Electrophoretic Deposition of Titania Thin Films: Influence of Deposition Time on Microstructural and Optical Properties of the Coatings

2013 ◽  
Vol 829 ◽  
pp. 917-921
Author(s):  
Saber Ghannadi ◽  
Hossein Abdizadeh ◽  
Mohammad Reza Golobostanfard

Titania thin films were prepared by electrophoretic deposition at various deposition times (1, 5 and 10 min) in constant applied potential (5 V). For this purpose, modified titania sol was prepared as a colloidal suspension. The influence of deposition time on the thickness and optical properties of titania films was investigated. Scanning electron microscope images illustrate compact and homogeneous titania films deposited on FTO substrates. The results show that the film thickness increases with increasing the deposition time. It could be inferred from UV-Vis spectroscopy that increasing the thickness of deposited film causes higher absorbance at UV region. Also, increasing the deposition time from 1 to 5 min leads to increase in optical band gap of the deposited films.

2012 ◽  
Vol 576 ◽  
pp. 586-589 ◽  
Author(s):  
Saber Ghannadi ◽  
H. Abdizadeh ◽  
M. Golobostanfard

In this study nanocrystalline anatase TiO2 thin films were prepared by electrophoretic deposition of titania sol at various applied voltages. The well-known sol-gel method was used to prepare the titania sol. The influence of applied voltage on the structure, morphology and optical properties of thin films has been characterized by X-ray diffraction, field emission scanning electron microscopy and UV-Vis spectroscopy. The results show that the thickness of the films formed on the substrate increases with increasing the applied voltage. However, with increasing the thickness of the films, the cracks increased and the transparency reduced in the visible region.


2021 ◽  
Vol 0 (0) ◽  
Author(s):  
N. Chabou ◽  
B. Birouk ◽  
M.S. Aida ◽  
J.P. Raskin

AbstractNanocrystalline zinc sulfide (ZnS) thin films are prepared on glass substrates by chemical bath deposition (CBD) method using aqueous solutions of zinc chloride, thiourea ammonium hydroxide along with non-toxic complexing agent tri-sodium citrate in alkaline medium at 80 °C. The deposition time and annealing effects on the optical and morphological properties are studied. The morphological, compositional, and optical properties of the films are investigated by scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDAX) and UV-Vis spectroscopy. SEM micrographs exhibit uniform surface coverage. UV-Vis (300 nm to 800 nm) spectrophotometric measurements show transparency of the films (transmittance ranging from 69 % to 81 %), with a direct allowed energy band gap in the range of 3.87 eV to 4.03 eV. After thermal annealing at 500 °C for 120 min, the transmittance increases up to 87 %.


Author(s):  
Minakshi Chaudhary ◽  
Yogesh Hase ◽  
Ashwini Punde ◽  
Pratibha Shinde ◽  
Ashish Waghmare ◽  
...  

: Thin films of PbS were prepared onto glass substrates by using a simple and cost effective CBD method. Influence of deposition time on structural, morphology and optical properties have been investigated systematically. The XRD analysis revealed that PbS films are polycrystalline with preferred orientation in (200) direction. Enhancement in crystallinity and PbS crystallite size has been observed with increase in deposition time. Formation of single phase PbS thin films has been further confirmed by Raman spectroscopy. The surface morphology analysis revealed the formation of prismatic and pebble-like PbS particles and with increase in deposition time these PbS particles are separated from each other without secondary growth. The data obtained from the EDX spectra shows the formation of high-quality but slightly sulfur rich PbS thin films over the entire range of deposition time studied. All films show increase in absorption with increase in deposition time and a strong absorption in the visible and sub-band gap regime of NIR range of the spectrum with red shift in band edge. The optical band gap shows decreasing trend, as deposition time increases but it is higher than the band gap of bulk PbS.


2018 ◽  
Vol 17 (03) ◽  
pp. 1760039
Author(s):  
K. M. Dhanisha ◽  
M. Manoj Christopher ◽  
M. Abinaya ◽  
P. Deepak Raj ◽  
M. Sridharan

The present work deals with NiO/Si3N4 layers formed by depositing nickel oxide (NiO) thin films over silicon nitrate (Si3N[Formula: see text] thin films. NiO films were coated on Si3N4-coated Si substrate using magnetron sputtering method by changing duration of coating time and were analyzed using X-ray diffractometer, field emission-scanning electron microscopy, UV–Vis spectrophotometer and four-point probe method to study the influence of thickness on physical properties. Crystallinity of the deposited films increases with increase in thickness. All films exhibited spherical-like structure, and with increase in deposition time, grains are coalesced to form smooth surface morphology. The optical bandgap of NiO films was found to decrease from 3.31[Formula: see text]eV to 3.22[Formula: see text]eV with upsurge in the thickness. The film deposited for 30[Formula: see text]min exhibits temperature coefficient resistance of [Formula: see text]1.77%/[Formula: see text]C as measured at 80[Formula: see text]C.


2022 ◽  
Vol 1048 ◽  
pp. 189-197
Author(s):  
Tippasani Srinivasa Reddy ◽  
M.C. Santhosh Kumar

In this study report the structural and optical properties of Copper Tin Sulfide (Cu2SnS3) thin films on indium tin oxide (ITO) substrate using co-evaporation technique. High purity of copper, tin and sulfur were taken as source materials to deposit Cu2SnS3 (CTS) thin films at different substrate temperatures (200-350 °C). Further, the effect of different substrate temperature on the crystallographic, morphological and optical properties of CTS thin films was investigated. The deposited CTS thin films shows tetragonal phase with preferential orientation along (112) plane confirmed by X-ray diffraction. Micro-Raman studies reveled the formation of CTS thin films. The surface morphology, average grain size and rms values of the deposited films are examined by Scanning electron spectroscopy (SEM) and Atomic Force Microscopy (AFM). The Energy dispersive spectroscopy (EDS) shows the presence of copper, tin and sulfur with a nearly stoichiometric ratio. The optical band gap (1.76-1.63 eV) and absorption coefficient (~105 cm-1) of the films was calculated by using UV-Vis-NIR spectroscopy. The values of refractive index, extinction coefficient and permittivity of the deposited films were calculated from the optical transmittance data.


Author(s):  
J. Damisa ◽  
J. O. Emegha ◽  
I. L. Ikhioya

Lead tin sulphide (Pb-Sn-S) thin films (TFs) were deposited on fluorine-doped tin oxide (FTO) substrates via the electrochemical deposition process using lead (II) nitrate [Pb(NO3)2], tin (II) chloride dehydrate [SnCl2.2H2O] and thiacetamide [C2H5NS] precursors as sources of lead (Pb), tin (Sn) and sulphur (S). The solution of all the compounds was harmonized with a stirrer (magnetic) at 300k. In this study, we reported on the improvements in the properties (structural and optical) of Pb-Sn-S TFs by varying the deposition time. We observed from X-ray diffractometer (XRD) that the prepared material is polycrystalline in nature. UV-Vis measurements were done for the optical characterizations and the band gap values were seen to be increasing from 1.52 to 1.54 eV with deposition time. In addition to this, the absorption coefficient and refractive index were also estimated and discussed.


2012 ◽  
Vol 60 (1) ◽  
pp. 137-140 ◽  
Author(s):  
RI Chowdhury ◽  
MS Islam ◽  
F Sabeth ◽  
G Mustafa ◽  
SFU Farhad ◽  
...  

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352  Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)


2016 ◽  
Vol 701 ◽  
pp. 23-27 ◽  
Author(s):  
Mohd Zuhri Shaiful Azni ◽  
Ho Kee Tan ◽  
Pei Ling Low ◽  
Nisha Kumari Devaraj ◽  
Boon Hoong Ong ◽  
...  

α-Fe2O3 thermoelectric thin films were electrodeposited onto copper substrates using chloride-based electrolytes by means of potentiostatic electrodeposition. The influence of several electrodeposition parameters on the surface morphology, elemental composition and electrical conductivity of the deposited films was studied and analyzed. The deposits formed porous, wire-like morphology, with the smallest width measured to be ~60 nm. The wires tend to aggregate to form clusters, in addition to multi-layered growth of the wires. Between the parameters studied, electrolyte concentration and deposition time parameters have higher influences on the electrical conductivity of the deposited films, with the increment up to two fold higher. Deposition potential parameter offered the lowest capability to improve on the electrical conductivity in addition to the non-uniform distribution of the measured electrical conductivities. The tunable electrical conductivity is favorable for improving the performance of α-Fe2O3 films for thermoelectric applications.


Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1536 ◽  
Author(s):  
Jun Ling ◽  
Xulei Zhang ◽  
Ting Mao ◽  
Lei Li ◽  
Shilin Wang ◽  
...  

CdTe thin films have been prepared by electrochemical deposition. The morphological, structural, and optical properties of CdTe thin films deposited with different deposition time were investigated, and the influence of film thickness on the photoelectric characteristics of CdTe thin films was studied. At the deposition time of 1.5 h, CdTe thin films had good optical properties and the photocurrent reached 20 μAcm−2. Furthermore, the Pt/CdS/CdTe/FTO structure was prepared to improve its PEC stability and the photocurrent of 240 μAcm−2 had been achieved.


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