scholarly journals Влияние кислорода и паров воды на структурные превращения в наногранулированных композитах (Co-=SUB=-40-=/SUB=-Fe-=SUB=-40-=/SUB=-B-=SUB=-20-=/SUB=-)-=SUB=-x-=/SUB=-(LiNbO-=SUB=-3-=/SUB=-)-=SUB=-100-x-=/SUB=-

2021 ◽  
Vol 63 (11) ◽  
pp. 1837
Author(s):  
А.В. Ситников ◽  
И.В. Бабкина ◽  
Ю.Е. Калинин ◽  
А.Е. Никонов ◽  
М.Н. Копытин ◽  
...  
Keyword(s):  
Water Vapor ◽  
Vacuum Chamber ◽  
Deposition Process ◽  
Metallic Phase ◽  
Argon Atmosphere ◽  
Recrystallization Temperature ◽  
Heterogeneous Structure ◽  
Pressure Oxygen ◽  
Reactive Gases ◽  
Film Nanocomposites

Influence of oxygen and water vapor in vacuum chamber during the deposition process of (Co40Fe40B20)x(LiNbO3)100-x thin film nanocomposites on electrical properties has been investigated. A significant growth in the electrical resistivity of (Co40Fe40B20)x(LiNbO3)100-x nanocomposites has been established with an increase in reactive gases partial pressure (oxygen and water vapor). It has been found, that the recrystallization temperature of composites deposited in argon atmosphere also increases with metallic phase concentration. While the recrystallization temperature of (Co40Fe40B20)x(LiNbO3)100-x nanocomposites sinthesized in mixed atmosphere of Ar with the reactive gases (oxygen or water vapor) decreases due to increase of the heterogeneous structure oxidation.

scholarly journals Влияние кислорода и паров воды на электрические свойства наногранулированных композитов (Co-=SUB=-40-=/SUB=-Fe-=SUB=-40-=/SUB=-B-=SUB=-20-=/SUB=-)-=SUB=-x-=/SUB=-(LiNbO-=SUB=-3-=/SUB=-)-=SUB=-100-x-=/SUB=-

2021 ◽  
Vol 91 (9) ◽  
pp. 1393
Author(s):  
А.В. Ситников ◽  
И.В. Бабкина ◽  
Ю.Е. Калинин ◽  
А.Е. Никонов ◽  
М.Н. Копытин ◽  
...  
Keyword(s):  
Water Vapor ◽  
Percolation Threshold ◽  
Coulomb Blockade ◽  
Volume Concentration ◽  
Film Growth ◽  
Transverse Electric ◽  
Film Plane ◽  
Significant Shift ◽  
Reactive Gases ◽  
Film Nanocomposites

Influence of oxygen and water vapor in the chamber during the deposition of thin-film nanocomposites (Co40Fe40B20)x(LiNbO3)100-x on the electrical properties of the heterogeneous system has been studied. A significant increase in the resistivity of (Co40Fe40B20)x(LiNbO3)100-x nanocomposites with an increase in the partial pressure of reactive gases (oxygen and water vapor) has been established. A significant shift of the percolation threshold towards higher metal phase concentration in the film plane and perpendicular to the film was found during the synthesis of composites with the addition of reactive gases, which is associated with an increase in the volume concentration of the dielectric phase. It is revealed that the percolation threshold when measured in the geometry perpendicular to the plane of the film corresponds to a significantly lower concentration of atoms of the Co40Fe40B20 alloy than in the case of measurements in the plane of the film, which is associated with the elongated shape of the metallic granules in the direction of film growth and the effects of Coulomb blockade suppression by a high transverse electric field.

scholarly journals Effect of the Content of Water Vapor in the Gas Admitted into a Vacuum Chamber on Pump Time.

Shinku ◽  
1993 ◽  
Vol 36 (3) ◽  
pp. 152-154 ◽  
Author(s):  
Kazue TAKAHASHI ◽  
Manabu EDAMURA
Keyword(s):  
Water Vapor ◽  
Vacuum Chamber

Rutherford backscattering & TEM studies of nitrogen, oxygen & argon incorporation in sputter-deposited titanium nitride films

1987 ◽  
Vol 45 ◽  
pp. 250-251
Author(s):  
J.M. Brown ◽  
F.A. Baiocchi ◽  
D.S. Williams ◽  
R.C. Beairsto ◽  
R.V. Knoell ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Semiconductor Device ◽  
Deposition Process ◽  
Argon Atmosphere ◽  
Device Fabrication ◽  
Rutherford Backscattering ◽  
Substrate Bias ◽  
Target Power ◽  
Sputter Deposited ◽  
And Diffusion

Titanium nitride films are incorporated into semiconductor device fabrication to form both contacts and diffusion barriers. These films are often deposited by means of reactive sputtering of a titanium nitride target in an argon atmosphere. During the course of the deposition process, gaseous components may be incorporated into the films resulting in changes in their physical and electrical properties.The stress and resistivity of titanium nitride films have been measured as a function of several processing variables: i) target power, ii) substrate bias, iii) pressure and iv) N2/Ar ratio. The concentration of oxygen, nitrogen and argon and their distribution throughout the films were measured using Rutherford Backscattering Spectroscopy of 2.12MeV helium ions generated in a General Ionex 1.7MV accelerator.

XPS study of in-situ oxidation of an FeCr alloy by low pressure oxygen in the presence of water vapor

1993 ◽  
Vol 295 (1-2) ◽  
pp. A697
Author(s):  
C. Palacio ◽  
H.J. Mathieu ◽  
V. Stambouli ◽  
D. Landolt
Keyword(s):  
Water Vapor ◽  
Low Pressure ◽  
In Situ Oxidation ◽  
Pressure Oxygen ◽  
Xps Study

Comparison of DLC and N-Doped DLC Synthesized by RF-PECVD

2014 ◽  
Vol 893 ◽  
pp. 528-532 ◽  
Author(s):  
Witit Janchocktawee ◽  
Vishnu Rachpech ◽  
Jessada Wannasin
Keyword(s):  
Chemical Vapor ◽  
Ambient Air ◽  
Scratch Test ◽  
Deposition Process ◽  
Argon Atmosphere ◽  
Glass Slide ◽  
Diamond Like Carbon ◽  
H13 Steel ◽  
Nitrogen Doped ◽  
Thermal Stability Of

Diamond-like carbon (DLC) films and nitrogen doped DLC (NDLC) were deposited on glass slide and H13 steel by plasma-enhanced chemical vapor deposition using a commercial RF 13.56 MHz (RF-PECVD). The films have been prepared from CH4for DLC and CH4+N2mixtures for NDLC. The deposition process was at 300°C under argon atmosphere for 120 min. Bonding energy and diamond like carbon characteristic of DLC and NDLC films have been characterized by Fourier Transform Infrared Spectroscopy (FTIR) and Raman spectroscopy. Thermalgravimetric Analyzer (TGA) was used to evaluate the thermal stability of the films which were scrapped off from a glass slide substrate. The mechanical properties was characterized, such as hardness by nanoindentation technique, scratch test by Rockwell diamond tip in progressive mode and friction coefficient have been measured in ambient air using a ball-on-disk tribometer.

scholarly journals MICROSTRUCTURAL STUDY AND RECRYSTALLIZATION KINETICS OF DEFORMED COMMERCIAL COPPER WIRES

2018 ◽  
Vol 24 (1) ◽  
pp. 32 ◽  
Author(s):  
Lahcene Fellah ◽  
Abdallah Diha ◽  
Zakaria Boumerzoug
Keyword(s):  
Activation Energy ◽  
Room Temperature ◽  
Argon Atmosphere ◽  
Recrystallization Temperature ◽  
Heating Rates ◽  
Recrystallization Kinetics ◽  
Slip Bands ◽  
Commercial Copper ◽  
The One ◽  
Kinetics Of

This work aims to investigate the microstructure after cold-wiredrawing process of commercial copper and its recrystallization kinetics under isochronal annealing. In this paper, the samples studied are commercial copper wires reduced at six different reductions by a wiredrawing at room temperature. Optical microscopy, Scanning Electron Microscopy (SEM), and DSC were used as characterization techniques. The samples were annealed under Argon atmosphere with four different heating rates by using DSC. The Kissinger, Ozawa, Boswell, and Starink methods were used to determine the recrystallization kinetics. The results showed that the cold-wiredrawing had caused the elongation of grains along the main axis of the wires also showed the existence of slip bands. It has been found, on the one side, that the recrystallization temperature increased and shifted to higher temperatures as the heating rate increased, which means that this reaction is thermally actived; On the other sidethe recrystallization temperature clearly shifted to lower temperatures as the deformation increased, which indicated that recrystallization is profoundly enhanced by high deforming.We noted a decrease in the activation energy values when the reduction increases, the activation energy for the most reduced materials were lower than that in the less reduced wires.

scholarly journals Research of Mechanical Properties of Random Disordered CuNi Alloys

2019 ◽  
Vol 8 (12S) ◽  
pp. 276-281
Keyword(s):  
Crystallite Size ◽  
Vacuum Chamber ◽  
Lattice Strain ◽  
Average Crystallite Size ◽  
Xrd Analysis ◽  
Argon Atmosphere ◽  
Oil Refining ◽  
Preparation Technique ◽  
Disordered Alloys ◽  
Peak Broadening

Preparation technique and structural analysis of random CuNi disordered alloys have been discussed. The arcmelting method is used to prepare different compositions of substitutional random disordered Cu1-x Nix (0.1, 0.3, 0.5, 0.7, 0.9) alloys. The stoichiometric amounts of highly purity constituents copper and nickel metals 5 N (99.999%) have been melted under argon atmosphere in vacuum chamber of 10−3 torr. The substitutional random disordered alloys free from carbon and oxygen traces are confirmed from XPS data. A lattice strain is produced in CuNi alloys as the environment of Ni atoms change from sites to sites. Lattice parameters, unit cell volume, structure and inter-planar spacing were calculated from XRD analysis. The average crystallite size of different compositions of random disordered CuNi alloys is calibrated by using Scherer’s method and Williamson-Hall (W-H) method. The roles of crystallite size and lattice strain on the XRD peak broadening of the random disordered CuNi alloys were analyzed. The strain increases with increase in concentration of Ni and exhibits a maximum of 0.00247 at 50% Ni concentration. The CuNi alloys find very wide applications in oil refining and long corrosion free life.

scholarly journals The Study of Selected Properties of Ti EB PVD Coating Deposited Onto Inner Tube Surface at Low Temperature

2016 ◽  
Vol 61 (1) ◽  
pp. 67-74 ◽  
Author(s):  
D. Kottfer ◽  
M. Ferdinandy ◽  
L. Kaczmarek ◽  
P. Trebuňa ◽  
P. Hvizdoš
Keyword(s):  
Grain Growth ◽  
Vacuum Chamber ◽  
Incidence Angle ◽  
Deposition Process ◽  
Growth Direction ◽  
Steel Tubes ◽  
Pvd Coating ◽  
Coated Surface ◽  
Conventional Type ◽  
Standard Techniques

This study investigates the selected properties of the thin Ti coating applied by activated evaporation EB PVD technique. This technique was used for the deposition of Ti thin coating onto inner surface of OKhN3 MFA steel tubes. Deposition process was carried out at temperature 200°C. Conventional type of coatings - monolayer Ti - was analyzed by standard techniques for surface status and quality assessment - coating thickness, chemical composition by EDX analysis, adhesion, hardness, roughness, and growth direction of columns at room temperature. Ti monolayer achieved roughness Ra equal from 0.42 μm to 0.47 μm. The resulting hardness was from 2 GPa to 8.5 GPa depending on the sample location inside the vacuum chamber. Placing of the coated surface also affected the direction of grain growth of Ti coating columns. The angles α of grain growth were found to be from 40° to 60°. Angle α increased two to three times more than the incidence angle β (from 12° to 28°) of evaporated Ti particles. Values of the adhesion measured along the Ti growth direction were mostly higher (up to 10%) or the same as those measured perpendicular to it.

scholarly journals Fabrication of Si3N4Nanocrystals and Nanowires Using PECVD

2010 ◽  
Vol 2010 ◽  
pp. 1-4 ◽  
Author(s):  
Jingwei Song ◽  
Xiying Ma ◽  
Wang Zui ◽  
Chen Wei ◽  
Zhongpin Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Si Substrates ◽  
Fe Catalyst ◽  
Reactive Gases ◽  
Fe Ions ◽  
S Deposition

Si3N4nanowires and nanocrystals were prepared on Si substrates with or without Fe catalyst using silane (SiH4) and nitrogen (N2) as reactive gases through plasma-enhanced chemical vapor deposition (PECVD) technology. With Fe catalyst,Si3N4nanowires were developed, indicating that Fe catalyst played a role forSi3N4molecules directionally depositing into strings. The density of the nanowires is closely related to the density of Fe catalyst. When the density of Fe ions on the substrate was decreased remarkably, a smooth superlongSi3N4nanowire with 12 μm in length was fabricated. Having analyzed the growth mechanism, a growth model forSi3N4nanowires was developed. The growth ofSi3N4nanocrystallines was attributed to be a vapor-solid (V-S) deposition process.

The Influence of Activator on Vapour Phase Aluminizing of TiAl Intermetallics

2015 ◽  
Vol 227 ◽  
pp. 357-360 ◽  
Author(s):  
Marek Góral ◽  
Andrzej Gradzik ◽  
Jan Sieniawski ◽  
Ryszard Filip ◽  
Jan Sieniawski ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Deposition Process ◽  
Vapour Phase ◽  
Intermetallic Alloy ◽  
Argon Atmosphere ◽  
Aluminide Coatings ◽  
Process Use ◽  
Tial Intermetallics

The paper presents results of research into the aluminizing process of TiAl intermetallics. The substrate was Ti48Al2Cr2Nb intermetallic alloy. The BPX Pro 325S CVD system was used for aluminizing process. Used in the experimental were four types of activators: AlCl3, AlF3, ZrCl4and HfCl4. During the aluminizing process 2 kg of Al-Cr granules were put in a container. The deposition process was carried out in argon atmosphere for a duration of 4 hours at the temperature of 1000°C. The XRD and chemical analysis were conducted. The results showed than aluminide coatings contained TiAl2and TiAl2phases were formed using an AlF3activator. In other processes the amount of Al in the coatings was smaller than in the substrate. The obtained results showed that for the aluminizing process use of aluminum fluorides is necessary.

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