scholarly journals Влияние электрического поля на водородоподобные состояния в кристаллах моноклинного дифосфида цинка

2022 ◽  
Vol 64 (1) ◽  
pp. 74
Author(s):  
И.Г. Стамов ◽  
Д.В. Ткаченко
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Stark Shift ◽  
Absorption Lines

The effect of the electric field on hydrogen-like states in β-ZnP2 is investigated. It was found that the exciton states Cn=1 in the electric field of the Schottky barrier undergo an anomalous Stark shift, and the states that form a reverse hydrogen-like series of absorption lines (IOS) are practically insensitive to the electric field. The laws governing the behavior of the exciton Xn=2 state "flammable" in an electric field in β-ZnP2 have been determined.

Paramagnetic resonance in the nickel Tutton salts

1952 ◽  
Vol 213 (1115) ◽  
pp. 459-473 ◽  
Keyword(s):  
Electric Field ◽  
Magnetic Anisotropy ◽  
Ground State ◽  
Absorption Lines ◽  
Crystalline Electric Field ◽  
Paramagnetic Resonance ◽  
Triplet Ground State ◽  
Tutton Salts ◽  
Splitting Factor ◽  
Rhombic Symmetry

The paramagnetic resonance spectra of five nickel Tutton salts have been analyzed at 290° K. The positions and intensities of the absorption lines are adequately explained by a crystalline electric field of rhombic symmetry. The triplet ground state is resolved into three singlets with an overall splitting of the order of 3 cm -1 , and the spectroscopic splitting factor g is found to be 2.25 ± 0.05. A comparison is made between the directly measured values of the magnetic anisotropy, and the values calculated using the resonance results.

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

2013 ◽  
Vol 740-742 ◽  
pp. 881-886 ◽  
Author(s):  
Hiroyuki Okino ◽  
Norifumi Kameshiro ◽  
Kumiko Konishi ◽  
Naomi Inada ◽  
Kazuhiro Mochizuki ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Current ◽  
Tunneling Current ◽  
Leakage Currents ◽  
Reverse Leakage Current ◽  
Low Leakage ◽  
Chip Size ◽  
Barrier Metal

The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field

2019 ◽  
Vol 30 (40) ◽  
pp. 405207 ◽  
Author(s):  
Hengheng Li ◽  
Zhongpo Zhou ◽  
Kelei Zhang ◽  
Haiying Wang
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Interlayer Distance

scholarly journals SiC trench MOSFET with integrated side-wall Schottky barrier diode having P+ electric field shield

2019 ◽  
Vol 16 (5) ◽  
pp. 20181135-20181135
Author(s):  
Bo Yi ◽  
Hao Hu ◽  
Jia Lin ◽  
Junji Cheng ◽  
Haimeng Huang ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Side Wall ◽  
Schottky Barrier Diode

Effects of strain and electric field on electronic structures and Schottky barrier in graphene and SnS hybrid heterostructures

Carbon ◽  
2016 ◽  
Vol 109 ◽  
pp. 737-746 ◽  
Author(s):  
Wenqi Xiong ◽  
Congxin Xia ◽  
Xu Zhao ◽  
Tianxing Wang ◽  
Yu Jia
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Electronic Structures

Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

2015 ◽  
Vol 821-823 ◽  
pp. 575-578 ◽  
Author(s):  
Takahiro Makino ◽  
Manato Deki ◽  
Shinobu Onoda ◽  
Norihiro Hoshino ◽  
Hidekazu Tsuchida ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Layer Thickness ◽  
Epitaxial Layer ◽  
Impact Ionization ◽  
Heavy Ion ◽  
Charge Collection ◽  
Static Electric Field ◽  
The Impact ◽  
Lower Electric Field

The charge induced in SiC-SBDs with different epi-layer thicknesses by ion incidence was measured to understand the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. SiC SBD of which epitaxial-layer thicknesses is close to ion range show larger anomalous charge collection than SBD with thicker epi-layer although the former one has lower electric field than the later one. The gains of collected charge from the SBDs suggest that the impact ionization under 0.16 - 0.18 MV/cm of the static electric field in depletion layer is not dominant mechanisms for the anomalous charge collection. It is suggested that the epitaxial-layer thickness and ion-induced transient high electric field are key to understand the anomalous charge collection mechanisms in SBDs.

Sign in / Sign up

Export Citation Format

Share Document