scholarly journals Design and Performance Investigation of Symmetrical Dual Gate Doping-less TFET for Biomolecule Recognition

Author(s):  
Aishwarya Tomar ◽  
AK Shankhwar

This manuscript presents a dielectric modulated doping-less dual metal Gate Tunnel Field Effect Transistor (DL-DMG-TFET) sensor. In which a nano-cavity is presented above the tunnelling point to recognize the bio-molecule like amino acids (AAs), protein, and so on the proposed P+ and N+ sections are invented relying on the electrode's work-function on silicon body. The impacts of metal work regulation, cavity length and thickness variety are investigated for improving band-to-band tunnelling probability at the source-channel intersection. The proposed structure shows perceptible affectability results for neutral and charged biomolecules. The sensitivity of the higher dielectric constant bio-molecules are higher as compared to bio-molecule having lower dielectric constant; the drain current sensitivity of the Gelatin (k=12) is assessed as which is 13% and 35% higher than the affectability of Keratin (k=10) and Bacteriophage T7 (k=5) separately at the nano-cavity length of 30 nm.

2021 ◽  
Author(s):  
P Vimala ◽  
Likith Krishna L ◽  
Sharma SS ◽  
Rakshanda Ainapur ◽  
Swetha RH

Abstract This paper investigates the simulation and performance of Tunnel field effect transistor (TFET) with a nanocavity in it, which can be used for bio sensing application. The entire simulation is done using the tool Silvaco Atlas TCAD. This paper mainly aims in comparing the different parameters for few biomolecules which has different dielectric constant values, namely Streptavidin, Biotin, APTES, Cellulose and DNA. The device structure here consists of a nanocavity near the source end, which is used to place these biomolecules and hence observe the variation of the Drain current v/s Gate voltage characteristic graph, these biomolecules that are having unique dielectric constants are placed within this cavity and these graphs are observed. The energy band diagram of this device is obtained; on top of this various other parameters namely Surface Potential, Electric field are observed for the above-mentioned Biomolecules. The Length of the cavity of the biosensor is also varied to observe the difference, in addition to this Ion (ON current) variation is plotted for the change in the dielectric constant of the biomolecule.


Author(s):  
Ms. Aishwarya Tomar

This paperwork includes a tunnelling transistor with dual gate and employing the use of dielectric modulation (DG-DM-JL-TFET) based structure. In order to recognize the biomolecule like protein, biotin, uricase etc a nano cavity is presented above the tunnelling. Charge plasma technique is used to form the drain and source regions into the substrate. High work function creates a hole in source and similarly a lower work function will create an electron in drain. The “N” region is etched into the substrate using hafnium electrode with a work function of 3.9 eV. Si02 of 0.5nm thickness is inserted between electrode of source. The “P+” region is etched on intrinsic silicon substrate using Platinum electrode having a work function of 5.93 eV. The device structure proposed in this paper shows results for sensitivity for charged and neutral biological molecules. The sensitivity of the biological molecules having higher dielectric constant is greater than those biological molecules possessing lower dielectric constant.


Silicon ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 2355-2363 ◽  
Author(s):  
Umar Mushtaq ◽  
Naveen Kumar ◽  
Sunny Anand ◽  
Intekhab Amin

Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 63
Author(s):  
Saima Hasan ◽  
Abbas Z. Kouzani ◽  
M A Parvez Mahmud

This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additionally, the closed-form analytical equations for the drain current and drain-to-source voltage dependence on the drain current were investigated. The distribution of drain current with voltages in three regions (triode, unipolar saturation, and ambipolar) was plotted. The modeling results exhibited better output characteristics, transfer function, and transconductance behavior for GFET compared to FETs. The transconductance estimation as a function of gate voltage for different drain-to-source voltages depicted a proportional relationship; however, with the increase of gate voltage this value tended to decline. In the case of transit frequency response, a decrease in channel length resulted in an increase in transit frequency. The threshold voltage dependence on back-gate-source voltage for different dielectrics demonstrated an inverse relationship between the two. The analytical expressions and their implementation through graphical representation for a bilayer graphene channel will be extended to a multilayer channel in the future to improve the device performance.


AIP Advances ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 065108
Author(s):  
I. K. M. Reaz Rahman ◽  
Md. Irfan Khan ◽  
Quazi D. M. Khosru

Nano Energy ◽  
2017 ◽  
Vol 32 ◽  
pp. 73-79 ◽  
Author(s):  
Yash Thakur ◽  
Bing Zhang ◽  
Rui Dong ◽  
Wenchang Lu ◽  
C. Iacob ◽  
...  

2013 ◽  
Vol 24 (49) ◽  
pp. 499601 ◽  
Author(s):  
Limin Huang ◽  
Shuangyi Liu ◽  
Barry J Van Tassell ◽  
Xiaohua Liu ◽  
Andrew Byro ◽  
...  

2017 ◽  
Vol 119 (4) ◽  
pp. 1-32
Author(s):  
Daniel H. Bowen ◽  
Jonathan N. Mills

Background/Context With a growing body of evidence to support the assertion that teacher quality is vital to producing better student outcomes, policymakers continue to seek solutions to attract and retain the best educators. Performance-based pay is a reform that has become popular in K–12 education over the last decade. This strategy potentially produces positive impacts on student achievement in two ways: better alignment of financial incentives with desired outcomes and improved the composition of the teacher workforce. While evaluations have primarily focused on the former result, there is little research on whether the longer-term implementation of these polices can attract more effective teachers. Purpose In this study we aim to provide evidence for potential long-term impacts that performance-based pay can have on the composition of the teacher workforce by addressing two questions: Does performance-based pay attract fundamentally different individuals, as measured by their risk preferences, to the teaching profession? Are stated preferences for a particular pay format correlated to measures of teacher quality? Research Design We apply methods from experimental economics and conduct surveys with 120 teachers from two school districts who have experienced performance pay. We compare the risk preferences of teachers hired under the two pay formats to test the hypothesis that performance-based pay attracts individuals with different characteristics to the profession. We also analyze teachers’ survey responses on their preferences for performance-based pay to determine their relationships to two measures of teacher quality: student test-score gains and principal evaluations. Conclusions/Recommendations We find mixed results regarding the ability of performance-based pay to alter the composition of the teacher workforce. Teachers hired with performance-based pay in place are no different from their colleagues. However, teachers claiming to seek employment in districts with performance-based pay in place appear significantly less risk averse. Surprisingly, additional analyses indicate that teachers’ value-added scores and performance evaluations do not predict a positive disposition towards merit pay. Thus, while these results indicate the possibility for performance-based pay to attract different individuals to teaching, they do not provide evidence that such change would necessarily improve the composition of the workforce. Policymakers should take this potential tradeoff into consideration when considering the expansion of performance pay policies.


2018 ◽  
Vol 201 ◽  
pp. 01002
Author(s):  
Aanand ◽  
Gene Sheu ◽  
Syed Sarwar Imam ◽  
Shao Wei Lu ◽  
Shao-Ming Yang ◽  
...  

In this paper, we report nanowire drain saturation current sensitivity property to measure femtomol level change in drain current due to different proteins i.e. DNA with numerical simulation and fabricated polysilicon nanowire based on the theoretical predictions. In addition, the drain current will also be affected by the back-gate voltage and will increase as the back-gate voltage increases. A 3-dimensional Synopsis tool is used to investigate the drain current behavior for a polysilicon nanowire. The scattering compact model reported result of detailed numerical calculation shows in good agreement, indicating the usefulness of scattering compact model. Whereas 3D synopsis unable to explain the whole region of the drain current characteristics in linear region which uses quantum mechanics model approach.


1978 ◽  
Vol 45 (1) ◽  
pp. 145-154 ◽  
Author(s):  
G. Schneiderman ◽  
T. K. Goldstick

A computer simulation of the steady-state operation of recessed (Whalen-type) polarographic oxygen electrodes has been developed to give the design factors important for performance optimization. The simulation makes use of a specially formulated three-dimensional orthogonal coordinate system with the geometry identical to the actual recessed cathode and gives the oxygen concentration field induced by it in the surrounding medium. Equations are presented which allow one to calculate, for any recessed cathode, the current sensitivity, maximum stirring artifact, measurement error, and time constant. Comparisons with analytically obtained expressions for the corresponding quantities for idealized, spherosymmetric cathodes demonstrate the unique aspects of recessed-cathode performance. For commonly used electrodes, a recess length-to-cathode diameter ratio of greater than 10 is found to give a negligible stirring artifact, a negligible measurement error, and a rapid response.


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