scholarly journals Design and modeling of a photonic integrated device for optical vortex generation in a silicon waveguide

2021 ◽  
Vol 45 (3) ◽  
pp. 324-330
Author(s):  
R.V. Kutluyarov ◽  
D.M. Fatkhiev ◽  
I.V. Stepanov ◽  
E.P. Grakhova ◽  
V.S. Lyubopytov ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Phase Distribution ◽  
Silicon On Insulator ◽  
Technological Parameters ◽  
Grating Couplers ◽  
Photonic Integrated Circuit ◽  
Silicon Waveguide ◽  
Rectangular Waveguides ◽  
Integrated Device ◽  
Specific Phase

We propose and numerically verify a design of the photonic integrated circuit for in-plane generation of a 1st azimuthal order vortex mode in dielectric rectangular waveguides. Radiation is introduced into the proposed structure in a standard way through two grating couplers. Applying a mode coupling and specific phase shift, a field with the required amplitude-phase distribution is formed directly in the output waveguide. The geometric dimensions of the device are simulated and optimized to fit the technological parameters of the silicon-on-insulator platform.

Design and characteristics of reflectivity tunable mirror with MZI and loop waveguide on SOI

2021 ◽  
Author(s):  
Yutaka Makihara ◽  
Moataz Eissa ◽  
Tomohiro AMEMIYA ◽  
Nobuhiko Nishiyama
Keyword(s):  
Phase Shift ◽  
Coupling Coefficient ◽  
Integrated Circuit ◽  
Silicon Photonics ◽  
Silicon On Insulator ◽  
Zehnder Interferometer ◽  
Directional Couplers ◽  
Photonic Integrated Circuit ◽  
Active Elements ◽  
Measurement Results

Abstract To achieve a reconfigurable photonic integrated circuit with active elements, we proposed a reflectivity tunable mirror constructed using a Mach–Zehnder interferometer (MZI) with a micro heater and loop waveguide on a silicon photonics platform. In this paper, the principle of the operation, design, fabrication, and measurement results of the mirror are presented. In theory, the phase shift dependence of the mirror relies on the coupling coefficient of the directional couplers of the MZI. When the coupling coefficient κ2 was 0.5 and 0.15, the reflection could be turned on and off with a phase shift of π/2 and π, respectively. The reflection power of the fabricated mirror on the silicon on insulator (SOI) substrate was changed by more than 20 dB by a phase shift. In addition, it was demonstrated that the phase shift dependence of the mirror changes with the coupling coefficient of the fabricated devices.

Thermodynamic insights into Henry's constant in hyperthermal oxidation of silicon for fabricating optical waveguides

2021 ◽  
Author(s):  
Ting Yu ◽  
DeGui Sun
Keyword(s):  
Integrated Circuit ◽  
Optical Waveguides ◽  
Silicon On Insulator ◽  
Henry's Constant ◽  
Photonic Integrated Circuit ◽  
Local Oxidation ◽  
Waveguide Fabrication

Hyperthermal oxidation of silicon is envisaged to be an alternative to silicon-on-insulator (SOI) waveguide fabrication for photonic integrated circuit (PIC) devices, and thus the local oxidation of silicon (LOCOS) technique has attracted attention.

scholarly journals Focusing grating couplers for radio-frequency surface ion traps

2021 ◽  
Vol 2015 (1) ◽  
pp. 012001
Author(s):  
Timur Abbasov ◽  
Ivan Kazakov ◽  
Ivan Sherstov ◽  
Sergey Kontorov ◽  
Arkadi Shipulin ◽  
...  
Keyword(s):  
Laser Radiation ◽  
Radio Frequency ◽  
Circuit Design ◽  
Integrated Circuit ◽  
Ion Trap ◽  
Ion Traps ◽  
Integrated Circuit Design ◽  
Grating Couplers ◽  
Photonic Integrated Circuit ◽  
Laser Sources

Abstract We present a photonic integrated circuit design with multiple focusing grating couplers that can be used in a surface ion trap. This system allows transferring laser radiation from different laser sources to the ion trapped 240 μm above the surface for further manipulations.

scholarly journals Broadband Terahertz Photonic Integrated Circuit with Integrated Active Photonic Devices

Photonics ◽  
2021 ◽  
Vol 8 (11) ◽  
pp. 492
Author(s):  
Amlan kusum Mukherjee ◽  
Mingjun Xiang ◽  
Sascha Preu
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Near Field ◽  
Single Mode ◽  
Silicon On Insulator ◽  
High Resistivity ◽  
Active Components ◽  
Photonic Integrated Circuit ◽  
Active Devices ◽  
Frequency Coverage

Present-day photonic terahertz (100 GHz–10 THz) systems offer dynamic ranges beyond 100 dB and frequency coverage beyond 4 THz. They yet predominantly employ free-space Terahertz propagation, lacking integration depth and miniaturisation capabilities without sacrificing their extreme frequency coverage. In this work, we present a high resistivity silicon-on-insulator-based multimodal waveguide topology including active components (e.g., THz receivers) as well as passive components (couplers/splitters, bends, resonators) investigated over a frequency range of 0.5–1.6 THz. The waveguides have a single mode bandwidth between 0.5–0.75 THz; however, above 1 THz, these waveguides can be operated in the overmoded regime offering lower loss than commonly implemented hollow metal waveguides, operated in the fundamental mode. Supported by quartz and polyethylene substrates, the platform for Terahertz photonic integrated circuits (Tera-PICs) is mechanically stable and easily integrable. Additionally, we demonstrate several key components for Tera-PICs: low loss bends with radii ∼2 mm, a Vivaldi antenna-based efficient near-field coupling to active devices, a 3-dB splitter and a filter based on a whispering gallery mode resonator.

scholarly journals Reduction in Crosstalk Using Uniform Germanium Strips for Dense Integration of Photonic Waveguides

2021 ◽  
Author(s):  
Veer Chandra ◽  
Dablu Kumar ◽  
Rakesh Ranjan
Keyword(s):  
Integrated Circuit ◽  
Silicon On Insulator ◽  
Current Work ◽  
Coupling Length ◽  
Photonic Integration ◽  
Polarization Splitter ◽  
Photonic Integrated Circuit ◽  
Photonic Switches ◽  
Photonic Waveguides ◽  
The Impact

Abstract The requirement of low crosstalk between the neighboring waveguides should be considered essentially, in order to achieve the compact photonic integrated circuit (PIC), which includes photonic waveguides. Literature shows that the lower crosstalk can be realized by using the silicon-on-insulator (SOI) based waveguide, having an appropriate separation between them. The current work is focused on reducing the waveguide separation to further improve the photonic integration over the PICs. This has been achieved by inserting the germanium strips between the photonic waveguides. The investigations of the impact of variations in heights and widths of germanium strip have demonstrated that the crosstalk can be reduced by a significant amount, which provides noteworthy improvement in coupling length. The maximum coupling lengths of 81578 µm, 67099 µm, and 66810 µm have been achieved at their respective end-to-end separations of 300 nm, 250 nm, and 200 nm, and their corresponding minimum crosstalk values have been noted as -29.40 dB, -27.71 dB, and − 27.70 dB. Moreover, the analysis to realize the coupling length for Ge-strip, have been compared with the Si-, and SiN-strips. The approach presented in the current work can be utilized for the design of many compact photonic applications, such as polarization splitter, integrated photonic switches, etc.

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