Effects of strain and electric field on electronic structures and Schottky barrier in graphene and SnS hybrid heterostructures

Under the tuning of an external electric field, the variation of the geometric structures and the band gaps of the wurtzite semiconductors ZnS, ZnO, BeO, AlN, SiC and GaN have been investigated by the first-principles method based on density functional theory. The stability, density of states, band structures and the charge distribution have been analyzed under the electric field along (001) and (00[Formula: see text]) directions. Furthermore, the corresponding results have been compared without the electric field. According to our calculation, we find that the magnitude and the direction of the electric field have a great influence on the electronic structures of the wurtzite materials we mentioned above, which induce a phase transition from semiconductor to metal under a certain electric field. Therefore, we can regulate their physical properties of this type of semiconductor materials by tuning the magnitude and the direction of the electric field.

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Calculated Electronic Structures and Schottky Barrier Heights of (111) NiSi2/Si A- and B-Type Interfaces

NATO ASI Series - Metallization and Metal-Semiconductor Interfaces ◽

10.1007/978-1-4613-0795-2_13 ◽

1989 ◽

pp. 215-234 ◽

Cited By ~ 3

Author(s):

G. P. Das ◽

P. Blöchl ◽

N. E. Christensen ◽

O. K. Andersen

Keyword(s):

Schottky Barrier ◽

Electronic Structures ◽

Barrier Heights

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Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.881 ◽

2013 ◽

Vol 740-742 ◽

pp. 881-886 ◽

Cited By ~ 8

Author(s):

Hiroyuki Okino ◽

Norifumi Kameshiro ◽

Kumiko Konishi ◽

Naomi Inada ◽

Kazuhiro Mochizuki ◽

...

Keyword(s):

Electric Field ◽

Schottky Barrier ◽

Leakage Current ◽

Reverse Current ◽

Tunneling Current ◽

Leakage Currents ◽

Reverse Leakage Current ◽

Low Leakage ◽

Chip Size ◽

Barrier Metal

The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

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Electric field modulation of electronic structures in InSe and black phosphorus heterostructure

Solid State Communications ◽

10.1016/j.ssc.2017.10.020 ◽

2018 ◽

Vol 269 ◽

pp. 112-117 ◽

Cited By ~ 12

Author(s):

Yi-min Ding ◽

Jun-jie Shi ◽

Min Zhang ◽

Congxin Xia ◽

Meng Wu ◽

...

Keyword(s):

Electric Field ◽

Electronic Structures ◽

Black Phosphorus ◽

Field Modulation

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Tunable band gap of graphyne-based homo- and hetero-structures by stacking sequences, strain and electric field

Physical Chemistry Chemical Physics ◽

10.1039/c8cp03533d ◽

2018 ◽

Vol 20 (42) ◽

pp. 26934-26946 ◽

Cited By ~ 9

Author(s):

Jiangni Yun ◽

Yanni Zhang ◽

Yanbing Ren ◽

Manzhang Xu ◽

Junfeng Yan ◽

...

Keyword(s):

Electric Field ◽

Band Gap ◽

Electronic Structures ◽

Vertical Electric Field ◽

Tunable Band Gap ◽

External Strain

Stacking sequences, external strain and a vertical electric field can be used to effectively modulate the electronic structures of graphyne-based homo- and hetero-structures.

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Tunable electronic properties of GaS-SnS2 heterostructure by strain and electric field

Chinese Physics B ◽

10.1088/1674-1056/ac3a62 ◽

2021 ◽

Author(s):

Dahua Ren ◽

Qiang Li ◽

Kai Qian ◽

Xingyi Tan

Keyword(s):

Optical Properties ◽

Electric Field ◽

Visible Light ◽

Electronic Properties ◽

Electronic Structures ◽

Density Functional ◽

Band Alignment ◽

Promising Candidate ◽

Functional Theory ◽

External Strain

Abstract Vertically stacked heterostructures have received extensive attention because of their tunable electronic structures and outstanding optical properties. In this work, we have studied the structural, electronic and optical properties of vertically stacked GaS-SnS2 heterostructure under the frame of density functional theory. We find that the stacked GaS-SnS2 heterostructure is a semiconductor with suitable indirect band gaps of 1.82 eV, exhibiting a type-II band alignment for easily separating the photo-generated carriers. The electronic properties of GaS-SnS2 heterostructure can be effectively tuned by external strain and electric field. The optical absorption of GaS-SnS2 heterostructure is more enhanced by comparison with the GaS monolayer and SnS2 monolayer in the visible light. Our results suggest that GaS-SnS2 heterostructure is a promising candidate for the photocatalyst and photoelectronic devices in visible light.

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