tensile strength, the expressions for the length of tensile strain localization band and the distance from the tip of the band to the neutral axis are derived. After superimposing a linear unloading stress distribution over the initial stress distribution, the residual stress distribution on the midsection of the beam is investigated. In the process of strain localization band’s propagation, strain-softening behavior of the band occurs and neutral axis will shift. When the unloading moment is lower, the length of tensile strain localization band remains a constant since the stress on the base side of the beam is tensile stress. While, for larger unloading moment, with an increase of unloading moment, the length of tensile strain localization band decreases and the distance from the initial neutral axis to the unloading neutral axis increases. The neutral axis of midsection of the beam will shift in the unloading process. The present analysis is applicable to some metal materials and many quasi-brittle geomaterials (rocks and concrete, etc) in which tensile strength is lower than compressive strength. The present investigation is limited to the case of no real crack. Moreover, the present investigation is limited to the case that the length of strain localization band before unloading is less than half of depth of the beam. Otherwise, the residual tensile stress above the elastic neutral axis will be greater than the tensile strength, leading to the further development of tensile strain localization band in the unloading process.

MO-CVD GaAs Grown by Direct Deposition on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
S. M. Vernon ◽  
S. J. Pearton ◽  
J. M. Gibson ◽  
R. Caruso ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Gaas Layer ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Activation Data ◽  
Threading Dislocation Density ◽  
Donor Activity

ABSTRACTGaAs layers were grown directly on misoriented (2° off (100)→[011]) Si substrates by Metalorganic Chemical Vapor Deposition. The threading dislocation density at the surface of 4 μm thick layers was typically 108cm−2, as determined by both preferential etching and transmission electron microscopy. Rapid thermal annealing (900°C, 10s) improved the crystalline quality of the GaAs near the heterointerface while allowing no detectable Si diffusion into this layer. Two deep electron traps were observed in the undoped GaAs, but were present at a low concentration (∼ 1013 cm−3 ). The (400) x-ray diffraction peak width from the GaAs was significantly reduced with increasing GaAs layer thickness, indicating improved material quality. This is supported by Si implant activation data, which shows higher net donor activity in thicker layers.

scholarly journals Residual Stress Tensor Distributions in Cracked Austenitic Stainless Steel Measured by Two-Dimensional X-Ray Diffraction Method

2014 ◽  
Vol 996 ◽  
pp. 128-134 ◽  
Author(s):  
Youichi Saito ◽  
Shunichiro Tanaka
Keyword(s):  
Residual Stress ◽  
Stainless Steel ◽  
Austenitic Stainless Steel ◽  
Stress Tensor ◽  
Equivalent Stress ◽  
Diffraction Method ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Stress Concentrations ◽  
X Ray

The residual stress tensor for cracked austenitic stainless steel was measured by a two-dimensional X-ray diffraction method. Higher von Mises equivalent stress concentrations, attributed to hot crack initiation, were obtained at both crack ends. The stress of 400 MPa at the crack end in the columnar grain region was about two-fold larger than that of 180 MPa in the equiaxed grain region. This difference was caused by a depression in the cast slab.

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