Novel Electromigration Failure Mechanism for Aluminium-Based Metallization on Titanium Substrate

1998 ◽  
Vol 516 ◽  
Author(s):  
G. Girardi ◽  
C. Caprile ◽  
F. Cazzaniga ◽  
L. Riva
Keyword(s):  
Electron Microscopy ◽  
Grain Growth ◽  
Ion Beam ◽  
Titanium Substrate ◽  
Vertical Direction ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Focus Ion Beam

AbstractIn this paper a phenomenological characterisation of an anomalous grain growth, observed after classical electromigration lifetests, on Al-l%Si-0.5%Cu multigrain stripes, deposited at high temperature (460°C) on a Ti substrate, is reported. Failure analysis, carried out by Scanning Electron Microscopy (SEM) and Focus Ion Beam (FIB), has detected an abnormal single-grain growth in the vertical direction, starting from the Ti/Al interface. Medium Time to Failure (MTF) data are compared with those of stripes on Ti/TiN substrate, on which no grain growth was observed. The growth of the anomalous grains has been related to the Ti/Al interface properties. Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM) analyses concurrently show a higher texture of the film on the Ti, compared with the film on the Ti/TiN substrate. The tight columnar orientation of grain boundaries strongly limits the mechanism of grain boundary diffusion during electromigration stress. The atomic flux is then forced to take place at the Ti/Al interface, where the epitaxial growth of the Al single grains is favoured.

Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

1995 ◽  
Vol 403 ◽  
Author(s):  
G. Bai ◽  
S. Wittenbrock ◽  
V. Ochoa ◽  
R. Villasol ◽  
C. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Interconnects ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractCu has two advantages over Al for sub-quarter micron interconnect application: (1) higher conductivity and (2) improved electromigration reliability. However, Cu diffuses quickly in SiO2and Si, and must be encapsulated. Polycrystalline films of Physical Vapor Deposition (PVD) Ta, W, Mo, TiN, and Metal-Organo Chemical Vapor Deposition (MOCVD) TiN and Ti-Si-N have been evaluated as Cu diffusion barriers using electrically biased-thermal-stressing tests. Barrier effectiveness of these thin films were correlated with their physical properties from Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Secondary Electron Microscopy (SEM), and Auger Electron Spectroscopy (AES) analysis. The barrier failure is dominated by “micro-defects” in the barrier film that serve as easy pathways for Cu diffusion. An ideal barrier system should be free of such micro-defects (e.g., amorphous Ti-Si-N and annealed Ta). The median-time-to-failure (MTTF) of a Ta barrier (30 nm) has been measured at different bias electrical fields and stressing temperatures, and the extrapolated MTTF of such a barrier is > 100 year at an operating condition of 200C and 0.1 MV/cm.

scholarly journals Микроскопия поверхности кремния, имплантированного ионами серебра высокими дозами

2019 ◽  
Vol 89 (2) ◽  
pp. 226
Author(s):  
В.В. Воробьев ◽  
А.М. Рогов ◽  
Ю.Н. Осин ◽  
В.И. Нуждин ◽  
В.Ф. Валеев ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Threshold Value ◽  
Beam Current ◽  
High Energy ◽  
Implantation Dose ◽  
Beam Current Density ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractLow-energy ( E = 30 keV) Ag^+ ions have been implanted into single-crystalline Si wafers (c-Si) with an implantation dose varying from 1.25 × 10^15 to 1.5 × 10^17 ions cm^–2 and an ion beam current density varying from 2 to 15 μA/cm^2. The surface morphology of implanted wafers has been examined using scanning electron microscopy, transmission electron microscopy, and atomic force microscopy, and their structure has been studied by means of reflection high-energy electron diffraction and elemental microanalysis. It has been shown that for minimal irradiation doses used in experiments, the surface layer of c-Si experiences amorphization. It has been found that when the implantation dose is in excess of the threshold value (~3.1 × 10^15 ions cm^–2), Ag nanoparticles uniformly distributed over the Si surface arise in the irradiated Si layer. At a dose exceeding 10^17 ions cm^–2, a porous Si structure is observed. In this case, the Ag nanoparticle size distribution becomes bimodal with coarse particles localized at the walls of Si pores.

Microstructure of SrTiO3 buffer layers and itseffects on superconducting properties ofYBa2Cu3O7-δ coated conductors

2004 ◽  
Vol 19 (6) ◽  
pp. 1869-1875 ◽  
Author(s):  
H. Wang ◽  
S.R. Foltyn ◽  
P.N. Arendt ◽  
Q.X. Jia ◽  
J.L. MacManus-Driscoll ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Growth Conditions ◽  
Coated Conductors ◽  
Buffer Layers ◽  
Superconducting Properties ◽  
Ybco Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

A thin layer of SrTiO3 (STO) has successfully been used as a buffer layer to grow high-quality superconducting YBa2Cu3O7-δ(YBCO) thick films on polycrystalline metal substrates with a biaxially oriented MgO template produced by ion-beam-assisted deposition. Using this architecture, 1.5-μm-thick YBCO films with an in-plane mosaic spread in the range of 2.5° to 3.5° in full width at half-maximum and critical current density over 2 × 10 6A/cm2 in self-field at 75 K have routinely been achieved. It is interesting to note that the pulsed laser deposition growth conditions of SrTiO3 buffer layers, such as growth temperature and oxygen pressure, have strong effects on the superconducting properties of YBCO. Detailed studies using transmission electron microscopy, scanning electron microscopy, and atomic force microscopy were used to explore the microstructures of STO deposited at different conditions and to understand further their effects on the growth and properties of YBCO films.

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

Development of Ge Nanoparticles Embedded in GeO2 Matrix

2008 ◽  
Vol 8 (8) ◽  
pp. 4081-4085 ◽  
Author(s):  
Y. Batra ◽  
D. Kabiraj ◽  
D. Kanjilal
Keyword(s):  
Electron Microscopy ◽  
Annealing Temperature ◽  
Spectroscopic Studies ◽  
Electron Beam Evaporation ◽  
Granular Structure ◽  
Raman Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Ge Nanocrystals

Germanium (Ge) nanoparticles have attracted a lot of attention due to their excellent optical properties. In this paper, we report on the formation of Ge nanoparticles embedded in GeO2 matrix prepared by electron beam evaporation and subsequent annealing. Transmission electron microscopy (TEM) studies clearly indicate the formation of Ge nanocrystals in the films annealed at 500 °C. Fourier transform infrared (FTIR) spectroscopic studies are carried out to verify the evolution of the structure after annealingat each stage. Micro-Raman analysis also confirms the formation of Ge nanoparticles in the annealed films. Development of Ge nanoparticles is also established by photoluminescence (PL) analysis. Surface morphology study is carried out by atomic force microscopy (AFM). It shows the evolution of granular structure of the films with increasing annealing temperature.

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