Influence of electric field on the photoelectric effect in a Schottky barrier based on n-type cadmium diphosphide

2008 ◽  
Vol 42 (9) ◽  
pp. 1062-1068 ◽  
Author(s):  
I. G. Stamov ◽  
D. V. Tkachenko
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Photoelectric Effect ◽  
Cadmium Diphosphide

GENERATION OF ULTRASHORT ELECTRON BUNCHES IN NANOSTRUCTURES BY FEMTOSECOND LASER PULSES

2007 ◽  
Vol 17 (03) ◽  
pp. 571-576
Author(s):  
A. GLADUN ◽  
V. LEIMAN ◽  
A. ARSENIN ◽  
O. MANNOUN ◽  
V. TARAKANOV
Keyword(s):  
Thin Film ◽  
Laser Radiation ◽  
Femtosecond Laser ◽  
Electric Field ◽  
Surface Plasmon ◽  
Laser Pulses ◽  
Photoelectric Effect ◽  
Femtosecond Laser Pulses ◽  
Electron Bunches ◽  
Internal Photoelectric Effect

We present numerical investigation of anomalous internal photoelectric effect which is realized in thin film (< 100 nm) structures by surface plasmon (SP) excitation and its interaction with primary laser radiation. SP electric field gain and electron temperature in the SP field have been calculated.

scholarly journals The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

2013 ◽  
Vol 2013 ◽  
pp. 1-5
Author(s):  
Haoyang Cui ◽  
Yongpeng Xu ◽  
Junjie Yang ◽  
Naiyun Tang ◽  
Zhong Tang
Keyword(s):  
Schottky Barrier ◽  
Response Curve ◽  
Photoelectric Effect ◽  
Ultrafast Laser ◽  
Characteristic Parameters ◽  
Pv Array ◽  
Array Electrode ◽  
Photo Response ◽  
Positive Peak ◽  
Semiconductor Contact

The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model ofpnjunction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced fromp-njunction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by thepnjunction.

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

2013 ◽  
Vol 740-742 ◽  
pp. 881-886 ◽  
Author(s):  
Hiroyuki Okino ◽  
Norifumi Kameshiro ◽  
Kumiko Konishi ◽  
Naomi Inada ◽  
Kazuhiro Mochizuki ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Current ◽  
Tunneling Current ◽  
Leakage Currents ◽  
Reverse Leakage Current ◽  
Low Leakage ◽  
Chip Size ◽  
Barrier Metal

The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field

2019 ◽  
Vol 30 (40) ◽  
pp. 405207 ◽  
Author(s):  
Hengheng Li ◽  
Zhongpo Zhou ◽  
Kelei Zhang ◽  
Haiying Wang
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Interlayer Distance

scholarly journals SiC trench MOSFET with integrated side-wall Schottky barrier diode having P+ electric field shield

2019 ◽  
Vol 16 (5) ◽  
pp. 20181135-20181135
Author(s):  
Bo Yi ◽  
Hao Hu ◽  
Jia Lin ◽  
Junji Cheng ◽  
Haimeng Huang ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Side Wall ◽  
Schottky Barrier Diode

Effects of strain and electric field on electronic structures and Schottky barrier in graphene and SnS hybrid heterostructures

Carbon ◽  
2016 ◽  
Vol 109 ◽  
pp. 737-746 ◽  
Author(s):  
Wenqi Xiong ◽  
Congxin Xia ◽  
Xu Zhao ◽  
Tianxing Wang ◽  
Yu Jia
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Electronic Structures

Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

2015 ◽  
Vol 821-823 ◽  
pp. 575-578 ◽  
Author(s):  
Takahiro Makino ◽  
Manato Deki ◽  
Shinobu Onoda ◽  
Norihiro Hoshino ◽  
Hidekazu Tsuchida ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Layer Thickness ◽  
Epitaxial Layer ◽  
Impact Ionization ◽  
Heavy Ion ◽  
Charge Collection ◽  
Static Electric Field ◽  
The Impact ◽  
Lower Electric Field

The charge induced in SiC-SBDs with different epi-layer thicknesses by ion incidence was measured to understand the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. SiC SBD of which epitaxial-layer thicknesses is close to ion range show larger anomalous charge collection than SBD with thicker epi-layer although the former one has lower electric field than the later one. The gains of collected charge from the SBDs suggest that the impact ionization under 0.16 - 0.18 MV/cm of the static electric field in depletion layer is not dominant mechanisms for the anomalous charge collection. It is suggested that the epitaxial-layer thickness and ion-induced transient high electric field are key to understand the anomalous charge collection mechanisms in SBDs.

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