scholarly journals Микроскопия поверхности кремния, имплантированного ионами серебра высокими дозами

2019 ◽  
Vol 89 (2) ◽  
pp. 226
Author(s):  
В.В. Воробьев ◽  
А.М. Рогов ◽  
Ю.Н. Осин ◽  
В.И. Нуждин ◽  
В.Ф. Валеев ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Threshold Value ◽  
Beam Current ◽  
High Energy ◽  
Implantation Dose ◽  
Beam Current Density ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractLow-energy ( E = 30 keV) Ag^+ ions have been implanted into single-crystalline Si wafers (c-Si) with an implantation dose varying from 1.25 × 10^15 to 1.5 × 10^17 ions cm^–2 and an ion beam current density varying from 2 to 15 μA/cm^2. The surface morphology of implanted wafers has been examined using scanning electron microscopy, transmission electron microscopy, and atomic force microscopy, and their structure has been studied by means of reflection high-energy electron diffraction and elemental microanalysis. It has been shown that for minimal irradiation doses used in experiments, the surface layer of c-Si experiences amorphization. It has been found that when the implantation dose is in excess of the threshold value (~3.1 × 10^15 ions cm^–2), Ag nanoparticles uniformly distributed over the Si surface arise in the irradiated Si layer. At a dose exceeding 10^17 ions cm^–2, a porous Si structure is observed. In this case, the Ag nanoparticle size distribution becomes bimodal with coarse particles localized at the walls of Si pores.

Study of Swift Heavy Ion Irradiation Induced Nanophases of TiO2

2013 ◽  
Vol 24 ◽  
pp. 133-139 ◽  
Author(s):  
Madhavi Thakurdesai ◽  
A. Mahadkar ◽  
Varsha Bhattacharyya
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Heavy Ion ◽  
High Energy ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Non Equilibrium

Ion beam irradiation is a unique non-equilibrium technique for phase formation and material modification. Localized rise in temperature and ultra fast (~1012 s) dissipations of impinging energy make it an attractive tool for nanostructure synthesize. Dense electronic excitation induced spatial and temporal confinement of high energy in a narrow dimension leads the system to a highly non-equilibrium state and the system then relaxes dynamically inducing nucleation of nanocrystals along the latent track. In the present investigation, amorphous thin films of TiO2 are irradiated by 100 MeV Ag ion beam. These irradiated thin films are characterized by Atomic Force Microscopy (AFM), Glancing Angle X-ray Diffraction (GAXRD), Transmission Electron Microscopy (TEM) and UV-VIS absorption spectroscopy. AFM and TEM studies indicate formation of circular nanoparticles of size 10±2 nm in a film irradiated at a fluence of 1×1012 ions.cm-2. Nanophase formation is also inferred from the blueshift observed in UV-VIS absorption band edge.

Investigation of ZnFe2O4 Nanoparticles Prepared by High Energy Milling

2009 ◽  
Author(s):  
S. S. Srinivasan ◽  
N. Kislov ◽  
Yu. Emirov ◽  
D. Y. Goswami ◽  
E. K. Stefanakos
Keyword(s):  
Electron Microscopy ◽  
Particle Size ◽  
Energy Gap ◽  
Blue Shift ◽  
High Energy ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Coefficient Estimation ◽  
Transmission Electron

Nanoparticles of Zinc Ferrite (ZnFe2O4) prepared by both wet- and dry- high-energy ball milling (HEBM), have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), surface area and pore size distribution (BET) and wavelength-dependent diffuse reflectance and scattering turned into absorption coefficient estimation using the Kubelka-Munk theory. It was found that after 72 hours of HEBM, the particle size was decreased from 220 nm for the initial material to 16.5 nm and 9.4 nm for the wet- and dry-milled samples, respectively. The optical absorption analysis revealed that the energy gap is increased (blue shift) by 0.45 eV for wet-milled and decreased (“anomalous” red shift) by 0.15 eV for dry-milled samples of ZnFe2O4 as the particle size decreased.

scholarly journals Создание пористых слоев германия имплантацией ионами серебра

2018 ◽  
Vol 44 (8) ◽  
pp. 84
Author(s):  
А.Л. Степанов ◽  
В.В. Воробьев ◽  
В.И. Нуждин ◽  
В.Ф. Валеев ◽  
Ю.Н. Осин
Keyword(s):  
Ion Beam ◽  
Silver Ions ◽  
Average Diameter ◽  
Beam Current ◽  
High Energy ◽  
Beam Current Density ◽  
High Dose ◽  
X Ray ◽  
Force Microscopy ◽  
20 Nm

AbstractWe propose a method for the formation of porous germanium ( P -Ge) layers containing silver nanoparticles by means of high-dose implantation of low-energy Ag^+ ions into single-crystalline germanium ( c -Ge). This is demonstrated by implantation of 30-keV Ag^+ ions into a polished c -Ge plate to a dose of 1.5 × 10^17 ion/cm^2 at an ion beam-current density of 5 μA/cm^2. Examination by high-resolution scanning electron microscopy (SEM), atomic-force microscopy (AFM), X-ray diffraction (XRD), energy-dispersive X-ray (EDX) microanalysis, and reflection high-energy electron diffraction (RHEED) showed that the implantation of silver ions into c -Ge surface led to the formation of a P -Ge layer with spongy structure comprising a network of interwoven nanofibers with an average diameter of ∼10–20 nm Ag nanoparticles on the ends of fibers. It is also established that the formation of pores during Ag^+ ion implantation is accompanied by effective sputtering of the Ge surface.

Novel Electromigration Failure Mechanism for Aluminium-Based Metallization on Titanium Substrate

1998 ◽  
Vol 516 ◽  
Author(s):  
G. Girardi ◽  
C. Caprile ◽  
F. Cazzaniga ◽  
L. Riva
Keyword(s):  
Electron Microscopy ◽  
Grain Growth ◽  
Ion Beam ◽  
Titanium Substrate ◽  
Vertical Direction ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Focus Ion Beam

AbstractIn this paper a phenomenological characterisation of an anomalous grain growth, observed after classical electromigration lifetests, on Al-l%Si-0.5%Cu multigrain stripes, deposited at high temperature (460°C) on a Ti substrate, is reported. Failure analysis, carried out by Scanning Electron Microscopy (SEM) and Focus Ion Beam (FIB), has detected an abnormal single-grain growth in the vertical direction, starting from the Ti/Al interface. Medium Time to Failure (MTF) data are compared with those of stripes on Ti/TiN substrate, on which no grain growth was observed. The growth of the anomalous grains has been related to the Ti/Al interface properties. Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM) analyses concurrently show a higher texture of the film on the Ti, compared with the film on the Ti/TiN substrate. The tight columnar orientation of grain boundaries strongly limits the mechanism of grain boundary diffusion during electromigration stress. The atomic flux is then forced to take place at the Ti/Al interface, where the epitaxial growth of the Al single grains is favoured.

Compliance at the GaSb/GaP Interface by Misfit Dislocations Array

2011 ◽  
Vol 324 ◽  
pp. 85-88
Author(s):  
Salim El Kazzi ◽  
Ludovic Desplanque ◽  
Christophe Coinon ◽  
Yi Wang ◽  
Pierrre Ruterana ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Energy ◽  
Misfit Dislocations ◽  
Initial Growth ◽  
Electron Diffraction Analysis ◽  
High Energy Electron ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

We study the initial growth of 10 monolayers (MLs) of GaSb on a (001) GaP substrate. Transmission electron microscopy and reflection high energy electron diffraction analysis show that an Sb-rich GaP surface promotes the formation of a 90° misfit dislocation array at the epi-substrate interface. Using atomic force microscopy, we investigate the influence of the growth temperature and the growth rate on the formation and the shape of GaSb islands.

Microstructure of SrTiO3 buffer layers and itseffects on superconducting properties ofYBa2Cu3O7-δ coated conductors

2004 ◽  
Vol 19 (6) ◽  
pp. 1869-1875 ◽  
Author(s):  
H. Wang ◽  
S.R. Foltyn ◽  
P.N. Arendt ◽  
Q.X. Jia ◽  
J.L. MacManus-Driscoll ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Growth Conditions ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Superconducting Properties ◽  
Ybco Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

A thin layer of SrTiO3 (STO) has successfully been used as a buffer layer to grow high-quality superconducting YBa2Cu3O7-δ(YBCO) thick films on polycrystalline metal substrates with a biaxially oriented MgO template produced by ion-beam-assisted deposition. Using this architecture, 1.5-μm-thick YBCO films with an in-plane mosaic spread in the range of 2.5° to 3.5° in full width at half-maximum and critical current density over 2 × 10 6A/cm2 in self-field at 75 K have routinely been achieved. It is interesting to note that the pulsed laser deposition growth conditions of SrTiO3 buffer layers, such as growth temperature and oxygen pressure, have strong effects on the superconducting properties of YBCO. Detailed studies using transmission electron microscopy, scanning electron microscopy, and atomic force microscopy were used to explore the microstructures of STO deposited at different conditions and to understand further their effects on the growth and properties of YBCO films.

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