Analysis of Electrodeposited NiFe Thin Films for the Development of Planar Fluxgate Magnetic Sensors

2007 ◽  
Vol 998 ◽  
Author(s):  
Thais Cavalheri dos Santos ◽  
Marcelo Mulato
Keyword(s):  
Thin Films ◽  
Current Density ◽  
Deposition Time ◽  
Magnetic Sensors ◽  
Hysteresis Cycle ◽  
X Ray Diffraction ◽  
Final Thickness ◽  
Total Deposition ◽  
Current Densities ◽  
Deposited Films

ABSTRACTNife alloys are potential candidates for the development of planar fluxgate magnetic microsensors. In this work, electrodeposition was used to produce NiFe thin films on top of copper substrates. When using this technique the variation of the electric potential, and thus the current density, alters the final stoichiometry of the deposited films, while the final thickness is determined by the total deposition time. We used current densities varying from 4.0 mA/cm2 to 28 mA/cm2, with steps of 4.0 mA/cm2. For each current density, total deposition times of 10, 20, 30 and 40 minutes were used. The morphology was characterized using scanning electron microscopy, structure was characterized using X-ray diffraction experiments, and the composition of the films were determined using energy dispersive spectroscopy. The magnetic properties were investigated evaluating the materials hysteresis cycle. The materials were optimized aiming for lowest coercivity values, and the final result was about 0.215 kA/m.

Effect of Deposition Time on Structure of TiAlN Thin Films Deposited by Reactive DC Magnetron Co-Sputtering

2017 ◽  
Vol 866 ◽  
pp. 318-321 ◽  
Author(s):  
Nirun Witit-Anun ◽  
Adisorn Buranawong
Keyword(s):  
Thin Films ◽  
Elemental Composition ◽  
Deposition Time ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Titanium Aluminum ◽  
Titanium Aluminum Nitride ◽  
Deposited Films ◽  
Section Analysis

Titanium aluminum nitride (TiAlN) thin films were deposited by reactive DC magnetron co-sputtering technique on Si substrate. The effect of deposition time on the structure of the TiAlN films was investigated. The crystal structure, surface morphology, thickness and elemental composition were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS) technique, respectively. The results showed that, all the as-deposited films were formed as a (Ti,Al)N solid solution. The as-deposited thin films exhibited a nanostructure with a crystallite size of less than 30 nm. The film thickness increase from 115 nm to 329 nm, while the lattice parameter decrease from 4.206 Å to 4.196 Å, with increasing of the deposition time. Cross section analysis by FE-SEM showed compact columnar and dense morphology as a result of increasing the deposition time. The elemental composition of the as-deposited films varied with the deposition time.

Optical and Structural Properties of ZnS Thin Films Grown by CBD Technique

2010 ◽  
Vol 139-141 ◽  
pp. 149-152 ◽  
Author(s):  
Huda Abdullah ◽  
Nor Habibi Saadah ◽  
Sahbudin Shaari ◽  
Andanastuti Muchtar
Keyword(s):  
Thin Films ◽  
Deposition Time ◽  
Sodium Citrate ◽  
Optical Glass ◽  
Visible Region ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
Direct Band ◽  
Deposited Films

Zinc sulfide thin films were deposited on optical glass substrates by using chemical bath deposition (CBD) technique that contain solutions of thiourea, zinc acetate, ammonia and sodium citrate. The deposition time were varied from 18 hours to 39 hours. SEM, XRD, and UV-Vis-NIR were used to characterize the sample which shows that the films are thicker and the grains sizes are bigger as the deposition time increases. X-ray diffraction (XRD) pattern prove that ZnS thin films are in disordered since it does not revealing any peaks and the surface of ZnS thin films are amorphous. UV-Vis spectra showed that the deposited ZnS thin films have more than 100% transmittance in the visible region and direct band gap of deposited films are in range of 2.45 eV to 3.53 eV. Time increasing of deposition will slightly decrease the transmittance of the film.

Studies on Magnetron-Sputtered NiO/Si3N4 Thin Films

2018 ◽  
Vol 17 (03) ◽  
pp. 1760039
Author(s):  
K. M. Dhanisha ◽  
M. Manoj Christopher ◽  
M. Abinaya ◽  
P. Deepak Raj ◽  
M. Sridharan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Smooth Surface ◽  
Deposition Time ◽  
Si Substrate ◽  
X Ray ◽  
Coating Time ◽  
Deposited Films ◽  
Nio Films ◽  
Scanning Electron

The present work deals with NiO/Si3N4 layers formed by depositing nickel oxide (NiO) thin films over silicon nitrate (Si3N[Formula: see text] thin films. NiO films were coated on Si3N4-coated Si substrate using magnetron sputtering method by changing duration of coating time and were analyzed using X-ray diffractometer, field emission-scanning electron microscopy, UV–Vis spectrophotometer and four-point probe method to study the influence of thickness on physical properties. Crystallinity of the deposited films increases with increase in thickness. All films exhibited spherical-like structure, and with increase in deposition time, grains are coalesced to form smooth surface morphology. The optical bandgap of NiO films was found to decrease from 3.31[Formula: see text]eV to 3.22[Formula: see text]eV with upsurge in the thickness. The film deposited for 30[Formula: see text]min exhibits temperature coefficient resistance of [Formula: see text]1.77%/[Formula: see text]C as measured at 80[Formula: see text]C.

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

Electrophoretic Deposition of Titania Thin Films: Influence of Deposition Time on Microstructural and Optical Properties of the Coatings

2013 ◽  
Vol 829 ◽  
pp. 917-921
Author(s):  
Saber Ghannadi ◽  
Hossein Abdizadeh ◽  
Mohammad Reza Golobostanfard
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electrophoretic Deposition ◽  
Deposition Time ◽  
Colloidal Suspension ◽  
Vis Spectroscopy ◽  
Titania Films ◽  
Titania Sol ◽  
Deposited Film ◽  
Deposited Films

Titania thin films were prepared by electrophoretic deposition at various deposition times (1, 5 and 10 min) in constant applied potential (5 V). For this purpose, modified titania sol was prepared as a colloidal suspension. The influence of deposition time on the thickness and optical properties of titania films was investigated. Scanning electron microscope images illustrate compact and homogeneous titania films deposited on FTO substrates. The results show that the film thickness increases with increasing the deposition time. It could be inferred from UV-Vis spectroscopy that increasing the thickness of deposited film causes higher absorbance at UV region. Also, increasing the deposition time from 1 to 5 min leads to increase in optical band gap of the deposited films.

NbN Thin Film of Alternating Textures

2017 ◽  
Vol 898 ◽  
pp. 1431-1437
Author(s):  
Hong Yang Shao ◽  
Kan Zhang ◽  
Yi Dan Zhang ◽  
Mao Wen ◽  
Wei Tao Zheng
Keyword(s):  
Deposition Time ◽  
Peak Position ◽  
Preferred Orientation ◽  
Intrinsic Stress ◽  
Competitive Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Orientation Distributions ◽  
Different Thickness ◽  
Deposited Films

The δ-NbN thin films with different thickness have been prepared by reactive magnetron sputtering at different deposition time and exhibited alternating textures between (111) and (200) orientations as a function of thickness. In addition, the grain size, peak position, morphology, residual stress and orientation distributions of the deposited films were explored by X-ray diffraction, low-angel X-ray reflectivity, scanning electron microscopy and surface profiler. The film deposited at 300 s showed a (111) preferred orientation, changing to (200) preferred orientation at 600 s, and exhibited alternating textures between (111) and (200) preferred orientations. With further increasing deposition time, in which (200) peak position and the full width at half maximum of (111) peak also displayed a trend of alternating variation with varying deposition time. The intrinsic stress for δ-NbN films calculated by Stoney equation alternately changed with alternating textures, in which (111) orientation always takes place at relatively high intrinsic stress state and vice versa. Meanwhile, the film with (111) preferred orientation showed higher density than (200) preferred orientation. The film deposited at 4800 s owned a mixed texture of (111) and (200), showing an anisotropy distribution of (111)-oriented and (200)-oriented grains, while film deposited at 7200 s owned a strong (200) texture, displaying an isotropy distribution of (200)-oriented grains. The competitive growth between (111)-oriented and (200)-oriented grains was responsibility for alternating texture.

scholarly journals Characterization of Electrodeposited Cadmium Selenide Thin Films

2012 ◽  
Vol 60 (1) ◽  
pp. 137-140 ◽  
Author(s):  
RI Chowdhury ◽  
MS Islam ◽  
F Sabeth ◽  
G Mustafa ◽  
SFU Farhad ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Low Cost ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cdse Film ◽  
Cell Structures ◽  
Deposited Film ◽  
Deposited Films

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352  Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)

scholarly journals Characterization of Cobalt Sulfide Thin Films Synthesized from Acidic Chemical Baths

2020 ◽  
Vol 2020 ◽  
pp. 1-9
Author(s):  
Tizazu Abza ◽  
Dereje Gelanu Dadi ◽  
Fekadu Gashaw Hone ◽  
Tesfaye Chebelew Meharu ◽  
Gebremeskel Tekle ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystallite Size ◽  
Deposition Time ◽  
Average Crystallite Size ◽  
Cobalt Sulfide ◽  
Face Centered Cubic ◽  
X Ray Diffraction ◽  
Electron Microscopic ◽  
Face Centered

Cobalt sulfide thin films were synthesized from acidic chemical baths by varying the deposition time. The powder X-ray diffraction studies indicated that there are hexagonal CoS, face-centered cubic Co3S4, and cubic Co9S8 phases of cobalt sulfide. The crystallite size of the hexagonal CoS phase decreased from 52.8 nm to 22.5 nm and that of the cubic Co9S8 phase increased from 11 nm to 60 nm as the deposition time increased from 2 hrs to 3.5 hrs. The scanning electron microscopic images revealed crack and pinhole free thin films with uniform and smooth background and few large polygonal grains on the surface. The band gap of the cobalt sulfide thin films decreased from 1.75 eV to 1.3 eV as the deposition time increased from 2 hrs to 3.5 hrs. The photoluminescence (PL) spectra of the films confirmed the emission of ultraviolet, violet, and blue lights. The intense PL emission of violet light at 384 nm had red shifted with increasing deposition time that could be resulted from the increase in the average crystallite size. The FTIR spectra of the films indicated the presence of OH, C-O-H, C-O, double sulfide, and Co-S groups. As the deposition time increased, the electrical resistivity of the cobalt sulfide thin films decreased due to the increase in both the crystallite size and the films’ thickness.

Electrodeposited Iron(III) Oxide (α-Fe2O3) Thermoelectric Thin Films

2016 ◽  
Vol 701 ◽  
pp. 23-27 ◽  
Author(s):  
Mohd Zuhri Shaiful Azni ◽  
Ho Kee Tan ◽  
Pei Ling Low ◽  
Nisha Kumari Devaraj ◽  
Boon Hoong Ong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Deposition Time ◽  
Deposition Potential ◽  
Electrical Conductivities ◽  
Potentiostatic Electrodeposition ◽  
Layered Growth ◽  
Time Parameters ◽  
Thermoelectric Thin Films ◽  
Deposited Films

α-Fe2O3 thermoelectric thin films were electrodeposited onto copper substrates using chloride-based electrolytes by means of potentiostatic electrodeposition. The influence of several electrodeposition parameters on the surface morphology, elemental composition and electrical conductivity of the deposited films was studied and analyzed. The deposits formed porous, wire-like morphology, with the smallest width measured to be ~60 nm. The wires tend to aggregate to form clusters, in addition to multi-layered growth of the wires. Between the parameters studied, electrolyte concentration and deposition time parameters have higher influences on the electrical conductivity of the deposited films, with the increment up to two fold higher. Deposition potential parameter offered the lowest capability to improve on the electrical conductivity in addition to the non-uniform distribution of the measured electrical conductivities. The tunable electrical conductivity is favorable for improving the performance of α-Fe2O3 films for thermoelectric applications.

EFFECT OF GRAIN SIZE ON THE FERROELECTRIC PROPERTIES OF Bi3.25La0.75Ti3O12 Thin Films

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4469-4474 ◽  
Author(s):  
KYOUNG-TAE KIM ◽  
CHANG-IL KIM ◽  
DONG-HEE KANG ◽  
IL-WUN SHIM
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Fatigue Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities ◽  
Metalorganic Decomposition ◽  
Small Grains

The Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were prepared by metalorganic decomposition method. The effect of grain size on the ferroelectric properties during crystallization were investigated by x-ray diffraction and field emission scanning electron microscope. The grain size and the roughness of BLT films increase with increasing of drying temperature. The leakage current densities of the BLT thin film with large grains are higher than that with small grains. The remanent polarization of BLT increase with increasing grain size. As compared BLT with small grain size, the BLT film with larger grain size shows better fatigue properties. This may be explained that small grained films shows more degradation of switching charge than large grained films.

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