μc-Si:H n-type doped layers resistant against HWCVD i-layers deposited at high temperature and high growth rate

AbstractThe band gap of Ga0.5In0.5P is studied as a function of growth temperature, growth rate, and substrate misorientation. As each of these parameters is independently varied the band gap first decreases, then increases, resulting in “U” shaped curves. Each “U” shaped curve shifts if any other growth parameter is varied. The data presented here can be divided into two regions of parameter space. In the low temperature, low substrate misorientation, high growth rate region, the band gap is shown to decrease with increasing growth temperature, decreasing growth rate, and increasing substrate misorientation. In the high temperature, high substrate misorientation, low growth rate region, the opposite trends are observed. The implications of these data on the ordering mechanism are discussed.

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Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

10.20944/preprints202012.0678.v1 ◽

2020 ◽

Author(s):

Dario Schiavon ◽

Elżbieta Litwin-Staszewska ◽

Rafał Jakieła ◽

Szymon Grzanka ◽

Piotr Perlin

Keyword(s):

Growth Rate ◽

High Temperature ◽

Low Temperature ◽

Surface Morphology ◽

Growth Temperature ◽

High Growth ◽

Growth Conditions ◽

High Growth Rate ◽

Pit Formation ◽

Movpe Growth

The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

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Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method

Applied Physics Express ◽

10.35848/1882-0786/abace0 ◽

2020 ◽

Vol 13 (9) ◽

pp. 095502

Author(s):

Norihiro Hoshino ◽

Isaho Kamata ◽

Takahiro Kanda ◽

Yuichiro Tokuda ◽

Hironari Kuno ◽

...

Keyword(s):

Growth Rate ◽

High Temperature ◽

High Growth ◽

High Growth Rate ◽

Bulk Crystal ◽

Source Method ◽

Gas Source ◽

Dislocation Densities ◽

High Temperature Gas

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Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source Method

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.59 ◽

2014 ◽

Vol 778-780 ◽

pp. 59-62 ◽

Cited By ~ 3

Author(s):

Isaho Kamata ◽

Norihiro Hoshino ◽

Yuichiro Tokuda ◽

Emi Makino ◽

Jun Kojima ◽

...

Keyword(s):

Growth Rate ◽

Crystal Growth ◽

High Temperature ◽

High Growth ◽

High Growth Rate ◽

High Quality ◽

Source Method ◽

Gas Source ◽

Fast Growth Rate ◽

High Temperature Gas

This paper reports on evidence of high-quality and very fast 4H-SiC crystal growth achieved using a high-temperature gas source method. The formation of threading screw dislocations (TSDs) during crystal growth was examined by comparing synchrotron X-ray topography images taken for a seed and grown crystals, while the generation of a high density of new TSDs is observed under improper growth condition. High-quality crystal growth retaining the TSD density of the seed crystal was accomplished under an improved condition, even for a very high growth rate of 2.1 mm/h.

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Enhanced optical properties of chemical vapor deposited single crystal diamond by low-pressure/high-temperature annealing

Proceedings of the National Academy of Sciences ◽

10.1073/pnas.0808230105 ◽

2008 ◽

Vol 105 (46) ◽

pp. 17620-17625 ◽

Cited By ~ 73

Author(s):

Yu-fei Meng ◽

Chih-shiue Yan ◽

Joseph Lai ◽

Szczesny Krasnicki ◽

Haiyun Shu ◽

...

Keyword(s):

Growth Rate ◽

Optical Properties ◽

High Temperature ◽

Single Crystal ◽

Defect Structure ◽

Chemical Vapor ◽

High Growth ◽

High Growth Rate ◽

Nitrogen Vacancy ◽

Single Crystal Diamond

Single crystal diamond produced by chemical vapor deposition (CVD) at very high growth rates (up to 150 μm/h) has been successfully annealed without graphitization at temperatures up to 2200 °C and pressures <300 torr. Crystals were annealed in a hydrogen environment by using microwave plasma techniques for periods of time ranging from a fraction of minute to a few hours. This low-pressure/high-temperature (LPHT) annealing enhances the optical properties of this high-growth rate CVD single crystal diamond. Significant decreases are observed in UV, visible, and infrared absorption and photoluminescence spectra. The decrease in optical absorption after the LPHT annealing arises from the changes in defect structure associated with hydrogen incorporation during CVD growth. There is a decrease in sharp line spectral features indicating a reduction in nitrogen-vacancy-hydrogen (NVH−) defects. These measurements indicate an increase in relative concentration of nitrogen-vacancy (NV) centers in nitrogen-containing LPHT-annealed diamond as compared with as-grown CVD material. The large overall changes in optical properties and the specific types of alterations in defect structure induced by this facile LPHT processing of high-growth rate single-crystal CVD diamond will be useful in the creation of diamond for a variety of scientific and technological applications.

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Growth of high-quality AlN at high growth rate by high-temperature MOVPE

physica status solidi (c) ◽

10.1002/pssc.200565357 ◽

2006 ◽

Vol 3 (6) ◽

pp. 1617-1619 ◽

Cited By ~ 33

Author(s):

N. Fujimoto ◽

T. Kitano ◽

G. Narita ◽

N. Okada ◽

K. Balakrishnan ◽

...

Keyword(s):

Growth Rate ◽

High Temperature ◽

High Growth ◽

High Growth Rate ◽

High Quality

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Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

Materials ◽

10.3390/ma14020354 ◽

2021 ◽

Vol 14 (2) ◽

pp. 354

Author(s):

Dario Schiavon ◽

Elżbieta Litwin-Staszewska ◽

Rafał Jakieła ◽

Szymon Grzanka ◽

Piotr Perlin

Keyword(s):

Growth Rate ◽

High Temperature ◽

Low Temperature ◽

Surface Morphology ◽

Growth Temperature ◽

High Growth ◽

Growth Conditions ◽

High Growth Rate ◽

Pit Formation ◽

Movpe Growth

The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

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Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.323 ◽

2013 ◽

Vol 740-742 ◽

pp. 323-326

Author(s):

Kassem Alassaad ◽

François Cauwet ◽

Davy Carole ◽

Véronique Soulière ◽

Gabriel Ferro

Keyword(s):

Growth Rate ◽

High Growth ◽

High Growth Rate ◽

Carbon Precursor ◽

Growth Limitation ◽

Vapor Liquid Solid ◽

Partial Pressures ◽

Vapor Liquid Solid Mechanism ◽

Vls Growth ◽

Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

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