Bonded Hydrogen in Silicon Oxide Thin Films Deposited By Remote Plasma Enhanced Chemical Vapor Deposition

1987 ◽  
Vol 98 ◽  
Author(s):  
D. V. Tsu ◽  
G. Lucovsky
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Silicon Oxides ◽  
Oh Groups ◽  
Plasma Enhanced Cvd ◽  
Cvd Method ◽  
Sioh Group

ABSTRACTWe have deposited a range of silicon oxides by the Remote Plasma Enhanced CVD method. By varying gas mixtures and/or substrate temperature, it is possible to deposit films that are essentially stoichiometric SiO_, Si-deficient oxides which have OH groups but no SiH and Si-rich oxides which have SiH groups and no OH. This paper addresses three issues : (1) the nature of the infrared vibrations associated with the SiH and SiOH groups; (2) the use of D for H substitutions to study the vibrations in (1); and (3) the chemical origin of the SiOH group in the Si-deficient films.

Control of Bonded SiH in Silicon Oxides Deposited by Remote Plasma Enhanced CVD

1987 ◽  
Vol 105 ◽  
Author(s):  
D. V. Tsu ◽  
G. N. Parsons ◽  
G. Lucovsky ◽  
M. W. Watkins
Keyword(s):  
Silicon Oxide ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Plasma Region ◽  
Remote Plasma ◽  
Silicon Oxides ◽  
Hydrogenated Silicon ◽  
Plasma Enhanced Cvd ◽  
Amorphous Hydrogenated Silicon ◽  
Wide Range

AbstractThis paper describes Optical Emission Spectrocopy (OES) and Mass Spectrometry (MS) studies of the plasma region in the Remote Plasma Enhanced Chemical Vapor Deposition (PECVD) of amorphous hydrogenated silicon (a-Si:H) and silicon oxide thin films. In Remote PECVD, only the O2/He mixture is plasma excited, silane is introduced into the deposition chamber well below the plasma region. Deposition of films has been studied over a wide range of relative He and O2flows, between 100% He and 100% O2. The incorporation of SiH in the oxides derives from the same mechanism as the deposition of a-Si:H, i.e., a metastable He induced fragmentation of silane.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

scholarly journals Controlled Deposition of Lead Iodide and Lead Chloride Thin Films by Low-Pressure Chemical Vapor Deposition

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1208
Author(s):  
Siphelo Ngqoloda ◽  
Christopher J. Arendse ◽  
Theophillus F. Muller ◽  
Siphesihle S. Magubane ◽  
Clive J. Oliphant
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Lead Chloride ◽  
Lead Iodide ◽  
Cvd Method ◽  
Average Grain Size ◽  
Pressure Chemical ◽  
Lead Halide

Lead halide thin films, such as lead iodide (PbI2) and lead chloride (PbCl2), are used as precursor films for perovskite preparation, which is frequently achieved by vacuum thermal evaporation but rarely by the low-pressure chemical vapor deposition (CVD) method. Here, we report on the deposition of PbI2 and PbCl2 thin films on glass substrates by employing the low-pressure CVD method. The effect of the substrate temperature on the structure and morphology of the lead halide films is investigated. Crystalline films were realized for both lead halides, with PbI2 films showing high texture compared to the reduced texture of the PbCl2 films. Large lateral grain sizes were observed for the PbI2 films with a flat platelet grain morphology and an average grain size up to 734.2 ± 144.8 nm. PbCl2 films have columnar grains with an average grain size up to 386.7 ± 119.5 nm. The PbI2 films showed a band gap of about 2.4 eV, confirming its semiconducting properties, and the PbCl2 had a wide band gap of 4.3 eV, which shows the insulating properties of this material.

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