A Study on Substrate Orientation Dependence of Si Surface Flattening Process by Sacrificial Oxidation and Its Effect on MIS Diode Characteristics

Sohya KUDOH; Shun-ichiro OHMI

doi:10.1587/transele.e99.c.504

A Study on Substrate Orientation Dependence of Si Surface Flattening Process by Sacrificial Oxidation and Its Effect on MIS Diode Characteristics

IEICE Transactions on Electronics ◽

10.1587/transele.e99.c.504 ◽

2016 ◽

Vol E99.C (5) ◽

pp. 504-509 ◽

Cited By ~ 2

Author(s):

Sohya KUDOH ◽

Shun-ichiro OHMI

Keyword(s):

Orientation Dependence ◽

Surface Flattening ◽

Substrate Orientation ◽

Mis Diode ◽

Flattening Process

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A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics

IEICE Transactions on Electronics ◽

10.1587/transele.e98.c.402 ◽

2015 ◽

Vol E98.C (5) ◽

pp. 402-405 ◽

Cited By ~ 3

Author(s):

Sohya KUDOH ◽

Shun-ichiro OHMI

Keyword(s):

Oxidation Process ◽

Surface Flattening ◽

Mis Diode

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Substrate orientation dependence of first- and second-oxide-layer growth kinetics: comparison between Si[001]2 x 1 and Si[111]7 x 7 surfaces

Digest of Papers. 2004 International Microprocesses and Nanotechnology Conference, 2004. ◽

10.1109/imnc.2004.245713 ◽

2004 ◽

Keyword(s):

Oxide Layer ◽

Growth Kinetics ◽

Orientation Dependence ◽

Layer Growth ◽

Substrate Orientation

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Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (2¯01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

APL Materials ◽

10.1063/1.5135772 ◽

2020 ◽

Vol 8 (1) ◽

pp. 011107 ◽

Cited By ~ 13

Author(s):

P. Mazzolini ◽

A. Falkenstein ◽

C. Wouters ◽

R. Schewski ◽

T. Markurt ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Orientation Dependence ◽

Metal Exchange ◽

Substrate Orientation

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ChemInform Abstract: SUBSTRATE ORIENTATION DEPENDENCE OF GROWTH RATE OF INDIUM GALLIUM ARSENIDE/INDIUM PHOSPHIDE GROWN BY LIQUID PHASE EPITAXY

Chemischer Informationsdienst ◽

10.1002/chin.198311006 ◽

1983 ◽

Vol 14 (11) ◽

Author(s):

K. NAKAJIMA ◽

K. AKITA

Keyword(s):

Growth Rate ◽

Gallium Arsenide ◽

Liquid Phase ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Orientation Dependence ◽

Substrate Orientation ◽

Indium Gallium

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Substrate orientation dependence of the growth of GaSe thin films on GaAs

Applied Surface Science ◽

10.1016/s0169-4332(97)80136-5 ◽

1997 ◽

Vol 117-118 ◽

pp. 523-529 ◽

Cited By ~ 11

Author(s):

C. Tatsuyama ◽

H. Nishiwaki ◽

K. Asai ◽

K.K. Lim ◽

T. Tambo ◽

...

Keyword(s):

Thin Films ◽

Orientation Dependence ◽

Substrate Orientation

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Substrate orientation-dependence of electron mobility in strained SiGe layers

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. ◽

10.1109/sispad.2003.1233636 ◽

2003 ◽

Cited By ~ 2

Author(s):

S. Smirnov ◽

H. Kosina ◽

S. Selberherr

Keyword(s):

Electron Mobility ◽

Orientation Dependence ◽

Substrate Orientation ◽

Strained Sige

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The substrate orientation dependence of GaAsSb thin layer and GaSb dots grown by molecular layer epitaxy

physica status solidi (c) ◽

10.1002/pssc.200983858 ◽

2010 ◽

Vol 7 (10) ◽

pp. 2510-2513 ◽

Cited By ~ 1

Author(s):

Takeo Ohno ◽

Yutaka Oyama ◽

Shota Sato

Keyword(s):

Thin Layer ◽

Molecular Layer ◽

Orientation Dependence ◽

Substrate Orientation

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Substrate-Orientation Dependence on Structure and Magnetic Properties of MnAs Epitaxial Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.l1100 ◽

1997 ◽

Vol 36 (Part 2, No. 8B) ◽

pp. L1100-L1103 ◽

Cited By ~ 31

Author(s):

Yoshitaka Morishita ◽

Koichi Iida ◽

Junya Abe ◽

Katsuaki Sato

Keyword(s):

Magnetic Properties ◽

Orientation Dependence ◽

Epitaxial Layers ◽

Substrate Orientation

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Substrate Orientation Dependence of Fe Doping in MOVPE-Grown InP

10.7567/ssdm.1993.c-3-2 ◽

1993 ◽

Author(s):

Tatsuya TAKEUCHI ◽

Susumu YAMAZAKI

Keyword(s):

Orientation Dependence ◽

Fe Doping ◽

Substrate Orientation

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Microstructure and interface control of GaN/MgAl2O4 grown by metalorganic chemical vapor deposition: Substrate-orientation dependence

Journal of Applied Physics ◽

10.1063/1.3606430 ◽

2011 ◽

Vol 110 (2) ◽

pp. 023504 ◽

Cited By ~ 9

Author(s):

G. He ◽

Shigefusa F. Chichibu ◽

T. Chikyow

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Orientation Dependence ◽

Substrate Orientation ◽

Interface Control ◽

Deposition Substrate ◽

Metalorganic Chemical

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