Comparison of Analog Performance of AlN/β-Ga2O3 HEMT by Variation in Dielectric Materials

2021 ◽  
Author(s):  
meenakshi Chauhan
Keyword(s):  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Transfer Characteristic ◽  
Dielectric Materials ◽  
High Electron ◽  
A Value ◽  
Analog Performance ◽  
Novel Traits ◽  
Access Resistance ◽  
Contact Barrier

Abstract In the present paper, a high electron mobility transistor based on β-Gα2O3 material (BGO-HEMT) with different dielectrics (Si3N4, Al2O3, and HfO2) at the interface of aluminum nitride (AlN) and the gate is demonstrated. The device has a 10nm AlN layer with 50 nm barrier width, 50nm gate-length, and a value of 5 nm as gate-to-barrier thickness.A highly doped n+ material with a wider gap in between ohmic contact-barrier layers reveals the proposed device's novel traits. The performance is computd in terms of transfer characteristic, transconductance, gate capacitance, 2nd, and 3rd order transconductance values. The proposed structure reduced the dynamic & access resistance and provided a high gm value equal to 0.15S/µm,drain current density value of 650 A/mm (maximum) at Vds= 5 V. In the future, the proposed device can be utilized in high power radio frequency and microwave applications.

Analytical Study of ZnO-based HEMT for Power Switching

2021 ◽  
Author(s):  
Pawan Kumar ◽  
Sumit Chaudhary ◽  
Md Arif Khan ◽  
Sanjay Kumar ◽  
Shaibal Mukherjee
Keyword(s):  
Ion Beam ◽  
Drain Current ◽  
Cost Effective ◽  
High Electron Mobility Transistor ◽  
Switching Frequency ◽  
Physical Parameters ◽  
High Electron ◽  
Ion Beam Sputtering ◽  
Power Switching ◽  
Group Iii

Abstract We investigate the power switching mechanism to evaluate the power loss ( P D ) and efficiency ( η ) in MgZnO/ZnO (MZO)-based power high electron mobility transistor (HEMT), and physical parameters responsible for P D in molecular beam epitaxy (MBE) and dual ion beam sputtering (DIBS) grown MZO HEMT and compare the performance with the group III-nitride HEMTs. This work extensively probes all physical parameters such as two-dimensional electron gas (2DEG) density, mobility, switching frequency, and device dimension to study their impact on power switching in MZO HEMT. Results suggest that the MBE and DIBS grown MZO HEMT with the gate width ( W G ) of ∼ 205 and ∼ 280 mm at drain current coefficient (k) of 11 and 15, respectively, will achieve 99.96 and 99.95% of η and 9.03 and 12.53 W of P D , respectively. Moreover, W G value for DIBS-grown MZO HEMT is observed to further reduce in the range of 112-168 mm by using a Y 2 O 3 spacer layer leading to the maximum η in the range of 99.98-99.97% and the minimum P D in the range of 5-7 W. This work is significant for the development of cost-effective HEMTs for power switching applications.

scholarly journals AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 546 ◽  
Author(s):  
Wojciech Wojtasiak ◽  
Marcin Góralczyk ◽  
Daniel Gryglewski ◽  
Marcin Zając ◽  
Robert Kucharski ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Maximum Output ◽  
High Electron ◽  
Output Current ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Access Resistance

AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3–0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.

Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids

2013 ◽  
Vol 114 (20) ◽  
pp. 204503 ◽  
Author(s):  
J. Y. Fang ◽  
G. Y. Lee ◽  
J. I. Chyi ◽  
C. P. Hsu ◽  
Y. W. Kang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Current Noise ◽  
High Electron ◽  
Polar Liquids ◽  
High Electron Mobility

Enhancement-Mode GaN MOS-HEMT with Quaternary InAlGaN-Barrier

2017 ◽  
Vol 870 ◽  
pp. 389-394
Author(s):  
P.G. Chen ◽  
H.H. Chen ◽  
M. Tang ◽  
Min Hung Lee
Keyword(s):  
Drain Current ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Reciprocal Space Mapping ◽  
Short Channel ◽  
Rocking Curve ◽  
Force Microscopy ◽  
Enhancement Mode ◽  
Atomic Force ◽  
Gan Buffer Layer

The quaternary InAlGaN-barrier GaN MOS-HEMT (high-electron-mobility transistor) with enhancement mode operation was displayed as Vth=0.65V and the maximum drain current ~ 40 mA/mm at VDS=10V with LG=15μm and LGD=20μm. The measured rocking-curve and RSM (reciprocal space mapping) for epitaxial quality was confirmed the composition of the quaternary and analyzed the relaxation between InAlGaN-barrier and GaN Buffer layer. The surface roughness of InAlGaN was observed by AFM (Atomic force microscopy). The positive polarity of Vth was obtained with the gate lengths 3-30μm, and short channel effect was discussed.

scholarly journals InAlAs/InGaAs/InP HEMTs с композитным каналом и улучшенными пробивными характеристиками

2019 ◽  
Vol 45 (21) ◽  
pp. 29
Author(s):  
Н.А Малеев ◽  
А.П. Васильев ◽  
А.Г. Кузьменков ◽  
М.А. Бобров ◽  
М.М. Кулагина ◽  
...  
Keyword(s):  
Current Density ◽  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Device Fabrication ◽  
Fabrication Process ◽  
Channel Structure ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility

High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse breakdown voltages as high as 8–10 V. Devices cut-off frequency exceed 115 GHz. Because of increased breakdown voltage and fully selective double recess fabrication process designed HEMTs are promising for medium power mm-wave MMIC amplifiers.

Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures

2021 ◽  
Vol 13 (2) ◽  
pp. 289-293
Author(s):  
Jung-Hui Tsai ◽  
Jing-Shiuan Niu ◽  
Xin-Yi Huang ◽  
Wen-Chau Liu
Keyword(s):  
Electron Mobility ◽  
Gate Dielectric ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Comparative Investigation ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility ◽  
Radio Frequency Sputtering ◽  
Transistor Mos

In this article, the electrical characteristics of Al0.28Ga0.72 N/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 20-nm-thick Al2O3 layer by using radio-frequency sputtering as the gate dielectric layer are compared to the conventional metal-semiconductor HEMT (MS-HEMT) with Pd/GaN gate structure. For the insertion of the Al2O3 layer, the energy band near the AlN/GaN heterojunction is lifted slightly up and the 2DEG at the heterojunction is reduced to shift the threshold voltage to the right side. Experimental results exhibits that though the maximum drain current decreases about 6.5%, the maximum transconductance increases of 9%, and the gate leakage current significantly reduces about five orders of magnitude for the MOS-HEMT than the MS-HEMT.

Study of Effective Graded Oxide Capacitance and Length Variation on Analog, RF and Power Performances of Dual Gate Underlap MOS-HEMT

2021 ◽  
Author(s):  
Sneha Ghosh ◽  
Anindita Mondal ◽  
Mousiki Kar ◽  
Atanu Kundu
Keyword(s):  
Dielectric Material ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Oxide Semiconductor ◽  
Superior Performance ◽  
Length Variation ◽  
High Electron ◽  
Power Performance ◽  
Output Resistance ◽  
Transistor Mos

Abstract Comparative analysis of a Symmetric Heterojunction Underlap Double Gate (U-DG) GaN/AlGaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) on varying the effective capacitance by using different oxide materials on source and drain sides, and determination of optimum length of oxides for the superior device performance has been presented in this work. This paper shows a detailed performance analysis of the Analog Figure of Merits (FoMs) like variation of Drain Current (IDS), Transconductance (gm), Output Resistance (R0), Intrinsic Gain (gmR0), RF FoMs like cut-off frequency (fT), maximum frequency of oscillation (fMAX), gate to source resistance (RGS), gate to drain resistance (RGD), gate to drain capacitance(CGD), gate to source capacitance (CGS) and total gate capacitance (CGG) using Non-Quasi-Static (NQS) approach. Power analysis includes Output power (Pout), Gain in dBm and power output efficiency (POE) have been studied. Studies reveal that the device with higher dielectric material towards source side shows superior performance. On subsequently changing the proportion of two oxides in a layer by varying length, it is observed that as the proportion of oxide increases the device demonstrates more desirable Analog and RF characteristics while best power performance is obtained from device with equal lengths of HfO2 and SiO2.

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