scholarly journals Probabilistic Inference with Interval Probabilities

2020 ◽  
Author(s):  
Oleg Uzhga-Rebrov ◽  
Galina Kuleshova
Keyword(s):  
Probabilistic Inference ◽  
Mathematical Apparatus ◽  
Practical Applications ◽  
Inference Problems ◽  
Probability Trees

Probabilistic inference problems have very broad practical applications. To solve this kind of problems under conditions of certainty, an effective mathematical apparatus has been developed. In real situations, obtaining deterministic estimates of relevant probabilities is often difficult; therefore, problems with handling uncertain estimates of probabilities appear. This paper examines the problem of probabilistic inference with probability trees provided that the initial probabilities are given in the form of intervals of their possible values.

scholarly journals Efficient Symbolic Integration for Probabilistic Inference

2018 ◽  
Author(s):  
Samuel Kolb ◽  
Martin Mladenov ◽  
Scott Sanner ◽  
Vaishak Belle ◽  
Kristian Kersting
Keyword(s):  
Graphical Models ◽  
Probabilistic Inference ◽  
Computational Cost ◽  
Inference Problems ◽  
Inference Algorithms ◽  
Model Counting ◽  
Probability Spaces ◽  
Weighted Model ◽  
Computational Reduction ◽  
Parametrized Solutions

Weighted model integration (WMI) extends weighted model counting (WMC) to the integration of functions over mixed discrete-continuous probability spaces. It has shown tremendous promise for solving inference problems in graphical models and probabilistic programs. Yet, state-of-the-art tools for WMI are generally limited either by the range of amenable theories, or in terms of performance. To address both limitations, we propose the use of extended algebraic decision diagrams (XADDs) as a compilation language for WMI. Aside from tackling typical WMI problems, XADDs also enable partial WMI yielding parametrized solutions. To overcome the main roadblock of XADDs -- the computational cost of integration -- we formulate a novel and powerful exact symbolic dynamic programming (SDP) algorithm that seamlessly handles Boolean, integer-valued and real variables, and is able to effectively cache partial computations, unlike its predecessor. Our empirical results demonstrate that these contributions can lead to a significant computational reduction over existing probabilistic inference algorithms.

scholarly journals PROBABILISTIC INFERENCE FOR INTERVAL PROBABILITIES IN DECISION-MAKING PROCESSES

2019 ◽  
Vol 2 ◽  
pp. 165
Author(s):  
Oļegs Uzhga-Rebrov ◽  
Galina Kuleshova
Keyword(s):  
Decision Making ◽  
Visual Representation ◽  
Probabilistic Inference ◽  
The State ◽  
Target Information ◽  
Bayes Formula ◽  
Decision Making Processes ◽  
Probability Trees

The present paper considers one approach to Bayes’ formula based probabilistic inference under interval values of relevant probabilities; the necessity of it is caused by the impossibility to obtain reliable deterministic values of the required probabilistic evaluations. The paper shows that the approach proves to be the best from the viewpoint of the required amount of calculations and visual representation of the results. The execution of the algorithm of probabilistic inference is illustrated using a classical task of decision making related to oil mining. For visualisation purposes, the state of initial and target information is modelled using probability trees. 

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

1250-kilovolt scanning transmission electron microscope

1984 ◽  
Vol 42 ◽  
pp. 624-625
Author(s):  
T. Imura ◽  
S. Maruse ◽  
K. Mihama ◽  
M. Iseki ◽  
M. Hibino ◽  
...  
Keyword(s):  
High Voltage ◽  
Electron Probe ◽  
Scanning Transmission Electron Microscope ◽  
Pressure Vessels ◽  
Practical Applications ◽  
Voltage Generator ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
New Applications ◽  
High Voltage Generator

Ultra high voltage STEM has many inherent technical advantages over CTEM. These advantages include better signal detectability and signal processing capability. It is hoped that it will explore some new applications which were previously not possible. Conventional STEM (including CTEM with STEM attachment), however, has been unable to provide these inherent advantages due to insufficient performance and engineering problems. Recently we have developed a new 1250 kV STEM and completed installation at Nagoya University in Japan. It has been designed to break through conventional engineering limitations and bring about theoretical advantage in practical applications.In the design of this instrument, we exercised maximum care in providing a stable electron probe. A high voltage generator and an accelerator are housed in two separate pressure vessels and they are connected with a high voltage resistor cable.(Fig. 1) This design minimized induction generated from the high voltage generator, which is a high frequency Cockcroft-Walton type, being transmitted to the electron probe.

Characterization of intergranular cuprous oxide in polycrystalline YBa2Cu3O7-x

1988 ◽  
Vol 46 ◽  
pp. 880-881
Author(s):  
Bradley L. Thiel ◽  
Chan Han R. P. ◽  
Kurosky L. C. Hutter ◽  
I. A. Aksay ◽  
Mehmet Sarikaya
Keyword(s):  
Grain Boundary ◽  
Cuprous Oxide ◽  
Room Temperature ◽  
Boundary Phase ◽  
Spectroscopic Techniques ◽  
Transition Width ◽  
Practical Applications ◽  
Thin Foils ◽  
Superconducting Oxides

The identification of extraneous phases is important in understanding of high Tc superconducting oxides. The spectroscopic techniques commonly used in determining the origin of superconductivity (such as RAMAN, XPS, AES, and EXAFS) are surface-sensitive. Hence a grain boundary phase several nanometers thick could produce irrelevant spectroscopic results and cause erroneous conclusions. The intergranular phases present a major technological consideration for practical applications. In this communication we report the identification of a Cu2O grain boundary phase which forms during the sintering of YBa2Cu3O7-x (1:2:3 compound).Samples are prepared using a mixture of Y2O3. CuO, and BaO2 powders dispersed in ethanol for complete mixing. The pellets pressed at 20,000 psi are heated to 950°C at a rate of 5°C per min, held for 1 hr, and cooled at 1°C per min to room temperature. The samples show a Tc of 91K with a transition width of 2K. In order to prevent damage, a low temperature stage is used in milling to prepare thin foils which are then observed, using a liquid nitrogen holder, in a Philips 430T at 300 kV.

Resolution and measurement in the scanning electron microscope

1987 ◽  
Vol 45 ◽  
pp. 534-537 ◽  
Author(s):  
Michael T. Postek
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Engineering Design ◽  
Resolving Power ◽  
Practical Applications ◽  
Instrument Resolution ◽  
Accurate Definition ◽  
Definition Of ◽  
Scanning Electron ◽  
Better Than

The term ultimate resolution or resolving power is the very best performance that can be obtained from a scanning electron microscope (SEM) given the optimum instrumental conditions and sample. However, as it relates to SEM users, the conventional definitions of this figure are ambiguous. The numbers quoted for the resolution of an instrument are not only theoretically derived, but are also verified through the direct measurement of images on micrographs. However, the samples commonly used for this purpose are specifically optimized for the measurement of instrument resolution and are most often not typical of the sample used in practical applications.SEM RESOLUTION. Some instruments resolve better than others either due to engineering design or other reasons. There is no definitively accurate definition of how to quantify instrument resolution and its measurement in the SEM.

In situ TEM Studies of agglomeration of sub-nanometer Ru layers in Ru/C multilayers

1992 ◽  
Vol 50 (1) ◽  
pp. 256-257
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright
Keyword(s):  
Layered Structure ◽  
Driving Force ◽  
High Energy ◽  
Superior Performance ◽  
In Situ Tem ◽  
Rayleigh Instability ◽  
Practical Applications ◽  
Transmission Electron ◽  
Diffraction Patterns

Nanometer period Ru/C multilayers are one of the prime candidates for normal incident reflecting mirrors at wavelengths < 10 nm. Superior performance, which requires uniform layers and smooth interfaces, and high stability of the layered structure under thermal loadings are some of the demands in practical applications. Previous studies however show that the Ru layers in the 2 nm period Ru/C multilayer agglomerate upon moderate annealing, and the layered structure is no longer retained. This agglomeration and crystallization of the Ru layers upon annealing to form almost spherical crystallites is a result of the reduction of surface or interfacial energy from die amorphous high energy non-equilibrium state of the as-prepared sample dirough diffusive arrangements of the atoms. Proposed models for mechanism of thin film agglomeration include one analogous to Rayleigh instability, and grain boundary grooving in polycrystalline films. These models however are not necessarily appropriate to explain for the agglomeration in the sub-nanometer amorphous Ru layers in Ru/C multilayers. The Ru-C phase diagram shows a wide miscible gap, which indicates the preference of phase separation between these two materials and provides an additional driving force for agglomeration. In this paper, we study the evolution of the microstructures and layered structure via in-situ Transmission Electron Microscopy (TEM), and attempt to determine the order of occurence of agglomeration and crystallization in the Ru layers by observing the diffraction patterns.

A New Detector System For The HB5 Stem Instrument

1985 ◽  
Vol 43 ◽  
pp. 134-135
Author(s):  
J.M. Cowley
Keyword(s):  
Dark Field ◽  
Detector System ◽  
Electron Holography ◽  
Small Specimen ◽  
Bright Field ◽  
Multiple Images ◽  
Practical Applications ◽  
Wide Range ◽  
Diffraction Patterns ◽  
Operational Modes

The HB5 STEM instrument at ASU has been modified previously to include an efficient two-dimensional detector incorporating an optical analyser device and also a digital system for the recording of multiple images. The detector system was built to explore a wide range of possibilities including in-line electron holography, the observation and recording of diffraction patterns from very small specimen regions (having diameters as small as 3Å) and the formation of both bright field and dark field images by detection of various portions of the diffraction pattern. Experience in the use of this system has shown that sane of its capabilities are unique and valuable. For other purposes it appears that, while the principles of the operational modes may be verified, the practical applications are limited by the details of the initial design.

Practical applications of scanning tunneling microscopy

1989 ◽  
Vol 47 ◽  
pp. 18-19
Author(s):  
D. R. Denley
Keyword(s):  
High Resolution ◽  
Scanning Tunneling Microscopy ◽  
Quantitative Information ◽  
Digital Data ◽  
Scanning Tunneling ◽  
Ambient Atmosphere ◽  
Tunneling Microscopy ◽  
Clear Trend ◽  
Practical Applications ◽  
Promising Tool

Scanning tunneling microscopy (STM) has recently been introduced as a promising tool for analyzing surface atomic structure. We have used STM for its extremely high resolution (especially the direction normal to surfaces) and its ability for imaging in ambient atmosphere. We have examined surfaces of metals, semiconductors, and molecules deposited on these materials to achieve atomic resolution in favorable cases.When the high resolution capability is coupled with digital data acquisition, it is simple to get quantitative information on surface texture. This is illustrated for the measurement of surface roughness of evaporated gold films as a function of deposition temperature and annealing time in Figure 1. These results show a clear trend for which the roughness, as well as the experimental deviance of the roughness is found to be minimal for evaporation at 300°C. It is also possible to contrast different measures of roughness.

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