scholarly journals Design and Self-Consistent Schrodinger-Poisson Model Simulation of Ultra-Thin Si-Channel Nanowire FET

2021 ◽  
Author(s):  
Chhaya Verma ◽  
Jeetendra Singh
Keyword(s):  
Electronic Device ◽  
Model Simulation ◽  
Quantum Effect ◽  
Poisson Model ◽  
Oxide Thickness ◽  
Equation Model ◽  
Quantum Confinement Effects ◽  
Wave Nature ◽  
Self Consistent ◽  
Mechanical Models

Abstract Since at the regime of nanometer, the quantum confinement effects are observed and the wave nature of electrons is more dominant. Therefore, the classical approach of current formulation in mesoelectonics and nanoelectronics results in inaccuracy as it does not consider the quantum effect, which is only applicable for the bulk electronic device. For accurate modeling and simulation of nanoelectronics, device atomic-level quantum mechanical models are required. In this work, an ultra-thin (3 nm diameter) Silicon- channel Cylindrical Nanowire FET (CNWFET) is designed and simulated by invoking non-equilibrium green function (NEGF) formalism and self-consistent Schrodinger-Poisson’s equation model. Then impact variation of temperature, oxide thickness, and metal work function variation in the proposed NWFET is investigated to analyze the distinct performance parameters of the device e.g. threshold voltage (Vth) drain induced barrier lowering (DIBL), sub-threshold swing (SS), and ION/IOFF ratio. The designed device exhibits reliable results and shows a SS of 57.8 mV/decade and ION to IOFF ratio of order 109 at room temperature.

scholarly journals Empirical Framework for a Relative Sustainability Evaluation of Urbanization on the Water–Energy–Food Nexus Using Simultaneous Equation Analysis

2019 ◽  
Vol 16 (6) ◽  
pp. 901 ◽  
Author(s):  
Chihhao Fan ◽  
Chun-Yueh Lin ◽  
Ming-Che Hu
Keyword(s):  
Negative Impact ◽  
Model Simulation ◽  
Supply And Demand ◽  
Simultaneous Equation ◽  
Equation Model ◽  
Environmental Conservation ◽  
Population Increase ◽  
Weighting Coefficient ◽  
Energy Structure ◽  
On The Road

The water–energy–food (WEF) nexus attracts much attention due to the elevated public concern regarding environmental conservation and sustainability. As we head into a new era of civilization, population increase and modernized lifestyles have led to an increasing need for water, energy, and food. However, severe hydrological precipitation significantly impacts agricultural harvest, and such influence becomes more apparent under the influence of climate change. Meanwhile, the major method of electricity generation (i.e., fossil fuel burning) has a negative impact on the environment. These inevitable threats are crucial and have to be dealt with for a society on the road towards sustainability. In the present study, an integrated evaluation of the WEF nexus was conducted for two areas with different levels of urbanization using empirical multiple linear regression in a simultaneous equation model (SEM). By incorporating the collected data into the SEM, the weighting coefficient of each identified variable was obtained, and the nexus implication was assessed in model simulation at different scenarios considering the population growth, agro-technology advancement, energy structure improvement, and available water resources. In the simulated results, three observations were found: (1) the rural area is more sustainable than the urban one; (2) the sustainability for both the investigated areas is significantly subject to their water supply and demand; and (3) food production was found to have a less important effect on the sustainable development of the urban area. This study identified the key factors in the WEF nexus exploration, which are economically and environmentally important for resource allocation. An empirical model was developed to correlate sustainable achievement with WEF management, as well as strategic policies that should be implemented under the pressure of urbanization.

A New Computational Model for Expiratory Flow From Nonhomogeneous Human Lungs

1989 ◽  
Vol 111 (3) ◽  
pp. 200-205 ◽  
Author(s):  
R. K. Lambert
Keyword(s):  
Mechanical Properties ◽  
Model Simulation ◽  
Homogeneous Model ◽  
Equation Model ◽  
Alveolar Pressure ◽  
Mechanical Problem ◽  
Peripheral Airways ◽  
Human Lungs ◽  
Experimental Findings ◽  
Good Agreement

A model has been developed for expiration from human lungs in which the mechanical properties of the airways and parenchyma can be varied between regions. The model is based on an existing homogeneous model. The fluid mechanical problem of the merging of dissimilar flows from adjacent regions is underspecified by the conservation laws of mass and energy. An existing, empirically derived result, provides the required extra equation. Model simulation of a nonhomogeneously distributed mild constriction of the peripheral airways gives results for maximal flows and alveolar pressure differences which are in good agreement with recent experimental findings.

Analysis of MOS Device Capacitance-Voltage Characteristics Based on the Self-Consistent Solution of the Schrödinger and Poisson Equations

1999 ◽  
Vol 592 ◽  
Author(s):  
C. Raynaud ◽  
J.L. Autran ◽  
P. Masson ◽  
M. Bidaud ◽  
A. Poncet
Keyword(s):  
Quantum Effect ◽  
Mesh Size ◽  
Oxide Semiconductor ◽  
Uniform Mesh ◽  
Poisson Equations ◽  
Capacitance Voltage ◽  
Self Consistent ◽  
Consistent Solution ◽  
The One ◽  
Mos Device

ABSTRACTThe one-dimensional Schridinger and Poisson equations have been numerically solved in metal-oxide-semiconductor devices using a three-point finite difference scheme with a non-uniform mesh size. The capacitance-voltage characteristic of the structure has been calculated via this self-consistent approach and results have been compared with data obtained from the resolution of Poisson equation using different approximated methods based on the Boltzmann statistic with and without a first order quantum effect correction or the exact Fermi-Dirac statistic. The present work permits to evaluate and quantify the errors made by these approximations in determining the thickness of ultra-thin oxides.

Second Screen and Sports: A Structural Investigation Into Team Identification and Efficacy

2015 ◽  
Vol 5 (3) ◽  
pp. 288-310 ◽  
Author(s):  
Nicole R. Cunningham ◽  
Matthew S. Eastin
Keyword(s):  
Self Efficacy ◽  
Structural Equation ◽  
Structural Investigation ◽  
Electronic Device ◽  
Positive Impact ◽  
Equation Model ◽  
Team Identification ◽  
Second Screen ◽  
The Relationship ◽  
Screen Use

A second screen is defined as a second electronic device used by audience members while watching a television program. While second screen use during sport programming is on the rise, current understanding of second screen use and engagement is lacking. Thus, in an attempt to extend Niche Theory, the current study employs a structural equation model to further understanding of second screen use. Further, to better understand the outcome of second screen use, the current study examines the relationship between team identification, engagement, and self-efficacy with second screen use. Results suggest that engagement and self-efficacy both have a direct influence on attitude, whereas team identification and self-efficacy have a positive impact on engagement. Each of the hypothesized relationships is tested individually as well as in a theoretically constructed model of engagement and use.

TEM study of CdS nanocrystals formed in SiO2 by ion implantation

1996 ◽  
Vol 54 ◽  
pp. 236-237
Author(s):  
Jane G. Zhu ◽  
C. W. White ◽  
J. D. Budai ◽  
S. P. Withrow
Keyword(s):  
Ion Implantation ◽  
Electronic Device ◽  
Semiconductor Nanocrystals ◽  
Optical Nonlinearity ◽  
Silicon Substrates ◽  
Cds Nanocrystals ◽  
Quantum Confinement Effects ◽  
Transmission Electron ◽  
Device Applications ◽  
Ion Profiles

Quantum confinement effects and enhanced optical nonlinearity are expected from II-VI semiconductor nanocrystals, which are important for novel opto-electronic device applications. The ion implantation method has been used in our study to form CdS nanocrystals inside amorphous SiO2. The CdS nanocrystals were studied by transmission electron microscopy (TEM).The samples were implanted (at room temperature) with equal doses (1×1017 ions/cm2) of Cd and S into a SiO2 layer on (100) silicon substrates and then annealed under Ar + 4%H2 ambient at 800°C and 1000°C for 1 h. Implant energies were chosen to overlap the Cd and S ion profiles in the middle of the oxide layer. CdS precipitates are formed during the thermal annealing.The effect of annealing temperatures on the nanocrystals size distributions are revealed in Figs. 1 and 2. The sizes of CdS nanocrystals are in the range of 2 - 11 nm for the sample annealed at 800°C, and in the range of a few to 16 nm for the sample annealed at 1000°C.

scholarly journals A Self-Consistent Model for Thermal Oxidation of Silicon at Low Oxide Thickness

2016 ◽  
Vol 2016 ◽  
pp. 1-13 ◽  
Author(s):  
Gerald Gerlach ◽  
Karl Maser
Keyword(s):  
Thermal Oxidation ◽  
Silicon Oxide ◽  
Surface Concentration ◽  
Oxide Thickness ◽  
Oxidation Time ◽  
Fickian Diffusion ◽  
Oxide Surface ◽  
Microelectronic Fabrication ◽  
Consistent Model ◽  
Self Consistent

Thermal oxidation of silicon belongs to the most decisive steps in microelectronic fabrication because it allows creating electrically insulating areas which enclose electrically conductive devices and device areas, respectively. Deal and Grove developed the first model (DG-model) for the thermal oxidation of silicon describing the oxide thickness versus oxidation time relationship with very good agreement for oxide thicknesses of more than 23 nm. Their approach named as general relationship is the basis of many similar investigations. However, measurement results show that the DG-model does not apply to very thin oxides in the range of a few nm. Additionally, it is inherently not self-consistent. The aim of this paper is to develop a self-consistent model that is based on the continuity equation instead of Fick’s law as the DG-model is. As literature data show, the relationship between silicon oxide thickness and oxidation time is governed—down to oxide thicknesses of just a few nm—by a power-of-time law. Given by the time-independent surface concentration of oxidants at the oxide surface, Fickian diffusion seems to be neglectable for oxidant migration. The oxidant flux has been revealed to be carried by non-Fickian flux processes depending on sites being able to lodge dopants (oxidants), the so-called DOCC-sites, as well as on the dopant jump rate.

scholarly journals Inclusion of Quantum Confinement Effects in Self-Consistent Monte Carlo Device Simulations

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 21-27
Author(s):  
R. W. Kelsall ◽  
A. J. Lidsey
Keyword(s):  
Monte Carlo ◽  
Quantum Confinement ◽  
Monte Carlo Model ◽  
Explicit Calculation ◽  
Quantum Model ◽  
Confinement Effects ◽  
New Model ◽  
Monte Carlo Algorithms ◽  
Quantum Confinement Effects ◽  
Self Consistent

The design of Monte Carlo FET simulations is discussed, with specific attention to the methods used to describe quantum confinement effects. A new model is presented, which employs self-consistent coupling of Schrodinger, Poisson and Monte Carlo algorithms, and explicit calculation of the scattering rates between confined and unconfined states. Comparisons between the new model and a standard semi-classical Monte Carlo model are presented for a 0.1 μm gate-length In0.52Al0.48As/In0.53 Ga0.47As/InP MODFET. Whilst the quantum model yields minor corrections in the predicted output characteristics, it is found that these results can be achieved without repeated iterations of the Schrodinger equation.

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