scholarly journals Triple Langmuir Probe for Diagnosis of Plasma Produced by Dielectric Barrier Discharge of Parallel Plates in Atmospheric Pressure

2019 ◽  
Author(s):  
Ivan Alves de Souza ◽  
João Freire de Medeiros Neto ◽  
Antônia Karla Paixão Silveira ◽  
Thércio Henrique de carvalho Costa ◽  
Efrain Pantaleon Matamoros ◽  
...  
Keyword(s):  
Electron Temperature ◽  
Langmuir Probe ◽  
Electrical Characterization ◽  
Optical Emission ◽  
Parallel Plates ◽  
Electrical Measurements ◽  
Dbd Plasma ◽  
Diffuse Discharge ◽  
Lissajous Figures ◽  
Density Of Electrons

This work aimed to characterize a DBD plasma equipment through optical and electrical measurements, seeking to obtain a greater knowledge of the plasma production process and how it behaves through the adopted parameters, such as frequency and voltage applied between electrodes, at a fixed distance of 1.7 mm. In order to measure them, three different characterization techniques were applied. The first method was the Lissajous figures, a technique quite effective for a complete electrical characterization of DBD equipment. The second technique used was the Optical Emission Spectroscopy, a tool used for the diagnosis of plasma, being it possible to identify the excited species produced in filamentary and diffuse discharge in the plasma. And finally, the triple Langmuir probe technique was used to obtain the electron temperature and electron density. Based on this study, it was possible to identify the equipment efficiency in different regimes. The electron temperature measurement for both systems analyzed were 27.96 eV and 20.69 eV to the filamentary and diffuse regimes, respectively. The density of electrons number to these regimes were 1.09 × 1021 m−3 and 1.56 × 1021 m−3.

Characterization of Argon Plasma by Use of Optical Emission Spectroscopy and Langmuir Probe Measurements

2003 ◽  
Vol 17 (14) ◽  
pp. 2749-2759 ◽  
Author(s):  
Abdul Qayyum ◽  
M. Ikram ◽  
M. Zakaullah ◽  
A. Waheed ◽  
G. Murtaza ◽  
...  
Keyword(s):  
Electron Temperature ◽  
Flow Rate ◽  
Langmuir Probe ◽  
Gas Flow ◽  
Optical Emission ◽  
Filling Pressure ◽  
Emission Lines ◽  
Gas Flow Rate ◽  
Langmuir Probe Measurements ◽  
Probe Measurements

Spectroscopic and Langmuir probe measurements are presented to characterize the argon glow discharge plasma generated by a cost-effective 50 Hz AC power source. Optical emission spectra (400–700 nm) are recorded for different gas flow rates and filling pressures at constant power level. The plasma parameters (electron temperature and density) are deduced from the relative intensities of Ar-I and Ar-II lines. The variation in the intensity ratio of the selected emission lines, electron temperature and density is studied as a function of gas flow rate and filling pressure. Slight increase in the intensity ratio I2(426.62 nm )/I1(404.44 nm ) of the emission lines is observed whereas the electron temperature and density are found to decrease with increase in gas flow rate and filling pressure.

scholarly journals Langmuir Probe Diagnostics with Optical Emission Spectrometry (OES) for Coaxial Line Microwave Plasma

2020 ◽  
Vol 10 (22) ◽  
pp. 8117
Author(s):  
Chi Chen ◽  
Wenjie Fu ◽  
Chaoyang Zhang ◽  
Dun Lu ◽  
Meng Han ◽  
...  
Keyword(s):  
Electron Temperature ◽  
Langmuir Probe ◽  
Microwave Plasma ◽  
Optical Emission ◽  
Coaxial Line ◽  
Plasma Source ◽  
Optical Emission Spectrometry ◽  
Emission Spectrometry ◽  
Plasma Parameters ◽  
Current Voltage

The Langmuir probe is a feasible method to measure plasma parameters. However, as the reaction progresses in the discharged plasma, the contamination would be attached to the probe surface and lead to a higher incorrect electron temperature. Then, the electron density cannot be obtained. This paper reports a simple approach to combining the Langmuir probe and the optical emission spectrometry (OES), which can be used to obtain the electron temperature to solve this problem. Even the Langmuir probe is contaminative, the probe current–voltage (I–V) curve with the OES spectra also gives the approximate electron temperature and density. A homemade coaxial line microwave plasma source driven by a 2.45 GHz magnetron was adopted to verify this mothed, and the electron temperature and density in different pressure (40–80 Pa) and microwave power (400–800 W) were measured to verify that it is feasible.

In FAB 300mm Wafer Level Atomic Force Probe Characterization

2012 ◽  
Author(s):  
Terence Kane
Keyword(s):  
Electrical Characterization ◽  
Dark Field ◽  
Wafer Level ◽  
Electrical Measurements ◽  
Manufacturing Line ◽  
Atomic Force ◽  
Monitoring Tools ◽  
Voltage Contrast ◽  
The Cost ◽  
Non Destructive

Abstract A 300mm wafer atomic force prober (AFP) has been installed into IBM’s manufacturing line to enable rapid, nondestructive electrical identification of defects. Prior to this tool many of these defects could not detected until weeks or months later. Moving failure analysis to the FAB provides a means of complementing existing FAB inspection and defect review tools as well as providing independent, non-destructive electrical measurements at an early point in the manufacturing cycle [1] Once the wafer sites are non destructively AFP characterized, the wafer is returned to its front opening unified pod (FOUP) carrier and may be reintroduced into the manufacturing line without disruption for further inspection or processing. Whole wafer atomic force probe electrical characterization has been applied to 32nm, 28nm, 20nm and 14nm node technologies. In this paper we explore the cost benefits of performing non-destructive AFP measurements on whole wafers. We have found the methodology of employing a whole wafer AFP tool complements existing in-line manufacturing monitoring tools such as brightfield/dark field optical inspection, SEM in-line inspection and in-line E-beam voltage contrast inspection (EBI).

scholarly journals Study of the Molecule Adsorption Process during the Molecular Doping

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1899
Author(s):  
Mattia Pizzone ◽  
Maria Grazia Grimaldi ◽  
Antonino La La Magna ◽  
Neda Rahmani ◽  
Silvia Scalese ◽  
...  
Keyword(s):  
Density Functional ◽  
Electrical Characterization ◽  
Molecular Surface ◽  
Doping Profile ◽  
Electrical Measurements ◽  
Self Assembled Monolayer ◽  
Depth Study ◽  
Molecular Doping ◽  
Dopant Atoms ◽  
Molecular Layers

Molecular Doping (MD) involves the deposition of molecules, containing the dopant atoms and dissolved in liquid solutions, over the surface of a semiconductor before the drive-in step. The control on the characteristics of the final doped samples resides on the in-depth study of the molecule behaviour once deposited. It is already known that the molecules form a self-assembled monolayer over the surface of the sample, but little is known about the role and behaviour of possible multiple layers that could be deposited on it after extended deposition times. In this work, we investigate the molecular surface coverage over time of diethyl-propyl phosphonate on silicon, by employing high-resolution morphological and electrical characterization, and examine the effects of the post-deposition surface treatments on it. We present these data together with density functional theory simulations of the molecules–substrate system and electrical measurements of the doped samples. The results allow us to recognise a difference in the bonding types involved in the formation of the molecular layers and how these influence the final doping profile of the samples. This will improve the control on the electrical properties of MD-based devices, allowing for a finer tuning of their performance.

scholarly journals Dayside electron temperature and density profiles at Mars: First results from the MAVEN Langmuir probe and waves instrument

2015 ◽  
Vol 42 (21) ◽  
pp. 8846-8853 ◽  
Author(s):  
R. E. Ergun ◽  
M. W. Morooka ◽  
L. A. Andersson ◽  
C. M. Fowler ◽  
G. T. Delory ◽  
...  
Keyword(s):  
Electron Temperature ◽  
Langmuir Probe ◽  
Density Profiles ◽  
First Results

scholarly journals Machine Learning Prediction of Electron Density and Temperature from Optical Emission Spectroscopy in Nitrogen Plasma

Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1221
Author(s):  
Jun-Hyoung Park ◽  
Ji-Ho Cho ◽  
Jung-Sik Yoon ◽  
Jung-Ho Song
Keyword(s):  
Machine Learning ◽  
Electron Temperature ◽  
Real Time ◽  
Electron Density ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Plasma Parameters ◽  
Plasma Nitridation

We present a non-invasive approach for monitoring plasma parameters such as the electron temperature and density inside a radio-frequency (RF) plasma nitridation device using optical emission spectroscopy (OES) in conjunction with multivariate data analysis. Instead of relying on a theoretical model of the plasma emission to extract plasma parameters from the OES, an empirical correlation was established on the basis of simultaneous OES and other diagnostics. Additionally, we developed a machine learning (ML)-based virtual metrology model for real-time Te and ne monitoring in plasma nitridation processes using an in situ OES sensor. The results showed that the prediction accuracy of electron density was 97% and that of electron temperature was 90%. This method is especially useful in plasma processing because it provides in-situ and real-time analysis without disturbing the plasma or interfering with the process.

scholarly journals Diagnostics of low-pressure capacitively coupled RF discharge argon plasma

2019 ◽  
Vol 13 (27) ◽  
pp. 76-82
Author(s):  
Kadhim A. Aadim
Keyword(s):  
Electron Temperature ◽  
Electron Density ◽  
Langmuir Probe ◽  
Gas Flow ◽  
Low Pressure ◽  
Gas Pressure ◽  
Rf Discharge ◽  
Electrode Gap ◽  
Probe Characteristic ◽  
Capacitively Coupled

Low-pressure capacitively coupled RF discharge Ar plasma has been studied using Langmuir probe. The electron temperature, electron density and Debay length were calculated under different pressures and electrode gap. In this work the RF Langmuir probe is designed using 4MHz filter as compensation circuit and I-V probe characteristic have been investigated. The pressure varied from 0.07 mbar to 0.1 mbar while electrode gap varied from 2-5 cm. The plasma was generated using power supply at 4MHz frequency with power 300 W. The flowmeter is used to control Argon gas flow in the range of 600 standard cubic centimeters per minute (sccm). The electron temperature drops slowly with pressure and it's gradually decreased when expanding the electrode gap. As the gas pressure increases, the plasma density rises slightly at low gas pressure while it drops little at higher gas pressure. The electron density decreases rapidly with expand distances between electrodes.

scholarly journals Electron temperature in nighttime sporadic E layer at mid-latitude

2008 ◽  
Vol 26 (3) ◽  
pp. 533-541 ◽  
Author(s):  
K.-I. Oyama ◽  
T. Abe ◽  
H. Mori ◽  
J. Y. Liu
Keyword(s):  
Heat Source ◽  
Electron Temperature ◽  
Physical Parameter ◽  
Langmuir Probe ◽  
Present Theory ◽  
Height Range ◽  
Neutral Temperature ◽  
Sporadic E Layer ◽  
Sporadic E ◽  
Parameter Values

Abstract. Electron temperature in the sporadic E layer was measured with a glass-sealed Langmuir probe at a mid-latitude station in Japan in the framework of the SEEK (Sporadic E Experiment over Kyushu)-2 campaign which was conducted in August 2002. Important findings are two fold: (1) electron temperature and electron density vary in the opposite sense in the height range of 100–108 km, and electron temperature in the Es layer is lower than that of ambient plasma, (2) electron temperature in these height ranges is higher than the possible range of neutral temperature. These findings strongly suggest that the heat source that elevates electron temperature much higher than possible neutral temperature exists at around 100 km, and/or that the physical parameter values, which are used in the present theory to calculate electron temperature, are not proper.

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