scholarly journals Theoretical Study of Ferroelectric Triglycine Sulphate (TGS) Crystal in External Electric Fields

Author(s):  
Trilok Chandra Upadhyay ◽  
Ashish Nautiyal

A modified two sub-lattice pseudospin-lattice coupled mode model of Mitsui et al [Phys. Rev., 111 (1958) 1259] by adding third, fourth order phonon anharmonic interaction and external electric field terms has been applied to ferroelectric triglycine sulphate crystal. Electric field dependence of ferroelectric, dielectric and acoustical properties has been studied. With the help of double time temperature dependent Green’s function method, expressions for shift, width, soft mode frequency, dielectric constant, loss tangent and acoustic attenuation have been derived. Numerically calculations have been made and results have been compared with experimental data reported by Bye et al [Ferroelectrics 4 (1974) 243] and Shreekumar et al [Ferroelectrics 160 (1994) 23] for TGS crystal and a good agreement has been observed.

2019 ◽  
Vol 14 (2) ◽  
Author(s):  
Anubhuti Mamgain ◽  
Trilok Chandra Upadhyay

With addition of third-and fourth-order phonon anharmonic interactions, and extra spin-lattice interaction term into pseudospin-lattice coupled mode (PLCM) model, MASD alum has been studied. Employing double time temperature dependent Green′s function technique expressions for shift and width of response function, normal mode frequency, dielectric constant and loss stangent have been derived for MASD alum. Numerical calculation has been done. Theoretical results have been compared with experimental results of Pepinsky et al. [16]. A good agreement has been found.


2019 ◽  
Vol 14 (2) ◽  
Author(s):  
Anubhuti Mamgain ◽  
Trilok Chandra Upadhyay

With addition of third-and fourth-order phonon anharmonic interactions, and extra spin-lattice interaction term into pseudospin-lattice coupled mode (PLCM) model, MASD alum has been studied. Employing double time temperature dependent Green′s function technique expressions for shift and width of response function, normal mode frequency, dielectric constant and loss stangent have been derived for MASD alum. Numerical calculation has been done. Theoretical results have been compared with experimental results of Pepinsky et al. [16]. A good agreement has been found.


1973 ◽  
Vol 51 (17) ◽  
pp. 1874-1881 ◽  
Author(s):  
B. S. Semwal ◽  
P. K. Sharma

The electric field dependence of the Curie temperature of a ferroelectric crystal in its paraelectric phase is investigated from the Silverman–Joseph Hamiltonian augmented with fourth-order phonon coordinates using the temperature dependent double-time Green's function technique. It is shown that the Curie temperature shifts to a lower value by the application of an electric field. This result agrees with the recent Raman scattering data of Worlock and Fleury for SrTiO3.


1972 ◽  
Vol 50 (8) ◽  
pp. 821-825 ◽  
Author(s):  
Peter W. Hewson ◽  
Garth Jones ◽  
Erich W. Vogt

A semi-phenomenological model of the interaction of positrons with atoms is outlined, and some model properties—enhancement factors, effective mass, and effective charge—are calculated using a local density approximation. These properties are used with a one parameter polarization potential to predict the electric field dependence and the temperature dependence of the positron annihilation rate in argon gas. Comparison of these predictions with experimental data shows good agreement for the electric field dependence, but the predicted temperature dependent effect is less than published experimental results. The model is also applied to helium, with unsatisfactory results, and a prediction of the electric field dependence of the positron annihilation rate in krypton is made.


1996 ◽  
Vol 421 ◽  
Author(s):  
J. S. Hwang ◽  
W. Y. Chou ◽  
S. L. Tyan ◽  
Y. C. Wang ◽  
H. Shen

AbstractThe built-in electric fields in a MBE grown δ-doped GaAs homojunction have been investigated by the techniques of photoreflectance and phase suppression. Two Franz-Keldysh oscillation features originating from two different fields in the structure superimpose with each other in the photoreflectance spectrum. By properly selecting the reference phase of the lock-in amplifier, one of the features can be suppressed, thus enabling us to determine the electric fields from two different regions. We have demonstrated that only two PR spectra, in-phase and outphase components, are needed to find the phase angle which suppresses one of the features. The electric field in the top layer is 3.5 ± 0.2 × 105 V/cm, which is in good agreement with theoretical calculation. The electric field in the buffer layer is 1.2 ± 0.1 × 104 V/cm, which suggests the existence of interface states at the buffer/substrate interface.


1995 ◽  
Vol 05 (03) ◽  
pp. 797-807 ◽  
Author(s):  
J. MOSQUERA ◽  
M. GÓMEZ-GESTEIRA ◽  
V. PÉREZ-MUÑUZURI ◽  
A.P. MUÑUZURI ◽  
V. PÉREZ-VILLAR

The electric field influence on pattern formation and traveling wave propagation is investigated in the framework of the Oregonator model. When an electric field is applied to a system that can suffer spatial instabilities, Turing and Turing-like patterns (traveling fronts that become stationary patterns when reaching a zero-flux boundary) are observed. On the other hand, when an electric field is applied to a system that cannot become unstable by spatial terms and where wavefronts are propagating in the absence of electric fields, the velocity of these wavefronts is modified and can even be reversed. This is in good agreement with previous experimental results.


Author(s):  
Yasuhide Shindo ◽  
Takayoshi Sasakura ◽  
Fumio Narita

This paper studies the dynamic electromechanical response of multilayered piezoelectric composites under ac electric fields from room to cryogenic temperatures for fuel injector applications. A shift in the morphotropic phase boundary (MPB) between the tetragonal and rhombohedral/monoclinic phases with decreasing temperature was determined using a thermodynamic model, and the temperature dependent piezoelectric coefficients were obtained. Temperature dependent coercive electric field was also predicted based on the domain wall energy. A phenomenological model of domain wall motion was then used in a finite element computation, and the nonlinear electromechanical fields of the multilayered piezoelectric composites from room to cryogenic temperatures, due to the domain wall motion and shift in the MPB, were calculated. In addition, experimental results on the ac electric field induced strain were presented to validate the predictions.


1971 ◽  
Vol 49 (7) ◽  
pp. 876-880 ◽  
Author(s):  
Jyoti Kamal ◽  
Satish Sharma

In this paper the authors have calculated Hall mobility, drift mobility, and Hall constant for a non-degenerate simple model semiconductor at low temperatures for an arbitrary electric field strength. Following Paranjape the modified distribution of phonons has been taken into account. The difference between the calculations of transport coefficients made by taking into account the modified phonon distribution and by not taking it into account is quite appreciable at high electric field. Calculations also show that for Ne = 1016/cm3 the mobility of electrons remains temperature dependent.


1999 ◽  
Vol 560 ◽  
Author(s):  
S. D. Ganichev ◽  
E. Ziemann ◽  
W. Prettl ◽  
A. A. Istratov ◽  
E. R. Weber

ABSTRACTThe electric field dependence of emission of carriers from deep impurities in semiconductors has been investigated applying static and terahertz electric fields. It is shown that at high electric field strengths carrier emission is dominated by phonon assisted tunneling which may easily be recognized by plotting the emission rate as a function of the square of the electric field strength in a log-lin plot giving a straight line. For charged impurities the transition from phonon assisted tunneling to Poole-Frenkel effect at low fields can be traced back.


2019 ◽  
Vol 9 (18) ◽  
pp. 3686 ◽  
Author(s):  
Zhaoyu Qin ◽  
Yunxiang Long ◽  
Zhenyu Shen ◽  
Cheng Chen ◽  
Liping Guo ◽  
...  

The normalized Townsend first ionization coefficient α/N and normalized attachment coefficient η/N in pure C4F7N were measured by using the steady-state Townsend (SST) method for a range of reduced electric fields E/N from 750 to 1150 Td at room temperature (20 °C). Meanwhile, the effective ionization coefficients are obtained. All SST experimental results show good agreement with pulsed Townsend (PT) experiment results. Comparisons of the critical electric fields of C4F7N with SF6 and other alternative gases such as c-C4F8 and CF3I indicate that C4F7N has a better insulation performance with a much higher normalized critical electric field at 959.19 Td.


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